公开(公告)号：WO2016046645A1

公开(公告)日：2016-03-31

申请号：PCT/IB2015/002077

申请日：2015-09-25

Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： HAN, Yu ,  HUANG, Jianfeng ,  ZHU, Yihan

IPC: C30B7/14 ,  B82Y30/00 ,  B82Y40/00 ,  C30B29/02 ,  C30B29/60 ,  G01N21/65

CPC classification number: C30B7/14 ,  B82Y30/00 ,  B82Y40/00 ,  C03B29/02 ,  C30B29/02 ,  C30B29/60 ,  G01N21/658

Abstract: The fabrication of asymmetric monometallic nanocrystals with novel properties for plasmonics, nanophotonics and nanoelectronics. Asymmetric monometallic plasmonic nanocrystals are of both fundamental synthetic challenge and practical significance. In an example, a thiol-ligand mediated growth strategy that enables the synthesis of unprecedented Au Nanorod-Au Nanoparticle (AuNR-AuNP) dimers from pre-synthesized AuNR seeds. Using high-resolution electron microscopy and tomography, crystal structure and three-dimensional morphology of the dimer, as well as the growth pathway of the AuNP on the AuNR seed, was investigated for this example. The dimer exhibits an extraordinary broadband optical extinction spectrum spanning the UV, visible, and near infrared regions (300 - 1300 nm). This unexpected property makes the AuNR-AuNP dimer example useful for many nanophotonic applications. In two experiments, the dimer example was tested as a surface- enhanced Raman scattering (SERS) substrate and a solar light harvester for photothermal conversion, in comparison with the mixture of AuNR and AuNP. In the SERS experiment, the dimer example showed an enhancement factor about 10 times higher than that of the mixture, when the excitation wavelength (660 nm) was off the two surface plasmon resonance (SPR) bands of the mixture. In the photothermal conversion experiment under simulated sunlight illumination, the dimer example exhibited an energy conversion efficiency about 1.4 times as high as that of the mixture.

Abstract translation: 制备具有等离子体激元，纳米光子学和纳米电子学新特性的不对称单金属纳米晶体。 不对称单金属等离子体纳米晶体是基本的综合挑战和实践意义。 在一个实例中，硫醇 - 配体介导的生长策略使得能够从预合成的AuNR种子合成前所未有的Au Nanorod-Au纳米粒子（AuNR-AuNP）二聚体。 在这个例子中，使用高分辨率电子显微镜和断层扫描，研究了二者的晶体结构和三维形貌，以及AuNP在AuNR种子上的生长途径。 二聚体表现出跨越UV，可见光和近红外区域（300 - 1300 nm）的非凡宽带光学消光光谱。 这种意想不到的性质使得AuNR-AuNP二聚体实例对于许多纳米光子应用是有用的。 在两个实验中，与AuNR和AuNP的混合物相比，将二聚体实例作为表面增强拉曼散射（SERS）衬底和用于光热转换的太阳光收集器进行了测试。 在SERS实验中，当激发波长（660nm）离开混合物的两个表面等离子体共振（SPR）条带时，二聚体实例显示比混合物高约10倍的增强因子。 在模拟阳光照射下的光热转化实验中，二聚体实例显示出能量转换效率约为混合物的1.4倍。

公开(公告)号：WO2014000108A1

公开(公告)日：2014-01-03

申请号：PCT/CA2013/050503

申请日：2013-06-27

Applicant: THE ROYAL INSTITUTION FOR THE ADVANCEMENT OF LEARNING/MCGILL UNIVERSITY

Inventor： MEUNIER, Jean-Luc ,  BERK, Dimitrios ,  VASILICA PRISTAVITA, Ramona ,  BINNY, Dustin ,  MENDOZA GONZALEZ, Norma-Yadira ,  PASCONE, Pierre-alexandre

IPC: C01B31/04 ,  C08J5/22 ,  C30B29/02 ,  C30B31/06 ,  H01M8/10

CPC classification number: C08J5/22 ,  C01B32/184 ,  C01B32/194 ,  C01B2204/04 ,  C01B2204/30 ,  C30B23/00 ,  C30B29/02 ,  H01M4/90 ,  H01M4/9008 ,  H01M4/9083 ,  H01M2008/1095

Abstract: A pure and crystalline single-crystal nitrogen-functionalized graphene nano-flake powder comprising from 2 atomic % to at least 35 atomic % of total functionalized nitrogen within the graphene nano-flakes is disclosed. As well, the method of producing the nano-flakes that comprises injecting a carbon source into a thermal plasma system, dissociating the carbon source into carbon atomic species, transporting the carbon atomic species through a controlled nucleation zone to produce a crystalline graphene nano-flake structure, injecting the nitrogen source into the thermal plasma system dissociating the nitrogen source into nitrogen active species, and transporting the nitrogen atomic species to contact the crystalline graphene nano-flakes to produce the crystalline nitrogen-functionalized graphene nano-flakes is also disclosed. Finally, a multilayer composite comprising a carbon substrate and a layer of crystalline nitrogen- functionalized graphene nano-flakes is also described.

