公开(公告)号：WO2003081307A1

公开(公告)日：2003-10-02

申请号：PCT/GB2003/001172

申请日：2003-03-19

Applicant: DENSELIGHT SEMICONDUCTORS PTE LTD. ,  FINNIE, Peter, John ,  LAM, Yee, Loy ,  CHA, Cher, Liang, Randall ,  CHOO, Lay, Cheng

Inventor： LAM, Yee, Loy ,  CHA, Cher, Liang, Randall ,  CHOO, Lay, Cheng

IPC: G02B6/122

CPC classification number: G02B6/02123 ,  G02B6/124

Abstract: A method of fabricating an accurately tuned grating structure in a waveguide comprises the steps of providing a waveguide having an etched Bragg grating formed in a photosensitive layer, guiding light into the waveguide, monitoring the Bragg wavelength, and exposing the photosensitive layer to tuning light so as to alter the refractive index of the photosensitive layer and thereby alter the Bragg wavelength of the waveguide. The grating is initially formed by e-beam lithography and dry etching, to provide a grating with relatively accurate periodicity. The Bragg wavelength of the grating is then fine tuned by exposing the photosensitive layer to UV light to adjust the effective refractive index whilst monitoring the optical spectrum of light reflected by the grating.

Abstract translation: 在波导中制造精确调谐的光栅结构的方法包括以下步骤：提供具有形成在感光层中的蚀刻布拉格光栅的波导，将光引导到波导中，监测布拉格波长，以及将感光层曝光到调谐光 以改变感光层的折射率，从而改变波导的布拉格波长。 光栅最初通过电子束光刻和干蚀刻形成，以提供具有相对精确周期的光栅。 然后通过将感光层暴露于UV光以调节有效折射率同时监测由光栅反射的光的光谱，来微调光栅的布拉格波长。

公开(公告)号：WO2003048853A3

公开(公告)日：2003-06-12

申请号：PCT/GB2002/005437

申请日：2002-12-02

Applicant: DENSELIGHT SEMICONDUCTORS PTE LTD ,  FINNIE, Peter, John

Inventor： LAM, Yee, Loy ,  NAKAMURA, Hiroshi ,  CHAN, Yuen, Chen

IPC: G02F1/225

Abstract: According to the present invention, a travelling-wave electroabsorption modulator (TW-EAM) comprises: an optical waveguide (10) with a plurality of adjacent regions electrically isolated from each other, the regions being characterized alternately by the properties of electroabsorption (EA) (13) and optical transparency (12) over the same range of optical wavelengths, and a microwave transmission line (15) located above the optical waveguide, such that sections of the transmission line located above EA regions in the optical waveguide are in electrical contact with said EA regions, whereas sections of the transmission line located above transparent regions in the optical waveguide are electrically isolated (18) from said transparent regions. In the absence of a microwave signal, the EA (13) regions are substantially transparent to light in the optical waveguide. When a microwave signal is applied to the EA regions, they become substantially absorbing at the wavelength of the light in the optical waveguide. Thus, by applying a fast time-varying microwave signal to the transmission line, the absorption of light in the waveguide can be modulated temporally, thereby encoding information onto the light beam.

公开(公告)号：WO2003048793A1

公开(公告)日：2003-06-12

申请号：PCT/GB2002/005306

申请日：2002-11-25

Applicant: DENSELIGHT SEMICONDUCTORS PTE LTD ,  FINNIE, Peter, John

Inventor： KUEH, Foo, Chai ,  LAM, Yee, Loy ,  TEO KIAN HIN, Victor

IPC: G01R31/26

CPC classification number: G01R31/2635 ,  G01R31/2642 ,  G01R31/2863

Abstract: In the present invention there is provided a burn-in system for burning in one or more optoelectronic devices comprising at least one burn-in printed circuit board (PCB). The, or each, burn-in PCB comprises a plurality of mounts for holding the, or each, optoelectronic device, a full population of traces for separate electrical connection to each electrical contact on the or each optoelectronic device, and a PCB connector having a plurality of contacts for external electrical connection to each trace on the burn-in PCB. The burn-in system also comprises a custom PCB. The custom PCB comprises a plurality of input connectors for connecting a plurality of electrical biasing sources to said custom PCB, a plurality of output connectors, each output connector adapted for mating with the PCB connector on a burn-in PCB, thereby providing for electrical connection between the custom PCB and the or each burn-in PCB, and a plurality of electrical routings for electrical connection between the input and output connectors, said routings being arranged so that, in use, the custom PCB connects at least one electrical biasing source to at least one electrical contact on the or each optoelectronic device. The present invention enhances the burn-in facility by providing flexability of electrical connection from various sources to burn-in mounts.

