公开(公告)号：WO2010015401A2

公开(公告)日：2010-02-11

申请号：PCT/EP2009/005694

申请日：2009-08-06

Applicant: S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES ,  LETERTRE, Fabrice ,  MAZURE, Carlos ,  KRAMES, Michael, R. ,  MCLAURIN, Melvin, B. ,  GARDNER, Nathan, F.

Inventor： LETERTRE, Fabrice ,  MAZURE, Carlos ,  KRAMES, Michael, R. ,  MCLAURIN, Melvin, B. ,  GARDNER, Nathan, F.

IPC: H01L21/324 ,  H01L21/20 ,  H01L33/00

CPC classification number: H01L21/2007 ,  H01L21/02422 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/3245 ,  H01L33/0095

Abstract: The present invention relates to a method for relaxing a strained material layer, comprising depositing a first low-viscosity layer comprising a first compliant material on the strained material layer, depositing a second low-viscosity layer comprising a second compliant material on the strained material layer to form a first sandwiched structure and subjecting the first sandwiched structure to a heat treatment such that reflow of the first and the second low-viscosity layers is caused thereby at least partly relaxing the strained material layer.

Abstract translation: 本发明涉及一种松弛应变材料层的方法，包括在应变材料层上沉积包含第一顺应材料的第一低粘度层，在应变材料层上沉积包含第二柔性材料的第二低粘度层 以形成第一夹层结构，并对第一夹层结构进行热处理，从而使第一和第二低粘度层的回流至少部分地松弛应变材料层。

公开(公告)号：WO2011086494A1

公开(公告)日：2011-07-21

申请号：PCT/IB2011/050096

申请日：2011-01-10

Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V. ,  PHILIPS LUMILEDS LIGHTING COMPANY, LLC ,  GARDNER, Nathan F. ,  KRAMES, Michael R. ,  MCLAURIN, Melvin B. ,  YI, Sungsoo

Inventor： GARDNER, Nathan F. ,  KRAMES, Michael R. ,  MCLAURIN, Melvin B. ,  YI, Sungsoo

IPC: H01L33/00

CPC classification number: H01L33/007 ,  H01L21/02458

Abstract: A method according to embodiments of the invention includes providing a substrate comprising a host and a seed layer bonded to the host. The seed layer comprises a plurality of regions. A semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region is grown on the substrate. A top surface of a semiconductor layer grown on the seed layer has a lateral extent greater than each of the plurality of seed layer regions.

Abstract translation: 根据本发明的实施方案的方法包括提供包含与宿主结合的宿主和种子层的底物。 种子层包括多个区域。 在衬底上生长包括设置在n型区域和p型区域之间的发光层的半导体结构。 在种子层上生长的半导体层的顶表面的横向范围大于多个种子层区域中的每一个。

公开(公告)号：WO2008073414A1

公开(公告)日：2008-06-19

申请号：PCT/US2007/025302

申请日：2007-12-11

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA ,  KIM, Kwang, Choong ,  SCHMIDT, Mathew, C. ,  WU, Feng ,  HIRAI, Asako ,  MCLAURIN, Melvin, B. ,  DENBAARS, Steven, P. ,  NAKAMURA, Shuji ,  SPECK, James, S.

Inventor： KIM, Kwang, Choong ,  SCHMIDT, Mathew, C. ,  WU, Feng ,  HIRAI, Asako ,  MCLAURIN, Melvin, B. ,  DENBAARS, Steven, P. ,  NAKAMURA, Shuji ,  SPECK, James, S.

IPC: H01L33/00 ,  H01L21/00

CPC classification number: C30B25/04 ,  C30B29/403 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265 ,  H01L33/007

Abstract: A method of reducing threading dislocation densities in non-polar such as a- {11-20} plane and m-{l-100} plane or semi-polar such as {10-ln} plane Ill-Nitrides by employing lateral epitaxial overgrowth from sidewalls of etched template material through a patterned mask. The method includes depositing a patterned mask on a template material such as a non-polar or semi polar GaN template, etching the template material down to various depths through openings in the mask, and growing non-polar or semi -polar HI-Nitride by coalescing laterally from the tops of the sidewalls before the vertically growing material from the trench bottoms reaches the tops of the sidewalls. The coalesced features grow through the openings of the mask, and grow laterally over the dielectric mask until a fully coalesced continuous film is achieved.

