公开(公告)号：WO2010054076A3

公开(公告)日：2010-07-29

申请号：PCT/US2009063394

申请日：2009-11-05

Applicant: APPLIED MATERIALS INC ,  SORABJI KHURSHED ,  RANISH JOSEPH M ,  ADERHOLD WOLFGANG ,  HUNTER AARON M ,  KOELMEL BLAKE R ,  LERNER ALEXANDER N ,  MERRY NIR

Inventor： SORABJI KHURSHED ,  RANISH JOSEPH M ,  ADERHOLD WOLFGANG ,  HUNTER AARON M ,  KOELMEL BLAKE R ,  LERNER ALEXANDER N ,  MERRY NIR

IPC: H01L21/324 ,  H01L21/68 ,  H01L21/683 ,  H01L21/687

CPC classification number: H01L21/67259 ,  C23C16/46 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/68 ,  H01L21/681 ,  H01L21/6835 ,  H01L21/68742

Abstract: Methods and apparatus for rapid thermal processing of a planar substrate including axially aligning the substrate with a substrate support or with an empirically determined position are described. The methods and apparatus include a sensor system that determines the relative orientations of the substrate and the substrate support.

Abstract translation: 描述了包括将衬底轴向对准衬底支撑件或经验确定的位置的用于快速热处理平面衬底的方法和装置。 所述方法和装置包括确定衬底和衬底支撑件的相对取向的传感器系统。

公开(公告)号：WO2010006156A2

公开(公告)日：2010-01-14

申请号：PCT/US2009/050085

申请日：2009-07-09

Applicant: APPLIED MATERIALS, INC. ,  SORABJI, Khurshed ,  RANISH, Joseph, M. ,  ADERHOLD, Wolfgang ,  HUNTER, Aaron, M. ,  LERNER, Alexander, N.

Inventor： SORABJI, Khurshed ,  RANISH, Joseph, M. ,  ADERHOLD, Wolfgang ,  HUNTER, Aaron, M. ,  LERNER, Alexander, N.

IPC: H01L21/324

CPC classification number: H01L21/67109 ,  C23C16/4404 ,  C23C16/45512 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45572 ,  C23C16/4584 ,  C23C16/481 ,  F27B17/0025 ,  H01L21/67098 ,  H01L21/67115 ,  H01L21/67167 ,  H01L21/67207

Abstract: Apparatus and methods for thermally processing a substrate are provided. A chamber containing a levitating support assembly configured to position the substrate at different distances from a plate during the heating and cooling of a substrate. In one embodiment a plurality of openings on the surface of the plate are configured to evenly distribute gas across a radial surface of the substrate. The distribution of gas may couple radiant energy not reflected back to the substrate during thermal processing with an absorptive region of the plate to begin the cooling of the substrate. The method and apparatus provided within allows for a controllable and effective means for thermally processing a substrate rapidly.

Abstract translation: 提供了用于热处理基板的设备和方法。 包含悬浮支撑组件的腔室，其构造成在衬底的加热和冷却期间将衬底定位在与板不同的距离处。 在一个实施例中，板的表面上的多个开口构造成均匀地分布气体穿过衬底的径向表面。 气体的分布可以在热处理期间将具有未反射回衬底的辐射能量与板的吸收区域耦合以开始冷却衬底。 所提供的方法和装置允许用于快速热处理基板的可控和有效的装置。

公开(公告)号：WO2009089248A3

公开(公告)日：2009-10-08

申请号：PCT/US2009030275

申请日：2009-01-07

Applicant: APPLIED MATERIALS INC ,  KOELMEL BLAKE ,  MAYUR ABHILASH J ,  MA KAI ,  LERNER ALEXANDER N

Inventor： KOELMEL BLAKE ,  MAYUR ABHILASH J ,  MA KAI ,  LERNER ALEXANDER N

IPC: H01L21/68 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/683 ,  H01L21/687

