-
公开(公告)号：WO2013082863A1
公开(公告)日：2013-06-13
申请号：PCT/CN2012/001016
申请日：2012-07-30
Applicant: 安集微电子(上海)有限公司 , 宋伟红 , 姚颖 , 孙展龙
IPC: C09G1/02
CPC classification number: C09G1/02 , C09K3/1463 , H01L21/3212 , H01L21/76898
Abstract: 一种适用于硅通孔（TSV）阻挡层的化学机械抛光液，至少含有一种磨料，一种复合金属铜腐蚀抑制剂，一种络合剂，一种氮化硅调节剂，该抛光液具有较高的二氧化硅去除速率，和较低的氮化硅去除速率，能够对阻挡层进行高效的平坦化，并停止在氮化硅层，形成硅通孔，同时不产生金属腐蚀，具有较高的缺陷校正能力和较低的表面污染物指标。
-
公开(公告)号：WO2013020351A1
公开(公告)日：2013-02-14
申请号：PCT/CN2012/000764
申请日：2012-06-04
Applicant: 安集微电子(上海)有限公司 , 宋伟红 , 姚颖 , 孙展龙
IPC: C09G1/02
CPC classification number: C09G1/02 , C09K3/1463 , H01L21/31053
Abstract: 本发明公开了一种用于浅槽隔离的化学机械抛光液。该抛光液至少含有含有一种二氧化铈的磨料，一种有机膦酸，一种pH调节剂，和载体水，具有较高的高密度等离子体二氧化硅和较低的氮化硅的去除速率，抛光后的表面平坦光洁，稳定性好，适用于浅槽隔离的化学机械平坦化。
-
-
-
公开(公告)号：WO2009070968A1
公开(公告)日：2009-06-11
申请号：PCT/CN2008/001857
申请日：2008-11-07
Applicant: 安集微电子(上海)有限公司 , 宋伟红 , 包建鑫 , 姚颖
IPC: C09G1/02
CPC classification number: C09G1/02 , C09K3/1463 , H01L21/31053 , H01L21/3212
Abstract: A chemical-mechanical polishing liquid is disclosed, which comprises silica doped by aluminum, mixed corrosive inhibitors, water and one or more kinds of the following rate-accelerators: organic acid, fluoride, ammonia, quaternary amine salts and the derivatives thereof. The polishing liquid has higher polishing rate for higher dielectric (such as TEOS), and can secure higher polishing rate adjustability of Cu adjusted by the concentration of oxidizer, and has better the effect of defect-correction, so it can suitably be used in controlling and adjusting the abrasion degree at different line width in semiconductor device.
-
Patent Agency Ranking
公开(公告)号：WO2009006784A1
公开(公告)日：2009-01-15
申请号：PCT/CN2008/001259
申请日：2008-07-01
Applicant: 安集微电子(上海)有限公司 , 陈国栋 , 宋伟红 , 姚颖 , 宋成兵
CPC classification number: C09G1/02 , C01B33/146 , C09C1/3081 , C09K3/1454
Abstract: The invention discloses a modified silicon dioxide sol, manufacturing method and use of the same, and a polishing liquid containing the same. The surface of the silicon dioxide of the modified silicon dioxide sol is bonded with epoxy-group-containing silane coupling agent. Modification is performed after mixing the silicon dioxide sol, surfactant and epoxy-group-containing silane coupling agent. Among the modified silicon dioxide sol according to the invention, surfaces of the silicon dioxide particles are grafted with epoxy groups, and on the one hand it can change hydrophilicity of the silicon dioxide particles, and on the other hand it can change the interaction between the silicon dioxide particles and the surfaces of wafer or polishing pad. Due to the improvement of the two properties, it can achieve higher polishing rates of TEOS and BD, and can bring less effect on polishing of Ta and Cu.
-
公开(公告)号：WO2008025208A1
公开(公告)日：2008-03-06
申请号：PCT/CN2007/002101
申请日：2007-07-09
IPC: C09G1/02 , H01L21/304 , C09K3/14
CPC classification number: C09G1/02 , C09K3/1463 , H01L21/31053 , H01L21/3212
Abstract: A polishing slurry containing blended abrasives for low dielectric material is disclosed, which includes two or more kinds of polishing abrasives, wherein, one of the abrasives is Al-doped silica, and the second abrasive is the one selected from silica, alumina, alumina -coated silica or zirconia-coated silica or their combinations. The present polishing slurry not only can effectively adjust the polishing speed of low dielectric carbon-doped silica (CDO) and silica, but also can prevent local and throughout corrosion during metal polishing, thus can improve the acceptability. Moreover, it is useful in integrate circuit which contains metal,metal barrier, carbon-doped silica and silica simultaneously.
-
公开(公告)号：WO2007137508A1
公开(公告)日：2007-12-06
申请号：PCT/CN2007/001696
申请日：2007-05-24
IPC: C09G1/02 , H01L21/304 , C09K3/14
CPC classification number: H01L21/31053 , C09G1/02 , C09K3/1463 , H01L21/3212
Abstract: A polishing slurry for subtle surface planarization and its using method are disclosed. The present polishing slurry for subtle surface planarization includes abrasive and water, it is characterized in that the abrasive is a colloidal Al-doped silica abrasive, this colloidal Al-doped silica abrasive is an aqueous dispersion of Al-doped silica. When using the present polishing slurry for subtle surface planarization in CMP process, the downward pressure is 0.5-3psi. The present polishing slurry for subtle surface -planarization can effectively polish Ta, TaN, TEOS, FSG, BD or other lower dielectric material and so on, and the polishing rate for lower dielectric material can be increased by two times, while excellent planarization effect can be obtained.
-
公开(公告)号：WO2011069343A1
公开(公告)日：2011-06-16
申请号：PCT/CN2010/002032
申请日：2010-12-13
Applicant: 安集微电子(上海)有限公司 , 姚颖 , 宋伟红 , 荆建芬 , 孙展龙
IPC: C09G1/02
CPC classification number: C09G1/02 , C09K3/1463 , H01L21/3212
-
公开(公告)号：WO2008025209A1
公开(公告)日：2008-03-06
申请号：PCT/CN2007/002102
申请日：2007-07-09
IPC: C09G1/02 , H01L21/304 , C09K3/14
CPC classification number: C09G1/02 , C09K3/1463 , H01L21/31053 , H01L21/3212
Abstract: A polishing slurry for low dielectric material is disclosed. It includes abrasive and water, and is characterized in that, it further contains one or more kinds of metal chelating agents, azole-species as film-forming agent and oxidizing agent. Under lower pressure, the present polishing slurry has higher polishing speed on low dielectric material, suitable polishing selectivity for other materials, and better surface finish after polishing.
-
-
-
-
-
-
-
-
-
Search Results
25
records
(took 0.01 seconds)
