公开(公告)号：WO2016180447A1

公开(公告)日：2016-11-17

申请号：PCT/EP2015/060232

申请日：2015-05-08

Applicant: APPLIED MATERIALS, INC. ,  SEVERIN, Daniel ,  KLÖPPEL, Andreas ,  HANIKA, Markus ,  BENDER, Marcus

Inventor： SEVERIN, Daniel ,  KLÖPPEL, Andreas ,  HANIKA, Markus ,  BENDER, Marcus

IPC: C23C14/08 ,  C23C14/34 ,  C23C14/54

CPC classification number: C23C14/083 ,  C23C14/3492 ,  C23C14/54

Abstract: A method of manufacturing a layer for a plurality of thin film transistors for display manufacturing and an apparatus therefore is described. The method includes sputtering a transparent conductive oxide layer from an indium oxide containing target in a processing gas atmosphere. The processing gas atmosphere includes H 2 , O 2 , and an inert gas, wherein the content of H 2 is from 2.2% to 20.0%, the content of O 2 is from 0.5% to 15.0%, and the content of inert gas is from 65.0% to 97.3 %. The apparatus (200) includes a vacuum chamber (210); one or more indium oxide containing targets (220a, 220b) within the vacuum chamber for sputtering a transparent conductive oxide layer; a gas distribution system (230) for providing a processing gas within the vacuum chamber; and a controller (240) connected to the gas distribution system and configured to execute a program code for conducting the method.

Abstract translation: 因此，制造用于显示制造的多个薄膜晶体管的层的方法和装置。 该方法包括在处理气体气氛中从含氧化铟的靶溅射透明导电氧化物层。 处理气体气氛包括H 2，O 2和惰性气体，其中H 2的含量为2.2％至20.0％，O 2的含量为0.5％至15.0％，惰性气体的含量为65.0％至 97.3％。 设备（200）包括真空室（210）; 在真空室内的一个或多个含氧化铟的靶（220a，220b）用于溅射透明导电氧化物层; 气体分配系统（230），用于在所述真空室内提供处理气体; 以及连接到所述气体分配系统并被配置为执行用于执行所述方法的程序代码的控制器（240）。

公开(公告)号：WO2016095976A1

公开(公告)日：2016-06-23

申请号：PCT/EP2014/078057

申请日：2014-12-16

Applicant: APPLIED MATERIALS, INC. ,  SEVERIN, Daniel ,  HANIKA, Markus ,  BENDER, Marcus ,  LINDENBERG, Ralph

Inventor： SEVERIN, Daniel ,  HANIKA, Markus ,  BENDER, Marcus ,  LINDENBERG, Ralph

IPC: C23C14/50 ,  C23C14/34 ,  C23C14/35 ,  C23C14/56 ,  C23C14/54 ,  H01J37/34 ,  C23C14/00 ,  H01J37/32

CPC classification number: C23C14/3492 ,  C23C14/0063 ,  C23C14/352 ,  C23C14/54 ,  C23C14/542 ,  C23C14/562 ,  H01J37/32733 ,  H01J37/3405 ,  H01J37/3417 ,  H01J37/3444 ,  H01J37/3447 ,  H01J37/347

Abstract: According to embodiments, an apparatus and a method for coating a substrate in a vacuum process chamber are provided. The method includes sputtering a sputter material from a sputter source while a first power is applied to the sputter source, wherein the sputter source is located in a first position relative to the substrate. The method includes moving the sputter source in a translational movement relative to the vacuum chamber while sputtering. The method further includes sputtering the sputter material from the sputter source while a second power is applied to the sputter source, wherein the sputter source is located in a second position relative to the substrate.