Abstract translation: 在本发明中，提供了一种用于在包括至少一个老化印刷电路板（PCB）的一个或多个光电子器件中燃烧的老化系统。 该或每个老化PCB包括用于保持或每个光电子器件的多个安装座，用于与该光电子器件上或每个光电子器件上的每个电触点分开的电连接的全部迹线组，以及具有 多个触点用于外部电连接到老化PCB上的每个迹线。 老化系统还包括定制PCB。 定制PCB包括用于将多个电偏压源连接到所述定制PCB的多个输入连接器，多个输出连接器，每个输出连接器适于与老化PCB上的PCB连接器配合，从而提供电连接 在定制PCB和每个老化PCB之间以及用于在输入和输出连接器之间电连接的多个电气布线，所述布线布置成使得在使用中，定制PCB将至少一个电偏压源连接到 在所述或每个光电子器件上的至少一个电接触。 本发明通过提供从各种电源到老化安装座的电连接的柔性来增强老化设备。

公开(公告)号：WO2003044841A3

公开(公告)日：2003-05-30

申请号：PCT/GB2002/005188

申请日：2002-11-19

Applicant: DENSELIGHT SEMICONDUCTORS PTE LTD. ,  FINNIE, Peter, John ,  TEO, Kian Hin, Victor ,  LIM, Hwi, Siong ,  LAM, Yee, Loy

Inventor： TEO, Kian Hin, Victor ,  LIM, Hwi, Siong ,  LAM, Yee, Loy

IPC: H01L21/302

Abstract: In the present invention, the boundary of the or each chip on a wafer is defined by the absence of metallization and the presence of a continuous etched trench. The metallization, comprising the deposition of a metal layer, is not formed monolithically on the wafer, but is patterned to cover only the surface of the or each chip, thereby providing for electrical contact to the chip. The metal layer so deposited, contributes to the structural integrity and mechanical strength of the chip, but does not form a mechanical link between neighbouring chips. The trenches are etched to a depth that is substantially below the surface topology of the wafer. In particular, the trenches are etched to a depth that is substantially below layers in the wafer that contribute to the operation of devices fabricated on the wafer. Typically this would mean at least 3µm into the wafer substrate below the active regions grown on the substrate.

公开(公告)号：WO2003041171A2

公开(公告)日：2003-05-15

申请号：PCT/GB2002/005024

申请日：2002-11-06

Applicant: DENSELIGHT SEMICONDUCTORS PTE LTD ,  FINNIE, Peter, John

Inventor： NAKAMURA, Hiroshi ,  ANG, Ting, Cheong ,  ANG, Kian, Siong ,  HALDER, Subrata ,  NG, Geok

IPC: H01L27/06

CPC classification number: H01L27/0605 ,  H01L21/8252

Abstract: In the present invention, a semiconductor device is formed which includes an MIM capacitor located on the upper surface of a heterostructure from which the emitter, base and collector sections of a nearby HBT are defined. In this way the capacitor and HBT share a substantially common structure, with the base and emitter electrodes of the HBT fashioned from the same metal layers as the upper and lower capacitor plates, respectively. Furthermore, as the insulator region of the capacitor is formed prior to definition of the HBT structure, the dielectric material used can be deposited by means of a plasma enhanced process, without damaging the HBT structure.

Abstract translation: 在本发明中，形成半导体器件，其包括位于异质结构的上表面上的MIM电容器，从其定义附近HBT的发射极，基极和集电极部分。 以这种方式，电容器和HBT分别具有基本上共同的结构，HBT的基极和发射极电极分别由与上，下电容器板相同的金属层制成。 此外，由于在定义HBT结构之前形成电容器的绝缘体区域，所以使用的电介质材料可以通过等离子体增强工艺沉积，而不会损坏HBT结构。

