公开(公告)号：WO2021121952A1

公开(公告)日：2021-06-24

申请号：PCT/EP2020/084050

申请日：2020-12-01

Applicant: HEIQ MATERIALS AG

Inventor： CHOI, Kyoungjun ,  PARK, Hyung Gyu ,  HEIGHT, Murray

IPC: B01D67/00 ,  A41D31/102 ,  B01D71/02 ,  B32B9/00 ,  C01B32/186 ,  C23C16/02 ,  C30B25/18 ,  B01D2323/24 ,  B01D2325/08 ,  B01D67/0053 ,  B01D67/0062 ,  B01D71/021 ,  C23C16/0281 ,  C23C16/04 ,  C23C16/26 ,  C30B25/186 ,  C30B29/02 ,  C30B29/60

Abstract: Method for making a porous graphene layer (5) of a thickness of less than 100 nm, comprising the following steps: providing a catalytically active substrate (1), said catalytically active substrate (1) on its surface (3) being provided with a plurality of catalytically inactive domains (2) having a size essentially corresponding to the size of the pores (6) in the resultant porous graphene layer (5); chemical vapour deposition and formation of the porous graphene layer (5) on the surface (3) of the catalytically active substrate (1); wherein the catalytically active substrate (1) is a copper-nickel alloy substrate with a copper content in the range of 98 to less than99.96 % by weight and a nickel content in the range of more than 0.04-2 % by weight, the copper and nickel contents complementing to 100% by weight of the catalytically active substrate (1).

公开(公告)号：WO2021068087A1

公开(公告)日：2021-04-15

申请号：PCT/CA2020/051368

申请日：2020-10-13

Applicant: UNIVERSAL MATTER INC.

Inventor： MANCEVSKI, Vladimir

IPC: C01B32/184 ,  C01B32/00 ,  C01B32/182 ,  C04B35/52 ,  C04B35/645 ,  C30B29/02 ,  C30B29/64 ,  C30B30/02

Abstract: A device for converting a carbon pill into graphene is provided including a space between at least two electrically conductive surfaces, wherein the electrically conductive surfaces are configured to support a carbon pill in the space. The device also includes at least two electrodes electrically coupled to the at least two electrically conductive surfaces. The device also includes a power supply connected to the electrodes for passing a current through the electrodes to convert the carbon pill into graphene. A carbon pill for graphene conversion is also provided including a first carbon material for synthesizing to graphene by joule heating. The first carbon material is compressed from a powder form into a pill form. The carbon pill includes a second material for at least one of binding the first carbon material from a powder form into a pill form and improving conductivity of the first carbon material.

公开(公告)号：WO2019084025A1

公开(公告)日：2019-05-02

申请号：PCT/US2018/057134

申请日：2018-10-23

Applicant: MONTROSE BIOSYSTEMS LLC

Inventor： DUNHAM, Joseph P. ,  YAFFEE, Marcus

IPC: C30B29/02 ,  C30B29/52 ,  C30B29/60

CPC classification number: C30B29/02 ,  C30B29/52 ,  C30B29/60

Abstract: Nanoparticles, nanoparticle conjugates, devices for making nanoparticles and nanoparticle conjugates, and related methods of use and synthesis are described.

公开(公告)号：WO2018142061A1

公开(公告)日：2018-08-09

申请号：PCT/FR2018/050217

申请日：2018-01-31

Applicant: SOITEC

Inventor： GHYSELEN, Bruno ,  BETHOUX, Jean-Marc

IPC: C30B23/02 ,  C30B23/04 ,  C30B25/18 ,  C30B29/02 ,  H01L21/683 ,  C30B33/06

Abstract: L'invention concerne un procédé de fabrication d'un film bidimensionnel d'un matériau du groupe IV présentant une structure cristalline hexagonale, notamment de graphène, comprenant : - la formation d'un substrat de croissance (100), comprenant le transfert d'un film métallique (1) monocristallin adapté pour la croissance dudit film bidimensionnel sur un substrat support (2), et - la croissance par épitaxie du film (3) bidimensionnel sur le film métallique dudit substrat (100).

公开(公告)号：WO2018125591A1

公开(公告)日：2018-07-05

申请号：PCT/US2017/066301

申请日：2017-12-14

Applicant: UT-BATTELLE, LLC

Inventor： LIST, III, Frederick Alyious ,  STEHLE, Yijing Y. ,  VLASSIOUK, Ivan V. ,  SMIRNOV, Sergei N.