Abstract translation: 根据实施例，提供了一种用于在真空处理室中涂覆基板的装置和方法。 该方法包括在将第一功率施加到溅射源的同时从溅射源溅射溅射材料，其中溅射源位于相对于衬底的第一位置。 该方法包括在溅射时相对于真空室的平移运动移动溅射源。 该方法还包括在溅射源施加第二功率的同时从溅射源溅射溅射材料，其中溅射源相对于衬底位于第二位置。

公开(公告)号：WO2021028010A1

公开(公告)日：2021-02-18

申请号：PCT/EP2019/071493

申请日：2019-08-09

Applicant: APPLIED MATERIALS, INC. ,  HANIKA, Markus ,  PARK, Hyun Chan

Inventor： HANIKA, Markus ,  PARK, Hyun Chan

IPC: C23C14/35 ,  H01J37/34 ,  C23C14/56

Abstract: A method of coating a substrate with a cathode array having three or more cathode assemblies, the cathode assemblies having corresponding magnet assemblies that are rotatable, is described. The method includes: moving the substrate to a first position while the cathode array is switched off; coating of the substrate in the first position in a first operation while moving a first magnet assembly of the magnet assemblies in a reciprocating manner in a first, angular sector; switching off the cathode array before moving the substrate to a second position; moving the substrate to the second position while the cathode array is switched off; coating of the substrate in the second position while moving the first magnet assembly in a reciprocating manner in a further angular sector.

公开(公告)号：WO2016180448A1

公开(公告)日：2016-11-17

申请号：PCT/EP2015/060233

申请日：2015-05-08

Applicant: APPLIED MATERIALS, INC. ,  SEVERIN, Daniel ,  KLÖPPEL, Andreas ,  HANIKA, Markus ,  TSAI, Pipi ,  LIN, Wan-Yu

Inventor： SEVERIN, Daniel ,  KLÖPPEL, Andreas ,  HANIKA, Markus ,  TSAI, Pipi ,  LIN, Wan-Yu

IPC: C23C14/08 ,  C23C14/34 ,  C23C14/54 ,  C23C14/58

CPC classification number: C23C14/086 ,  C23C14/3492 ,  C23C14/54 ,  C23C14/5873

Abstract: A method of manufacturing a layer for a plurality of thin film transistors for display manufacturing and an apparatus therefore is described. The method includes depositing (101) a layer stack onto a substrate by sputtering a first layer with a first set of processing parameters from an indium oxide containing target; sputtering a second set of processing parameters different from the first set of processing parameters onto the first layer from an indium oxide containing target a second layer with, and patterning (102) the layer stack by etching. The apparatus (200) includes a vacuum chamber (210); one or more indium oxide containing targets (220a, 220b) within the vacuum chamber for sputtering a transparent conductive oxide layer; a gas distribution system (230) for providing a processing gas within the vacuum chamber; and a controller (240) connected to the gas distribution system (230) and configured to execute a program code for conducting the method.

Abstract translation: 因此，制造用于显示制造的多个薄膜晶体管的层的方法和装置。 该方法包括通过用来自含氧化铟的目标物体的第一组处理参数溅射第一层而将层堆叠沉积（101）到衬底上; 将不同于第一组处理参数的第二组处理参数从含有氧化铟的靶溅射到第一层上的第二层，并通过蚀刻图案化（102）层叠层。 装置（200）包括真空室（210）; 一个或多个含氧化铟的靶（220a，220b），用于溅射透明导电氧化物层; 气体分配系统（230），用于在真空室内提供处理气体; 以及连接到气体分配系统（230）并被配置为执行用于执行该方法的程序代码的控制器（240）。

公开(公告)号：WO2015139739A1

公开(公告)日：2015-09-24

申请号：PCT/EP2014/055427

申请日：2014-03-18

Applicant: APPLIED MATERIALS, INC. ,  KLÖPPEL, Andreas ,  HANIKA, Markus ,  ZENGEL, Claus ,  SCHEER, Evelyn

Inventor： KLÖPPEL, Andreas ,  HANIKA, Markus ,  ZENGEL, Claus ,  SCHEER, Evelyn

IPC: C23C14/00 ,  C23C14/34 ,  C23C14/35 ,  H01J37/32 ,  H01J37/34

CPC classification number: C23C14/0063 ,  C23C14/3464 ,  C23C14/352 ,  H01J37/3244 ,  H01J37/3405 ,  H01J37/3417

Abstract: An apparatus for static deposition of material on a substrate is described. The apparatus includes a gas distribution system for providing one or more process gases, wherein the gas distribution system is configured for controlling the flow rate of at least one process gas of the one or more process gases independently for two or more positions along a substrate transport direction and a cathode array having three or more cathodes which are spaced apart along the substrate transport direction.

