公开(公告)号：US11466234B2

公开(公告)日：2022-10-11

申请号：US17011371

申请日：2020-09-03

Applicant: FUJIMI INCORPORATED

Inventor： Tsutomu Yoshino ,  Shogo Onishi ,  Yasuto Ishida

IPC: C11D3/37 ,  C11D1/00 ,  C11D11/00 ,  H01L21/321 ,  B08B3/08 ,  H01L21/02 ,  H01L21/3105 ,  B08B1/00

Abstract: To provide a means capable of sufficiently removing organic residues present on the surface of a polishing object after polishing containing silicon oxide or polysilicon.
A surface treatment composition contains a polymer having a constituent unit represented by Formula (1) below and water and is used for treating the surface of a polishing object after polishing, in which, in Formula (1) above, R1 is a hydrocarbon group having 1 to 5 carbon atoms and R2 is a hydrogen atom or a hydrocarbon group having 1 to 3 carbon atoms.

公开(公告)号：US11028340B2

公开(公告)日：2021-06-08

申请号：US16491349

申请日：2018-02-19

Applicant: FUJIMI INCORPORATED

Inventor： Yasuto Ishida ,  Tsutomu Yoshino ,  Shogo Onishi ,  Yukinobu Yoshizaki

IPC: C11D3/37 ,  C11D1/00 ,  C09G1/04 ,  C11D11/00 ,  C11D17/00 ,  H01L21/02 ,  H01L21/306

Abstract: An objective of the present invention is to provide a means for sufficiently removing residues remaining on a surface of a polished object to be polished.
A composition for surface treatment containing a polymer compound having at least one ionic functional group selected from the group consisting of a sulfonic acid (salt) group, a phosphoric acid (salt) group, a phosphoric acid (salt) group, and an amino group, and water, in which pH is less than 7, and the polymer compound has a pKa of 3 or less and an ionic functional group density of more than 10%.

公开(公告)号：US11692137B2

公开(公告)日：2023-07-04

申请号：US17486008

申请日：2021-09-27

Applicant: FUJIMI INCORPORATED

Inventor： Tsutomu Yoshino ,  Ayano Yamazaki ,  Satoru Yarita ,  Shogo Onishi ,  Yasuto Ishida

IPC: C09K13/06 ,  H01L21/321 ,  C09G1/02 ,  C09G1/04 ,  H01L21/02 ,  H01L21/306 ,  C09K13/00 ,  C09K3/14 ,  H01L21/3105

CPC classification number: C09K13/06 ,  C09G1/02 ,  C09G1/04 ,  C09K3/1436 ,  C09K13/00 ,  H01L21/0206 ,  H01L21/02057 ,  H01L21/02065 ,  H01L21/02068 ,  H01L21/30604 ,  H01L21/31053 ,  H01L21/3212

Abstract: An intermediate raw material according to the present invention includes a charge control agent having a critical packing parameter of 0.6 or more and a dispersing medium and a pH of the intermediate raw material is less than 7.

公开(公告)号：US20210079264A1

公开(公告)日：2021-03-18

申请号：US17008872

申请日：2020-09-01

Applicant: FUJIMI INCORPORATED

Inventor： Ryota MAE ,  Shogo Onishi

IPC: C09G1/02 ,  H01L21/321

Abstract: A polishing composition according to the present invention contains colloidal silica and a quaternary ammonium compound represented by Formula (1), wherein a pH is less than 4.0, and a zeta potential of the colloidal silica is −60 mV or higher and −35 mV or lower.

公开(公告)号：US10478939B2

公开(公告)日：2019-11-19

申请号：US15760619

申请日：2016-09-21

Applicant: FUJIMI INCORPORATED

Inventor： Yukinobu Yoshizaki ,  Satoru Yarita ,  Shogo Onishi

IPC: B24B37/04 ,  B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321

Abstract: The present invention provides a means allowing achievement of sufficient planarization of the surface of an object to be polished containing two or more types of materials.The present invention is a polishing method for polishing an object to be polished containing two or more types of materials by using a polishing composition, the polishing method including equalization of the surface zeta potential of the object to be polished.