IPC: C30B25/18 ,  C30B29/02

CPC classification number: C30B25/025 ,  C23C16/26 ,  C23C16/45563 ,  C23C16/545 ,  C30B25/14 ,  C30B29/02

Abstract: Systems and methods for synthesizing continuous single crystal graphene are provided. A catalytic substrate is drawn through a chemical vapor deposition chamber in a first lengthwise direction while flowing a hydrogen gas through the chemical vapor deposition chamber in the same lengthwise direction. A hydrocarbon precursor gas is supplied directly above a surface of the catalytic substrate. A high concentration gradient of the hydrocarbon precursor at the crystal growth front is generated to promote the growth of a continuous single crystal graphene film while suppressing the growth of seed domains ahead of the crystal growth front.

公开(公告)号：WO2017041401A1

公开(公告)日：2017-03-16

申请号：PCT/CN2016/000282

申请日：2016-05-26

Applicant: PEKING UNIVERSITY

Inventor： LIU, Kaihui ,  XU, Xiaozhi ,  ZHANG, Zhihong ,  YU, Dapeng ,  WANG, Enge

IPC: C30B29/02 ,  C30B25/18

CPC classification number: C30B25/18 ,  C01B32/186 ,  C30B29/02

Abstract: Disclosed here is a method for rapid growth of large single-crystal graphene assisted by adjacent oxide substrate with chemical vapour deposition system under atmospheric pressure, wherein metal foils are naturally placed on oxide substrates with very narrow spaces between them. O released from the oxide substrates at high temperature could diffuse to the metal surface and involve in the catalytic reactions on the surface of metal foils. This would drastically lower the barrier of the feedstock decomposition and increase the carbon species supply by orders of magnitude, which enables the rapid growth. This method solves a lot of problems in the field of large single-crystal graphene growth， such as expensive monocrystalline substrates, complex pre-treatment of metal foils and a rather long growth cycle. Thus our technique realizes the synthesis of large single-crystal in a very short time and with an efficient cost.

Abstract translation: 这里公开了一种用于在大气压下用化学气相沉积系统辅助的大型单晶石墨烯快速生长的方法，其中金属箔自然地放置在氧化物基底上，其间具有非常窄的空间。 在高温下从氧化物基底释放的O可以扩散到金属表面并涉及金属箔表面的催化反应。 这将大大降低原料分解的障碍，并将碳物质供应量提高数量级，从而实现快速增长。 该方法解决了大型单晶石墨烯生长领域的诸多问题，如昂贵的单晶基板，金属箔的复杂预处理和较长的生长周期。 因此，我们的技术在很短的时间内以高效的成本实现了大单晶的合成。

公开(公告)号：WO2015184555A1

公开(公告)日：2015-12-10

申请号：PCT/CA2015/050525

申请日：2015-06-08

Applicant: GROUP NANOXPLORE INC. ,  BOZALINA, Marie ,  PERRET, Philippe ,  NAZARPOUR, Soroush

Inventor： BOZALINA, Marie ,  PERRET, Philippe ,  NAZARPOUR, Soroush

IPC: C30B33/00 ,  B02C15/00 ,  C30B29/02 ,  C30B29/64

CPC classification number: C01B31/0446 ,  B02C17/20 ,  B02C17/22 ,  B82Y40/00 ,  C01B31/04 ,  C01B31/0423 ,  C01B32/184 ,  C01B32/20 ,  C01B32/225 ,  C01B2204/04 ,  C09D1/00 ,  C09D5/084 ,  C09D5/24 ,  C09K5/14 ,  C10M103/02 ,  C10M2201/0413 ,  C30B29/02 ,  C30B29/64 ,  C30B33/00 ,  H01B1/04

Abstract: Embodiments described herein relate generally to large scale synthesis of thinned graphite and in particular, few layers of graphene sheets and graphene-graphite composites. In some embodiments, a method for producing thinned crystalline graphite from precursor crystalline graphite using wet ball milling processes is disclosed herein. The method includes transferring crystalline graphite into a ball milling vessel that includes a grinding media. A first and a second solvent are transferred into the ball milling vessel and the ball milling vessel is rotated to cause the shearing of layers of the crystalline graphite to produce thinned crystalline graphite.

Abstract translation: 本文所述的实施方案一般涉及薄型石墨的大规模合成，特别是石墨烯片和石墨烯 - 石墨复合材料的层数较少。 在一些实施方案中，本文公开了一种使用湿球磨工艺从前体晶体石墨制备薄化晶体石墨的方法。 该方法包括将结晶石墨转移到包括研磨介质的球磨容器中。 将第一和第二溶剂转移到球磨容器中，并且使球磨容器旋转以使晶体石墨层的剪切产生变薄的结晶石墨。

