APPARATUS AND METHODS FOR CAPACITIVELY COUPLED PLASMA VAPOR PROCESSING OF SEMICONDUCTOR WAFERS
    3.
    发明申请
    APPARATUS AND METHODS FOR CAPACITIVELY COUPLED PLASMA VAPOR PROCESSING OF SEMICONDUCTOR WAFERS 有权
    用于电容耦合等离子体蒸汽处理半导体波形的装置和方法

    公开(公告)号:US20130154479A1

    公开(公告)日:2013-06-20

    申请号:US13767526

    申请日:2013-02-14

    发明人: Mark Kiehlbauch

    IPC分类号: H01J1/13

    摘要: A capacitively coupled plasma reactor comprising a processing chamber, a first electrode, a second electrode and a thermoelectric unit. The processing chamber has an upper portion with a gas inlet and a lower portion, and the upper portion is in fluid communication with the lower portion. The first electrode has a front side and a backside and is positioned at the upper portion of the processing chamber. The second electrode is positioned in the lower portion of the processing chamber and is spaced apart from the front side of the first electrode. The thermoelectric unit is positioned proximate to the backside of the first electrode and is capable of heating and cooling the first electrode.

    摘要翻译: 一种电容耦合等离子体反应器,包括处理室,第一电极,第二电极和热电单元。 处理室具有上部,其具有气体入口和下部,并且上部与下部流体连通。 第一电极具有前侧和后侧,并且位于处理室的上部。 第二电极位于处理室的下部并且与第一电极的前侧间隔开。 热电单元位于第一电极的后侧附近并且能够加热和冷却第一电极。

    Device for driving directly heated cathode of cathode ray tube
    6.
    发明授权
    Device for driving directly heated cathode of cathode ray tube 失效
    用于驱动阴极射线管直接加热阴极的装置

    公开(公告)号:US5744911A

    公开(公告)日:1998-04-28

    申请号:US576589

    申请日:1995-12-21

    IPC分类号: H04N3/19 H01J1/13 H01J29/98

    CPC分类号: H01J1/135

    摘要: A device for driving a directly heated cathode of a cathode ray tube eliminating a delay due to inductance of a transformer. A transformer that produces the heater-heating signal voltage applied to the cathode includes a secondary coil divided into first and second coils. The voltage induced in the first coil is used for the heater-heating voltage and the signal induced in the second coil is synchronized with the voltage induced in the first coil and used as a bias voltage for turning on and off a switching element in synchronization with the heater-heating voltage. The switching element turns on only when the heater-heating signal voltage is applied to a control terminal of the switching element.

    摘要翻译: 用于驱动阴极射线管的直接加热阴极的装置,消除由于变压器的电感引起的延迟。 产生施加到阴极的加热器 - 加热信号电压的变压器包括被分成第一和第二线圈的次级线圈。 在第一线圈中感应的电压用于加热器加热电压,并且在第二线圈中感应的信号与在第一线圈中感应的电压同步并且用作用于与开关元件同步的导通和断开的偏置电压 加热器加热电压。 仅当加热器 - 加热信号电压施加到开关元件的控制端子时,开关元件才导通。

    Thermionic electron source
    8.
    发明授权
    Thermionic electron source 失效
    THERMIONIC电子源

    公开(公告)号:US5118983A

    公开(公告)日:1992-06-02

    申请号:US495127

    申请日:1990-03-19

    IPC分类号: H01J1/13 H01J9/04

    CPC分类号: H01J9/04 H01J1/13

    摘要: A high temperature low density operating element includes a porous high temperature operating element film formed into a predetermined configuration and disposed on one surface of an insulating member with good heat conductivity, a resistive film with a high melting point and good heat conductivity having a higher density than the high temperature operating element film, formed into a predetermined configuration on a second surface of the insulating member with good heat conductivity, a lead wire connected to the resistive film, an insulating protective film disposed on the insulating member covering the resistive film.

    Method of manufacturing a thermionic cathode and thermionic cathode
manufactured by means of said method
    10.
    发明授权
    Method of manufacturing a thermionic cathode and thermionic cathode manufactured by means of said method 失效
    通过所述方法制造的热离子阴极和热离子阴极的制造方法

    公开(公告)号:US4533852A

    公开(公告)日:1985-08-06

    申请号:US447079

    申请日:1982-12-06

    CPC分类号: H01J9/04 H01J1/14

    摘要: The cathode (4) the material of which is substantially high-melting metal such as W, Mo, Ta, Nb, Re and/or C, consists of a very fine-grained mechanically stable support layer (5), a series of layers (6) considerably enriched with emissive material, in general from the scandium group especially from the group of rare earth metals, preferably with Th or compounds thereof and a thermally stable preferentially oriented coating layer (7). All the layers are provided via the gaseous phase, for example, CVD methods, on a substrate (1) formed according to the desired cathode geometry. The substrate (1) is removed after termination of the deposition. FIG. 2.

    摘要翻译: 其材料基本上是高熔点金属如W,Mo,Ta,Nb,Re和/或C的阴极(4)由非常细粒度的机械稳定的支撑层(5)组成,一系列层 (6)通常来自钪基团,特别是来自稀土金属的组,优选与Th或其化合物和热稳定的优先取向的涂层(7)相比富集发射材料。 通过气相(例如CVD方法)在根据所需阴极几何形状形成的基底(1)上提供所有层。 在沉积终止之后去除衬底(1)。 图。 2。