CPC classification number: H01L21/67248 ,  C23C16/4586 ,  H01L21/68742

Abstract: Embodiments of the invention contemplate a method, apparatus and system that are used to support and position a substrate on a surface that is at a different temperature than the initial, or incoming, substrate temperature. Embodiments of the invention may also include a method of controlling the transfer of heat between a substrate and substrate support positioned in a processing chamber. The apparatus and methods described herein generally may also provide an inexpensive and simple way of accurately positioning a substrate on a substrate support that is positioned in a semiconductor processing chamber. Substrate processing chambers that can benefit from the various embodiments described herein include, but are not limited to RTP, CVD, PVD, ALD, plasma etching, and/or laser annealing chambers.

Abstract translation: 本发明的实施方案考虑了一种方法，装置和系统，其用于将衬底支撑并定位在与初始或进入衬底温度不同的温度的表面上。 本发明的实施例还可以包括控制位于处理室中的衬底和衬底支撑件之间的热传递的方法。 本文所述的装置和方法通常还可以提供将衬底精确地定位在位于半导体处理室中的衬底支撑件上的便宜且简单的方法。 可受益于本文描述的各种实施方案的衬底处理室包括但不限于RTP，CVD，PVD，ALD，等离子体蚀刻和/或激光退火室。

公开(公告)号：WO2009120729A1

公开(公告)日：2009-10-01

申请号：PCT/US2009/038156

申请日：2009-03-25

Applicant: APPLIED MATERIALS, INC. ,  SORABJI, Khurshed ,  LERNER, Alexander, N. ,  RANISH, Joseph, M. ,  HUNTER, Aaron, M. ,  ADAMS, Bruce, E. ,  BEHDJAT, Mehran ,  RAMANUJAM, Rajesh, S.

Inventor： SORABJI, Khurshed ,  LERNER, Alexander, N. ,  RANISH, Joseph, M. ,  HUNTER, Aaron, M. ,  ADAMS, Bruce, E. ,  BEHDJAT, Mehran ,  RAMANUJAM, Rajesh, S.

IPC: H01L21/324 ,  H01L21/683 ,  H01L21/687

CPC classification number: H01L21/67109 ,  H01L21/67115 ,  H01L21/67248

Abstract: Apparatus and methods for achieving uniform heating or cooling of a substrate during a rapid thermal process are disclosed. More particularly, apparatus and methods for controlling the temperature of an edge ring supporting a substrate and/or a reflector plate during a rapid thermal process to improve temperature uniformity across the substrate are disclosed, which include a thermal mass or plate adjacent the edge ring to heat or cool the edge ring.

Abstract translation: 公开了用于在快速热处理期间实现基板的均匀加热或冷却的装置和方法。 更具体地，公开了用于在快速热处理期间控制支撑衬底和/或反射板的边缘环的温度以改善衬底上的温度均匀性的装置和方法，其包括邻近边缘环到 加热或冷却边缘环。

公开(公告)号：WO2009085992A3

公开(公告)日：2009-09-24

申请号：PCT/US2008087496

申请日：2008-12-18

Applicant: APPLIED MATERIALS INC ,  TSENG MING-KUEI MICHAEL ,  TAM NORMAN ,  YOKOTA YOSHITAKA ,  TJANDRA AGUS ,  NAVASCA ROBERT ,  BEHDJAT MEDHRAN ,  RAMAMURTHY SUNDAR ,  SANGAM KEDARNATH ,  LERNER ALEXANDER N

Inventor： TSENG MING-KUEI MICHAEL ,  TAM NORMAN ,  YOKOTA YOSHITAKA ,  TJANDRA AGUS ,  NAVASCA ROBERT ,  BEHDJAT MEDHRAN ,  RAMAMURTHY SUNDAR ,  SANGAM KEDARNATH ,  LERNER ALEXANDER N

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/324

CPC classification number: H01L21/67115 ,  F27D7/06 ,  H01L21/67017 ,  H01L21/67098

Abstract: Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.

