公开(公告)号：US20230067579A1

公开(公告)日：2023-03-02

申请号：US17790386

申请日：2020-12-21

申请人： Picosun Oy

发明人： Väinö KILPI

IPC分类号： C23C16/511 ,  C23C16/455

摘要： A substrate processing apparatus includes an inner chamber formed by an upper portion and a lower portion, a substrate support to support a substrate within the upper portion of the inner chamber, a plasma system to provide the inner chamber with plasma species from the top side of the inner chamber, and an outer chamber surrounding the upper portion of the inner chamber. The lower portion of the inner chamber extends to the outside of the outer chamber and remains uncovered by the outer chamber.

公开(公告)号：US11560627B2

公开(公告)日：2023-01-24

申请号：US15987273

申请日：2018-05-23

申请人： STARFIRE INDUSTRIES LLC

发明人： Brian Edward Jurczyk ,  Robert Andrew Stubbers

IPC分类号： C23C16/511 ,  C23C16/455 ,  C23C16/513 ,  C23C16/02 ,  H01J37/32 ,  C23C16/515 ,  C23C14/02 ,  C23C14/34 ,  H01J37/34

摘要： A system and method are described for depositing a material onto a receiving surface, where the material is formed by use of a plasma to modify a source material in-transit to the receiving surface. The system comprises a microwave generator electronics stage. The system further includes a microwave applicator stage including a cavity resonator structure. The cavity resonator structure includes an outer conductor, an inner conductor, and a resonator cavity interposed between the outer conductor and the inner conductor. The system also includes a multi-component flow assembly including a laminar flow nozzle providing a shield gas, a zonal flow nozzle providing a functional process gas, and a source material flow nozzle configured to deliver the source material. The source material flow nozzle and zonal flow nozzle facilitate a reaction between the source material and the functional process gas within a plasma region.

公开(公告)号：US11427909B2

公开(公告)日：2022-08-30

申请号：US15909813

申请日：2018-03-01

申请人： TOKYO ELECTRON LIMITED

发明人： Shinya Nishimoto

IPC分类号： C23C16/455 ,  H01J37/32 ,  C23C16/505 ,  C23C16/511

摘要： In a plasma processing apparatus for generating a plasma in a processing space of a processing chamber and performing plasma processing on a target object, the apparatus includes an antenna configured to radiate a microwave for plasma generation into the processing chamber through a ceiling plate. The plasma processing apparatus further includes a pressing mechanism provided above the antenna and configured to press the antenna against the ceiling plate by a pressure of fluid supplied thereinto.

公开(公告)号：US11371147B2

公开(公告)日：2022-06-28

申请号：US13994903

申请日：2011-12-14

申请人： Steven Edward Coe ,  Jonathan James Wilman ,  Daniel James Twitchen ,  Geoffrey Alan Scarsbrook ,  John Robert Brandon ,  Christopher John Howard Wort

发明人： Steven Edward Coe ,  Jonathan James Wilman ,  Daniel James Twitchen ,  Geoffrey Alan Scarsbrook ,  John Robert Brandon ,  Christopher John Howard Wort

IPC分类号： C23C16/27 ,  C23C16/455 ,  C23C16/511 ,  H01J37/32 ,  C30B29/04 ,  C30B25/10

摘要： A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor includes a plasma chamber, a substrate holder, a microwave coupling configuration for feeding microwaves into the plasma chamber, and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom. The gas flow system includes a gas inlet array having a plurality of gas inlets for directing the process gases towards the substrate holder. The gas inlet array includes at least six gas inlets disposed in a substantially parallel or divergent orientation relative to a central axis of the plasma chamber.

公开(公告)号：US20220148875A1

公开(公告)日：2022-05-12

申请号：US17586505

申请日：2022-01-27

申请人： Novellus Systems, Inc.

发明人： Bhadri N. VARADARAJAN ,  Bo GONG ,  Zhe GUI

IPC分类号： H01L21/02 ,  C23C16/505 ,  C23C16/511 ,  C23C16/32 ,  C23C16/452 ,  H01L29/49 ,  H01L21/768 ,  C23C16/04

摘要： Disclosed are methods and systems for providing silicon carbide films. A layer of silicon carbide can be provided under process conditions that employ one or more silicon-containing precursors that have one or more silicon-hydrogen bonds and/or silicon-silicon bonds. The silicon-containing precursors may also have one or more silicon-oxygen bonds and/or silicon-carbon bonds. One or more radical species in a substantially low energy state can react with the silicon-containing precursors to form the silicon carbide film. The one or more radical species can be formed in a remote plasma source.