公开(公告)号：US10414019B2

公开(公告)日：2019-09-17

申请号：US15764271

申请日：2016-09-21

Applicant: FUJIMI INCORPORATED

Inventor： Takeki Sato ,  Yukinobu Yoshizaki ,  Shogo Onishi

IPC: B24B37/04 ,  C09G1/02 ,  C09K3/14 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321

Abstract: An object of the present invention is to provide a polishing composition enabling polishing of an object to be polished at higher speed.Provided is a polishing composition used for polishing an object to be polished in which the polishing composition contains surface-modified abrasive grains, in which an ionic dispersant is directly modified on the surface of the abrasive grains, and dispersing medium, and aggregation of the abrasive grains is suppressed in the dispersing medium.

公开(公告)号：US20240301242A1

公开(公告)日：2024-09-12

申请号：US18593021

申请日：2024-03-01

Applicant: FUJIMI INCORPORATED

Inventor： Shogo Onishi

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: Molybdenum polishing compositions and methods according to the present disclosure include abrasive particles, a first and a second oxidizers, and a first and a second molybdenum static etch rate suppressors, wherein the pH of the polishing composition is from 4 to 9. Compositions according to the present disclosure are effective to efficiently polish molybdenum at a high removal rate, which achieving a low molybdenum static etch rate, thereby obtaining a high Mo RR/SER ratio. Compositions and methods according to the present disclosure thus result in improved molybdenum polishing processes and higher-quality molybdenum surfaces than are achieved by conventional polishing compositions.

公开(公告)号：US11702570B2

公开(公告)日：2023-07-18

申请号：US16797177

申请日：2020-02-21

Applicant: FUJIMI INCORPORATED

Inventor： Ryota Mae ,  Tsutomu Yoshino ,  Shogo Onishi ,  Hirofumi Ikawa ,  Yasuto Ishida

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: An object of the present invention is to provide a new polishing composition that contributes to improving the quality of a device.
There is provided a polishing composition containing: an abrasive grain having an organic acid immobilized on a surface thereof; a first water-soluble polymer having a sulfonic acid group or a group having a salt thereof, or a carboxyl group or a group having a salt thereof; a second water-soluble polymer different from the first water-soluble polymer; a nonionic surfactant; and an aqueous carrier, wherein the polishing composition is used for polishing an object to be polished.

公开(公告)号：US11339310B2

公开(公告)日：2022-05-24

申请号：US16495442

申请日：2018-03-09

Applicant: FUJIMI INCORPORATED

Inventor： Shogo Onishi ,  Yukari Uehara ,  Kenichi Komoto

IPC: C09G1/02 ,  H01L21/321

Abstract: The present invention provides a polishing composition having a high polishing speed and a low etching speed and capable of achieving sufficient flattening.
The present invention is a polishing composition containing abrasive grains, an oxidizing agent, an acid, an anticorrosive containing a compound represented by the following formula (1) or a salt thereof, and a dispersing medium. (In the formula (1), R1 is a linear or branched alkyl group having 6 or more and 30 or less carbon atoms or a linear or branched alkenyl group having 6 or more and 30 or less carbon atoms, R2 is a single bond or an alkylene group having 1 or more and 4 or less carbon atoms, and R3 is a hydrogen atom or a linear or branched alkyl group having 1 or more and 10 or less carbon atoms.)

公开(公告)号：US10781410B2

公开(公告)日：2020-09-22

申请号：US16127536

申请日：2018-09-11

Applicant: FUJIMI INCORPORATED

Inventor： Yasuto Ishida ,  Tsutomu Yoshino ,  Shogo Onishi

IPC: C11D3/60 ,  C11D7/32 ,  C11D11/00 ,  C11D7/34 ,  C11D7/26 ,  H01L21/02 ,  C11D3/37 ,  H01L21/3105

Abstract: The composition for surface treatment according to the present invention includes a carboxylic acid compound having two or more nitrogen atoms, an ionic dispersing agent, and water, has a pH of less than 6, and is used for treating a surface of a polished object having a tungsten-containing layer.