Abstract translation: 描述了一种用于材料静电沉积在衬底上的装置。 该装置包括用于提供一种或多种处理气体的气体分配系统，其中气体分配系统被配置为独立地控制一个或多个处理气体的至少一个处理气体的流速，用于沿衬底输送 方向和具有三个或更多个阴极的阴极阵列，其沿衬底输送方向间隔开。

公开(公告)号：WO2014005617A1

公开(公告)日：2014-01-09

申请号：PCT/EP2012/062836

申请日：2012-07-02

Applicant: KLOEPPEL, Andreas ,  HANIKA, Markus ,  SCHEER, Evelyn ,  SCHWANITZ, Konrad ,  PIERALISI, Fabio ,  LIU, Jian ,  APPLIED MATERIALS, INC.

Inventor： KLOEPPEL, Andreas ,  HANIKA, Markus ,  SCHEER, Evelyn ,  SCHWANITZ, Konrad ,  PIERALISI, Fabio ,  LIU, Jian

IPC: H01J37/34 ,  C23C14/35

CPC classification number: C23C14/352 ,  H01J37/3405 ,  H01J37/3417 ,  H01J37/345

Abstract: An apparatus (10; 166; 224) for coating a layer of sputtered material on a substrate (12) is described. Said apparatus (10; 166; 224) comprises at least two magnet assemblies (60, 74, 82, 90, 98, 106), wherein each magnet assembly (60, 74, 82, 90, 98, 106) has an outer and an inner magnet polarity. The outer magnet polarity of one of the at least two magnet assemblies (60, 74, 82, 90, 98, 106) is different from an adjacent outer magnet polarity of the other one of the at least two magnet assemblies (60, 74, 82, 90, 98, 106). Further, a deposition system (14) is described which comprises such an apparatus (10; 166; 224).

Abstract translation: 描述了用于在衬底（12）上涂覆溅射材料层的设备（10; 166; 224）。 所述装置（10; 166; 224）包括至少两个磁体组件（60,74,82,90,98,106），其中每个磁体组件（60,74,82,90,98,106）具有外部和 内磁极性。 所述至少两个磁体组件（60,74,82,90,98,106）中的一个的外部磁体极性与所述至少两个磁体组件（60,74,96,106）中的另一个的相邻外部磁体极性不同， 82，90，98，106）。 此外，描述了包括这种装置（10; 166; 224）的沉积系统（14）。

公开(公告)号：WO2013026493A1

公开(公告)日：2013-02-28

申请号：PCT/EP2011/064670

申请日：2011-08-25

Applicant: APPLIED MATERIALS, INC. ,  HANIKA, Markus ,  LINDENBERG, Ralph ,  ZENGEL, Claus

Inventor： HANIKA, Markus ,  LINDENBERG, Ralph ,  ZENGEL, Claus

IPC: C23C14/04 ,  C23C16/04 ,  C23C8/04 ,  C23C10/04 ,  C23C2/00 ,  C23C4/02 ,  C23C4/00

CPC classification number: C23C8/04 ,  C23C2/006 ,  C23C4/01 ,  C23C10/04 ,  C23C14/042 ,  C23C16/042

Abstract: A mask structure configured for deposition of a layer on a rectangular substrate, e.g. an edge exclusion mask configured for deposition of a layer on a rectangular substrate is described. The mask structure includes a mask frame adapted for masking the edge of the substrate during layer deposition, wherein the mask frame comprises at least two mask frame side portions forming a corner in a corner area there between, wherein the mask frame is shaped to overlap the edge of the rectangular substrate such that a first overlap width at the side portions is larger than a second overlap width in the corner area.

