公开(公告)号：WO2003048407A1

公开(公告)日：2003-06-12

申请号：PCT/US2002/032592

申请日：2002-10-11

Applicant: EPION CORPORATION

Inventor： SKINNER, Wesley, J. ,  HAUTALA, John, J.

IPC: C23C14/32

CPC classification number: H01L21/02063 ,  H01J2237/0812 ,  H01J2237/31 ,  H01L21/02046 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76862 ,  H01L21/76865

Abstract: Reactive gas cluster ion beam processing using gas cluster ions comprising a mixture of gases cleans and/or etches the bottoms of electrical interconnect vias and/or trenches in integrated circuits(900) to produce interconnect structures(902) with lower contact resistances and better reliability than was previously achieved with conventional processes. In one embodiment, an electrical interconnect via structure (902) uses a dielectric or high resistivity diffusion barrier material (702).

Abstract translation: 使用包含气体混合气体的气体团簇离子的反应性气体团簇离子束处理可清洗和/或蚀刻集成电路（900）中电互连通孔和/或沟槽的底部，以产生具有较低接触电阻和更好可靠性的互连结构（902） 比以前通过常规方法实现。 在一个实施例中，电互连通孔结构（902）使用电介质或高电阻率扩散阻挡材料（702）。

公开(公告)号：WO02101113B1

公开(公告)日：2003-03-27

申请号：PCT/EP0206085

申请日：2002-06-04

Applicant: SWISS PLAS COM AG ,  CURTINS HERMANN ,  GABRIEL HERBERT M

Inventor： CURTINS HERMANN

IPC: C23C14/02 ,  C23C14/24 ,  C23C14/32 ,  C23F4/00 ,  H01J37/32

CPC classification number: C23C14/022 ,  C23C14/325 ,  H01J37/32055 ,  H01J37/32623

Abstract: The invention relates to a method and device for treating a substrate (20) in an arc vaporization device (10). An arc current of intensity I flows in an evacuated space (12) in the arc vaporization device between an anode and a metal target (14,16,18) which acts as a cathode. Said arc current is used to vaporize the target material and produce a metal ion density. The invention aims to treat the substrate (20) without causing undesirable heating thereof. As a result, the metal ion density per target (14,16,18) is set by at least partially covering the target, said density being effective for treating substrates.

Abstract translation: 本发明涉及一种用于处理电弧蒸发设备（10）中的基板（20）的方法和设备，其中在阳极和金属靶（14,16,18）之间的真空空间（12） ）流动强度为I的电弧电流以蒸发靶材料并产生金属离子密度。 为了允许这种处理的基片（20）不发生不希望的加热是有效用于治疗每个目标基体金属离子密度的（14，16，18）是由至少部分地覆盖该目标，提出调整。

公开(公告)号：WO02092510A1

公开(公告)日：2002-11-21

申请号：PCT/US0215447

申请日：2002-05-14

Applicant: BWXT Y 12 L L C ,  UT BATTELLE LLC ,  HY TECH RES CORP

Inventor： MORROW MARVIN STANLEY ,  SCHECHTER DONALD E ,  TSAI CHIN-CHI ,  NIEMEL JOHN ,  HAZELTON ROBERT C ,  KLEPPER C CHRISTOPHER

IPC: C04B35/58 ,  C04B35/632 ,  C04B35/634 ,  C04B35/638 ,  C04B35/65 ,  C23C14/14 ,  C23C14/32 ,  C01B35/00 ,  C04B35/64

CPC classification number: C23C14/325 ,  C04B35/5805 ,  C04B35/583 ,  C04B35/6264 ,  C04B35/63 ,  C04B35/632 ,  C04B35/634 ,  C04B35/638 ,  C04B35/64 ,  C04B35/645 ,  C04B35/65 ,  C04B2235/421 ,  C04B2235/604 ,  C04B2235/658 ,  C04B2235/667 ,  C23C14/14

Abstract: Boron powders are sintered and densified utilizing a microwave envrionment for so doing.

Abstract translation: 硼粉末是用微波环境烧结和致密化的。

公开(公告)号：WO02078407A2

公开(公告)日：2002-10-03

申请号：PCT/JP0202747

申请日：2002-03-22

Applicant: EBARA CORP ,  JAPAN GOVERNMENT ,  SAMUKAWA SEIJI ,  ICHIKI KATSUNORI ,  YAMAUCHI KAZUO ,  HIYAMA HIROKUNI

Inventor： SAMUKAWA SEIJI ,  ICHIKI KATSUNORI ,  YAMAUCHI KAZUO ,  HIYAMA HIROKUNI

IPC: H05H1/46 ,  C23C14/32 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H05H3/02