Abstract translation: 公开了一种包含石墨烯纳米薄片内总官能化氮的2原子％至至少35原子％的纯和晶体单晶氮官能化石墨烯纳米薄片粉末。 同样，制备纳米薄片的方法包括将碳源注入热等离子体系统中，将碳源解离成碳原子物质，将碳原子物质转移通过控制成核区域以产生结晶石墨烯纳米薄片 结构，将氮源注入到将氮源分解成氮活性物质的热等离子体系统中，并且传输氮原子物质以接触晶体石墨烯纳米薄片以产生结晶氮官能化石墨烯纳米薄片。 最后，还描述了包含碳底物和晶体氮官能化石墨烯纳米薄片层的多层复合材料。

公开(公告)号：WO2012171486A1

公开(公告)日：2012-12-20

申请号：PCT/CN2012/077015

申请日：2012-06-15

Applicant: ZHEJIANG KECHUANG ADVANCED MATERIALS CO., LTD ,  JIANG, Qingkui ,  CHANG, Zhenyu ,  DING, Jianbao

Inventor： JIANG, Qingkui ,  CHANG, Zhenyu ,  DING, Jianbao

IPC: B22F9/24 ,  C30B29/02 ,  C30B29/62 ,  C22B11/00

CPC classification number: B22F9/24 ,  B22F1/0025 ,  B82Y30/00 ,  B82Y40/00 ,  C30B7/14 ,  C30B29/02 ,  C30B29/60

Abstract: Disclosed is a method suitable for efficiently producing silver nanowires with high aspect ratio. In this method, silver nanowires with aspect ratio of more than 300 and purity of more than 80% are produced through an acid compound mediated microwave-assisted wet chemistry method. Such silver nanowires are especially suitable for the application in the flexible transparent electrodes, as they can simultaneously improve the electrical conductivity and transparency.

Abstract translation: 公开了一种适用于高效率生产具有高纵横比的银纳米线的方法。 在该方法中，通过酸化合物介导的微波辅助湿法化学方法制备长径比大于300且纯度大于80％的银纳米线。 这种银纳米线特别适用于柔性透明电极中的应用，因为它们可以同时提高导电性和透明度。

公开(公告)号：WO2011095731A1

公开(公告)日：2011-08-11

申请号：PCT/FR2011/050181

申请日：2011-01-28

Applicant: INSTITUT NATIONAL DES SCIENCES APPLIQUEES DE TOULOUSE ,  CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (C.N.R.S.) ,  UNIVERSITE PAUL SABATIER TOULOUSE III ,  RESPAUD, Marc ,  BLON, Thomas ,  LIAKAKOS, Nikolaos ,  SOULANTIKA, Aikaterini ,  CHAUDRET, Bruno ,  BENAMARA, Omar ,  SNOECK, Etienne

Inventor： RESPAUD, Marc ,  BLON, Thomas ,  LIAKAKOS, Nikolaos ,  SOULANTIKA, Aikaterini ,  CHAUDRET, Bruno ,  BENAMARA, Omar ,  SNOECK, Etienne

IPC: C30B7/14 ,  C30B29/02 ,  C30B29/60 ,  C30B7/00 ,  B22F9/24

CPC classification number: C30B7/005 ,  B22F1/0025 ,  B22F9/26 ,  B22F2301/15 ,  B22F2303/01 ,  B82Y30/00 ,  C30B7/14 ,  C30B29/02 ,  C30B29/60

Abstract: L'invention concerne un procédé de fabrication de nano-bâtonnets (2) de cobalt solide épitaxiés sur un support (5) solide, dans lequel : on immerge dans une solution métallique comprenant au moins un composé précurseur de cobalt à une concentration initiale dans un milieu solvant liquide, au moins une portion (8) de surface du support (5) solide, ladite portion (8) de surface étant formée de platine solide cristallin, on maintient lors d'une étape de croissance, ladite solution métallique avec le support (5) au repos dans un réacteur sous pression et dans des conditions aptes à permettre une croissance spontanée par épitaxie des nano-bâtonnets (2) de cobalt à partir de la(des)dite(s) portion(s) (8) de surface libre de platine dudit support (5).

