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    BOOKING SYSTEM
    1.
    发明申请
    BOOKING SYSTEM 审中-公开
    预订系统

    公开(公告)号：WO2018044226A1

    公开(公告)日：2018-03-08

    申请号：PCT/SG2016/000014

    申请日：2016-08-31

    Applicant: CHUA, Soo Jin

    Inventor： CHUA, Soo Jin

    IPC: G06Q10/02

    CPC classification number: G06Q10/02 ,  G06Q10/00 ,  G06Q10/10

    Abstract: An activity booking system including at least one processing device that receives a booking enquiry from a user client device via a communications network, determines an availability of one or more activity time slots using an activity schedule, provides a booking availability indication to the client device, the booking availability indication being indicative of at least one available time slot, the client device being responsive to the booking availability indication to display an indication of the at least one available time slot determine user selection of at least one available time slot in accordance with user input commands and generate a booking request indicative of a selected available time slot, the processing device receiving the booking request from the user client device and selectively modifying the activity schedule in accordance with the booking request to thereby book the time slot for the user.

    Abstract translation: 包括至少一个处理设备的活动预订系统，所述至少一个处理设备经由通信网络从用户客户端设备接收预订查询，使用活动时间表确定一个或多个活动时间段的可用性，向客户端设备提供预订可用性指示， 所述预订可用性指示指示至少一个可用时隙，所述客户端设备响应于所述预订可用性指示来显示对所述至少一个可用时隙的指示，所述至少一个可用时隙的指示根据用户确定用户对至少一个可用时隙的选择 输入命令并且产生指示所选可用时隙的预订请求，所述处理设备从所述用户客户端设备接收所述预订请求，并且根据所述预订请求选择性地修改所述活动时间表，从而为所述用户预订所述时隙。

    METHOD OF ZINC OXIDE FILM GROWN ON THE EPITAXIAL LATERAL OVERGROWTH GALLIUM NITRIDE TEMPLATE
    4.
    发明申请
    METHOD OF ZINC OXIDE FILM GROWN ON THE EPITAXIAL LATERAL OVERGROWTH GALLIUM NITRIDE TEMPLATE 审中-公开
    在外延横向过度生长氮化镓模板上生长的氧化锌膜的方法

    公开(公告)号：WO2007123496A8

    公开(公告)日：2007-12-06

    申请号：PCT/SG2007000117

    申请日：2007-04-25

    Applicant: UNIV SINGAPORE ,  CHUA SOO JIN ,  ZHOU HAILONG ,  LIN JIANYI ,  PAN HUI

    Inventor： CHUA SOO JIN ,  ZHOU HAILONG ,  LIN JIANYI ,  PAN HUI

    IPC: H01L21/00 ,  H01L33/00

    CPC classification number: H01L33/0087 ,  C30B25/02 ,  C30B25/18 ,  C30B29/16 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/02554 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02647

    Abstract: A growth method is proposed for high quality zinc oxide comprising the following steps: (1) growing a gallium nitride layer on a sapphire substrate around a temperature of 1000 0 C; (2) patterning a SiO 2 mask into stripes oriented in the gallium nitride or direction; (3) growing epitaxial lateral overgrowth of (ELO) gallium nitride layers by controlling the facet planes via choosing the growth temperature and the reactor; (4) depositing zinc oxide films on facets ELO gallium nitride templates by chemical vapor deposition (CVD). Zinc oxide crystal of high quality with a reduced number of crystal defects can be grown on a gallium nitride template. This method can be used to fabricate zinc oxide films with low dislocation density lower than 10 4 /cm -2 , which will find important applications in future electronic and optoelectronic devices.

