OPTICAL ASSEMBLY WITH SUPPRESSION OF DEGRADATION
    1.
    发明申请
    OPTICAL ASSEMBLY WITH SUPPRESSION OF DEGRADATION 审中-公开
    光学组件抑制降解

    公开(公告)号:WO2013010806A1

    公开(公告)日:2013-01-24

    申请号:PCT/EP2012/063101

    申请日:2012-07-05

    Abstract: The invention relates to an optical assembly, in particular a projection exposure apparatus for EUV lithography, comprising: a beam generating system for generating radiation (6) at an operating wavelength,at least one optical element (13, 14) which is subjected to the radiation (6) and is arranged in a residual gas atmosphere, and a feed device for feeding at least one gaseous constituent into the residual gas atmosphere in order to suppress a degradation of the surface (14a) of the optical element (14) that is induced by the radiation, wherein either a beam diameter (d) of the radiation (6) at the surface of the optical element, in particular at the surfaces of all optical elements of the optical assembly, lies above a threshold value (d c ) so that a suppression of the degradation by the gaseous constituent is effective, or the beam diameter (d) at the surface (14a) of the optical element (14) lies below the threshold value (d c ) so that a reduction of the effectiveness of the suppression of degradation occurs,and at least one further device (25, 27) for the improved suppression of the degradation of the surface (14a) is assigned to the optical element (14).The invention also relates to an associated method for operating an optical assembly.

    Abstract translation: 本发明涉及一种光学组件,特别是用于EUV光刻的投影曝光设备,包括:用于产生工作波长的辐射(6)的光束产生系统,至少一个光学元件(13,14) 辐射(6)并且设置在残留气体气氛中,以及用于将至少一种气态成分供给到残留气体气氛中的进料装置,以便抑制光学元件(14)的表面(14a)的劣化, 其特征在于光学组件的所有光学元件的表面处的辐射(6)的光束直径(d)在光学元件的表面处,特别是在阈值(dc)之上,所以光束直径(d) 抑制气态组分的降解是有效的,或者光学元件(14)的表面(14a)处的光束直径(d)低于阈值(dc),使得降低 suppres 并且至少一个用于改善对表面(14a)的降解的抑制的装置(25,27)被分配给光学元件(14)。本发明还涉及一种用于操作 光学组件。

    PROJECTION EXPOSURE APPARATUS
    3.
    发明申请
    PROJECTION EXPOSURE APPARATUS 审中-公开
    投影曝光装置

    公开(公告)号:WO2012028569A9

    公开(公告)日:2012-06-07

    申请号:PCT/EP2011064796

    申请日:2011-08-29

    CPC classification number: G03F7/70191 G03F7/70891 G21K1/062 H05B6/10

    Abstract: The invention relates to a projection exposure apparatus (11) for semiconductor lithography comprising optical elements (1, 18), wherein at least one of the optical elements (1) has means (2) for contact lessly producing electric currents in the optical element (1) which are suitable for heating the at least one optical element (1) at least in regions.

    Abstract translation: 本发明涉及一种用于半导体光刻的投影曝光装置(11),其包括光学元件(1,18),其中至少一个光学元件(1)具有用于在光学元件中较少产生电流的装置(2) 1),其适于至少在区域中加热所述至少一个光学元件(1)。

    RETICLE, RETICLE-CHUCK, RETICLE POSITIONING SYSTEM AND OPTICAL SYSTEM
    4.
    发明申请
    RETICLE, RETICLE-CHUCK, RETICLE POSITIONING SYSTEM AND OPTICAL SYSTEM 审中-公开
    反馈,伪装,虚拟定位系统和光学系统

    公开(公告)号:WO2013174398A1

    公开(公告)日:2013-11-28

    申请号:PCT/EP2012/002159

    申请日:2012-05-22

    CPC classification number: G03F7/707 G03F1/38

    Abstract: A reticle (18) for use in a microlithographic projection exposure apparatus, comprises a reticle body (42) containing a pattern (16) and reticle coupling means (36), by means of which the reticle body (42) can be detachably coupled with a reticle-chuck (30). The reticle coupling means (36) are adapted such that the coupling of the reticle (18) with the reticle-chuck (30) can be effected by magnetic forces. Further, a Reticle-chuck (30) is provided which comprises a support unit (60) and chuck coupling means (38), by means of which a reticle (18) can be detachably coupled with the support unit (60). The chuck coupling means (38) are adapted such that the coupling of the reticle (18) with the support unit (60) can be effected by magnetic forces. Furthermore, a reticle positioning system (28) is described, wherein such a reticle (18) and such a reticle-chuck (30) are coupled to form a chuck-unit (32). Finally, an optical system having an illumination device (12) for illuminating an optical reticle (18) containing a pattern (16) and a projection objective (14) for imaging the reticle pattern (16) is provided with such a reticle positioning system (28).