Abstract translation: 通过使用横向外延过度生长，减少非极性（例如 - {11-20}面和m-（1- 100）面或半极性例如{10 -nn面]氮化铟的穿透位错密度的方法 从蚀刻的模板材料的侧壁通过图案化掩模。 该方法包括在诸如非极性或半极性GaN模板的模板材料上沉积图案化掩模，通过掩模中的开口将模板材料蚀刻到各种深度，以及通过在掩模中的开口生长非极性或半极性的HI-氮化物 在来自沟槽底部的垂直生长的材料到达侧壁的顶部之前，从侧壁的顶部侧向聚结。 聚结的特征通过掩模的开口生长，并且在介电掩模上横向生长，直到实现完全聚结的连续膜。

公开(公告)号：WO2005122267A2

公开(公告)日：2005-12-22

申请号：PCT/US2005/018823

申请日：2005-05-31

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA? ,  JAPAN SCIENCE AND TECHNOLOGY AGENCY? ,  HASKELL, Benjamin, A. ,  MCLAURIN, Melvin, B. ,  DENBAARS, Steven, P. ,  SPECK, James, S. ,  NAKAMURA, Shuji

Inventor： HASKELL, Benjamin, A. ,  MCLAURIN, Melvin, B. ,  DENBAARS, Steven, P. ,  SPECK, James, S. ,  NAKAMURA, Shuji

IPC: H01L29/15

CPC classification number: C30B29/406 ,  C30B25/02 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02647 ,  H01L33/007

Abstract: A method of growing highly planar, fully transparent and specular m -plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. High quality, uniform, thick m -plane gaN films are produced for use as substrates for polarization-free device growth.

Abstract translation: 生长高度平面，完全透明和镜面的m面氮化镓（GaN）膜的方法。 该方法通过侧向过度生长技术显着降低结构缺陷密度。 制造高品质，均匀，厚的m面GaN膜用作无极化器件生长的衬底。

公开(公告)号：WO2010100572A1

公开(公告)日：2010-09-10

申请号：PCT/IB2010/050520

申请日：2010-02-04

Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLC ,  KONINKLIJKE PHILIPS ELECTRONICS N.V. ,  MCLAURIN, Melvin B.

Inventor： MCLAURIN, Melvin B.

IPC: H01L21/02 ,  H01L33/32 ,  H01S5/343

CPC classification number: H01S5/343 ,  B82Y20/00 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/06 ,  H01L33/32

Abstract: Embodiments of the invention include a Ill-nitride semiconductor structure comprising a light emitting region (16) disposed between an n-type region (14) and a p-type region. At least one layer in the light emitting region (18) is B x (In y Ga 1-y ) 1-x N. In some embodiments, x is less than 14%. In some embodiments, the BN composition is selected such that the B x (In y Ga 1-y ) 1- X N layer has the same band gap energy as a comparable InGaN layer, with a bulk lattice constant that is the same or smaller than the comparable InGaN layer.

Abstract translation: 本发明的实施例包括包括设置在n型区域（14）和p型区域之间的发光区域（16）的III族氮化物半导体结构。 发光区域（18）中的至少一层是Bx（In y Ga 1-y）1-x N。 在一些实施方案中，x小于14％。 在一些实施例中，选择BN组分使得Bx（In y Ga 1-y）1-X N层具有与可比较的InGaN层相同的带隙能量，其体晶格常数与相当的InGaN层相同或更小 。

公开(公告)号：WO2010035211A1

公开(公告)日：2010-04-01

申请号：PCT/IB2009/054134

申请日：2009-09-21

Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLC ,  KONINKLIJKE PHILIPS ELECTRONICS N.V. ,  MCLAURIN, Melvin B. ,  KRAMES, Michael R.

