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公开(公告)号：US20230180610A1
公开(公告)日：2023-06-08
申请号：US17741352
申请日：2022-05-10
发明人： Sung Han KIM , Se Yeon HWANG , Joon Woo GI , Jong Ho CHUNG , Han KIM
摘要： A thermoelectric module includes a stack structure of a plurality of insulating layers, a plurality of thermoelectric elements formed with the insulating layer interposed therebetween and including a first-type semiconductor device, a second-type semiconductor device, a first electrode connected to the first-type semiconductor device, a second electrode connected to the second-type semiconductor device, and a connection electrode connecting the first-type and second-type semiconductor devices, and a conductive via penetrating through the insulating layer to connect thermoelectric elements adjacent to each other, among the plurality of thermoelectric elements.
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公开(公告)号：US11573034B2
公开(公告)日：2023-02-07
申请号：US16322930
申请日：2016-08-09
申请人： SABANCI ÜNIVERSITESI
发明人： Ali Kosar
摘要： A device including a liquid's flow path having an upstream side and a downstream side, a plurality of flow restrictive elements providing material communication between the upstream side to the downstream side, a thermoelectric generator or a thermophotovoltaic cell in thermal connection with a portion of the device located at the downstream side with respect to the plurality of flow restrictive elements. The portion is provided with roughness elements for, in use, contacting a fluid flowing through the device and facilitating collapse of cavitation bubbles.
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公开(公告)号：US20230012332A1
公开(公告)日：2023-01-12
申请号：US17949209
申请日：2022-09-20
申请人： Sheetak, Inc.
发明人： Uttam Ghoshal
摘要： The present disclosure is related to structures for and methods for producing thermoelectric devices. The thermoelectric devices include multiple stages of thermoelements. Each stage includes alternating n-type and p-type thermoelements. The stages are sandwiched between upper and lower sets of metal links fabricated on a pair of substrate layers. The metal links electrically connect pairs of n-type and p-type thermoelements from each stage. There may be additional sets of metal links between the multiple stages. The individual thermoelements may be sized to handle differing amounts of electric current to optimize performance based on their location within the multistage device.
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公开(公告)号：US20220416143A1
公开(公告)日：2022-12-29
申请号：US17620742
申请日：2020-06-19
摘要： A thermoelectric conversion material includes a base material that is a semiconductor having Si and Ge as constituent elements, a first additive element that is different from the constituent elements, has a vacant orbital in a d or f orbital located inside an outermost shell thereof, and forms a first additional level in a forbidden band of the base material, and oxygen. The oxygen content ratio is 6 at % or less.
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公开(公告)号：US11508893B2
公开(公告)日：2022-11-22
申请号：US16612466
申请日：2018-05-17
发明人： Naoki Sadayori
IPC分类号： H01L35/18 , H01L35/22 , H01L35/34 , H01L35/26 , H01L35/24 , H01L35/28 , C01B33/06 , B28B11/24 , B22F3/10 , B22F3/105 , B82Y30/00
摘要： A semiconductor sintered body comprising a polycrystalline body, wherein the polycrystalline body comprises silicon or a silicon alloy, and the average grain size of the crystal grains constituting the polycrystalline body is 1 μm or less, and the electrical conductivity is 10,000 S/m or higher.
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公开(公告)号：US11456406B2
公开(公告)日：2022-09-27
申请号：US16957642
申请日：2018-12-26
摘要： Provided is a silicon bulk thermoelectric conversion material in which thermoelectric performance is improved by reducing the thermal conductivity as compared with the prior art. In the silicon bulk thermoelectric conversion material, the ZT is greater than 0.2 at room temperature with the elemental silicon. In the silicon bulk thermoelectric conversion material, a plurality of silicon grains have an average of 1 nm or more and 300 nm or less, a first hole have an average of 1 nm or more and 30 nm or less present in the plurality of silicon grains and surfaces of the silicon grains, and a second hole have an average of 100 nm or more and 300 nm or less present between the plurality of silicon grains, wherein the aspect ratio of a crystalline silicon grain is less than 10.
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公开(公告)号：US20220223777A1
公开(公告)日：2022-07-14
申请号：US17365245
申请日：2021-07-01
发明人： Sang Sig KIM , Kyoung Ah CHO , Yoon Beom PARK
摘要： The present disclosure relates to an integrated dual-sided all-in-one energy system including a plurality of vertically stacked dual-sided all-in-one energy apparatuses, each including an energy-harvesting device and an energy-storage device disposed on both sides of a substrate, and according to one embodiment of the present disclosure, an integrated dual-sided all-in-one energy system may include a plurality of dual-sided all-in-one energy apparatuses, each including an energy-harvesting device that is formed as an electrode pattern on one side of a substrate and generates electrical energy by harvesting energy based on a temperature difference between a first side and a second side and an energy-storage device that is formed on the other side of the substrate and is selectively connected to the energy-harvesting device based on the electrode pattern to store the generated electrical energy.
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公开(公告)号：US11384107B2
公开(公告)日：2022-07-12
申请号：US17050655
申请日：2019-04-26
摘要： Provided is an easy-to-process thermoelectric conversion device whose shape can be freely changed. The device is provided containing electrodes and an ionic solid, wherein the ionic solid has: an anionic heterometal complex aggregated to form a crystal lattice; and a cationic species present in interstices of the crystal lattice, and wherein the anionic heterometal complex includes: a metal M1 selected from the group consisting of the elements of Groups 8, 9 and 10 of the Periodic Table and Cr and Mn; a metal M2 selected from the group consisting of the elements of Groups 11 and 12 of the Periodic Table; and a ligand.
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9.发明授权公开(公告)号：US11251353B2
公开(公告)日：2022-02-15
申请号：US15957952
申请日：2018-04-20
申请人： HITACHI, LTD.
发明人： Akinori Nishide , Jyun Hayakawa , Ken Kurosaki , Sora-at Tanusilp
IPC分类号： H01L35/22 , H01L35/28 , H01L35/34 , C04B35/626 , C01B33/06 , C04B35/645 , C04B35/58 , C22C29/18
摘要： There is provided a thermoelectric material including a compound which is formed of an element R belonging to alkaline earth metal and lanthanoid, and an element X belonging to any of Group 13 elements, Group 14 elements, and Group 15 elements. The composition ratio of the element R and the element X is selected to obtain the compound having an AlB2 type structure.
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公开(公告)号：US11217739B2
公开(公告)日：2022-01-04
申请号：US16619447
申请日：2018-06-07
发明人： Ryo Teranishi , Shinji Munetoh , Osamu Furukimi
摘要： A semiconductor substrate contains a clathrate compound of the following General Formula (I). The semiconductor substrate includes a variable-composition layer which includes a pn junction and where composition of the clathrate compound varies along a thickness direction. A rate of change in y in the thickness direction of at least a portion of the variable-composition layer is 1×10−4/μm or more. AxByC46-y (I) In General Formula (I), A represents at least one element selected from the group consisting of Ba, Na, Sr, and K, B represents at least one element selected from the group consisting of Au, Ag, Cu, Ni, and Al, and C represents at least one element selected from the group consisting of Si, Ge, and Sn, x is 7 to 9, and y is 3.5 to 6 or 11 to 17.
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