Abstract translation: 本发明的实施例提供了用于改善热处理期间气体分布的装置和方法。 本发明的一个实施例提供了一种用于处理衬底的装置，其包括限定处理体积的室主体，设置在处理体积中的衬底支撑件，其中衬底支撑件构造成支撑和旋转衬底，气体入口组件， 室主体的入口并且被配置为向处理容积提供第一气流，以及联接到室主体的出口的排气组件，其中气体入口组件和排气组件设置在室主体的相对侧上 ，并且排气组件限定了被配置为延长处理量的排气量。

公开(公告)号：WO2012021464A3

公开(公告)日：2012-02-16

申请号：PCT/US2011/046987

申请日：2011-08-09

Applicant: APPLIED MATERIALS, INC. ,  KOELMEL, Blake R. ,  HUNTER, Aaron M. ,  LERNER, Alexander N.

Inventor： KOELMEL, Blake R. ,  HUNTER, Aaron M. ,  LERNER, Alexander N.

IPC: H01L21/324

Abstract: The present invention generally relates to methods and apparatus for processing substrates. Embodiments of the invention include apparatuses for processing a substrate comprising a ceramic reflector plate, which may be optically transparent. The reflector plate may include a reflective coating and be part of a reflector plate assembly in which the reflector plate is assembled to a baseplate.

公开(公告)号：WO2009137773A2

公开(公告)日：2009-11-12

申请号：PCT/US2009043305

申请日：2009-05-08

Applicant: APPLIED MATERIALS INC ,  RANISH JOSEPH M ,  SORABJI KHURSHED ,  LERNER ALEXANDER N ,  HUNTER AARON M

Inventor： RANISH JOSEPH M ,  SORABJI KHURSHED ,  LERNER ALEXANDER N ,  HUNTER AARON M

IPC: H01L21/324

CPC classification number: H01L21/324 ,  H01L21/67115 ,  H01L21/67248

Abstract: Methods and apparatus for hyperbaric rapid thermal processing of a substrate are described. Methods of processing a substrate in a rapid thermal processing chamber are described that include passing a substrate from outside the chamber through an access port onto a support in the interior region of the processing chamber, closing a port door sealing the chamber, pressurizing the chamber to a pressure greater than 1.5 atmospheres absolute and directing radiant energy toward the substrate. Hyperbaric rapid thermal processing chambers are described which are constructed to withstand pressures greater than at least about 1.5 atmospheres absolute or, optionally, 2 atmospheres of absolute pressure. Processing chambers may include pressure control valves to control the pressure within the chamber.

Abstract translation: 描述了用于衬底高压快速热处理的方法和装置。 描述了在快速热处理室中处理基板的方法，其包括将基板从室外通过进入端口传送到处理室的内部区域中的支撑件上，关闭密封该室的端口门，将该室加压至 绝对压力大于1.5个大气压，并将辐射能量引向基板。 描述了高压快速热处理室，其被构造为承受大于至少约1.5大气压绝对压力或任选地大气压绝压的压力。 处理室可以包括压力控制阀，以控制室内的压力。

公开(公告)号：WO2009102600A1

公开(公告)日：2009-08-20

申请号：PCT/US2009/033102

申请日：2009-02-04

Applicant: APPLIED MATERIALS, INC. ,  KOELMEL, Blake ,  MCINTOSH, Robert C. ,  LARMAGNAC, David D. L. ,  LERNER, Alexander N. ,  MAYUR, Abhilash J. ,  YUDOVSKY, Joseph

Inventor： KOELMEL, Blake ,  MCINTOSH, Robert C. ,  LARMAGNAC, David D. L. ,  LERNER, Alexander N. ,  MAYUR, Abhilash J. ,  YUDOVSKY, Joseph

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/324

CPC classification number: H01L21/67115 ,  H01L21/268 ,  H01L21/68735 ,  H01L21/68742

Abstract: A method and apparatus for thermally processing a substrate is provided. A substrate is disposed within a processing chamber configured for thermal processing by directing electromagnetic energy toward a surface of the substrate. An energy blocker is provided to block at least a portion of the energy directed toward the substrate. The blocker prevents damage to the substrate from thermal stresses as the incident energy approaches an edge of the substrate.