公开(公告)号：US20220084793A1

公开(公告)日：2022-03-17

申请号：US17209480

申请日：2021-03-23

申请人： Sigma Carbon Technologies

发明人： Tarun Sharda ,  Rajneesh Bhandari

IPC分类号： H01J37/32 ,  C23C16/511 ,  C23C16/52

摘要： The invention provides a system for growth of one or more crystalline materials, specifically diamonds. The system comprises a microwave generator integrated with a pressure controller and an Optical Emission Spectrometer (OES) to form an Integrated Microwave Generator System (IMGS). The OES provides a real-time feedback loop to an IMGS controller based on microwave plasma input from a microwave plasma reactor, to control one or more parameters (power, pressure, power density, and pulsed power) in a closed loop and maintain required proposition of plasma constituents for the growth of diamonds in the microwave plasma reactor. The OES monitors real-time concentration of plasma constituents just above the growing surface of diamonds and feeds the real-time information to the IMGS controller to automatically adjust power density to maintain the concentration of plasma constituents on the growing surface of diamonds.

公开(公告)号：US11255016B2

公开(公告)日：2022-02-22

申请号：US16593942

申请日：2019-10-04

申请人： MKS Instruments, Inc.

发明人： Francesco Braghiroli ,  Paolo Balocchi

IPC分类号： H01J25/50 ,  H01J23/38 ,  C23C16/511 ,  H01J25/58 ,  H01J37/32 ,  C23C16/27 ,  H05H1/46

摘要： A microwave magnetron includes a cathode for emitting electrons, a filament for receiving a filament current to heat the cathode to enable to cathode to emit the electrons, and an anode to which anodic power can be applied to affect a flow of the electrons. An anodic power input receives the anodic power to be applied to the anode, the anodic power being characterized by an anodic current, an anodic voltage, and an anodic impedance, the anodic impedance being a quotient of the anodic voltage and the anodic current. An electromagnet power input receives electromagnet power and applies the electromagnet power to an electromagnet to control an intensity of a magnetic field, the electromagnet power being characterized by an electromagnet current. A controller adjusts at least one of the parameters of the magnetron to affect the flow of electrons while maintaining the anodic impedance constant.

公开(公告)号：US20210310117A1

公开(公告)日：2021-10-07

申请号：US17266933

申请日：2019-08-07

申请人： Cemvita Factory, Inc.

发明人： Tahereh Karimi

IPC分类号： C23C16/27 ,  C01B32/26 ,  C23C16/448 ,  C23C16/511

摘要： The present disclosure relates to methods and systems for producing structured carbon materials in a microgravity environment. A benefit of the methods and systems disclosed herein can include producing structured carbon materials having fewer defects and reducing excess carbon dioxide in an atmosphere by converting carbon dioxide from an ambient gas into a structured carbon material.

公开(公告)号：US20210221014A1

公开(公告)日：2021-07-22

申请号：US17226230

申请日：2021-04-09

申请人： BIC VIOLEX S.A.

发明人： Konstantinos MAVROEIDIS ,  Anastasios SIOZIOS ,  Vasileios PAPACHRISTOS

IPC分类号： B26B21/60 ,  C23C16/26 ,  C23C16/511 ,  C23C28/00

摘要： A hard coating for a substrate or portion of a razor blade wherein a main layer of the hard coating includes graphene and/or any combination of derivatives thereof. The graphene may be deposited on the substrate or portion of the razor blade using plasma assisted chemical vapor deposition (PECVD) or similar process.

公开(公告)号：US20210164103A1

公开(公告)日：2021-06-03

申请号：US17106521

申请日：2020-11-30

申请人： Tokyo Electron Limited

发明人： Ryota IFUKU ,  Takashi MATSUMOTO ,  Masahito SUGIURA ,  Makoto WADA

IPC分类号： C23C16/511 ,  H01L21/02 ,  H01J37/32 ,  C23C16/26 ,  C23C16/44

摘要： There is provided a film forming method of forming a carbon-containing film by a microwave plasma from a microwave source, the film forming method including: a dummy step of performing a dummy process by generating plasma of a first carbon-containing gas within a processing container; a placement step of placing a substrate on a stage within the processing container; and a film forming step of forming the carbon-containing film on the substrate using plasma of a second carbon-containing gas.