公开(公告)号：US20220148875A1

公开(公告)日：2022-05-12

申请号：US17586505

申请日：2022-01-27

申请人： Novellus Systems, Inc.

发明人： Bhadri N. VARADARAJAN ,  Bo GONG ,  Zhe GUI

IPC分类号： H01L21/02 ,  C23C16/505 ,  C23C16/511 ,  C23C16/32 ,  C23C16/452 ,  H01L29/49 ,  H01L21/768 ,  C23C16/04

摘要： Disclosed are methods and systems for providing silicon carbide films. A layer of silicon carbide can be provided under process conditions that employ one or more silicon-containing precursors that have one or more silicon-hydrogen bonds and/or silicon-silicon bonds. The silicon-containing precursors may also have one or more silicon-oxygen bonds and/or silicon-carbon bonds. One or more radical species in a substantially low energy state can react with the silicon-containing precursors to form the silicon carbide film. The one or more radical species can be formed in a remote plasma source.

公开(公告)号：US20240145234A1

公开(公告)日：2024-05-02

申请号：US18539977

申请日：2023-12-14

申请人： Novellus Systems, Inc.

发明人： Bhadri N. VARADARAJAN ,  Bo GONG ,  Zhe GUI

IPC分类号： H01L21/02 ,  C23C16/04 ,  C23C16/32 ,  C23C16/452 ,  C23C16/505 ,  C23C16/511 ,  H01L21/768 ,  H01L29/49

CPC分类号： H01L21/02167 ,  C23C16/045 ,  C23C16/325 ,  C23C16/452 ,  C23C16/505 ,  C23C16/511 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/76831 ,  H01L21/76834 ,  H01L29/4983 ,  H01L29/4991 ,  H01L21/7682 ,  H01L2221/1047

摘要： Disclosed are methods and systems for providing silicon carbide films. A layer of silicon carbide can be provided under process conditions that employ one or more silicon-containing precursors that have one or more silicon-hydrogen bonds and/or silicon-silicon bonds. The silicon-containing precursors may also have one or more silicon-oxygen bonds and/or silicon-carbon bonds. One or more radical species in a substantially low energy state can react with the silicon-containing precursors to form the silicon carbide film. The one or more radical species can be formed in a remote plasma source.