公开(公告)号：WO2009064010A1

公开(公告)日：2009-05-22

申请号：PCT/JP2008/070967

申请日：2008-11-12

Applicant: SHOWA DENKO K.K. ,  SATO, Takashi ,  TAKAHASHI, Hiroshi ,  SHIMAZU, Yoshitomo ,  ITOH, Yuji

Inventor： SATO, Takashi ,  TAKAHASHI, Hiroshi ,  SHIMAZU, Yoshitomo ,  ITOH, Yuji

IPC: C09G1/02 ,  H01L21/321

CPC classification number: C09G1/02 ,  C09K3/1463 ,  C23F3/04 ,  H01L21/3212

Abstract: The present invention provides a polishing composition for polishing copper or copper alloy, comprising: an oxidizing agent (A); at least one acids (B) selected from amino acids, carboxylic acids of 8 or less carbon atoms, or inorganic acids; a sulfonic acid (C) having an alkyl group of 8 or more carbon atoms; a fatty acid (D) having an alkyl group of 8 or more carbon atoms; and an N-substituted imidazole (E) represented by the following general formula (1). (In the formula (1), Ra, Rb, and Rc represent H or an alkyl group of 1 to 4 carbon atoms, and Rd represents a group selected from the group consisting of a benzyl group, a vinyl group, an alkyl group of 1 to 4 carbon atoms, and a group in which a portion of H of these groups has been substituted with OH or NH 2 .)

Abstract translation: 本发明提供一种用于抛光铜或铜合金的抛光组合物，包括：氧化剂（A）; 至少一种选自氨基酸的酸（B），8个或更少碳原子的羧酸或无机酸; 具有8个或更多个碳原子的烷基的磺酸（C）; 具有8个以上碳原子的烷基的脂肪酸（D） 和由以下通式（1）表示的N-取代咪唑（E）。 （式（1）中，Ra，Rb，Rc表示H或碳原子数1〜4的烷基，Rd表示选自苄基，乙烯基，乙烯基， 1〜4个碳原子的基团，以及这些基团的一部分H被OH或NH 2取代的基团。

公开(公告)号：WO2008145480A1

公开(公告)日：2008-12-04

申请号：PCT/EP2008/055476

申请日：2008-05-05

Applicant: EVONIK DEGUSSA GMBH ,  KRÖLL, Michael ,  HEBERER, Stefan ,  DAUTH, Katharina

Inventor： KRÖLL, Michael ,  HEBERER, Stefan ,  DAUTH, Katharina

IPC: C09G1/02 ,  H01L21/321 ,  C09K3/14 ,  B24D3/00

CPC classification number: C09G1/02 ,  C09K3/1409 ,  C09K3/1463

Abstract: A dispersion comprising particles of cerium oxide and sheet silicate and one or more aminocarboxylic acids and/or salts thereof, where the zeta potential of sheet silicate particles is negative and that of the cerium oxide particles is positive or equal to zero, and the zeta potential of the dispersion is negative overall, the mean diameter of the • cerium oxide particles is not more than 200 nm • sheet silicate particles is less than 100 nm, the content, based in each case on the total amount of the dispersion, of • cerium oxide particles is from 0.1 to 5% by weight • sheet silicate particles is from 0.01 to 10% by weight and • aminocarboxylic acid or salt thereof is from 0.01 to 5% by weight and the pH of the dispersion is from 7.5 to 10.5.

Abstract translation: 包含氧化铈和硅酸铝颗粒和一种或多种氨基羧酸和/或其盐的分散体，其中硅酸铝颗粒的ζ电位为负，氧化铈颗粒的ζ电位为正或等于零，ζ电位 的分散体为阴性，氧化铈粒子的平均粒径为200nm以下，硅酸铝粒子小于100nm，以氧化铈粒子为基准，以每种情况为基准，分散体的总量为 0.1至5重量％的硅酸盐颗粒为0.01至10重量％，氨基羧酸或其盐为0.01至5重量％，分散体的pH为7.5至10.5。

公开(公告)号：WO2008125638A1

公开(公告)日：2008-10-23

申请号：PCT/EP2008/054443

申请日：2008-04-11

Applicant: SOLVAY (SOCIETE ANONYME) ,  BOSSE, Jürgen ,  ALESSIO, Rocco ,  DOBSON, Steve ,  BELT, Heinz-Joachim

Inventor： BOSSE, Jürgen ,  ALESSIO, Rocco ,  DOBSON, Steve ,  BELT, Heinz-Joachim

IPC: H01L21/321 ,  H01L21/02 ,  H01L21/311

CPC classification number: C11D3/3945 ,  C09G1/02 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/31133 ,  H01L21/3212

Abstract: The present invention relates to the use of at least one oxidant, selected from peracids, in compositions for the processing of semiconductor wafers, in particular for t he cleaning and chemical mechanical polishing of semiconductor wafers. The present invention also relates to the use of a composition and composition therefore. The use of the oxidants of the invention leads to a good efficacy while limiting/avoiding the c orrosion of the substrate.