CPC classification number: H05H3/02

Abstract: A neutral particle beam processing apparatus comprises a workpiece holder (20) for holding a workpiece (X), a plasma generator for generating a plasma in a vacuum chamber (3) by applying a high-frequency electric field, an orifice electrode (4) disposed between the workpiece holder (20) and the plasma generator, and a grid electrode (5) disposed upstream of the orifice electrode (4) in the vacuum chamber (3). The orifice electrode (4) has orifices (4a) defined therein. The neutral particle beam processing apparatus further comprises a voltage applying unit for applying a voltage between the orifice electrode (4) which serves as an anode and the grid electrode (5) which serves as a cathode, while the high-frequency electric field applied by the plasma generator is being interrupted, to accelerate negative ions in the plasma generated by the plasma generator and pass the accelerated negative ions through the orifices (4a) in the orifice electrode (4).

Abstract translation: 一种中性粒子束加工设备，包括：用于保持工件（X）的工件保持器（20）;用于通过施加高频电场在真空室（3）中产生等离子体的等离子体发生器;孔电极（4） 设置在工件支架（20）和等离子体发生器之间，以及设置在真空室（3）中的孔口电极（4）上游的栅极（5）。 孔电极（4）具有限定在其中的孔（4a）。 中性粒子束处理装置还包括电压施加单元，用于在用作阳极的节流孔电极（4）和用作阴极的栅极电极（5）之间施加电压，而施加的高频电场 等离子体发生器被中断，以加速由等离子体发生器产生的等离子体中的负离子，并使加速的负离子穿过孔电极（4）中的孔（4a）。

公开(公告)号：WO02078040A2

公开(公告)日：2002-10-03

申请号：PCT/JP0202748

申请日：2002-03-22

Applicant: EBARA CORP ,  ICHIKI KATSUNORI ,  YAMAUCHI KAZUO ,  HIYAMA HIROKUNI ,  SAMUKAWA SEIJI

Inventor： ICHIKI KATSUNORI ,  YAMAUCHI KAZUO ,  HIYAMA HIROKUNI ,  SAMUKAWA SEIJI

IPC: H05H1/46 ,  B01J19/08 ,  C23C14/32 ,  C23C16/50 ,  H01J27/16 ,  H01J37/08 ,  H01J37/317 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H05H3/02 ,  H01J37/00

CPC classification number: H01J37/321 ,  H01J37/3178 ,  H01J37/32357 ,  H05H3/02

Abstract: A neutral particle beam processing apparatus comprises a plasma generator for generating positive ions and/or negative ions in a plasma, a pair of electrodes (5, 6) involving the plasma generated by the plasma generator therebetween, and a power supply (102) for applying a voltage between the pair of electrodes (5, 6). The pair of electrodes (5, 6) accelerate the positive ions and/or the negative ions generated by the plasma generator. The positive ions and/or the negative ions are neutralized and converted into neutral particles while being drifted in the plasma between the pair of electrodes (5, 6) toward a workpiece (X). The accelerated neutral particles pass through one of the electrodes (6) and are applied to the workpiece (X).

Abstract translation: 一种中性粒子束处理设备包括：等离子体发生器，用于在等离子体中产生正离子和/或负离子;一对电极（5,6），其包括等离子体发生器之间产生的等离子体;以及电源（102），用于 在一对电极（5,6）之间施加电压。 该对电极（5,6）加速由等离子体发生器产生的正离子和/或负离子。 正离子和/或负离子被中和并转化为中性粒子，同时在一对电极（5,6）之间的等离子体中向工件（X）漂移。 加速的中性粒子穿过其中一个电极（6）并施加到工件（X）上。

公开(公告)号：WO0137310A3

公开(公告)日：2002-04-11

申请号：PCT/US0031756

申请日：2000-11-17

Applicant: TOKYO ELECTRON LTD ,  TOKYO ELECTRON ARIZONA INC ,  DREWERY JOHN STEPHEN ,  REYNOLDS GLYN ,  RUSSELL DERREK ANDREW ,  BRCKA JOZEF ,  VUKOVIC MIRKO ,  GRAPPERHAUS MICHAEL JAMES ,  CERIO FRANK MICHAEL JR ,  GITTELMAN BRUCE DAVID

Inventor： DREWERY JOHN STEPHEN ,  REYNOLDS GLYN ,  RUSSELL DERREK ANDREW ,  BRCKA JOZEF ,  VUKOVIC MIRKO ,  GRAPPERHAUS MICHAEL JAMES ,  CERIO FRANK MICHAEL JR ,  GITTELMAN BRUCE DAVID

IPC: C23C14/32 ,  C23C14/34 ,  C23C14/35 ,  H01J37/32 ,  H01J37/34 ,  H01L21/203 ,  H01L21/285 ,  H05H1/46

CPC classification number: C23C14/358 ,  C23C14/345 ,  C23C14/35 ,  H01J37/321 ,  H01J37/32477 ,  H01J37/3408 ,  H01J37/3429

