公开(公告)号：WO2010075125A1

公开(公告)日：2010-07-01

申请号：PCT/US2009/068180

申请日：2009-12-16

Applicant: RAYTHEON COMPANY ,  KORENSTEIN, Ralph ,  BERNSTEIN, Steven, D. ,  PEREIRA, Stephen, J.

Inventor： KORENSTEIN, Ralph ,  BERNSTEIN, Steven, D. ,  PEREIRA, Stephen, J.

IPC: H01L29/778 ,  H01L29/16 ,  H01L29/267 ,  H01L21/335

CPC classification number: H01L29/7786 ,  H01L21/02389 ,  H01L21/02527 ,  H01L21/0262 ,  H01L29/1602 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/66431 ,  H01L29/66462

Abstract: In one aspect, a method includes fabricating a device. The device includes a gallium nitride (GaN) layer, a diamond layer disposed on the GaN layer and a gate structure disposed in contact with the GaN layer and the diamond layer. In another aspect, a device includes a gallium nitride (GaN) layer, a diamond layer disposed on the GaN layer and a gate structure disposed in contact with the GaN layer and the diamond layer.

Abstract translation: 一方面，一种方法包括制造装置。 该器件包括氮化镓（GaN）层，设置在GaN层上的金刚石层和与GaN层和金刚石层接触设置的栅极结构。 在另一方面，一种器件包括氮化镓（GaN）层，设置在GaN层上的金刚石层和与GaN层和金刚石层接触设置的栅极结构。

公开(公告)号：WO2008057193A1

公开(公告)日：2008-05-15

申请号：PCT/US2007/022325

申请日：2007-10-19

Applicant: RAYTHEON COMPANY ,  LAROCHE, Jeffrey, R. ,  HOKE, William, E. ,  BERNSTEIN, Steven, D. ,  KORENSTEIN, Ralph

Inventor： LAROCHE, Jeffrey, R. ,  HOKE, William, E. ,  BERNSTEIN, Steven, D. ,  KORENSTEIN, Ralph

IPC: H01L29/267 ,  H01L29/778

CPC classification number: C04B35/583 ,  C04B35/581 ,  H01L29/045 ,  H01L29/1602 ,  H01L29/242 ,  H01L29/267 ,  H01L29/365 ,  H01L29/7782 ,  H01L29/7787

Abstract: A heterostructire having a heteroj unction comprising: a diamond layer; and a boron aluminum nitride (B(X)A1(|.X)N) layer disposed in contact with a surface of the diamond layer, where x is between 0 and 1.

Abstract translation: 具有异质结构的异质结构包括：金刚石层; 和与金刚石层的表面接触设置的氮化铝硼（B（X）A1（| .X）N）层，其中x在0和1之间。

公开(公告)号：WO2010075124A1

公开(公告)日：2010-07-01

申请号：PCT/US2009/068178

申请日：2009-12-16

Applicant: RAYTHEON COMPANY ,  KORENSTEIN, Ralph ,  BERNSTEIN, Steven, D. ,  PEREIRA, Stephen, J.

Inventor： KORENSTEIN, Ralph ,  BERNSTEIN, Steven, D. ,  PEREIRA, Stephen, J.

IPC: H01L21/335 ,  H01L29/267 ,  H01L29/778 ,  H01L29/16

CPC classification number: H01L29/7786 ,  H01L21/02389 ,  H01L21/0245 ,  H01L21/02527 ,  H01L21/0262 ,  H01L29/1602 ,  H01L29/267 ,  H01L29/66431 ,  H01L29/66462

Abstract: In one aspect, a method includes fabricating a gallium nitride (GaN) layer with a first diamond layer having a first thermal conductivity and a second diamond layer having a second thermal conductivity greater than the first thermal conductivity. The fabricating includes using a microwave plasma chemical vapor deposition (CVD) process to deposit the second diamond layer onto the first diamond layer.

Abstract translation: 一方面，一种方法包括用具有第一导热性的第一金刚石层和具有大于第一导热率的第二热导率的第二金刚石层来制造氮化镓（GaN）层。 该制造包括使用微波等离子体化学气相沉积（CVD）工艺将第二金刚石层沉积到第一金刚石层上。

公开(公告)号：WO2011017136A1

公开(公告)日：2011-02-10

申请号：PCT/US2010/043455

申请日：2010-07-28

Applicant: RAYTHEON COMPANY ,  ALTMAN, David, H. ,  NORDHAUSEN, Erik, F. ,  BERNSTEIN, Steven, D. ,  MOLFINO, Robert, P. ,  WAKEFIELD, Steven, B.

Inventor： ALTMAN, David, H. ,  NORDHAUSEN, Erik, F. ,  BERNSTEIN, Steven, D. ,  MOLFINO, Robert, P. ,  WAKEFIELD, Steven, B.

IPC: H01L23/373 ,  H01L23/433

CPC classification number: H01L23/373 ,  H01L23/3733 ,  H01L23/3737 ,  H01L23/433 ,  H01L2924/0002 ,  Y10S977/72 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/832 ,  Y10T428/25 ,  Y10T428/2918 ,  Y10T428/2938 ,  Y10T428/2958 ,  H01L2924/00

Abstract: A structure, comprising: a semiconductor structure having an electrically and thermally conductive layer disposed on one surface of the semiconductor structure; an electrically and thermally conductive heat sink; an electrically and thermally conductive carrier layer; a plurality of electrically and thermally nano-tubes, a first portion of the plurality of nano-tubes having proximal ends disposed on a first surface of the carrier layer and a second portion of the plurality of nano-tubes having proximal ends disposed on an opposite surface of the carrier layer; and a plurality of electrically and thermally conductive heat conductive tips disposed on distal ends of the plurality of nano-tubes, the heat conductive tips on the first portion of the plurality of nano-tubes being attached to the conductive layer, the of heat conductive tips on the second portion of the plurality of nano-tubes being attached to the heat sink.

Abstract translation: 一种结构，包括：半导体结构，其具有设置在所述半导体结构的一个表面上的导电和导热层; 电导热导电散热器; 导热载体层; 多个电和热纳米管，所述多个纳米管的第一部分具有设置在所述载体层的第一表面上的近端和所述多个纳米管的第二部分，所述多个纳米管的近端设置在相对的位置上 载体层表面; 以及设置在所述多个纳米管的远端上的多个导热导热末端，所述多个纳米管的所述第一部分上的所述导热末端附着于所述导电层，所述导热尖端 在多个纳米管的第二部分上连接到散热器。