Inventor： MCLAURIN, Melvin B. ,  KRAMES, Michael R.

IPC: H01L33/00 ,  H01L33/08 ,  H01L33/62 ,  H01L27/15 ,  H01L33/12 ,  H01L33/38 ,  H01L33/50

CPC classification number: H01L33/007 ,  H01L27/153 ,  H01L27/156 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/12 ,  H01L33/382 ,  H01L33/385 ,  H01L33/42 ,  H01L33/505 ,  H01L33/62 ,  H01L2224/24 ,  H01L2933/0016

Abstract: A plurality of III-nitride semiconductor structures, each comprising a light emitting layer disposed between an n-type region and a p-type region, are grown on a composite substrate. The composite substrate includes a plurality of islands of III-nitride material connected to a host by a bonding layer. The plurality of III-nitride semiconductor structures are grown on the III-nitride islands. The composite substrate may be formed such that each island of III-nitride material is at least partially relaxed. As a result, the light emitting layer of each semiconductor structure has an a-lattice constant greater than 3.19 angstroms.

Abstract translation: 在复合基板上生长各自包含设置在n型区域和p型区域之间的发光层的III族氮化物半导体结构体。 复合衬底包括通过结合层连接到主体的多个III族氮化物材料岛。 在III族氮化物岛上生长多个III族氮化物半导体结构。 复合衬底可以形成为使得每个岛状III族氮化物材料至少部分地松弛。 结果，每个半导体结构的发光层的a晶格常数大于3.19埃。

公开(公告)号：WO2008073414A8

公开(公告)日：2008-09-04

申请号：PCT/US2007025302

申请日：2007-12-11

Applicant: UNIV CALIFORNIA ,  KIM KWANG CHOONG ,  SCHMIDT MATHEW C ,  WU FENG ,  HIRAI ASAKO ,  MCLAURIN MELVIN B ,  DENBAARS STEVEN P ,  NAKAMURA SHUJI ,  SPECK JAMES S

Inventor： KIM KWANG CHOONG ,  SCHMIDT MATHEW C ,  WU FENG ,  HIRAI ASAKO ,  MCLAURIN MELVIN B ,  DENBAARS STEVEN P ,  NAKAMURA SHUJI ,  SPECK JAMES S

IPC: H01L21/00 ,  H01L33/00

CPC classification number: C30B25/04 ,  C30B29/403 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265 ,  H01L33/007

Abstract: A method of reducing threading dislocation densities in non-polar such as a-{11-20} plane and m-{1-100} plane or semi-polar such as {10-1n} plane III-Nitrides by employing lateral epitaxial overgrowth from sidewalls of etched template material through a patterned mask. The method includes depositing a patterned mask on a template material such as a non-polar or semi polar GaN template, etching the template material down to various depths through openings in the mask, and growing non-polar or semi-polar III-Nitride by coalescing laterally from the tops of the sidewalls before the vertically growing material from the trench bottoms reaches the tops of the sidewalls. The coalesced features grow through the openings of the mask, and grow laterally over the dielectric mask until a fully coalesced continuous film is achieved.

Abstract translation: 通过使用横向外延过度生长，减少非极性（例如 - {11-20}面和m- {1-100}面或半极性，例如{10-1n}面III-氮化物）的穿透位错密度的方法 从蚀刻的模板材料的侧壁通过图案化掩模。 该方法包括在诸如非极性或半极性GaN模板的模板材料上沉积图案化掩模，通过掩模中的开口将模板材料蚀刻到各种深度，以及通过掩模中的开口生长非极性或半极性III-氮化物 在来自沟槽底部的垂直生长的材料到达侧壁的顶部之前，从侧壁的顶部侧向聚结。 聚结的特征通过掩模的开口生长，并且在介电掩模上横向生长，直到实现完全聚结的连续膜。