Abstract: Ionized Physical Vapor Deposition (IPVD) is provided by a method of apparatus (500) particularly useful for sputtering conductive metal coating material from an annular magnetron sputterin target (10). The sputtered material is ionized in a processing space between the target (10) and a substrate (100) by generating a dense plasma in the space with energy coupled from a coil (39) located outside of the vacuum chamber (501) behind a dielectric window (33) in the chamber wall (502) at the center of the opening (421) in the sputtering target. A Faraday type shield (26) physically shields the window to prevent coating material from coating the window, while allowing the inductive coupling of energy from the coil into the processing space. The location of the coil in the plane of the target or behind the target allows the target-to-wafer spacing to be chosen to optimize film deposition rate and uniformity, and also provides for the advantages of a ring-shaped source without the problems associated with unwanted deposition in the opening at the target center.

Abstract translation: 离子化物理气相沉积（IPVD）由装置（500）的方法提供，特别适用于从环形磁控管溅射靶（10）溅射导电金属涂层材料。 溅射的材料通过在空间中产生致密的等离子体而在目标（10）和基板（100）之间的处理空间中离子化，其能量从位于真空室（501）外侧的线圈（39）耦合到电介质 在溅射靶中的开口（421）的中心处的室壁（502）中的窗（33）。 法拉第型屏蔽（26）物理地屏蔽窗户，以防止涂层材料涂覆窗户，同时允许将来自线圈的能量感应耦合到处理空间中。 线圈在目标平面中或靶子后面的位置允许选择目标到晶片间距以优化膜沉积速率和均匀性，并且还提供环形源的优点，而没有相关的问题 在目标中心的开口中有不想要的沉积。

公开(公告)号：WO02016664A1

公开(公告)日：2002-02-28

申请号：PCT/BE2001/000142

申请日：2001-08-23

IPC: G02B6/44 ,  C03C25/42 ,  C23C14/24 ,  C23C14/32 ,  C23C14/34 ,  H01J37/34

CPC classification number: H01J37/3432 ,  C23C14/246 ,  C23C14/32 ,  C23C14/3414 ,  H01J37/3408

Abstract: The invention concerns a method and a device for depositing a metal coating on a substrate (1) which consists in a cold plasma deposition inside a heated confinement chamber (7) so as to avoid the formation of a metal deposit at its surface, said chamber (7) having an inlet orifice (21) and an outlet orifice (22) through which the substrate to be coated enters and leaves said chamber, a metal vapour source, forming an electrode, being provided in said chamber enabling the formation of plasma (6) therein, a counter-electrode being formed by the substrate (1) or by a separate electrically conducting element. The invention is characterised in that it consists in introducing the metal, with which a metal coating is to be formed on the substrate (1), in molten state in a retention tank (8) communicating with the confinement chamber (7) and in maintaining the molten metal in said tank (8) at a substantially constant level while the metal coating is being formed.

Abstract translation: 本发明涉及一种用于在基板（1）上沉积金属涂层的方法和装置，该方法和装置包括在加热的限制室（7）内的冷等离子体沉积中，以避免在其表面形成金属沉积物，所述室 （7）具有入口孔（21）和出口孔（22），待涂覆的基底通过所述入口孔（21）进入和离开所述室，形成电极的金属蒸气源设置在所述室中，能够形成等离子体 6）中，由电极（1）形成的对置电极或单独的导电元件形成。 本发明的特征在于，在与限制室（7）连通的保持罐（8）中以熔融状态引入要在其上形成金属涂层的金属，并保持 当形成金属涂层时，所述罐（8）中的熔融金属处于基本恒定的水平。

公开(公告)号：WO02006554A1

公开(公告)日：2002-01-24

申请号：PCT/AU2001/000869

申请日：2001-07-17

IPC: C01B31/02 ,  C23C14/06 ,  C23C14/32 ,  C23C16/50 ,  C23C26/00 ,  C23C4/04 ,  C23C4/00

CPC classification number: C23C14/325 ,  C23C14/0605

Abstract: The present invention relates to the depositing of carbon and carbon-based materials to produce hard carbon films or carbon-based films. The present methods for producing carbon films and carbon-based films include chemical vapour deposition and filtered arc systems. Both have problems. The present invention discloses a method and apparatus which utilises an arc system comprising an anode and a cathode both of graphite. The graphite anode is used to produce the carbon or carbon-based film precursor material. In order to control the quality and rate of deposition of the precursor material onto a substrate, the arc attachment area to the anode is controlled. Minimising the arc attachment area can increase the rate of deposition.