    Abstract translation: 一种用于微光刻投影曝光设备的掩模版(18),包括一个包含图案(16)和标线片耦合装置(36)的标线本体(42),通过该掩模体(42)可以将标线本体(42)可拆卸地与 标线盘卡盘(30)。 标线片耦合装置(36)适于使得光罩(18)与光罩卡盘(30)的耦合可以通过磁力来实现。 此外,提供了一种标线卡盘(30),其包括支撑单元(60)和卡盘联接装置(38),通过该卡盘联接装置可以将分划板(18)可拆卸地联接到支撑单元(60)。 卡盘联接装置(38)适于使得光罩(18)与支撑单元(60)的联接可以通过磁力来实现。 此外,描述了一个掩模版定位系统(28),其中这种掩模版(18)和这种光罩卡盘(30)联接以形成卡盘单元(32)。 最后,具有用于照射包含图案(16)的光学掩模版(18)的照明装置(12)和用于使掩模图案(16)成像的投影物镜(14)的光学系统设置有这样的掩模版定位系统 28)。

    DETECTION OF CONTAMINATING SUBSTANCES IN AN EUV LITHOGRAPHY APPARATUS
    5.
    发明申请
    DETECTION OF CONTAMINATING SUBSTANCES IN AN EUV LITHOGRAPHY APPARATUS 审中-公开
    在EUV光刻设备中检测污染物质

    公开(公告)号:WO2010022815A1

    公开(公告)日:2010-03-04

    申请号:PCT/EP2009/004811

    申请日:2009-07-03

    CPC classification number: G03F7/70916 G03F7/7085 G03F7/70983

    Abstract: The invention relates to an EUV lithography apparatus (1), comprising: a housing (1a) enclosing an interior (15), at least one reflective optical element (5, 6, 8, 9, 10, 14.1 to 14.6) arranged in the interior (15), a vacuum generating unit (1b) for generating a residual gas atmosphere in the interior (15), and also a residual gas analyzer (18a, 18b) for detecting at least one contaminating substance (17a) in the residual gas atmosphere. The residual gas analyzer (18a) has a storage device (21) for storing the contaminating substance (17a). The invention also relates to a method for detecting at least one contaminating substance by residual gas analysis of a residual gas atmosphere of an EUV lithography apparatus (1) having a housing (1a) having an interior (15), in which at least one reflective optical element (5, 6, 8, 9, 10, 14.1 to 14.6), is arranged, wherein the contaminating substance (17a) is stored in a storage device (21) in order to carry out the residual gas analysis.

    Abstract translation: 本发明涉及一种EUV光刻设备(1),包括:一个封装内部(15)的外壳(1a),至少一个反射光学元件(5,6,8,9,10,14.1至14.6) 内部(15),用于在内部(15)中产生残余气体气氛的真空发生单元(1b),以及用于检测残留气体中的至少一种污染物质(17a)的残留气体分析器(18a,18b) 大气层。 残留气体分析器(18a)具有用于储存污染物质(17a)的储存装置(21)。 本发明还涉及一种用于通过具有具有内部(15)的壳体(1a)的EUV光刻设备(1)的残余气体气体的残余气体分析来检测至少一种污染物质的方法,其中至少一个反射 配置光学元件(5,6,8,9,10,14.1至14.6),其中污染物质(17a)被存储在存储装置(21)中以便进行残留气体分析。

    PROJECTION EXPOSURE APPARATUS
    7.
    发明申请
    PROJECTION EXPOSURE APPARATUS 审中-公开
    投影曝光装置

    公开(公告)号:WO2012028569A1

    公开(公告)日:2012-03-08

    申请号:PCT/EP2011/064796

    申请日:2011-08-29

    CPC classification number: G03F7/70191 G03F7/70891 G21K1/062 H05B6/10

    Abstract: The invention relates to a projection exposure apparatus (11) for semiconductor lithography comprising optical elements (1, 18), wherein at least one of the optical elements (1) has means (2) for contactlessly producing electric currents in the optical element (1) which are suitable for heating the at least one optical element (1) at least in regions.

    Abstract translation: 本发明涉及一种用于包括光学元件(1,18)的半导体光刻的投影曝光设备(11),其中至少一个光学元件(1)具有用于在光学元件(1)中非接触地产生电流的装置(2) ),其适于至少在区域中加热所述至少一个光学元件(1)。

    OPTICAL ARRANGEMENT IN A PROJECTION EXPOSURE APPARATUS FOR EUV LITHOGRAPHY
    8.
    发明申请
    OPTICAL ARRANGEMENT IN A PROJECTION EXPOSURE APPARATUS FOR EUV LITHOGRAPHY 审中-公开
    投影曝光装置的光学布置

    公开(公告)号:WO2011029761A1

    公开(公告)日:2011-03-17

    申请号:PCT/EP2010/062819

    申请日:2010-09-01

    Abstract: The present invention concerns an optical arrangement, in particular in a projection exposure apparatus for EUV lithography. In an aspect an optical arrangement has a housing (100, 200, 550, 780) in which at least one optical element (810,821,822,830,840) is arranged, and at least one subhousing (811, 823, 824, 831, 841) which is arranged within said housing and which surrounds at least one beam incident on the optical element in operation of the optical system, wherein the internal space of the subhousing is in communication with the external space of the subhousing by way of at least one opening, wherein provided in the region of the opening is at least one flow guide portion (861-867) which deflects a flushing gas flow passing through the opening from the internal space to the external space of the subhousing, at least once in its direction.

    Abstract translation: 本发明涉及一种光学装置,特别是在用于EUV光刻的投影曝光装置中。 在一个方面,光学装置具有其中布置有至少一个光学元件(810,821,822,830,840)的壳体(100,200,550,780),以及布置有至少一个子座(811,823,824,831,841) 在所述壳体内并且围绕在所述光学系统的操作中入射到所述光学元件上的至少一个光束,其中所述底座的内部空间通过至少一个开口与所述底座的外部空间连通,其中设置在 开口的区域是至少一个流动引导部分(861-867),其将从内部空间通过开口的冲洗气体流向副井孔的外部空间偏转至少一个方向。

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