Abstract:
An apparatus for dispensing a frozen confection is provided comprising: an insulated chamber (1) housing a container (3) of a frozen confection; a refrigeration system (8); a nozzle (4) having an inner end which is connected to the container (3); and an outer end which is located outside the insulated chamber; means for applying pressure to the frozen confection thereby to dispense it from the container (3); a cap (7) which can enclose the outer end (6) of the nozzle (4) when closed and which allows external access to the outer end (6) of the nozzle (4) when open; and one or more channels (12) which allow cold air to flow from the chamber into the region around the outer end of the nozzle; wherein the apparatus comprises a removable holder (10) that supports the container (3) and wherein the spaces between the container (3), the inside of the chamber and the underside of the holder form the one or more channels (12).
Abstract:
A transistor in which extended metal contacts (35, 37) are connected to underlying active areas (5, 7) by silicide material (25', 27'). The connective silicide material is formed by the successive deposition of a silicide forming metal (21) and contact patterned silicon (25, 27). This is heated to reaction temperature to provide silicide contacts (25', 27'). Windowed dielectric material (29) is then deposited and metal contacts (35, 37) formed.
Abstract:
A method for producing MOS transistors of the type having shallow, lightly doped, source/drain structure. In this method sidewall fillets (7) of n-type doped dielectric material are defined adjacent to the sides of the oxide (1) and metal electrode (3) features. These fillets (7) are then employed to provide self aligned masking during implantation of heavy dopant of either n- or p-type (9; 13). In a subsequent rapid anneal step, the implant dopant is activated and n-type dopant diffused into the substrate (5) from the fillets (7) to provide lightly doped source/drain structures (11; 15). Examples of this method are described for producing phosphorous-arsenic n /n and phosphorus-boron p /p source/drain structures.
Abstract translation:一种用于制造具有浅的,轻掺杂的源极/漏极结构的类型的MOS晶体管的方法。 在该方法中,n型掺杂电介质材料的侧壁片(7)与氧化物(1)和金属电极(3)的侧面相邻地限定。 然后使用这些圆角(7)在植入n型或p型(9; 13)的重掺杂物期间提供自对准掩蔽。 在随后的快速退火步骤中,注入掺杂剂被激活,并且n型掺杂剂从焊脚(7)扩散到衬底(5)中以提供轻掺杂的源/漏结构(11; 15)。 描述了用于产生磷 - 砷/ n +和磷 - 硼p - / p +源/漏结构的该方法的实例。
Abstract:
We describe a chilled beverage or glass dispenser, the dispenser comprising: an input port to receive a beverage bottle or glass to be chilled: an outlet port to provide a chilled beverage bottle or glass; a first, chilling region located on a path for a said bottle or glass between said input port and said output port; a blast chiller configured to chill a said bottle or glass in said chilling region; a second, refrigerated region located after said chilling region in said path, to maintain said bottle or glass in a chilled condition; and wherein said dispenser is configured such that, in use, a said path from said input port, through said chilling region, through said refrigerated region to said output port maintains a first-in first-out order of said beverage bottles or glasses.