Abstract:
A recirculation system of a substrate support on which a semiconductor substrate is subjected to a multistep process in a vacuum chamber, the system comprising a substrate support having at least one liquid flow passage in a base plate thereof, an inlet and an outlet in fluid communication with the flow passage, a supply line in fluid communication with the inlet, and a return line in fluid communication with the outlet; a first recirculator providing liquid at temperature T 1 in fluid communication with the supply line and the return line; a second recirculator providing liquid at temperature T 2 in fluid communication with the supply line and the return line, temperature T 2 being at least 10°C above temperature T 1 ; a pre-cooling unit providing liquid at temperature T pc connected to the inlet and the outlet, temperature T pc being at least 10C below T 1 ; a pre-heating unit providing liquid at temperature T ph connected to the inlet and the outlet, temperature T ph being at least 10°C above T 2 ; a controller operable to selectively operate valves of the recirculation system to recirculate liquid between the flow passage and the first recirculator, the second recirculator, the pre-cooling unit or the pre-heating unit.
Abstract:
An apparatus for control of a temperature of a substrate has a temperaturecontrolled base, a heater, a metal plate, a layer of dielectric material. The heater is thermally coupled to an underside of the metal plate while being electrically insulated from the metal plate. A first layer of adhesive material bonds the metal plate and the heater to the top surface of the temperature controlled base. This adhesive layer is mechanically flexible, and possesses physical properties designed to balance the thermal energy of the heaters and an external process to provide a desired temperature pattern on the surface of the apparatus. A second layer of adhesive material bonds the layer of dielectric material to a top surface of the metal plate. This second adhesive layer possesses physical properties designed to transfer the desired temperature pattern to the surface of the apparatus. The layer of dielectric material forms an electrostatic clamping mechanism and supports the substrate.
Abstract:
A method of protecting a bond layer in a substrate support adapted for use in a plasma processing system. The method includes the steps of attaching an upper member of a substrate support to a lower member of a substrate support with a bonding material. An adhesive is applied to an outer periphery of the upper member and to an upper periphery of the lower member, and a protective ring is positioned around the outer periphery of the upper member and the upper periphery of the lower member. The protective ring is originally fabricated with dimensions that provide mechanical stability and workability. The protective ring is then machined to an exact set of final dimensions consistent with the design of the substrate support application.
Abstract:
Parasitic plasma in voids in a component of a plasma processing chamber can be eliminated by covering electrically conductive surfaces in an interior of the voids with a sleeve. The voids can be gas holes, lift pin holes, helium passages, conduits and/or plenums in chamber components such as an upper electrode and a substrate support.
Abstract:
A stand-alone performance recording system includes an enclosure or performance area adapted to be moved from a first location to a second location, and temporarily, semi-permanently or permanently set up at the second location for the purpose of recording the audio and/or visual aspects of an event performed within the enclosure. Digital audio and video recording are performed within the enclosure. A controlled environment is provided within the enclosure, and the recording system includes features that allow for the superposing and/or editing of multiple live and prerecorded audio and/or video inputs provided within the stand-alone enclosure during an event performed within the enclosure at whatever location is desired.
Abstract:
A thermal plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar thermal zone uses at least one Peltier device as a thermoelectric element. A substrate support assembly in which the thermal plate is incorporated includes an electrostatic clamping electrode layer and a temperature controlled base plate. Methods for manufacturing the thermal plate include bonding together ceramic or polymer sheets having planar thermal zones, positive, negative and common lines and vias.
Abstract:
A stand-alone performance recording system includes an enclosure or performance area adapted to be moved from a first location to a second location, and temporarily, semi-permanently or permanently set up at the second location for the purpose of recording the audio and/or visual aspects of an event performed within the enclosure. Digital audio and video recording are performed within the enclosure. A controlled environment is provided within the enclosure, and the recording system includes features that allow for the superposing and/or editing of multiple live and prerecorded audio and/or video inputs provided within the stand-alone enclosure during an event performed within the enclosure at whatever location is desired.
Abstract:
An apparatus for control of a temperature of a substrate has a temperaturecontrolled base, a heater, a metal plate, a layer of dielectric material. The heater is thermally coupled to an underside of the metal plate while being electrically insulated from the metal plate. A first layer of adhesive material bonds the metal plate and the heater to the top surface of the temperature controlled base. This adhesive layer is mechanically flexible, and possesses physical properties designed to balance the thermal energy of the heaters and an external process to provide a desired temperature pattern on the surface of the apparatus. A second layer of adhesive material bonds the layer of dielectric material to a top surface of the metal plate. This second adhesive layer possesses physical properties designed to transfer the desired temperature pattern to the surface of the apparatus. The layer of dielectric material forms an electrostatic clamping mechanism and supports the substrate.
Abstract:
Parasitic plasma in voids in a component of a plasma processing chamber can be eliminated by covering electrically conductive surfaces in an interior of the voids with a sleeve. The voids can be gas holes, lift pin holes, helium passages, conduits and/or plenums in chamber components such as an upper electrode and a substrate support.
Abstract:
A thermal plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar thermal zone uses at least one Peltier device as a thermoelectric element. A substrate support assembly in which the thermal plate is incorporated includes an electrostatic clamping electrode layer and a temperature controlled base plate. Methods for manufacturing the thermal plate include bonding together ceramic or polymer sheets having planar thermal zones, positive, negative and common lines and vias.