Abstract translation: 本发明涉及一种在固体基质（5）上形成的固体钴纳米棒（2）的制造方法，其中：固体基质（5）的至少一个表面部分（8）浸入至少包括至少 一种化合物，其是在液体溶剂介质中具有初始浓度的钴的前体，所述表面部分（8）由结晶固体铂制成; 在生长步骤期间，将所述金属溶液保持在衬底（5）处于加压反应室中并且适于允许通过从所述无铂表面部分（8）外延生长钴纳米棒（2）的自发生长的条件下 ）。

公开(公告)号：WO2011071857A1

公开(公告)日：2011-06-16

申请号：PCT/US2010/059201

申请日：2010-12-07

Applicant: CORNING INCORPORATED ,  MAZUMDER, Prantik ,  SUMAN, Balram ,  COOK, Glen, B. ,  VENKATARAMAN, Natesan

Inventor： MAZUMDER, Prantik ,  SUMAN, Balram ,  COOK, Glen, B. ,  VENKATARAMAN, Natesan

IPC: C30B11/00 ,  C30B29/64 ,  H01L31/18 ,  H01L21/02 ,  C30B29/02 ,  C30B29/06 ,  C30B29/16 ,  C30B29/42 ,  C30B29/52 ,  C30B29/08

CPC classification number: C30B29/64 ,  C30B11/003 ,  C30B29/02 ,  C30B29/06 ,  C30B29/08 ,  C30B29/16 ,  C30B29/42 ,  C30B29/52 ,  H01L21/02532 ,  H01L21/02667 ,  H01L31/182 ,  H01L31/1872 ,  Y02E10/546 ,  Y02P70/521

Abstract: Methods for making and/or treating articles of semiconducting material are disclosed. In various methods, a first article of semiconducting material is provided, the first article of semiconducting material is heated sufficiently to melt the semiconducting material, and the melted semiconducting material is solidified in a direction substantially parallel to a shortest dimension of the melted article of semiconducting material. Articles of semiconducting materials made by methods described herein are also disclosed.

Abstract translation: 公开了制备和/或处理半导体材料制品的方法。 在各种方法中，提供了半导体材料的第一制品，第一半导体材料被充分加热以熔化半导体材料，并且熔化的半导体材料在基本平行于熔融半导体制品的最短尺寸的方向上固化 材料。 还公开了通过本文所述方法制备的半导体材料制品。

公开(公告)号：WO2011031483A3

公开(公告)日：2011-05-12

申请号：PCT/US2010046643

申请日：2010-08-25

Applicant: CAMBRIOS TECHNOLOGIES CORP ,  SEPA JELENA ,  BHATIA RIMPLE ,  WALLACE FRANK

Inventor： SEPA JELENA ,  BHATIA RIMPLE ,  WALLACE FRANK

IPC: B22F9/24 ,  B22F1/00 ,  C30B7/14 ,  C30B29/02 ,  C30B29/60

CPC classification number: B22F9/16 ,  B22F1/0025 ,  B22F9/24 ,  B22F2999/00 ,  B82Y30/00 ,  B22F2201/02 ,  B22F2201/10

Abstract: Described herein are methods of controlling metal nanowire morphologies by adjusting the reaction conditions of a polyol synthesis. In particular, by purging the reaction with an inert gas, batch-to-batch consistency can be achieved.

Abstract translation: 本文描述了通过调节多元醇合成的反应条件来控制金属纳米线形态的方法。 特别地，通过用惰性气体吹扫反应，可以实现批次间的一致性。

公开(公告)号：WO2010043716A3

公开(公告)日：2010-06-24

申请号：PCT/EP2009063617

申请日：2009-10-16

Applicant: ECOLE POLYTECH ,  CENTRE NAT RECH SCIENT ,  BARATON LAURENT ,  COJOCARU COSTEL-SORIN ,  PRIBAT DIDIER

Inventor： BARATON LAURENT ,  COJOCARU COSTEL-SORIN ,  PRIBAT DIDIER

IPC: C23C16/02 ,  C23C16/26 ,  C23C16/56 ,  C30B25/02 ,  C30B25/18 ,  C30B29/00 ,  C30B29/02

CPC classification number: C23C16/26 ,  C23C16/0281 ,  C23C16/56 ,  C30B25/02 ,  C30B29/02

Abstract: The invention relates to a method for the controlled growth of a graphene film, characterised in that said method comprises the following steps: forming, at the surface of a substrate (S1), a layer of a metal having a phase diagram with carbon such that, beyond a threshold ratio of molar concentration CM/CM+CC, with CM being the molar concentration of the metal in the metal/carbon mixture and CC being the molar concentration of carbon in said mixture, a solid homogenous composition can be obtained; exposing the metal layer to a controlled flow of carbon atoms or carbon radicals or carbon ions at a temperature such that the resultant molar concentration ratio is higher than the threshold ratio in order to obtain a solid solution of the carbon in the metal; an operation for modifying the phase of the mixture into two phases of metal and graphite, thus leading to the formation of at least one lower graphene film (31) at the interface of the metal layer including carbon atoms and the substrate, and the formation of an upper graphene film (30) at the surface of the metal layer.