Abstract translation: 本发明涉及至少一种选自过酸的氧化剂在组合物中用于半导体晶片加工的用途，特别是用于半导体晶片的清洗和化学机械抛光。 因此，本发明还涉及组合物和组合物的用途。 本发明的氧化剂的使用导致良好的功效，同时限制/避免了底物的腐蚀。

公开(公告)号：WO2008072207A1

公开(公告)日：2008-06-19

申请号：PCT/IB2007/055098

申请日：2007-12-13

Applicant: L'AIR LIQUIDE-SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE ,  DONIAT, François ,  FISHER, Matthew L. ,  ZDUNEK, Alan D. ,  BARAJAS, Alejandro A. ,  SUNI, Ian ,  CHU, Xiangfeng ,  TRIPATHI, Abhinaz ,  LI, Yuzhuo

Inventor： DONIAT, François ,  FISHER, Matthew L. ,  ZDUNEK, Alan D. ,  BARAJAS, Alejandro A. ,  SUNI, Ian ,  CHU, Xiangfeng ,  TRIPATHI, Abhinaz ,  LI, Yuzhuo

IPC: C09G1/00 ,  H01L21/321

CPC classification number: C09G1/02 ,  C25F3/30 ,  H01L21/32125

Abstract: Compositions and methods suitable for the electrochemical mechanical planarization of a conductive material layer on a semiconductor workpiece. Compositions contain a phosphonic acid based electrolyte, a corrosion inhibitor, a chelating agent, a pH adjusting agent, and a solvent as the remainder.

Abstract translation: 适用于半导体工件上导电材料层的电化学机械平面化的组合物和方法。 组合物含有基于膦酸的电解质，腐蚀抑制剂，螯合剂，pH调节剂和作为其余的溶剂。

公开(公告)号：WO2007030368A3

公开(公告)日：2007-11-15

申请号：PCT/US2006033859

申请日：2006-08-30

Applicant: AMBERWAVE SYSTEMS CORP ,  CURRIE MATTHEW T ,  LOCHTEFELD ANTHONY J ,  CHENG ZHIYUAN ,  LANGDO THOMAS A

Inventor： CURRIE MATTHEW T ,  LOCHTEFELD ANTHONY J ,  CHENG ZHIYUAN ,  LANGDO THOMAS A

IPC: H01L21/762 ,  H01L21/20 ,  H01L21/321 ,  H01L21/8238 ,  H01L27/12 ,  H01L29/06

CPC classification number: H01L21/76254 ,  H01L21/823807 ,  H01L21/823878 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/165 ,  H01L29/205 ,  H01L29/267 ,  H01L29/7843

Abstract: Monolithic lattice-mismatched semiconductor heterostructures and methods for forming the same, such as by bonding patterned substrates with alternative active-area materials formed thereon to a rigid dielectric platform and then removing the highly- defective interface areas along with the underlying substrates to produce alternative active- area regions disposed over the insulator and substantially exhausted of misfit and threading dislocations.

Abstract translation: 单晶晶格不匹配的半导体异质结构及其形成方法，例如通过将形成在其上的替代活性区域材料的图案化衬底粘合到刚性介电平台上，然后与底层衬底一起除去高缺陷界面区域，以产生替代活性 - 设置在绝缘体上的区域区域，并且基本上耗尽了错配和穿线位错。

公开(公告)号：WO2007038399A2

公开(公告)日：2007-04-05

申请号：PCT/US2006037197

申请日：2006-09-25

Applicant: CABOT MICROELECTRONICS CORP

Inventor： CARTER PHILLIP ,  LI SHOUTIAN

IPC: C09G1/02 ,  H01L21/321

CPC classification number: H01L21/3212 ,  C09G1/02

Abstract: The invention provides compositions and methods for planarizing or polishing a metal surface. The composition comprises an abrasive, cesium ions, and a liquid carrier comprising water.