公开(公告)号：WO2005122267A8

公开(公告)日：2007-01-11

申请号：PCT/US2005018823

申请日：2005-05-31

Applicant: UNIV CALIFORNIA ,  JAPAN SCIENCE & TECH AGENCY ,  HASKELL BENJAMIN A ,  MCLAURIN MELVIN B ,  DENBAARS STEVEN P ,  SPECK JAMES S ,  NAKAMURA SHUJI

Inventor： HASKELL BENJAMIN A ,  MCLAURIN MELVIN B ,  DENBAARS STEVEN P ,  SPECK JAMES S ,  NAKAMURA SHUJI

IPC: H01L21/00 ,  C30B25/02 ,  C30B29/40 ,  H01L21/20 ,  H01L21/205 ,  H01L21/31 ,  H01L21/469 ,  H01L29/15 ,  H01L31/0312 ,  H01L33/00

CPC classification number: C30B29/406 ,  C30B25/02 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02647 ,  H01L33/007

Abstract: A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. High quality, uniform, thick m-plane gaN films are produced for use as substrates for polarization-free device growth.

Abstract translation: 生长高度平面，完全透明和镜面的m面氮化镓（GaN）膜的方法。 该方法通过侧向过度生长技术显着降低结构缺陷密度。 生产高质量，均匀，厚的m面GaN膜用作无极化器件生长的衬底。

公开(公告)号：WO2011086441A1

公开(公告)日：2011-07-21

申请号：PCT/IB2010/056112

申请日：2010-12-29

Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V. ,  PHILIPS LUMILEDS LIGHTING COMPANY, LLC ,  DAVID, Aurelien J.F. ,  KRAMES, Michael R. ,  MCLAURIN, Melvin B.

Inventor： DAVID, Aurelien J.F. ,  KRAMES, Michael R. ,  MCLAURIN, Melvin B.

IPC: H01L33/20 ,  H01L33/32

CPC classification number: H01L33/20 ,  H01L33/0079 ,  H01L33/22 ,  H01L2933/0083

Abstract: Embodiments of the invention include a substrate comprising a host and a seed layer bonded to the host, and a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region grown over the seed layer. A variation in index of refraction in a direction perpendicular to a growth direction of the semiconductor structure is disposed between the host and the light emitting layer.

Abstract translation: 本发明的实施方案包括包含与主体结合的主体和种子层的基板，以及包括设置在种子层上生长的n型区域和p型区域之间的发光层的半导体结构。 在垂直于半导体结构的生长方向的方向上的折射率的变化设置在主体和发光层之间。

公开(公告)号：WO2010015401A3

公开(公告)日：2010-05-14

申请号：PCT/EP2009005694

申请日：2009-08-06

Applicant: SOITEC SILICON ON INSULATOR ,  LETERTRE FABRICE ,  MAZURE CARLOS ,  KRAMES MICHAEL R ,  MCLAURIN MELVIN B ,  GARDNER NATHAN F

Inventor： LETERTRE FABRICE ,  MAZURE CARLOS ,  KRAMES MICHAEL R ,  MCLAURIN MELVIN B ,  GARDNER NATHAN F

IPC: H01L21/324 ,  B01J3/00 ,  B01J3/06 ,  H01L21/20 ,  H01L33/00 ,  H01L33/32

CPC classification number: H01L21/2007 ,  H01L21/02422 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/3245 ,  H01L33/0095

Abstract: The present invention relates to a method for relaxing a strained material layer, comprising depositing a first low-viscosity layer comprising a first compliant material on the strained material layer, depositing a second low-viscosity layer comprising a second compliant material on the strained material layer to form a first sandwiched structure and subjecting the first sandwiched structure to a heat treatment such that reflow of the first and the second low-viscosity layers is caused thereby at least partly relaxing the strained material layer.

Abstract translation: 本发明涉及用于松弛应变材料层的方法，该方法包括在应变材料层上沉积包括第一柔性材料的第一低粘度层，在应变材料层上沉积包括第二柔性材料的第二低粘度层 以形成第一夹层结构并使第一夹层结构经受热处理，从而引起第一和第二低粘度层的回流，从而至少部分地松弛应变材料层。