公开(公告)号：WO1992012528A1

公开(公告)日：1992-07-23

申请号：PCT/JP1992000015

申请日：1992-01-10

Applicant: HITACHI LIMITED ,  ICHIKAWA, Masakazu ,  HOSOKI, Shigeyuki ,  UCHIDA, Fumihiko ,  KATO, Shigeo ,  FUJISAKI, Yoshihisa ,  FUJISAKI, Sumiko ,  KIKUGAWA, Atsushi ,  IMURA, Ryo ,  AOI, Hajime ,  NAKAGAWA, Kiyokazu ,  MURAKAMI, Eiichi

Inventor： HITACHI LIMITED

IPC: H01J37/30

CPC classification number: G11B9/1436 ,  B82B3/00 ,  G01Q80/00 ,  G11B9/00 ,  G11B9/14 ,  G11B9/1418 ,  G11B9/1445 ,  G11B9/1463 ,  G11B9/1472 ,  G11B11/08 ,  G11B33/14 ,  H01J37/3056 ,  H01J37/3174 ,  H01J2237/31738 ,  H01J2237/31759 ,  Y10S977/856 ,  Y10S977/947

Abstract: A method of finely machining solid surface and, particularly, a novel method and apparatus for machining the surfaces of solid elements on an atomic scale in order to prepare very fine elements and for recording data at ultra-high density. A probe (1) having a sharp end is disposed being opposed to the surface of a sample (4) that is to be machined, a voltage is applied between the probe and the sample to form an electric field large enough to field-vaporize atoms (5) constituting the sample or to field-vaporize atoms (6) constituting the probe. Atoms constituting the sample are field-vaporized and are split off the sample surface or atoms constituting the probe are field-vaporized and are adhered onto the sample surface, thereby to finely machine the sample surface on an atomic scale. Furthermore, a voltage is applied like pulses at any desired position on the sample surface to generate field-vaporization between the probe and the sample while observing the sample surface on an atomic scale based on a surface observation method using a scanning tunnel microscope, in order to remove atoms one by one from the sample surface by field-vaporization.

公开(公告)号：WO1999016193A1

公开(公告)日：1999-04-01

申请号：PCT/JP1997003337

申请日：1997-09-19

Applicant: HITACHI, LTD. ,  KIMURA, Yoshinobu ,  MIYAO, Masanobu ,  NAKAGAWA, Kiyokazu ,  SUGII, Nobuyuki ,  MARUIZUMI, Takuya

Inventor： HITACHI, LTD.

IPC: H04B10/12

CPC classification number: H04B10/564 ,  G02B6/3636 ,  G02B6/3652 ,  G02B6/4202 ,  H01S5/0262 ,  H01S5/0264 ,  H01S5/0425 ,  H01S5/1228 ,  H04B10/291 ,  H04B10/504

Abstract: Optical signal communication equipment and optical communication system which can be suitably used even when the transmitting speed and capacity of information transmitted by using optical signals are increased. On the optical signal transmitting side, signal light is generated by causing induced emission in an active medium by supplying exciting light to the medium in accordance with transmitting signals. The exciting light is supplied to the active medium in such a way that naturally emitted light is made incident to a semiconductor layer and the component of the light having a specific wavelength is Bragg-reflected by modulating the refractive index of the semiconductor layer by impressing the voltage pulse correspdoning to the transmitting information upon the semiconductor layer, and then, the reflected light is supplied to the medium as the exciting light. Since the Bragg reflection and associated induced emission show excellent responsiveness to voltage signals having pulses widths of 1x10 second on shorter, an optical communication system which can transmit optical signals at a transmitting speed of up to 100 Gb/s can be realized.

Abstract translation: 即使当使用光信号发送的信息的发送速度和容量增加时，也可适当使用的光信号通信设备和光通信系统。 在光信号发送侧，根据发送信号，通过向有源介质引起感应发射，向介质供给激励光，从而产生信号光。 将激发光以这样的方式提供给有源介质，使得自然发射的光入射到半导体层，并且具有特定波长的光的分量通过调制半导体层的折射率而被布拉格反射， 电压脉冲对应于半导体层上的发送信息，然后将反射光作为激发光提供给介质。 由于布拉格反射和相关联的感应发射对较短的具有1×10 -9秒的脉冲宽度的电压信号具有优异的响应性，因此可以实现以高达100Gb / s的发送速度传输光信号的光通信系统 。

公开(公告)号：WO1996028852A1

公开(公告)日：1996-09-19

申请号：PCT/JP1995000435

申请日：1995-03-15

Applicant: HITACHI, LTD. ,  NAKAGAWA, Kiyokazu ,  NISHIDA, Akio ,  KIMURA, Yoshinobu ,  TAKAGI, Kazumasa

Inventor： HITACHI, LTD.

IPC: H01L33/00

CPC classification number: H01L33/34 ,  B82Y20/00 ,  H01S5/0262 ,  H01S5/0424 ,  H01S5/18319 ,  H01S5/18341 ,  H01S5/3427

Abstract: A semiconductor optical device which uses a mixed crystal comprising Ge, C, Sn, etc., of Group IV semiconductors having a different atomic radius from that of Si as a light emission layer, disposes light emission layers at a period of integral multiples of the half of the light emission wavelength, and separates the light emission layer from a light modulation region. Since a multi-layered structure of the Group IV semiconductors such as Si and Ge, C, Sn is used, local strain due to a difference in atomic radius increases light emission efficiency, and the multi-layered film functions as an interference device of light. Because only light with a wavelength twice this period can exist inside the multi-layered film, light emission efficiency can be increased. Further, since the multi-layered structure has a periodical structure which is integral multiples of the half of the light emission wavelength, the light emission intensity can be increased. Since the light emission region and the light modulation region are formed adjacent to each other on the same substrate, a semiconductor optical device capable of high-speed light modulation can be accomplished. Because this structure can extremely reduce lattice mismatching with the substrate, no limitation on a layer thickness such as a critical film thickness exists. Accordingly, a design freedom for a film thickness for confining light and carriers and a band discontinuity value can increase, and a light emission intensity can be improved to about ten times that with the prior art devices.

Abstract translation: 使用具有与Si的原子半径不同的第IV族半导体的Ge，C，Sn等的混晶作为发光层的半导体光学器件，以发光层的整数倍的周期配置发光层 一半的发光波长，并且将发光层与光调制区域分离。 由于使用诸如Si和Ge，C，Sn的IV族半导体的多层结构，因原子半径的差异导致的局部应变增加了发光效率，并且多层膜用作光的干涉装置 。 因为在多层膜内只能存在波长为两倍的波长的光，所以可以提高发光效率。 此外，由于多层结构具有作为发光波长的一半的整数倍的周期结构，所以可以提高发光强度。 由于发光区域和光调制区域在相同的基板上彼此相邻地形成，因此可以实现能够进行高速调光的半导体光学器件。 因为这种结构可以极大地减少与衬底的晶格失配，所以不存在诸如临界膜厚度等层厚度的限制。 因此，用于限制光和载流子的膜厚度的设计自由度和带不连续值可以增加，并且发光强度可以提高到现有技术装置的约10倍。