EXPANDABLE DOPED OXIDE FILMS FOR ADVANCED SEMICONDUCTOR APPLICATIONS

    公开(公告)号:WO2021225774A1

    公开(公告)日:2021-11-11

    申请号:PCT/US2021/028028

    申请日:2021-04-19

    Inventor: BAYATI, Reza

    Abstract: Films that can be useful in large area gap fill applications, such as in the formation of advanced 3D NAND devices, involve processing a semiconductor substrate by depositing on a patterned semiconductor substrate a doped silicon oxide film a doped silicon oxide film configured to expand upon annealing at a temperature above the films glass transition temperature, and annealing the doped silicon oxide film to a temperature above the film glass transition temperature. In some embodiments, reflow of the film may occur. The composition and processing conditions of the doped silicon oxide film may be tailored so that the film exhibits substantially zero as-deposited stress and substantially zero stress shift post-anneal.

    CARBON CONTAINING LOW-K DIELECTRIC CONSTANT RECOVERY USING UV TREATMENT
    5.
    发明申请
    CARBON CONTAINING LOW-K DIELECTRIC CONSTANT RECOVERY USING UV TREATMENT 审中-公开
    含有紫外线处理的含有低K介电常数恢复的碳

    公开(公告)号:WO2012087620A2

    公开(公告)日:2012-06-28

    申请号:PCT/US2011/064246

    申请日:2011-12-09

    Abstract: A method for the ultraviolet (UV) treatment of carbon-containing low-k dielectric and associated apparatus enables process induced damage repair. The methods of the invention are particularly applicable in the context of damascene processing to recover lost low-k property of a dielectric damaged during processing, either pre-metallization, post-planarization, or both. UV treatments can include an exposure of the subject low-k dielectric to a constrained UV spectral profile and/or chemical silylating agent, or both.

    Abstract translation: 一种用于含碳低k电介质和相关设备的紫外(UV)处理方法使得能够进行过程诱导的损伤修复。 本发明的方法特别适用于在加工期间损坏的电介质,预金属化,后平面化或两者中损耗的损耗的低k特性的镶嵌加工的背景。 紫外线治疗可以包括受试者低k电介质暴露于约束的紫外光谱分布和/或化学甲硅烷基化试剂,或两者。

    MICRO- AND NANO-STRUCTURED LED AND OLED DEVICES
    7.
    发明申请
    MICRO- AND NANO-STRUCTURED LED AND OLED DEVICES 审中-公开
    微米和纳米结构的LED和OLED器件

    公开(公告)号:WO2010011858A2

    公开(公告)日:2010-01-28

    申请号:PCT/US2009/051574

    申请日:2009-07-23

    Inventor: MAO, Samuel, S.

    CPC classification number: H01L33/18 B82Y20/00

    Abstract: Structured LED devices and component structures with improved efficiency and reduced defects are enabled by the use of micro- or nano-structured features that reduce lattice strain and improve p-doping in inorganic LEDs, and facilitate carrier injection and recombination of OLEDs. The nanostructures can also confine current flow and provide internal light guiding to enhance efficiency and thereby improve device performance.

    Abstract translation: 通过使用微结构特征或纳米结构特征来减少晶格应变并改善无机LED中的p掺杂并促进载流子注入,从而实现具有改进的效率和减少的缺陷的结构化LED器件和组件结构 和OLED的重组。 纳米结构还可以限制电流并提供内部光导,以提高效率,从而提高器件性能。

Patent Agency Ranking