公开(公告)号：WO2003032037A1

公开(公告)日：2003-04-17

申请号：PCT/GB2002/004535

申请日：2002-10-07

Applicant: DENSELIGHT SEMICONDUCTORS PTE LTD. ,  FINNIE, Peter, John

Inventor： LAM, Yee, Loy ,  CHAN, Yuen, Chuen ,  NG, Seng, Lee ,  LIU, Jingang

IPC: G02B6/122

CPC classification number: H01S5/5009 ,  G02B6/12002 ,  G02B6/122 ,  H01S5/041 ,  H01S5/10 ,  H01S5/101 ,  H01S5/18

Abstract: There is provided an optical device (300) comprising a planar structure (304) adapted so that light coupled into an optical layer (306) of the device follows a folded optical path (302), thereby increasing the interaction length in the optical layer, wherein the optical device comprises reflection means designed so that the folded optical path crosses the optical layer substantially perpendicularly to said optical layer so as to render the optical device substantially polarization insensitive. Typically, the folded path is achieved by modifying at least one of an upper surface of the optical layer and a lower surface of the optical layer such that it is no longer planar, but instead comprises one or more angled facets (308).

Abstract translation: 提供了一种包括平面结构（304）的光学装置（300），其适于使得耦合到装置的光学层（306）中的光遵循折叠的光路（302），由此增加光学层中的相互作用长度， 其中所述光学装置包括反射装置，所述反射装置被设计成使得所述折叠光路基本垂直于所述光学层穿过所述光学层，以使所述光学装置基本上偏振不敏感。 通常，通过修改光学层的上表面和光学层的下表面中的至少一个使得其不再是平面的，而是包括一个或多个成角度的平面（308）来实现折叠路径。

公开(公告)号：WO03025649A2

公开(公告)日：2003-03-27

申请号：PCT/GB0204152

申请日：2002-09-12

Applicant: DENSELIGHT SEMICONDUCTORS PTE ,  LAM YEE LOY ,  TEO KIAN HIN VICTOR ,  FINNIE PETER JOHN

Inventor： LAM YEE LOY ,  TEO KIAN HIN VICTOR

IPC: G02B6/12 ,  G02B6/42

CPC classification number: G02B6/4201 ,  G02B6/4224 ,  G02B6/4232 ,  G02B6/4242 ,  G02B6/4271 ,  G02B2006/12195

Abstract: An optical coupling mount for use in coupling light between a semiconductor waveguide device and an optical fibre comprises a silica based spot size converter located on an optical bench with fiducial marks and protrusions, whereby the semiconductor device can be positioned in close alignment with the spot size converter. The spot size converter comprises a tapered upper waveguide located above a non-tapered lower waveguide. The dimensions of the spot size converter are such that a semiconductor device emitting a small, astigmatic optical beam can be efficiently coupled to a single mode fibre requiring a larger, concentric beam. Also provided is a thermal backplate with electrical routing patterns and which, when assembled with the optical bench, contact both the semiconductor device and corresponding electrical routing patterns on the optical bench, thereby providing a mechanically robust device with provision for simple connection to an external electrical power supply.

Abstract translation: 用于在半导体波导器件和光纤之间耦合光的光耦合器包括位于具有基准标记和突起的光学平台上的基于二氧化硅的光斑尺寸转换器，由此半导体器件可以与光斑尺寸紧密对准 转换器。 光斑尺寸转换器包括位于非锥形下波导上方的锥形上波导管。 点尺寸转换器的尺寸使得发射小的散光光束的半导体器件能够有效地耦合到需要较大同心光束的单模光纤。 还提供了具有电路径图案的热背板，并且当与光学台架组装时，与半导体器件和光学工作台上的相应电气布线图案接触，从而提供机械坚固的设备，其具有简单连接到外部电气 电源。

公开(公告)号：WO2004095662A3

公开(公告)日：2005-03-24

申请号：PCT/GB2004001727

申请日：2004-04-23

Applicant: DENSELIGHT SEMICONDUCTORS PTE ,  LAM YEE LOY ,  CHAN YUEN CHUEN ,  FINNIE PETER JOHN

Inventor： LAM YEE LOY ,  CHAN YUEN CHUEN

IPC: G02F1/017 ,  H01L21/18 ,  H01S5/00 ,  H01S5/026 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343 ,  H01S5/40

CPC classification number: H01L21/182 ,  B82Y20/00 ,  G02F1/01708 ,  H01S5/0264 ,  H01S5/0265 ,  H01S5/34 ,  H01S5/3414 ,  H01S5/4087

Abstract: A method for achieving large localized bandgap energy differences at the wafer-level scale, with fine bandgap control, through a combination of regrowth and quantum well intermixing processes. The technique allows fabrication of a photonic integrated circuit on a wafer, wherein epitaxial layers of different composition are formed on separate regions to optimise the associated energy bandgap at a different centre wavelength. Quantum well intermixing of those parts of the structure containing quantum wells allows localised fine tuning of the bandgap, either to correct for inaccuracies during deposition or growth, or intentionally to detune the bandgap to achieve a certain functionality such as greater transparency or responsivity.