    Abstract translation: 提出了一种用于高质量氧化锌的生长方法，其包括以下步骤：（1）在温度约为1000℃的蓝宝石衬底上生长氮化镓层; （2）将SiO 2掩模图案化成在氮化镓<111,100>或<1120>方向取向的条纹; （3）通过选择生长温度和反应器控制刻面平面，生长（ELO）氮化镓层的外延横向过度生长; （4）通过化学气相沉积（CVD）在刻面ELO氮化镓模板上沉积氧化锌膜。 可以在氮化镓模板上生长具有减少的晶体缺陷数的高质量的氧化锌晶体。 该方法可用于制造低位错密度低于10 4 / cm 2 / cm 2的氧化锌膜，这将在未来的电子和光电子器件中找到重要的应用。

    ORGANIC LIGHT EMITTING DIODE (OLED)
    5.
    发明申请
    ORGANIC LIGHT EMITTING DIODE (OLED) 审中-公开
    有机发光二极管（OLED）

    公开(公告)号：WO03047317A8

    公开(公告)日：2003-10-23

    申请号：PCT/SG0200276

    申请日：2002-11-27

    Applicant: INST MATERIALS RESEARCH & ENG ,  UNIV SINGAPORE ,  KE LIN ,  RAMADAS SENTHIL KUMAR ,  CHUA SOO JIN

    Inventor： KE LIN ,  RAMADAS SENTHIL KUMAR ,  CHUA SOO JIN

    IPC: H05B33/22 ,  H01L51/50 ,  H01L51/52 ,  H05B33/04 ,  H01L51/20

    CPC classification number: H01L51/5253 ,  H01L51/5221 ,  Y10S428/917

    Abstract: An Organic Light Emitting Diode (OLED) which is adapted to inhibit the formation and growth of non-emissive areas known as "dark spots". The OLED comprises an anode (3) disposed on a substrate (2), a cathode (8), an electroluminescent (EL) layer (6) disposed between the anode (3) and the cathode (8) and a hole transport layer (5) disposed between the anode (3) and the EL layer (6). The OLED has a number of oxygen/moisture barriers (4, 7) disposed between one or more of the OLED's layers. These barriers (4, 7) are made from an organic polymer and are adapted to resist permeation by oxygen and moisture and inhibit metal migration.

    Abstract translation: 有机发光二极管（OLED），其适于抑制被称为“黑点”的非发射区域的形成和生长。 OLED包括设置在衬底（2）上的阳极（3），阴极（8），设置在阳极（3）和阴极（8）之间的电致发光（EL）层（6）以及空穴传输层 5）设置在阳极（3）和EL层（6）之间。 OLED具有设置在一个或多个OLED层之间的多个氧气/湿气阻挡层（4,7）。 这些屏障（4,7）由有机聚合物制成，适用于阻止氧气和湿气的渗透并抑制金属迁移。

    DUAL BAND INFRARED DETECTOR USING STEP MULTIQUANTUM WELLS WITH SUPERLATTICE BARRIERS
    6.
    发明申请
    DUAL BAND INFRARED DETECTOR USING STEP MULTIQUANTUM WELLS WITH SUPERLATTICE BARRIERS 审中-公开
    双波段红外探测器使用步进多槽壁超格阵列

    公开(公告)号：WO9917341A3

    公开(公告)日：1999-11-04

    申请号：PCT/SG9800075

    申请日：1998-09-25

    Applicant: UNIV SINGAPORE ,  KARUNASIRI GAMANI ,  CHUA SOO JIN

    Inventor： KARUNASIRI GAMANI ,  CHUA SOO-JIN

    IPC: H01L31/0352 ,  H01L31/101 ,  H01L27/14

    CPC classification number: B82Y20/00 ,  H01L31/035236 ,  H01L31/101

    Abstract: An infrared detector uses step quantum wells with superlattice barriers for dual-band detection. The step quantum wells are designed to have two bound states and a continuum above the superlattice barriers. The bound-to-bound and bound-to-continuum transitions are employed for the dual-band detection. The superlattice barriers are used to extract the photocurrent from the bound-to-bound transition with a relatively low external electric field while suppressing the thermionic emission, resulting in a smaller dark current. The photocurrent is tuneable by adjusting the energy level in the step well relative to the miniband by an external bias. Stark shifts of the energy levels in the quantum well allow for discrimination of the photocurrents due to BM and BC transitions.

