Abstract:
An integrated circuit which enables lower cost yet provides superior performance compared to standard silicon integrated circuits by utilizing thin film transistors (TFTs) fabricated in BEOL. Improved memory circuits are enabled by utilizing TFTs to improve density and access in a three dimensional circuit design which minimizes die area. Improved I/O is enabled by eliminating the area on the surface of the semiconductor dedicated to I/O and allowing many times the number of I/O available. Improved speed and lower power are also enabled by the shortened metal routing lines and reducing leakage.
Abstract:
An improved crosspoint memory array device comprising a plurality of memory cells is introduced. Each memory cell being is disposed at an intersection region of the conductive lines, where one of the first conductive lines is electrically coupled at a first terminal and one of the second conductive lines is electrically coupled at a second terminal. Each conductive line is electrically coupled to at least two thin film transistors (TFTs), which provide access to the memory cell. Each memory cell comprises an electrical resistance, which is controllable using a back to back Schottky diode, which is located between each memory cell and one of the said conductive lines. The device is substantially produced in BEOL facilities without the need of front end semiconductor production facilities, but can still be mad with ultra high density and at low cost.
Abstract:
A projection display system. The system includes a first polarizer; and an electro-optical light scattering medium disposed in a transmission path between the first polarizer and a light source. A plane of polarization of the first polarizer is substantially parallel to a plane of polarization of the light source. The light scattering medium is switchable from a first state to a second state in response to an applied electrical field. The electro-optical light scattering medium in the first state forms a bright region in the projection display and in the second state forms a dark region in the projection display. The transmission path makes a single pass through the light scattering medium.
Abstract:
Apparatus and associated methods relate to quasi-adiabatic logic gates in which at least one supply terminal receives sinusoidal power. The quasi-adiabatic logic gate is configured to perform a specific logic function operative upon one or more input signals. When the quasi-adiabatic logic gate switches the output from one logic state to another logic state, the transient switching portion of the output signal substantially tracks the sinusoidal supply signal. Such a sinusoidal transient switching portion of the signal has lower frequency components than have traditional CMOS logic gate transients. Some embodiments include an inductor through which the sinusoidal supply signal is provided to the quasi-adiabatic logic gate. Such an inductor can both provide charge to and recover charge from switching quasi-adiabatic logic gates, thereby further reducing power.
Abstract:
An integrated circuit which enables lower cost yet provides superior performance compared to standard silicon integrated circuits by utilizing thin film transistors (TFTs) fabricated in BEOL. Improved memory circuits are enabled by utilizing TFTs to improve density and access in a three dimensional circuit design which minimizes die area. Improved I/O is enabled by eliminating the area on the surface of the semiconductor dedicated to I/O and allowing many times the number of I/O available. Improved speed and lower power are also enabled by the shortened metal routing lines and reducing leakage.
Abstract:
A projection system. The system includes a first polarizer (102); and an electro-optical light scattering medium (103) disposed in a transmissive path between the first polarizer and a light source (108, 109, 110). A plane of polarization of the first polarizer is substantially parallel to a plane of polarization of the light source. The light scattering medium is switchable from a first state to a second state in response to an applied electrical field. The electro-optical light scattering medium in the first state forms a bright region in the projection display and in the second state forms a dark region in the projection display. The transmission path makes a single pass through the light scattering medium.