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公开(公告)号：US11621178B2
公开(公告)日：2023-04-04
申请号：US16256760
申请日：2019-01-24
发明人： Takayuki Aoyama , Akitsugu Ueda , Mao Omori , Kazunori Amago
IPC分类号： H01L21/67 , H01L21/677 , C23C16/48 , C23C16/44 , C23C16/52 , H01L21/687 , H05B3/00
摘要： When pressure in a chamber is brought to atmospheric pressure and the chamber is filled with an inert gas atmosphere, the atmosphere in the chamber is sucked into an oxygen concentration analyzer through a sampling line such that oxygen concentration in the chamber is measured by the oxygen concentration analyzer. When the pressure in the chamber is reduced to less than atmospheric pressure, nitrogen gas is supplied to the oxygen concentration analyzer through an inert gas supply line simultaneously with suspending the measurement of oxygen concentration in the chamber. Even when the measurement of oxygen concentration in the chamber is suspended, reverse flow to the oxygen concentration analyzer from a gas exhaust pipe can be prevented, and the oxygen concentration analyzer can be prevented from being exposed to exhaust from the chamber. The configuration results in maintaining measurement accuracy of the oxygen concentration analyzer in a low oxygen concentration range.
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公开(公告)号：US20230047186A1
公开(公告)日：2023-02-16
申请号：US17402205
申请日：2021-08-13
申请人： Nano-Master, Inc.
发明人： Birol Kuyel
IPC分类号： C23C16/455 , C23C16/48
摘要： Techniques are disclosed for roll-to-roll (R2R) atomic layer deposition (ALD). R2R ALD is accomplished by arranging precursor nozzles in A/B pairs while a flexible web substrate moves underneath the A/B pairs at a uniform speed. Nozzles A of the A/B pairs continuously flow a precursor A into the process volume of the R2R ALD chamber. The plasma enhanced/activated ALD (PEALD/PAALD) embodiments utilize electron cyclotron rotation (ECR)-enhanced hollow cathode plasma sources (HCPS) where nozzles B flow activated neutrals of precursor B into the process volume. As the flexible web moves in an R2R motion, nucleates from precursor A deposited on the surface of the substrate, and neutrals of precursor B undergo a self-limiting reaction to deposit a single atomically sized ALD film/layer. In this manner, multiple ALD layers may be deposited by each successive A/B pair in a single pass of the web. There is also a heat source underneath the web to further facilitate the ALD reaction, or to support thermal ALD embodiments.
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公开(公告)号：US11574824B2
公开(公告)日：2023-02-07
申请号：US16312872
申请日：2017-04-04
发明人： Takayuki Aoyama , Shinichi Kato , Kazuhiko Fuse , Hikaru Kawarazaki , Masashi Furukawa , Hideaki Tanimura , Akitsugu Ueda
IPC分类号： H01L21/67 , H01L21/02 , H01L29/78 , H01L21/265 , C23C16/44 , C23C16/455 , C23C16/48 , H01L21/263
摘要： A semiconductor wafer to be treated is heated at a first preheating temperature ranging from 100 to 200° C. while a pressure in a chamber housing the semiconductor wafer is reduced to a pressure lower than an atmospheric pressure. After the semiconductor wafer is preheated to increase the temperature into a second preheating temperature ranging from 500 to 700° C. while the pressure in the chamber is restored to a pressure higher than the reduced pressure, a flash lamp emits a flashlight to a surface of the semiconductor wafer. Heating the semiconductor wafer at the first preheating temperature that is a relatively low temperature enables, for example, the moisture absorbed on the surface of the semiconductor wafer in trace amounts to be desorbed from the surface, and also enables the flash heating treatment to be performed with oxygen derived from such absorption removed as much as possible.
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公开(公告)号：US11535933B2
公开(公告)日：2022-12-27
申请号：US16952925
申请日：2020-11-19
发明人： Christopher J. Nagel
IPC分类号： C23C16/44 , C23C16/02 , C23C16/52 , C23C16/48 , C23C16/06 , C01B32/15 , C01B32/194 , C23C16/04 , C23C16/452 , C23C16/505 , B82Y30/00 , B82Y40/00
摘要： The invention includes apparatus and methods for instantiating and quantum printing materials, such as elemental metals, in a nanoporous carbon powder.
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公开(公告)号：US20220375772A1
公开(公告)日：2022-11-24
申请号：US17880412
申请日：2022-08-03
申请人： ASM IP Holding B.V.
发明人： Melvin Verbaas
IPC分类号： H01L21/67 , C23C16/48 , H01L21/687 , C23C16/458
摘要： A radiation shield and an assembly and a reactor including the radiation shield are disclosed. The radiation shield can be used to control heat flux from a susceptor heater assembly and thereby enable better control of temperatures across a surface of a substrate placed on a surface of the susceptor heater assembly.