    Abstract translation: 红外探测器使用具有超晶格障碍的阶梯量子阱用于双波段检测。 台阶量子阱被设计成具有两个束缚态和超晶格势垒之上的连续体。 双频段检测采用了束缚束缚和束缚束连续变换。 超晶格势垒用于在相对较低的外部电场下从边界到边界的跃迁中提取光电流，同时抑制热电子发射，导致更小的暗电流。 光电流是可调的，通过调整相对于微型棒的台阶中的能量水平，通过外部偏置。 量子阱中能级的Stark位移允许区分由BM和BC跃迁引起的光电流。

    FABRICATION OF PHOSPHOR FREE RED AND WHITE NITRIDE-BASED LEDS
    8.
    发明申请
    FABRICATION OF PHOSPHOR FREE RED AND WHITE NITRIDE-BASED LEDS 审中-公开
    无磷红磷和白光LED的制造

    公开(公告)号：WO2009048425A1

    公开(公告)日：2009-04-16

    申请号：PCT/SG2007/000350

    申请日：2007-10-12

    Applicant: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH ,  SOH, Chew Beng ,  CHUA, Soo Jin ,  LIU, Wei ,  TENG, Jing Hua

    Inventor： SOH, Chew Beng ,  CHUA, Soo Jin ,  LIU, Wei ,  TENG, Jing Hua

    IPC: H01L33/00 ,  H01L27/15 ,  H01L29/15

    CPC classification number: H01L33/06 ,  H01L27/153 ,  H01L33/08 ,  H01L33/32

    Abstract: A multiple quantum well (MQW) structure for a light emitting diode and a method for fabricating a MQW structure for a light emitting diode are provided. The MQW structure comprises a plurality of quantum well structures, each quantum well structure comprising: a barrier layer; and a well layer having quantum dot nanostructures embedded therein formed on the barrier layer, the barrier and the well layer comprising a first metal-nitride based material; wherein at least one of the quantum well structures further comprises a capping layer formed on the well layer, the capping layer comprising a second metal-nitride based material having a different metal element compared to the first metal-nitride based material.

    Abstract translation: 提供了用于发光二极管的多量子阱（MQW）结构和用于制造用于发光二极管的MQW结构的方法。 MQW结构包括多个量子阱结构，每个量子阱结构包括：阻挡层; 以及在所述阻挡层上形成有嵌入其中的量子点纳米结构的阱层，所述势垒层和所述阱层包含第一金属氮化物基材料; 其中所述量子阱结构中的至少一个还包括形成在所述阱层上的覆盖层，所述覆盖层包含与所述第一金属氮化物基材料相比具有不同金属元素的第二金属氮化物基材料。

    GROUP III NITRIDE WHITE LIGHT EMITTING DIODE
    9.
    发明申请
    GROUP III NITRIDE WHITE LIGHT EMITTING DIODE 审中-公开
    第III组氮化物白光发光二极管

    公开(公告)号：WO2006101452A1

    公开(公告)日：2006-09-28

    申请号：PCT/SG2005/000099

    申请日：2005-03-24

    Applicant: Agency for Science, Technology and Research ,  SUMITOMO ELECTRIC INDUSTRIES LTD ,  CHUA, Soo Jin ,  CHEN, Peng ,  TAKASUKA, Eiryo

    Inventor： CHUA, Soo Jin ,  CHEN, Peng ,  TAKASUKA, Eiryo

    IPC: H01L33/00

    CPC classification number: H01L33/06 ,  B82Y10/00 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/32

    Abstract: A white light-emitting diode is fabricated by metal organic chemical vapor deposition (MOCVD), which can produce a broad band emission covering all the visible range in the spectrum by capping the Indium nitride (InN) and Indium-rich Indium Gallium Nitride (InGaN) quantum dots (QDs) in single or multiple In x Ga 1-x N/In y Ga 1-y N quantum wells (QWs) by introducing bursts of at least one of Trimethylindium (TMIn), Triethylindium (TEIn) and Ethyldimethylindium (EDMIn), which serve as nuclei for the growth of QDs in QWs. The diode can thus radiate white light ranging form 400nm to 750nm by adjusting the In burst parameters.