Abstract translation: 本发明涉及碳和碳基材料的沉积以制备硬碳膜或碳基膜。 本发明的碳膜和碳膜的制造方法包括化学气相沉积和过滤电弧系统。 两者都有问题。 本发明公开了一种利用包括石墨的阳极和阴极的电弧系统的方法和装置。 石墨阳极用于生产碳或碳基膜前体材料。 为了控制前体材料沉积到基底上的质量和速率，控制到阳极的电弧附着区域。 最小化电弧附着面积可以增加沉积速率。

公开(公告)号：WO01098553A1

公开(公告)日：2001-12-27

申请号：PCT/SE2001/001416

申请日：2001-06-19

IPC: H05H1/24 ,  B01J3/00 ,  B01J19/08 ,  C23C14/00 ,  C23C14/32 ,  C23C14/35 ,  H01J37/34

CPC classification number: H01J37/3266 ,  C23C14/0068 ,  C23C14/35 ,  H01J37/3408

Abstract: When using pulsed highly ionized magnetic sputtering for reactive deposition the pressure of the reactive gas in the area of the electrodes is drastically reduced by designing the anode electrode as a tube (3) having an opening facing the surface of the cathode (7) and an opposite opening facing the process chamber (11). The work piece (13) is placed in the process chamber which is connected (31) to a vacuum system and to which the reactive gas is supplied (29). The sputtering non-reactive gas is supplied (23) in the region of the cathode. Inside the anode tube the ions are guided by a stationary magnetic field generated by at least one coil (27) wound around the anode, the generated magnetic field thus being substantially parallel to the axis of the anode tube. The anode tube can be separated from the process chamber by a restraining device such as a diaphragm (41) having a suitably sized aperture or a suitably adapted magnetic field arranged at the connection of the anode with the process chamber. By the reduction of the pressure of the reactive gas at the cathode and anode the formation of compound layers on the surfaces of the electrodes between which the magnetron discharges occur is avoided resulting in stable discharges and a very small risk of arcing. Also, the neutral component in the plasma flow can be prevented from reaching the process chamber. By suitably operating the device e.g. sputtering of coatings in deep via holes for high-density interconnections on semiconductor chips can be efficiently made.

Abstract translation: 当使用脉冲高电离磁性溅射进行反应沉积时，通过设计阳极作为具有面向阴极（7）表面的开口的管（3），电极区域中的反应气体的压力大大降低，并且 面对处理室（11）的相对开口。 工件（13）被放置在与真空系统连接（31）并且供应反应气体的处理室（29）中。 溅射非反应性气体在阴极的区域中被供给（23）。 在阳极管内部，离子被由围绕阳极缠绕的至少一个线圈（27）产生的固定磁场引导，所产生的磁场基本上平行于阳极管的轴线。 阳极管可以通过约束装置（例如具有适当尺寸的孔的隔膜41或与阳极与处理室的连接处布置的适当适应的磁场）与处理室分离。 通过降低阴极和阳极处的反应性气体的压力，避免了在电极表面产生磁控管放电的化合物层的形成，导致稳定的放电和非常小的电弧的风险。 而且，可以防止等离子体流中的中性成分到达处理室。 通过适当地操作该装置，例如 可以有效地制造用于半导体芯片上的高密度互连的深通孔中的涂层溅射。

公开(公告)号：WO01086707A1

公开(公告)日：2001-11-15

申请号：PCT/JP2001/003822

申请日：2001-05-07

IPC: C01B33/113 ,  C23C14/10 ,  C23C14/32 ,  H01L21/768 ,  H01L21/316

CPC classification number: C23C14/10 ,  C01B33/113 ,  C23C14/32 ,  H01L21/7682 ,  H01L2221/1047

Abstract: A low relative permittivity SiOx film excellent in heat resistance and produced without using any alkaline metal and fluorine, a method for transforming an SiOx film with a lower relative permittivity and an improved insulation, and a semiconductor device free of crack and separation and highly reliable by using such a low relative permittivity SiOx film as an interlayer insulating film for metallic interconnection are disclosed. The low relative permittivity film is characterized in that it is made of a porous material the major constituent of which is SiOx (where 1.8 >/= X >/= 1.0), and the relative permittivity at 1 MHz is 3 or less.

Abstract translation: 在不使用碱金属和氟的情况下耐热性优异且不产生碱金属和氟的低相对介电常数SiO x膜，具有较低相对介电常数和改进绝缘性的SiOx膜的转化方法，以及无裂纹和分离的半导体器件 公开了使用这种低相对介电常数SiO x膜作为金属互连的层间绝缘膜。 低相对介电常数薄膜的特征在于其主要成分为SiOx（其中1.8> / = X> / = 1.0）的多孔材料，1MHz的相对介电常数为3以下。