Abstract translation: 本发明涉及一种用于石墨烯膜的受控生长的方法，其特征在于所述方法包括以下步骤：在基底（S1）的表面上形成具有碳的相图的金属层，使得 ，超过CM / CM + CC摩尔浓度的阈值比率，其中CM是金属/碳混合物中金属的摩尔浓度，CC是所述混合物中碳的摩尔浓度，可以获得固体均质组合物; 在一定温度下使金属层暴露于受控的碳原子或碳自由基或碳离子流中，使得所得摩尔浓度比高于阈值比以获得碳在金属中的固溶体; 用于将混合物的相改变成金属和石墨两相的操作，由此导致在包括碳原子和基板的金属层的界面处形成至少一个下石墨烯膜（31），并且形成 在金属层的表面处的上石墨烯膜（30）。

公开(公告)号：WO2007006268A1

公开(公告)日：2007-01-18

申请号：PCT/DE2006/001159

申请日：2006-07-05

Applicant: FORSCHUNGSZENTRUM JÜLICH GMBH ,  VOIGTLÄNDER, Bert ,  LINKE, Udo ,  STOLLWERK, Helmut

Inventor： VOIGTLÄNDER, Bert ,  LINKE, Udo ,  STOLLWERK, Helmut

IPC: C30B13/00 ,  C30B29/60 ,  C30B29/02 ,  C30B29/52

CPC classification number: C30B13/22 ,  C30B11/00 ,  C30B13/00 ,  C30B29/607 ,  Y10T428/12014

Abstract: Die Erfindung betrifft ein Verfahren zur Herstellung eines Bead-Einkristalls. Der Bead-Einkristall wird durch Elektronenstrahlheizen mindestens eines Drahtes im Vakuum geformt . Vorteilhaft werden auf diese Weise Bead-Einkristalle umfassend Ag, Al, Cr, Cu, Ir, Mo, Nb, Ni, Pd, Pt, Re, Rh, Ru, Ta, W oder umfassend Metalllegierungen, insbesondere umfassend Ag/Au-, Pt/Rh- oder Pt/Re- Legierungen, bereit gestellt. Die Bead-Einkristalle werden vorzugsweise in der Oberflächenforschung, der Dünnschichttechnik und in der Elektrochemie verwendet.

Abstract translation: 本发明涉及一种制备珠粒的单晶的方法。 胎圈单晶是通过在真空中电子束加热的至少一个线形成。 珠单晶是通过这种方式，包括银，铝，铜，铬，铱，钼，铌，镍，钯，铂，铼，铑，钌，钽，钨或包括金属合金是有利的，特别是包括银/金，铂 /铑或Pt /重新合金提供。 胎圈单晶优选在表面科学，薄膜技术和电化学使用。

公开(公告)号：WO2005065425A3

公开(公告)日：2006-07-27

申请号：PCT/US2004044089

申请日：2004-12-29

Applicant: UNIV CALIFORNIA ,  LIN LIWEI ,  ENGLANDER ONGI ,  CHRISTENSEN DANE

Inventor： LIN LIWEI ,  ENGLANDER ONGI ,  CHRISTENSEN DANE

IPC: B82B1/00 ,  B82B3/00 ,  C01B31/02 ,  C01B33/02 ,  C23C16/02 ,  C23C16/24 ,  C23C16/26 ,  C23C16/44 ,  C30B23/04 ,  C30B23/06 ,  C30B29/02 ,  C30B29/06 ,  H01L21/20 ,  H01L29/00 ,  H01L51/00

CPC classification number: H01L21/02532 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B33/02 ,  C01B2202/34 ,  C01B2202/36 ,  C23C16/0281 ,  C23C16/24 ,  C23C16/26 ,  H01L21/02381 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02645 ,  H01L21/02653 ,  H01L51/0002 ,  H01L51/0048 ,  H01L51/0052

Abstract: Sytems and methods for local synthesis of silicon nanowires and carbon nanotubes, as well as electric field (28) assisted self­assembly of silicon nanowires and carbon nanotubes, are described. By employing localized heating in the growth of the nanowire or nanotubes(36), the structures can be systhesized on a device in a room temperature chamber(12) with out the device being subjected to overall heating. The method is localized and selective and provides for a suspended microstrucutre to achieve the thermal requirement for vapor deposition sysnthesis (16), while the remainder of the chip or substrate (40) remains at room temperature. Furthermore, by employing electric field assisted self-assembly techniques according to the present invention, itis not necessary to grow the nanotubes and nanowires and spearately cnnect them to a device. Instead, the present invetion provides for self-assembly of the nanotubes and nanowires onthe devices themselves, thus providing for nano- to micro- integration.