    Abstract translation: 通过金属有机化学气相沉积（MOCVD）制造白色发光二极管，其可以通过封装氮化铟（InN）和富铟铟铟氮化物（InGaN）来产生覆盖光谱中所有可见光范围的宽带发射 ）量子点（QD）在单个或多个In x Ga 1-x N / In x Ga 1-y < 通过引入三甲基铟（TMIn），三乙基（TEIn）和乙基二甲基铟（EDMIn））中的至少一种的突发，其用作QW中QD生长的核子。 因此，通过调整In突发参数，二极管可以辐射400nm至750nm范围内的白光。

    METHOD FOR FORMING A MODIFIED SEMICONDUCTOR HAVING A PLURALITY OF BAND GAPS
    10.
    发明申请
    METHOD FOR FORMING A MODIFIED SEMICONDUCTOR HAVING A PLURALITY OF BAND GAPS 审中-公开
    用于形成具有多重条纹GAPS的改性半导体的方法

    公开(公告)号：WO03085742A8

    公开(公告)日：2004-07-15

    申请号：PCT/SG0300074

    申请日：2003-04-04

    Applicant: AGENCY SCIENCE TECH & RES ,  UNIV SINGAPORE ,  TENG JING HUA ,  CHUA SOO JIN ,  DONG JIAN RONG

    Inventor： TENG JING HUA ,  CHUA SOO JIN ,  DONG JIAN RONG

    IPC: H01L21/18 ,  H01L29/12 ,  H01L33/00 ,  H01S5/10 ,  H01S5/16 ,  H01S5/40 ,  H01L29/15 ,  H01S5/34

    CPC classification number: B82Y10/00 ,  B82Y20/00 ,  H01L21/182 ,  H01L29/122 ,  H01L29/125 ,  H01L29/127 ,  H01L33/0095 ,  H01S5/1003 ,  H01S5/1092 ,  H01S5/162 ,  H01S5/3412 ,  H01S5/3414 ,  H01S5/4087

    Abstract: A method for forming a modified semiconductor having a number of band gaps. The first step involves providing a semiconductor having a surface and a quantum region which emits photons in response to electrical or optical stimulation, the quantum region having an original band gap and being disposed under the surface. The next step involves applying a number of layers of a number of materials to a number of selected regions of the surface, the materials being adapted to cause, upon thermal annealing, a number of different degrees of intermixing in a number of portions of the quantum region disposed immediately below each of the selected regions of the surface. The layers of materials can be applied in a dot or line pattern, or both, to increase the plurality of band gap tuning. The next step involves thermally annealing the layers to the surface such that the layers cause a number of degrees of intermixing in the different portions of said quantum region thereby shifting the original band gaps of those portions. These steps result in a modified semiconductor which exhibits a number of different band gaps in a number of portions of the quantum region depending upon the positioning of the layers of materials on the surface immediately above the respective portions of the quantum region.

    Abstract translation: 一种形成具有多个带隙的改性半导体的方法。 第一步涉及提供具有响应于电或光刺激而发射光子的表面和量子区的半导体，该量子区具有原始带隙并且被布置在该表面下。 下一个步骤包括将多个材料层施加到表面的多个选定区域，该材料适于在热退火时引起数量的多个部分中的多种不同程度的混合 该区域紧邻在该表面的每个选定区域的下方。 可以以点或线图案或两者来施加材料层以增加多个带隙调谐。 下一步骤涉及将层热层退火到表面，使得这些层在所述量子区域的不同部分中引起数个程度的混合，从而移动这些部分的原始带隙。 这些步骤导致修改的半导体，其取决于材料层在紧邻量子区域的相应部分上方的表面上的位置，在量子区的多个部分中显示出许多不同的带隙。

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