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公开(公告)号：US11486035B2
公开(公告)日：2022-11-01
申请号：US16540974
申请日：2019-08-14
申请人： NPS Corporation , VERSARIEN PLC
发明人： Dong-kwan Won , Won-Sik Nam
摘要： A graphene synthesis chamber includes: a chamber case in which a substrate including a metal thin film is placed; a gas supply unit which supplies at least one gas comprising a carbon gas into an inner space of the chamber case; a main heating unit which emits at least one light to the inner space to heat the substrate; and at least one auxiliary heating unit which absorbs the at least one light and emits radiant heat toward the substrate.
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公开(公告)号：US11362256B2
公开(公告)日：2022-06-14
申请号：US16019839
申请日：2018-06-27
发明人： Joseph Pegna , Ram K. Goduguchinta , Kirk L. Williams , John L. Schneiter , Shay L. Harrison , Erik G. Vaaler
IPC分类号： H01L35/34 , D01F9/08 , D01F8/18 , H01L35/04 , H01L35/28 , C23C16/54 , H01L41/047 , C23C16/48 , C04B35/628 , B32B19/06 , C04B35/515 , C04B35/76 , C04B35/565 , C04B35/622 , C23C16/30 , C04B35/80 , C04B35/56 , C23C16/04 , H01L41/08 , H01L41/087
摘要： A method is provided for growing a fiber structure, where the method includes: obtaining a substrate, growing an array of pedestal fibers on the substrate, growing fibers on the pedestal fibers, and depositing a coating surrounding each of the fibers. In another aspect, a method of fabricating a fiber structure includes obtaining a substrate and growing a plurality of fibers on the substrate according to 1½D printing. In another aspect, a multilayer functional fiber is provided produced by, for instance, the above-noted methods.
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8.发明授权公开(公告)号：US11340386B1
公开(公告)日：2022-05-24
申请号：US16213902
申请日：2018-12-07
摘要： Embodiments of the disclosure are directed to index-gradient antireflective coatings that include a differential concentration of nanovoids versus thickness of the coating. In one embodiment, an index-gradient antireflective coating may have an index of refraction that varies from a first value to that of a second material. In another embodiment, the substrate may be optically transparent, and made of, for example, polymer, glass, or ceramics. The index-gradient antireflective coating can be fabricated using a non-uniform spin-coating process, by successive thermal evaporation, or by a chemical vapor deposition (CVD) process. In another embodiment, the spin-coating process can include multiple steps that include different concentrations of monomers to solvent, different spin-speeds, or different annealing times/temperatures. Similarly, the thermal evaporation can include multiple steps that include different concentrations of monomers, initiators, solvents, and associated processing parameters. Various other methods, systems, apparatuses, and materials are also disclosed.
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公开(公告)号：US20220098725A1
公开(公告)日：2022-03-31
申请号：US17426714
申请日：2020-01-15
申请人： Ionautics AB
发明人： Henrik Pedersen , Hama Nadhom
IPC分类号： C23C16/02 , H01L21/285 , H01J37/32 , C23C18/14 , C23C16/04 , C23C16/455 , C23C16/48
摘要： The present disclosure relates to a method for chemical vapour deposition on a substrate, the method comprising a precursor step and a reactant step, wherein the precursor step comprises chemisorbing a layer of precursor molecules on the substrate (170), and wherein the reactant step comprises adding to at least part of the substrate (170) surface species able to reduce the precursor molecule, whereby at least a part of the reduced precursor molecule is deposited on the substrate (170) surface, characterized by applying by means of a voltage source (130) a positive bias to at least part of the substrate (170) surface during at least part of the reactant step, wherein the step of adding the reducing species comprises providing by means of an electron source (150) electrons as free particles, whereby during the reactant step a closed electrical circuit is formed as the free electrons are transmitted to the substrate (170) surface.
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10.发明申请公开(公告)号：US20220074051A1
公开(公告)日：2022-03-10
申请号：US17194839
申请日：2021-03-08
申请人： Dynetics, Inc.
发明人： James L. Maxwell , Nicholas Webb , James Allen
IPC分类号： C23C16/48 , C04B35/622 , D01F9/127 , C04B35/58 , D04H1/4242 , C23C16/44 , C23C16/08 , C23C16/20 , C23C16/50 , C23C16/52 , D01F8/18
摘要： The disclosed methods and apparatus improve the fabrication of solid fibers and microstructures. In many embodiments, the fabrication is from gaseous, solid, semi-solid, liquid, critical, and supercritical mixtures using one or more low molar mass precursor(s), in combination with one or more high molar mass precursor(s). The methods and systems generally employ the thermal diffusion/Soret effect to concentrate the low molar mass precursor at a reaction zone, where the presence of the high molar mass precursor contributes to this concentration, and may also contribute to the reaction and insulate the reaction zone, thereby achieving higher fiber growth rates and/or reduced energy/heat expenditures together with reduced homogeneous nucleation. In some embodiments, the invention also relates to the permanent or semi-permanent recording and/or reading of information on or within fabricated fibers and microstructures. In some embodiments, the invention also relates to the fabrication of certain functionally-shaped fibers and microstructures. In some embodiments, the invention may also utilize laser beam profiling to enhance fiber and microstructure fabrication.
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