Abstract:
Films that can be useful in large area gap fill applications, such as in the formation of advanced 3D NAND devices, involve processing a semiconductor substrate by depositing on a patterned semiconductor substrate a doped silicon oxide film a doped silicon oxide film configured to expand upon annealing at a temperature above the films glass transition temperature, and annealing the doped silicon oxide film to a temperature above the film glass transition temperature. In some embodiments, reflow of the film may occur. The composition and processing conditions of the doped silicon oxide film may be tailored so that the film exhibits substantially zero as-deposited stress and substantially zero stress shift post-anneal.
Abstract:
Etching a refractory metal or other high surface binding energy material on a substrate can maintain or increase the smoothness of the metal/high EO surface, in some cases produce extreme smoothing. A substrate having an exposed refractory metal/high EO surface is provided. The refractory metal/high EO surface is exposed to a modification gas to modify the surface and form a modified refractory metal/high EO surface. The modified refractory metal/high EO surface is exposed to an energetic particle to preferentially remove the modified refractory metal/high EO surface relative to an underlying unmodified refractory metal/high EO surface such that the exposed refractory metal/high EO surface after removing the modified refractory metal/high EO surface is as smooth or smoother than the substrate surface before exposing the substrate surface to the modification gas.
Abstract:
Efficient integrated sequential deposition of alternating layers of dielectric and conductor, for example oxide/metal or metal nitride, e.g., SiO 2 /TiN, in a single tool, and even in a single process chamber enhances throughput without compromising quality when directly depositing a OMOM stack with many layers. Conductor and dielectric film deposition of a stack of at least 20 conductor/dielectric film pairs in the same processing tool or chamber, without breaking vacuum between the film depositions, such that there is no substantial cross-contamination between the conductor and dielectric film depositions, can be achieved.
Abstract:
A standalone lithium ion-conductive solid electrolyte including a freestanding inorganic vitreous sheet of sulfide-based lithium ion conducting glass is capable of high performance in a lithium metal battery by providing a high degree of lithium ion conductivity while being highly resistant to the initiation and/or propagation of lithium dendrites. Such an electrolyte is also itself manufacturable, and readily adaptable for battery cell and cell component manufacture, in a cost-effective, scalable manner.
Abstract:
A method for the ultraviolet (UV) treatment of carbon-containing low-k dielectric and associated apparatus enables process induced damage repair. The methods of the invention are particularly applicable in the context of damascene processing to recover lost low-k property of a dielectric damaged during processing, either pre-metallization, post-planarization, or both. UV treatments can include an exposure of the subject low-k dielectric to a constrained UV spectral profile and/or chemical silylating agent, or both.
Abstract:
A power-loss-inhibiting current-collector. The power-loss-inhibiting current-collector includes a trace for collecting current from a solar cell. The power-loss-inhibiting current-collector further includes a current-limiting portion of the power-loss-inhibiting current-collector. The current-limiting portion of the power-loss-inhibiting current-collector is coupled to the trace. The current-limiting portion of the power-loss-inhibiting current-collector is configured to regulate current flow through the power-loss-inhibiting current-collector.
Abstract:
Structured LED devices and component structures with improved efficiency and reduced defects are enabled by the use of micro- or nano-structured features that reduce lattice strain and improve p-doping in inorganic LEDs, and facilitate carrier injection and recombination of OLEDs. The nanostructures can also confine current flow and provide internal light guiding to enhance efficiency and thereby improve device performance.
Abstract:
Li/air battery cells are configurable to achieve very high energy density. The cells include a protected a lithium metal or alloy anode and an aqueous catholyte in a cathode compartment. In addition to the aqueous catholyte, components of the cathode compartment include an air cathode (e.g., oxygen electrode) and a variety of other possible elements.
Abstract:
Layered structures and associated fabrication methods that serve as the foundation for preparing high-operating-temperature electrochemical cells have a porous ceramic layer and a porous metal support or current collector layer bonded by mechanical interlocking which is provided by interpenetration of the layers and/or roughness of the metal surface. The porous layers can be infiltrated with catalytic material to produce a functioning electrochemical electrode.
Abstract:
Non-aqueous alkali metal (e.g., Li)/oxygen battery cells constructed with a protected anode that minimizes anode degradation and maximizes cathode performance by enabling the use of cathode performance enhancing solvents in the catholyte have negligible self-discharge and high deliverable capacity. In particular, protected lithium-oxygen batteries with non-aqueous catholytes have this improved performance.