Abstract translation: 描述了用于硅纳米线和碳纳米管的局部合成的系统和方法以及硅纳米线和碳纳米管的电场（28）辅助自组装。 通过在纳米线或纳米管（36）的生长中采用局部加热，可以在室温室（12）中的装置上对该结构进行结合，该装置经受整体加热。 该方法是局部和选择性的，并且提供悬浮的微结构以实现气相沉积系统的热需求（16），而芯片或衬底（40）的其余部分保持在室温。 此外，通过采用根据本发明的电场辅助自组装技术，不需要使纳米管和纳米线生长，并且将它们直接连接到器件上。 相反，本发明提供了纳米管和纳米线在装置本身上的自组装，从而提供纳米到微集成。

公开(公告)号：WO2005099934A3

公开(公告)日：2006-03-16

申请号：PCT/DE2005000694

申请日：2005-04-12

Applicant: HAHN MEITNER INST BERLIN GMBH ,  MECKLENBURG ARNO ,  FIECHTER SEBASTIAN ,  NABEIN HANS-PETER ,  SCHNEIDER RAINER PETER

Inventor： MECKLENBURG ARNO ,  FIECHTER SEBASTIAN ,  NABEIN HANS-PETER ,  SCHNEIDER RAINER PETER

IPC: C22B9/18 ,  C22B23/06 ,  C30B9/00 ,  C30B11/00 ,  C30B29/02 ,  C30B29/52 ,  C22B9/187

CPC classification number: C30B11/00 ,  C22B9/18 ,  C22B23/06 ,  C30B9/00 ,  C30B29/02 ,  C30B29/52

Abstract: On production of Ni-Mn-Ga single crystals, the fusion of the pure metal in arc furnaces is known, whereupon significant amounts of manganese are lost due to the high partial pressure thereof. The solidified metal is then fused and crystallised in a Bridgman or Czochralski method. During this process the manganese is also lost. A further disadvantage of the known method is the formation of pores and occlusions. This problem is conventionally resolved by the use of repeated fusion. The aim of the invention is a simple method and an arrangement for crystal growth from fused metals or fused solutions and crystallisation by conventional methods, permitting the production of larger, purer, pore- and occlusion-free single crystals from metals and intermetallic compounds and alloys. Said aim is achieved for the method for crystal growth from fused metals or fused solutions and crystallisation with the crystallisation occurring by controlled solidification, whereby the fused metal or used solution is brought into contact with a slag-forming flux and completely enclosed by the same. The metal phase is purified by dissolution of impurities in the slag. Also due to the complete enclosure, a contact between the fused metal or fused solution and the crucible is prevented and the evaporation of volatile components of the fused metal or fused solution reduced. The method is suitable for the crystal growth of numerous metals, inter-metallic compounds and alloys, in particular for the production of single crystal aircraft turbine blades with particularly low sulphur concentrations in the blades.

Abstract translation: 在Ni-Mn基 - 镓 - 单晶的制造中，公知的是在熔融电弧炉的纯金属，其中在锰的量显著锰损失的高蒸气压的，因为。 随后，将凝固的金属被熔化并在布里奇曼或切克劳斯基工艺结晶。 在这个过程中也步锰丢失。 已知方法的另一缺点是孔隙和夹杂物的形成。 这个问题已经遇到反复融化。 它是通过已知的方法，其允许生产金属和金属间化合物和合金的大，纯的，无孔的和无夹杂物单晶生长由熔融金属或熔融的解决方案和结晶的结晶的简单方法和设备。 在用于从熔融金属或熔融的解决方案和结晶，其中结晶是通过定向凝固进行晶体生长的方法，该目的的实现在于该金属熔化或熔化的溶液用造渣剂接触接触并通过它完全包围。 通过在熔渣杂质解决金属相被清洁。 另外，坩埚之间的接触和熔化或防止金属熔液，并防止该金属熔化或熔融液的挥发性成分的蒸发通过完全封闭。 该方法适合用于生长大量的金属，金属间化合物和合金的晶体，尤其是用于生产单晶飞机涡轮机叶片在所述叶片极低硫浓度。