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公开(公告)号：US12027308B2
公开(公告)日：2024-07-02
申请号：US18130304
申请日：2023-04-03
发明人： Masaya Nishioka , Diane L. Brown , Jianhua Hu , Cherngye Hwang
CPC分类号： H01F41/14 , C23C14/34 , H01F10/14 , G11B5/3163 , G11B5/33 , G11B5/3932 , G11B2220/90
摘要： The present disclosure generally relates to a storage device comprising soft bias structures having high coercivity and high anisotropy, and a method of forming thereof. The soft bias structures may be formed by moving a wafer in a first direction under a plume of NiFe to deposit a first NiFe layer at a first angle, moving the wafer in a second direction anti-parallel to the first direction to deposit a second NiFe layer at a second angle on the first NiFe layer, and repeating one or more times. The soft bias structures may be formed by rotating a wafer to a first position, depositing a first NiFe layer at a first angle, rotating the wafer to a second position, depositing a second NiFe layer at a second angle on the first NiFe layer, and repeating one or more times. The first and second NiFe layers have different grain structures.
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公开(公告)号：US11926097B2
公开(公告)日：2024-03-12
申请号：US17317934
申请日：2021-05-12
发明人： Thomas Baranowski , Maik Broda , Markus Franzen , Pascal Rebmann
IPC分类号： B29C64/245 , B29C64/118 , B33Y10/00 , B33Y30/00 , H01F1/147 , H01F41/14 , B29K505/00
CPC分类号： B29C64/245 , B29C64/118 , B33Y10/00 , B33Y30/00 , H01F1/147 , H01F41/14 , B29K2505/00 , B29K2995/0008
摘要： An additive manufacturing method for a component, the component being produced layerwise by fused filament fabrication, includes magnetizing a substrate plate, depositing at least one first layer on the substrate plate, this first layer including a first substance that contains magnetic material, depositing at least one further layer of a second substance, and demagnetizing the substrate plate. An apparatus for producing a component by fused filament fabrication includes a substrate plate for depositing layers of the component, wherein the substrate plate is magnetized before depositing a first layer on the substrate plate, the first layer including a first substance that contains magnetic material, and further layers including a second substance that does not contain a magnetic material are deposited on the first layer, and the substrate plate is demagnetized after forming the part.
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3.发明公开公开(公告)号：US20240047108A1
公开(公告)日：2024-02-08
申请号：US18489449
申请日：2023-10-18
发明人： Masanori ABE , Takeshi TORITA , Kojiro KOMAGAKI
CPC分类号： H01F1/20 , H01F41/14 , C22C14/00 , B22F1/054 , B22F7/00 , B22F2999/00 , B22F2998/10 , B22F2301/205 , C22C2202/02
摘要： A magnetic material that includes: particles of a layered material including one or more layers and magnetic metal ions in contact with the one or more layers, wherein the one or more layers include a layer body represented by: MmXn, wherein M is at least one metal of Group 3, 4, 5, 6, or 7, X is a carbon atom, a nitrogen atom, or a combination thereof, n is not less than 1 and not more than 4, and m is more than n but not more than 5, and a modifier or terminal T is present on a surface of the layer body, wherein T is at least one selected from a hydroxyl group, a fluorine atom, a chlorine atom, an oxygen atom, and a hydrogen atom, and wherein the particles have an average value of thickness of not less than 1 nm and not more than 10 nm.
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公开(公告)号：US11631535B1
公开(公告)日：2023-04-18
申请号：US17495994
申请日：2021-10-07
发明人： Masaya Nishioka , Diane L. Brown , Jianhua Hu , Cherngye Hwang
摘要： The present disclosure generally relates to a storage device comprising soft bias structures having high coercivity and high anisotropy, and a method of forming thereof. The soft bias structures may be formed by moving a wafer in a first direction under a plume of NiFe to deposit a first NiFe layer at a first angle, moving the wafer in a second direction anti-parallel to the first direction to deposit a second NiFe layer at a second angle on the first NiFe layer, and repeating one or more times. The soft bias structures may be formed by rotating a wafer to a first position, depositing a first NiFe layer at a first angle, rotating the wafer to a second position, depositing a second NiFe layer at a second angle on the first NiFe layer, and repeating one or more times. The first and second NiFe layers have different grain structures.
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公开(公告)号：US20220101677A1
公开(公告)日：2022-03-31
申请号：US17485582
申请日：2021-09-27
发明人： Sotaro OANA , Makoto OMURA , Toshiaki YAMAGAMI
摘要： A magnetic sheet includes a sheet, line-shaped N first magnetic members arranged on the sheet and having magnetic properties, and line-shaped N second magnetic members arranged on the sheet and having magnetic properties, where N denotes the number of the first magnetic members and denotes the number of the second magnetic members.