Abstract translation: 本发明提供了用于平坦化或抛光金属表面的组合物和方法。 组合物包含研磨剂，铯离子和包含水的液体载体。

公开(公告)号：WO2007003221A1

公开(公告)日：2007-01-11

申请号：PCT/EP2005/008204

申请日：2005-06-30

Applicant: FREESCALE SEMICONDUCTOR, INC. ,  SMITH, Bradley

Inventor： SMITH, Bradley

IPC: H01L21/3105 ,  H01L21/321

CPC classification number: H01L21/3212 ,  H01L21/31053

Abstract: A Chemical Mechanical Polishing (CMP) process receives a pre­treated wafer (20), the pre-treated wafer (20) having an abrasive-containing sacrificial layer (26) disposed thereon. During polishing using the CMP process, the abrasive­containing sacrificial layer (26) is broken-down to release abrasive that is used to abrade a surface (22) of the wafer (20).

Abstract translation: 化学机械抛光（CMP）工艺接收预处理的晶片（20），预处理的晶片（20）具有设置在其上的含磨料的牺牲层（26）。 在使用CMP工艺的抛光期间，含磨料的牺牲层（26）被分解以释放用于磨蚀晶片（20）的表面（22）的磨料。

公开(公告)号：WO2006124321A2

公开(公告)日：2006-11-23

申请号：PCT/US2006/017294

申请日：2006-05-02

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  KEVWITCH, Robert

Inventor： KEVWITCH, Robert

IPC: G03F7/42 ,  H01L21/3105 ,  H01L21/306 ,  H01L21/321

CPC classification number: H01L21/0206 ,  G03F7/427 ,  H01L21/02071

Abstract: During the processing of substrates (105), the substrate surface may be subjected to a cleaning process using supercritical CO 2 . Surface matter may remain, for example, because it is only minimally soluble in the supercritical CO 2 . For example, an oxidation cleaning process causes the substrate structure (105) to cleave at several points leaving smaller fragments of oxidized residue behind. This residue has only minimal solubility in supercritical CO 2 due to the polar constituents resulting from oxidation. The method thus further includes processing the substrate (105) with supercritical CO 2 and a functionalizing agent that can react with the smaller fragments and/or other less soluble components. These functionalized components are rendered more soluble in supercritical CO 2 and are more easily removed than their predecessors.

Abstract translation: 在处理基板（105）期间，可以使用超临界CO 2 2对基板表面进行清洁处理。 例如，表面物质可以保留，因为它仅在极限可溶于超临界CO 2 2中。 例如，氧化清洁过程使得底物结构（105）在几个点处裂开，留下较小的氧化残余物碎片。 由于由氧化产生的极性成分，该残余物在超临界CO 2 2中仅具有最小的溶解度。 因此，该方法还包括用超临界CO 2处理衬底（105）和可以与较小碎片和/或其它较不溶的组分反应的官能化剂。 这些官能化组分在超临界CO 2中更易溶解，并且比其前辈更容易除去。

公开(公告)号：WO2006071475A3

公开(公告)日：2006-08-31

申请号：PCT/US2005044135

申请日：2005-12-07

Applicant: 3M INNOVATIVE PROPERTIES CO

Inventor： RUEB CHRISTOPHER J ,  WEBB RICHARD J ,  VELAMAKANNI BHASKAR V

IPC: C09G1/02 ,  H01L21/321

CPC classification number: C09G1/04 ,  H01L21/31053

Abstract: A wafer polishing solution and method for polishing a wafer comprising an amino acid and calcium ions or barium ions. The wafer polishing solution can be adjusted to control cut rate and selectivity for modifying semiconductor wafers using a fixed abrasive CMP process.

Abstract translation: 一种用于抛光包含氨基酸和钙离子或钡离子的晶片的晶片抛光溶液和方法。 可以调整晶片抛光溶液以控制使用固定的研磨CMP工艺来修改半导体晶片的切割速率和选择性。

公开(公告)号：WO2006089291A1

公开(公告)日：2006-08-24

申请号：PCT/US2006/006168

申请日：2006-02-21

Applicant: NEOPAD TECHNOLOGIES CORPORATION ,  DEOPURA, Manish ,  ROY, Pradip, K.

Inventor： DEOPURA, Manish ,  ROY, Pradip, K.

IPC: B24B37/04 ,  B24B49/12 ,  H01L21/66 ,  H01L21/321 ,  H01L21/3105

CPC classification number: B24B37/013 ,  B24B49/12 ,  B24D7/12

Abstract: Systems and methods for the determination of the end point in a chemical mechanical polishing process are described. The method involves the use of a luminescent indicator that is selectively affected by a material released from a substrate being polished. The luminescence of the indicator is monitored across the substrate surface to assess the content of the surface in determining the desired polishing end point.

Abstract translation: 描述了用于确定化学机械抛光工艺中的终点的系统和方法。 该方法包括使用选择性地受从被抛光的基底释放的材料的影响的发光指示器。 在衬底表面上监测指示剂的发光，以在确定所需的抛光终点时评估表面的含量。