Abstract translation: 通过再生长和量子阱混合过程的组合，通过精细的带隙控制，在晶圆级尺度上实现大的局部带隙能量差异的方法。 该技术允许在晶片上制造光子集成电路，其中不同组成的外延层形成在不同的区域上，以在不同的中心波长处优化相关联的能带隙。 包含量子阱的结构的这些部分的量子阱混合允许带隙的局部微调，以校正沉积或生长期间的不准确性，或有意地去除带隙以实现某些功能，例如更大的透明度或响应性。

公开(公告)号：WO2005012971A1

公开(公告)日：2005-02-10

申请号：PCT/GB2004/003309

申请日：2004-07-30

Applicant: DENSELIGHT SEMICONDUCTORS PTE LTD. ,  FINNIE, Peter, John ,  CHAN, Yuen, Chuen ,  NAKAMURA, Hiroshi

Inventor： CHAN, Yuen, Chuen ,  NAKAMURA, Hiroshi

IPC: G02B6/42

CPC classification number: G02B6/125 ,  G02B6/12007 ,  G02B6/124 ,  G02B2006/12128

Abstract: A photonic device (40) with improved optical isolation and a method to fabricate it. The device is grown on a substrate with a quantum well layer so as to be intentionally absorbing at a particular wavelength. Regions (41, 42, 44) of the device that are to be partially or wholly transparent to light at the particular wavelength, or capable of emission at the particular wavelength, are then bandgap engineered by post-growth quantum well intermixing to render them so. The non-QW intermixed regions (43) remain absorbing and so provide the required isolation at the particular wavelength. The QW intermixing may be tailored to provide a particular behaviour at other predetermined wavelengths.

Abstract translation: 具有改进的光隔离的光子器件（40）及其制造方法。 该器件在具有量子阱层的衬底上生长，以便在特定波长下有意吸收。 然后通过后生长量子阱混合对具有特定波长的光或能够在特定波长发射的部分或完全透明的器件的区域（41,42,44）进行带隙工程化，以使其成为 。 非QW混合区域（43）保持吸收，因此在特定波长处提供所需的隔离。 可以调整QW混合以在其它预定波长处提供特定的行为。

公开(公告)号：WO2004095662A2

公开(公告)日：2004-11-04

申请号：PCT/GB2004/001727

申请日：2004-04-23

Applicant: DENSELIGHT SEMICONDUCTORS PTE LTD ,  FINNIE, Peter, John ,  LAM, Yee, Loy ,  CHAN, Yuen, Chuen

Inventor： LAM, Yee, Loy ,  CHAN, Yuen, Chuen

IPC: H01S5/00

CPC classification number: H01L21/182 ,  B82Y20/00 ,  G02F1/01708 ,  H01S5/0264 ,  H01S5/0265 ,  H01S5/34 ,  H01S5/3414 ,  H01S5/4087

Abstract: A method for achieving large localized bandgap energy differences at the wafer-level scale, with fine bandgap control, through a combination of regrowth and quantum well intermixing processes. The technique allows fabrication of a photonic integrated circuit on a wafer, wherein epitaxial layers of different composition are formed on separate regions to optimise the associated energy bandgap at a different centre wavelength. Quantum well intermixing of those parts of the structure containing quantum wells allows localised fine tuning of the bandgap, either to correct for inaccuracies during deposition or growth, or intentionally to detune the bandgap to achieve a certain functionality such as greater transparency or responsivity.

Abstract translation: 通过再生长和量子阱混合过程的组合，通过精细的带隙控制，在晶圆级尺度上实现大的局部带隙能量差异的方法。 该技术允许在晶片上制造光子集成电路，其中不同组成的外延层形成在不同的区域上，以在不同的中心波长处优化相关联的能带隙。 包含量子阱的结构的这些部分的量子阱混合允许带隙的局部微调，以校正沉积或生长期间的不准确性，或有意地去除带隙以实现某些功能，例如更大的透明度或响应性。