公开(公告)号：WO2014157192A1

公开(公告)日：2014-10-02

申请号：PCT/JP2014/058265

申请日：2014-03-25

Applicant: 大豊工業株式会社

Inventor： 和田　仁志

IPC: F16C33/12 ,  C22C9/02 ,  C30B7/12 ,  C30B29/02 ,  F16C17/02 ,  F16C33/14

CPC classification number: F16C33/122 ,  B32B15/01 ,  C22C9/02 ,  C22C12/00 ,  C30B7/12 ,  C30B19/103 ,  C30B29/02 ,  C30B30/02 ,  F16C17/02 ,  F16C33/12 ,  F16C33/14 ,  F16C2202/04 ,  F16C2204/10 ,  F16C2204/36 ,  F16C2223/30

Abstract: 【課題】軟質層の密着性を向上させる技術を提供する。 【解決手段】本発明の摺動部材およびすべり軸受は、マトリクス中に、前記マトリクスよりも軟らかい軟質材料で構成される軟質粒子が析出した基層と、前記軟質粒子と同一の軟質材料によって前記基層の表面上に形成された軟質層と、を備える。前記軟質層は、前記軟質粒子から前記軟質材料がエピタキシャル成長したエピタキシャル成長部を含む。

Abstract translation: [问题]提供可以增加软层的附着力的技术。 [解决方案]该滑动构件和滑动轴承设置有：基底层，使得在基体中由软质材料构成的软质颗粒已经沉淀; 以及通过与软质颗粒相同的软材料在基层的表面上形成的软层。 软层包含由来自软颗粒的软材料的外延生长产生的外延生长部分。

公开(公告)号：WO2014046447A1

公开(公告)日：2014-03-27

申请号：PCT/KR2013/008381

申请日：2013-09-17

Applicant: 부산대학교 산학협력단

Inventor： 정세영 ,  김지영 ,  조용찬 ,  박상언 ,  조채용

IPC: C30B29/52 ,  C30B29/02 ,  C30B15/00

CPC classification number: C30B29/52 ,  C22C5/08 ,  C30B15/00 ,  C30B29/02

Abstract: 본 발명은 금속 원자가 치환된 금속 단결정에 관한 것으로, A 금속원소에 상기 A 금속원소와는 다른 금속원소인 B를 도핑하여 A 1-X B X 물질을 형성시키고, 이를 고온용융법을 이용하여 혼합 단결정을 형성시키되, A 금속은 은, 구리, 백금, 금 중 하나의 원소가 되고, B 금속은 은, 구리, 백금, 금 중 하나의 원소가 되며, x는 0.01≤x≤0.09이 되는 금속 원자가 치환된 금속 단결정을 기술적 요지로 한다. 이에 따라, 전기적 성질이 우수한 금속에 이와는 다른 종류의 금속원소를 도핑하여 혼합결정으로 성장시킴에 의해 원래의 금속보다 전기적 성질이 우수한 혼합 결정인 금속 단결정이 형성된다는 이점이 있다.

Abstract translation: 本发明涉及金属元素被取代的金属单晶，其中金属元素A掺杂有与金属元素A不同的金属元素B以形成A1-XBX，并且由此形成混合单晶，由此由 高温熔融（其中金属元素A是银，铜，铂和金中的任何一种;金属元素B是银，铜，铂和金中的任一种;0.01≤x≤0.09）。 因此，通过用与金属不同的金属元素掺杂具有优异电性能的金属，形成具有比常规金属更优异的电性能的混合晶体的金属单晶，并将掺杂金属生长成混晶 。

公开(公告)号：WO2013028826A3

公开(公告)日：2013-04-18

申请号：PCT/US2012051998

申请日：2012-08-23

Applicant: WISCONSIN ALUMNI RES FOUND ,  ARNOLD MICHAEL S ,  GOPALAN PADMA ,  SAFRON NATHANIEL S ,  KIM MYUNGWOONG

Inventor： ARNOLD MICHAEL S ,  GOPALAN PADMA ,  SAFRON NATHANIEL S ,  KIM MYUNGWOONG

IPC: C01B31/02 ,  B82B3/00 ,  C01B31/04 ,  C30B29/02 ,  H01L21/02

CPC classification number: C30B25/04 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  C01B2204/02 ,  C01B2204/04 ,  C30B29/02 ,  H01L21/02425 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02664 ,  H01L29/1606

Abstract: Methods for growing microstructured and nanostructured graphene by growing the microstructured and nanostructured graphene from the bottom-up directly in the desired pattern are provided. The graphene structures can be grown via chemical vapor deposition (CVD) on substrates that are partially covered by a patterned graphene growth barrier which guides the growth of the graphene.

Abstract translation: 提供了通过自下而上直接以期望的图案生长微结构化和纳米结构化石墨烯来生长微结构化和纳米结构化石墨烯的方法。 石墨烯结构可以通过化学气相沉积（CVD）在被引导石墨烯生长的图案化石墨烯生长屏障部分覆盖的衬底上生长。