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公开(公告)号：US20220069829A1
公开(公告)日：2022-03-03
申请号：US17006490
申请日：2020-08-28
摘要： One embodiment provides an optical encoder. The optical encoder includes an optical comb source to generate a multi-wavelength optical signal; a number of optical filters sequentially coupled to the optical comb source, with a respective optical filter being tunable to pass or block a particular wavelength of the multi-wavelength optical signal based on a corresponding bit value of a multi-bit search word; and a common output for the optical filters to output the filtered multi-wavelength optical signal, which encodes the multi-bit search word and can be used as an optical search signal for searching an optical content-addressable memory (CAM).
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2.发明申请公开(公告)号：US20170206952A1
公开(公告)日：2017-07-20
申请号：US15406236
申请日：2017-01-13
发明人： Ashok KUMAR , Hitesh BORKAR , Vaibhav RAO , Monika TOMAR , Vinay GUPTA
CPC分类号： G11C11/42 , B05D5/12 , G11C11/22 , G11C11/2273 , G11C11/2275 , G11C11/5657 , G11C13/04 , H01L28/55
摘要： The invention deals with multi-states nonvolatile opto-ferroelectric memory element and method of preparing the same thereof. This invention describes multi-states nonvolatile opto-ferroelectric memory element consisting of opto-ferroelectric memory material comprised of Pb1-x(Bi0.5Li0.5)x(Ti1-yZry)O3, wherein x=0.2 to 0.8 and y=0.2 to 0.6, said memory material (PBLZT) phtotovoltaic ferroelectric material is characterized by a single-phase opto-ferroelectric materials, photovoltaic and multi-states ferroelectric memory material. The invention relates to process of preparing multi-states nonvolatile opto-ferroelectric memory material by solid route, solution-gel process and pulsed laser process. It describes development of multi-states nonvolatile opto-ferroelectric memory material at room temperature. Invention describes a ferroelectric material whose polarization is switched by white light and low power LASER (10-50 mW) with wavelength (405 nm).
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公开(公告)号：US09595328B2
公开(公告)日：2017-03-14
申请号：US14914030
申请日：2014-08-14
发明人： Emanuel Loertscher
CPC分类号： G11C13/047 , G02B5/008 , G02B6/1226 , G02B6/262 , G02B2207/101 , G02F1/0126 , G02F3/00 , G02F2203/10 , G11C11/42 , G11C13/025 , G11C13/044 , G11C2213/77
摘要： A state-changeable device includes a first and a second particle arranged in proximity to each other; and a coupling material between the first and the second particle; wherein the first and the second particle are adapted to provide a charge carrier distribution such that surface plasmon polaritons (SPP) occur; the coupling material is adapted to exhibit a variable conductivity in response to a trigger signal thereby changing an electro-optical coupling between the first and the second particle; and the first and the second particle are arranged in proximity to each other such that a first SPP configuration corresponds to a first electro-optical coupling between the first and the second particle and a second SPP configuration corresponds to a second electro-optical coupling between the first and the second particle.
摘要翻译： 状态可变装置包括彼此靠近排列的第一和第二颗粒; 和第一和第二颗粒之间的耦合材料; 其中所述第一和第二颗粒适于提供电荷载体分布，使得发生表面等离子体激元极化子（SPP）; 耦合材料适于响应于触发信号呈现可变导电性，从而改变第一和第二颗粒之间的电 - 光耦合; 并且第一和第二颗粒被布置成彼此靠近，使得第一SPP配置对应于第一和第二颗粒之间的第一电光耦合，而第二SPP配置对应于第一和第二颗粒之间的第二电光耦合 第一和第二颗粒。
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公开(公告)号：US09530489B2
公开(公告)日：2016-12-27
申请号：US14527166
申请日：2014-10-29
发明人： Pierre Caubet , Mickael Gros-Jean
CPC分类号： G11C11/42 , G02F1/15 , G02F1/1523 , G02F1/1525 , G02F1/1527 , G02F1/163 , G02F3/022 , G02F2001/1512 , G02F2001/1635 , G02F2201/58 , G11C7/00 , G11C13/04
摘要： A memory device may include an access transistor, and a memory cell configured to store an item of information. The memory cell may include first and second electrodes configured to have different optoelectronic states corresponding respectively to two values of the item of information, and to switch between the different optoelectronic states based upon a control signal external to the memory cell, the different optoelectronic states being naturally stable in an absence of the control signal. The memory cell may also include a solid electrolyte between the first and second electrodes.
摘要翻译： 存储器件可以包括存取晶体管，以及被配置为存储信息项的存储单元。 存储单元可以包括被配置为具有分别对应于信息项的两个值的不同光电子状态的第一和第二电极，以及基于存储单元外部的控制信号在不同的光电子态之间切换，不同的光电子态是 在没有控制信号的情况下自然稳定。 存储单元还可以包括在第一和第二电极之间的固体电解质。
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5.发明申请公开(公告)号：US20150170738A1
公开(公告)日：2015-06-18
申请号：US14133389
申请日：2013-12-18
发明人： RENE A. LUJAN , TSE NGA NG , ROBERT A. STREET
IPC分类号： G11C11/42 , H01L31/167 , H01L31/024 , H01L31/103 , H01L27/144 , H01L29/786 , H01L25/16
CPC分类号： G11C11/42 , G11C13/0002 , G11C13/04 , H01L25/167 , H01L27/1446 , H01L29/7869 , H01L31/024 , H01L31/103 , H01L31/167 , H01L2924/0002 , H01L2924/00
摘要： A ultra-violet sensor has a gate on a substrate, a dielectric formed over the gate and the substrate, an oxide semiconductor formed over the dielectric, and a source electrode and a drain electrode formed at the edges of the oxide semiconductor. A memory device has an array of ultra-violet sensors, each sensor having a gate on a substrate, a dielectric formed over the gate and the substrate, an oxide semiconductor formed over the dielectric, and a source electrode and a drain electrode formed at the edges of the oxide semiconductor, an array of ultra-violet light sources corresponding to the array of ultra-violet sensors, an array of detectors electrically coupled to the array of ultra-violet sensors, driving circuitry attached to the array of sensors and the ultra-violet light sources to allow addressing of the arrays, and a reset mechanism.