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公开(公告)号：US20210354384A1
公开(公告)日：2021-11-18
申请号：US17317934
申请日：2021-05-12
发明人： Thomas Baranowski , Maik Broda , Markus Franzen , Pascal Rebmann
IPC分类号： B29C64/245 , H01F1/147 , H01F41/14 , B33Y10/00 , B33Y30/00 , B29C64/118
摘要： An additive manufacturing method for a component, the component being produced layerwise by fused filament fabrication, includes magnetizing a substrate plate, depositing at least one first layer on the substrate plate, this first layer including a first substance that contains magnetic material, depositing at least one further layer of a second substance, and demagnetizing the substrate plate. An apparatus for producing a component by fused filament fabrication includes a substrate plate for depositing layers of the component, wherein the substrate plate is magnetized before depositing a first layer on the substrate plate, the first layer including a first substance that contains magnetic material, and further layers including a second substance that does not contain a magnetic material are deposited on the first layer, and the substrate plate is demagnetized after forming the part.
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公开(公告)号：US11114225B2
公开(公告)日：2021-09-07
申请号：US16077961
申请日：2017-02-28
摘要： A rare-earth thin film magnet is provided which includes Nd, Fe and B as essential components, characterized by including a Si substrate having an oxide film present on a surface thereof, a Nd base film formed as a first layer over the Si substrate, and a Nd—Fe—B film formed as a second layer on the first layer. The rare earth thin film magnet and a production process therefor provides a rare earth thin film magnet suffering neither film separation nor substrate breakage and having satisfactory magnetic properties even when the second layer has composition in the range of 0.120 ≤Nd/(Nd+Fe)
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公开(公告)号：US20200279995A1
公开(公告)日：2020-09-03
申请号：US16876658
申请日：2020-05-18
发明人： Huanlong Liu , Yuan-Jen Lee , Jian Zhu , Guenole Jan , Luc Thomas , Po-Kang Wang , Ru-Ying Tong , Jodi Iwata
摘要： A magnetic tunnel junction with perpendicular magnetic anisotropy (PMA MTJ) is disclosed wherein a free layer interfaces with a tunnel barrier and has a second interface with an oxide layer. A lattice-matching layer adjoins an opposite side of the oxide layer with respect to the free layer and is comprised of CoXFeYNiZLWMV or an oxide or nitride of Ru, Ta, Ti, or Si, wherein L is one of B, Zr, Nb, Hf, Mo, Cu, Cr, Mg, Ta, Ti, Au, Ag, or P, and M is one of Mo, Mg, Ta, Cr, W, or V, (x+y+z+w+v)=100 atomic %, x+y>0, and each of v and w are >0. The lattice-matching layer grows a BCC structure during annealing thereby promoting BCC structure growth in the oxide layer that results in enhanced free layer PMA and improved thermal stability.
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公开(公告)号：US10665383B2
公开(公告)日：2020-05-26
申请号：US15603816
申请日：2017-05-24
发明人： Nian-Xiang Sun
IPC分类号： H01F29/14 , H01F41/04 , H01F41/34 , H01F21/08 , H01F27/28 , H01F41/14 , H01F41/32 , H01F10/26
摘要： A method of manufacturing an electrostatically tunable magnetoelectric inductor, the method includes forming a piezoelectric layer on a substrate. The method further includes forming a magnetoelectric structure over the piezoelectric layer by: forming a first electrically conductive layer disposed above the piezoelectric layer; forming an isolation layer configured to translate changes in strain; forming a magnetic film layer disposed over the isolation layer; and forming a second electrically conductive layer, disposed over the magnetic film layer and wherein the second electrically conductive layer is in electrical communication with the first electrically conductive layer so as to form at least one electrically conductive coil around the magnetic film layer.
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公开(公告)号：US10460862B2
公开(公告)日：2019-10-29
申请号：US15512014
申请日：2015-10-16
申请人： HITACHI, LTD.
发明人： Toshiya Doi , Shigeru Horii , Toshiaki Kusunoki
摘要： An object of the invention is to provide: an MgB2 superconducting thin-film wire that exhibits excellent Jc characteristics even under a 20 K magnetic field; and a method for producing thereof. The MgB2 superconducting thin-film wire includes a long substrate and an MgB2 thin film formed on the long substrate. The MgB2 thin film has a microtexture such that MgB2 columnar crystal grains stand densely together on the surface of the long substrate, and has Tc of 30 K or higher. In grain boundary regions of the MgB2 columnar crystal grains, a predetermined transition metal element is dispersed and segregated. The predetermined transition metal element is an element having a body-centered cubic lattice structure.
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