Abstract translation: 提供了一种用于热处理衬底的方法和装置。 衬底被布置在处理室内，其被配置用于通过将电磁能量引导到衬底的表面来进行热处理。 提供能量阻挡器以阻挡朝向衬底的能量的至少一部分。 当入射能量接近衬底的边缘时，阻挡剂防止由于热应力而损坏衬底。

公开(公告)号：WO2009094275A3

公开(公告)日：2009-07-30

申请号：PCT/US2009/030996

申请日：2009-01-14

Applicant: APPLIED MATERIALS, INC. ,  KOELMEL, Blake ,  LERNER, Alexander, N. ,  RANISH, Joseph, M. ,  SANGAM, Kedarnath ,  SORABJI, Khurshed

Inventor： KOELMEL, Blake ,  LERNER, Alexander, N. ,  RANISH, Joseph, M. ,  SANGAM, Kedarnath ,  SORABJI, Khurshed

IPC: H01L21/683 ,  H01L21/687 ,  H01L21/205 ,  H01L21/324

Abstract: Embodiments of the invention contemplate a method, apparatus and system that are used to support, position, and rotate a substrate during processing. Embodiments of the invention may also include a method of controlling the transfer of heat between a substrate and substrate support positioned in a processing chamber. The apparatus and methods described herein remove the need for complex, costly and often unreliable components that would be required to accurately position and rotate a substrate during one or more processing steps, such as an rapid thermal processing (RTP) process, a chemical vapor deposition (CVD) process, a physical vapor deposition (PVD) process, atomic layer deposition (ALD) process, dry etching process, wet clean, and/or laser annealing process.

公开(公告)号：WO2007103643B1

公开(公告)日：2008-06-26

申请号：PCT/US2007062672

申请日：2007-02-23

Applicant: APPLIED MATERIALS INC ,  MAYUR ABHILASH ,  YAM MARK ,  BALAKRISHNA AJIT ,  CAREY PAUL ,  JENNINGS DEAN ,  MOFFATT STEPHEN ,  SCHAFFER WILLIAM ,  LERNER ALEXANDER N ,  THOMAS TIMOTHY N ,  HUNTER AARON MUIR

Inventor： MAYUR ABHILASH ,  YAM MARK ,  BALAKRISHNA AJIT ,  CAREY PAUL ,  JENNINGS DEAN ,  MOFFATT STEPHEN ,  SCHAFFER WILLIAM ,  LERNER ALEXANDER N ,  THOMAS TIMOTHY N ,  HUNTER AARON MUIR

IPC: H01L21/76

CPC classification number: H01L21/823418 ,  H01L21/823425 ,  H01L21/823475

Abstract: The present invention generally describes one ore more apparatuses and various methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps, more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.

Abstract translation: 本发明总体上描述了用于在衬底的期望区域上执行退火工艺的一种或多种设备和各种方法。 在一个实施方案中，一定量的能量被传递至基材表面以优先熔化基材的某些所需区域以去除由之前的处理步骤产生的不希望的损伤，更均匀地将掺杂剂分布在基材的各个区域中，和/或活化 衬底的各个区域。 由于掺杂剂原子在衬底的熔化区域中的扩散速率和溶解度增加，所以优先熔化过程将允许掺杂剂在熔化区域中更均匀的分布。 因此，熔化区域的产生允许：1）掺杂剂原子更均匀地重新分布，2）在先前的工艺步骤中产生的待去除的缺陷，以及3）将形成具有超突变掺杂剂浓度的区域。