摘要翻译： 紫外线传感器在基板上具有栅极，在栅极和基板上形成的电介质，形成在电介质上的氧化物半导体，以及形成在氧化物半导体的边缘处的源电极和漏电极。 存储器件具有紫外线传感器阵列，每个传感器在衬底上具有栅极，在栅极和衬底上形成的电介质，形成在电介质上的氧化物半导体，以及形成在该电极上的源电极和漏电极 氧化物半导体的边缘，对应于紫外线传感器阵列的紫外光源的阵列，电耦合到紫外线传感器阵列的检测器阵列，连接到传感器阵列的驱动电路和超 紫色光源以允许对阵列进行寻址，以及复位机制。
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公开(公告)号：US08379438B2
公开(公告)日：2013-02-19
申请号：US12593937
申请日：2008-03-19
CPC分类号： H01L45/1286 , H01L45/06 , H01L45/1226
摘要： An electronic device comprising a heat transfer structure and a phase change structure which is convertible between two phase states by heating, wherein the phase change structure is electrically conductive in at least one of the two phase states, wherein the heat transfer structure is arranged to be heated by radiation impinging on the heat transfer structure, wherein the phase change structure is thermally coupled to the heat transfer structure so that the phase change structure is convertible between the two phase states when the radiation impinges on the heat transfer structure.
摘要翻译： 一种电子设备，包括传热结构和相变结构，其可通过加热在两相状态之间转换，其中所述相变结构在所述两相状态中的至少一个中导电，其中所述传热结构被布置为 通过辐射照射在传热结构上加热，其中相变结构热耦合到传热结构，使得当辐射照射在传热结构上时，相变结构可在两相状态之间转换。
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公开(公告)号：US07548445B2
公开(公告)日：2009-06-16
申请号：US12128738
申请日：2008-05-29
申请人： Chin-Hsi Lin , Chi-Ming Weng
发明人： Chin-Hsi Lin , Chi-Ming Weng
摘要： An over-driven access method and device for ferroelectric memory. When accessing the data stored in a ferroelectric memory, the invention further provides an over-driven current to slightly reduce/raise the voltages in bit lines BL and BL′ to further enlarge the voltage difference therebetween after having raised the plate-line/bit-line voltage using the plate-line/bit-line driven method.
摘要翻译： 用于铁电存储器的过驱动访问方法和装置。 当访问存储在铁电存储器中的数据时，本发明还提供过驱动电流以稍微降低/升高位线BL和BL'中的电压，以在升高板线/位位线之后进一步扩大它们之间的电压差， 线路电压采用板线/位线驱动方式。
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公开(公告)号：US07345902B2
公开(公告)日：2008-03-18
申请号：US11081711
申请日：2005-03-17
申请人： Nishanth Kulasekeram , Simon Tam
发明人： Nishanth Kulasekeram , Simon Tam
CPC分类号： H01L27/1052 , H01L27/10805 , H01L27/11 , H01L27/11502
摘要： An optoelectronic device is disclosed with a light source, a wave guide and a first signal line, wherein a cell is formed at the intersection between the wave guide and the first signal line. The cell includes a light activated switch and an output device. The optoelectronic device may be an optoelectronic memory wherein the output device is a storage unit. Alternatively the optoelectronic device may be an optoelectronic display device wherein the output device is a light emitting device or a liquid crystal device.
摘要翻译： 公开了具有光源，波导和第一信号线的光电子器件，其中在波导和第一信号线之间的交叉处形成单元。 电池包括一个光启动开关和一个输出装置。 光电子器件可以是光电存储器，其中输出器件是存储单元。 或者，光电子器件可以是光电显示器件，其中输出器件是发光器件或液晶器件。
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公开(公告)号：US07154766B2
公开(公告)日：2006-12-26
申请号：US10934358
申请日：2004-09-07
申请人： Kohei Oikawa , Daisaburo Takashima
发明人： Kohei Oikawa , Daisaburo Takashima
CPC分类号： G11C11/22
摘要： An aspect of the present invention provides a ferroelectric memory comprising a cell block having a plurality of unit cells connected in series, one end of the cell block being connected to a plate line and the other end of the cell block being connected to a bit line through a block selecting transistor, a sense amplifier connected to the bit line, and a block selector decoder which controls ON/OFF of the block selecting transistor. The timing for operating the sense amplifier and block selector decoder is changed corresponding to a position of a selected unit cell objective for data read of the plurality of unit cells.
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公开(公告)号：US07092276B2
公开(公告)日：2006-08-15
申请号：US11048255
申请日：2005-01-31
申请人： Katsuo Komatsuzaki
发明人： Katsuo Komatsuzaki
CPC分类号： G11C11/22
摘要： Memory devices and memory cell groups therefor are disclosed, which comprise series connected ferroelectric (FE) memory cells accessible using a single bitline. The cells individually comprise a transistor and an FE capacitor where a single cell within the group or array is connected to a bitline for external access during read, write, and/or restore operations. Methods are also disclosed for reading target cells in a memory cell group.
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