Abstract translation: 掩模结构，其被配置用于在矩形基板上沉积层，例如， 描述了被配置用于在矩形基板上沉积层的边缘排除掩模。 掩模结构包括适于在层沉积期间掩蔽基板的边缘的掩模框架，其中所述掩模框架包括形成在其间的拐角区域中的角部的至少两个掩模框架侧部分，其中所述掩模框架成形为与 所述矩形基板的边缘使得所述侧部处的第一重叠宽度大于所述拐角区域中的第二重叠宽度。

公开(公告)号：WO2023041185A1

公开(公告)日：2023-03-23

申请号：PCT/EP2021/075811

申请日：2021-09-20

Applicant: APPLIED MATERIALS, INC. ,  GOVINDASAMY, Sathiyamurthi ,  HANIKA, Markus ,  RAJU, Brijesh ,  KLEIN, Wolfgang

Inventor： GOVINDASAMY, Sathiyamurthi ,  HANIKA, Markus ,  RAJU, Brijesh ,  KLEIN, Wolfgang

IPC: C23C14/04 ,  C23C14/50 ,  C23C16/04 ,  C23C16/458

Abstract: A mask frame support element for a mask frame support is described. The mask frame support element includes along a first direction, which is configured to extend along a side edge of a substrate, a protruding section configured to provide a contact to the substrate and a recessed section configured to couple a portion of a mask frame to the mask frame support. A mask frame element is described. The mask frame element includes a body having a mask edge extending along a first direction configured to extend along a side edge of a substrate. The body has a protrusion extending downwardly and providing the mask edge. The protrusion includes a first section having a first width extending from the mask edge away from the mask edge and a second section having a second width larger than the first width, the second width extending from the mask edge away from the mask edge.

公开(公告)号：WO2018145751A1

公开(公告)日：2018-08-16

申请号：PCT/EP2017/052884

申请日：2017-02-09

Applicant: APPLIED MATERIALS, INC. ,  HANIKA, Markus ,  OLSON, Joseph C. ,  KURUNCZI, Peter F. ,  YIM, Dong-Kil ,  BENDER, Marcus

Inventor： HANIKA, Markus ,  OLSON, Joseph C. ,  KURUNCZI, Peter F. ,  YIM, Dong-Kil ,  BENDER, Marcus

IPC: C23C14/02 ,  C23C14/48 ,  C23C14/56 ,  H01L21/26 ,  H01L21/687

CPC classification number: C23C14/02 ,  C23C14/022 ,  C23C14/48 ,  C23C14/568 ,  H01L21/26 ,  H01L21/67173 ,  H01L21/67709 ,  H01L21/67712 ,  H01L21/6776 ,  H01L21/6831

Abstract: A method for vacuum processing of a substrate (10) is provided. The method includes irradiating the substrate (10) or a first material layer on the substrate (10) with particles using an implantation source (130) provided in a processing region (110), and moving the substrate (10) through the processing region (110) along a transportation path (20) while the substrate (10) or the first material layer is irradiated with the particles.

公开(公告)号：WO2017194088A1

公开(公告)日：2017-11-16

申请号：PCT/EP2016/060322

申请日：2016-05-09

Applicant: APPLIED MATERIALS, INC. ,  HANIKA, Markus ,  GRAW, Oliver ,  BERGER, Thomas

Inventor： HANIKA, Markus ,  GRAW, Oliver ,  BERGER, Thomas

IPC: C23C14/02 ,  C23C14/56

CPC classification number: C23C14/022 ,  C23C14/56

Abstract: A method for vacuum processing of a substrate (10) is provided. The method includes irradiating a substrate surface (11) or a surface of a first material layer on the substrate (10) with ions using an ion etch source (130) provided in a processing region (110) while the substrate (10) is moved through the processing region (110) along a transportation path (20), moving the substrate (10) along the transportation path (20) into a deposition region (120), and depositing at least one second material layer over the substrate surface (11) or over the first material layer while the substrate (10) is stationary.

Abstract translation: 提供了一种用于真空处理衬底（10）的方法。 该方法包括在移动基板（10）的同时使用设置在处理区域（110）中的离子蚀刻源（130）用离子照射基板（10）上的基板表面（11）或第一材料层的表面 通过沿着传输路径（20）的处理区域（110），沿着传输路径（20）移动衬底（10）进入沉积区域（120），并且在衬底表面（11）上沉积至少一个第二材料层 ）或在衬底（10）静止时覆盖第一材料层。