Abstract:
The invention relates to an optical assembly, in particular a projection exposure apparatus for EUV lithography, comprising: a beam generating system for generating radiation (6) at an operating wavelength,at least one optical element (13, 14) which is subjected to the radiation (6) and is arranged in a residual gas atmosphere, and a feed device for feeding at least one gaseous constituent into the residual gas atmosphere in order to suppress a degradation of the surface (14a) of the optical element (14) that is induced by the radiation, wherein either a beam diameter (d) of the radiation (6) at the surface of the optical element, in particular at the surfaces of all optical elements of the optical assembly, lies above a threshold value (d c ) so that a suppression of the degradation by the gaseous constituent is effective, or the beam diameter (d) at the surface (14a) of the optical element (14) lies below the threshold value (d c ) so that a reduction of the effectiveness of the suppression of degradation occurs,and at least one further device (25, 27) for the improved suppression of the degradation of the surface (14a) is assigned to the optical element (14).The invention also relates to an associated method for operating an optical assembly.
Abstract:
An arrangement for use in a projection exposure tool (100) for microlithography comprises a reflective optical element (10; 110) and a radiation detector (30; 32; 130). The reflective optical element (10; 110) comprises a carrier element (12) guaranteeing the mechanical strength of the optical element (10; 110) and a reflective coating (18) disposed on the carrier element (12) for reflecting a use radiation (20a). The carrier element (12) is made of a material which upon interaction with the use radiation (20a) emits a secondary radiation (24) the wavelength of which differs from the wavelength of the use radiation (20a), and the radiation detector (30; 32; 130) is configured to detect the secondary radiation (24).
Abstract:
The invention relates to a projection exposure apparatus (11) for semiconductor lithography comprising optical elements (1, 18), wherein at least one of the optical elements (1) has means (2) for contact lessly producing electric currents in the optical element (1) which are suitable for heating the at least one optical element (1) at least in regions.
Abstract:
A reticle (18) for use in a microlithographic projection exposure apparatus, comprises a reticle body (42) containing a pattern (16) and reticle coupling means (36), by means of which the reticle body (42) can be detachably coupled with a reticle-chuck (30). The reticle coupling means (36) are adapted such that the coupling of the reticle (18) with the reticle-chuck (30) can be effected by magnetic forces. Further, a Reticle-chuck (30) is provided which comprises a support unit (60) and chuck coupling means (38), by means of which a reticle (18) can be detachably coupled with the support unit (60). The chuck coupling means (38) are adapted such that the coupling of the reticle (18) with the support unit (60) can be effected by magnetic forces. Furthermore, a reticle positioning system (28) is described, wherein such a reticle (18) and such a reticle-chuck (30) are coupled to form a chuck-unit (32). Finally, an optical system having an illumination device (12) for illuminating an optical reticle (18) containing a pattern (16) and a projection objective (14) for imaging the reticle pattern (16) is provided with such a reticle positioning system (28).
Abstract:
The invention relates to an EUV lithography apparatus (1), comprising: a housing (1a) enclosing an interior (15), at least one reflective optical element (5, 6, 8, 9, 10, 14.1 to 14.6) arranged in the interior (15), a vacuum generating unit (1b) for generating a residual gas atmosphere in the interior (15), and also a residual gas analyzer (18a, 18b) for detecting at least one contaminating substance (17a) in the residual gas atmosphere. The residual gas analyzer (18a) has a storage device (21) for storing the contaminating substance (17a). The invention also relates to a method for detecting at least one contaminating substance by residual gas analysis of a residual gas atmosphere of an EUV lithography apparatus (1) having a housing (1a) having an interior (15), in which at least one reflective optical element (5, 6, 8, 9, 10, 14.1 to 14.6), is arranged, wherein the contaminating substance (17a) is stored in a storage device (21) in order to carry out the residual gas analysis.
Abstract:
Um eine schonendere Reinigung von optischen Komponenten (35) innerhalb einer EUV- Lithographievorrichtung zu erlauben, wird ein Reinigungsmodul für eine EUV- Lithographievorrichtung mit einer Zuleitung für molekularen Wasserstoff und einem Heizdraht zur Herstellung von atomarem Wasserstoff und Wasserstoffionen zu Reinigungszwecken vorgeschlagen, bei dem in Strömungsrichtung des Wasserstoffs (31, 32) hinter dem Heizdraht (29) Mittel (33) zum Anlegen eines elektrischen und/oder magnetischen Feldes angeordnet sind. Die Mittel können als Umlenkeinheit sowie als Filtereinheit und/oder Beschleunigungseinheit für den Ionenstrahl (32) ausgebildet sein.
Abstract:
The invention relates to a projection exposure apparatus (11) for semiconductor lithography comprising optical elements (1, 18), wherein at least one of the optical elements (1) has means (2) for contactlessly producing electric currents in the optical element (1) which are suitable for heating the at least one optical element (1) at least in regions.
Abstract:
The present invention concerns an optical arrangement, in particular in a projection exposure apparatus for EUV lithography. In an aspect an optical arrangement has a housing (100, 200, 550, 780) in which at least one optical element (810,821,822,830,840) is arranged, and at least one subhousing (811, 823, 824, 831, 841) which is arranged within said housing and which surrounds at least one beam incident on the optical element in operation of the optical system, wherein the internal space of the subhousing is in communication with the external space of the subhousing by way of at least one opening, wherein provided in the region of the opening is at least one flow guide portion (861-867) which deflects a flushing gas flow passing through the opening from the internal space to the external space of the subhousing, at least once in its direction.
Abstract:
Die Erfindung betrifft eine EUV-Lithographievorrichtung, umfassend: eine Beleuchtungseinrichtung zum Beleuchten einer Maske an einer Beleuchtungsposition in der EUV-Lithographievorrichtung, sowie eine Projektionseinrichtung zur Abbildung einer an der Maske vorgesehenen Struktur auf ein lichtempfindliches Substrat. Die EUV-Lithographievorrichtung weist eine Bearbeitungseinrichtung (15) zur bevorzugt ortsaufgelösten Bearbeitung eines optischen Elements (6a), insbesondere der Maske, an einer Bearbeitungsposition in der EUV-Lithographievorrichtung auf. Zur Aktivierung mindestens eines Gasbestandteils des Gasstroms (27) umfasst die Bearbeitungseinrichtung (15) eine Strahlungsquelle zur Erzeugung von Strahlung, einen Teilchengenerator (30) zur Erzeugung eines Teilchenstrahls, insbesondere eines Elektronenstrahls (30a), und/oder einen Hochfrequenzgenerator.
Abstract:
An arrangement for use in a projection exposure tool (100) for microlithography comprises a reflective optical element (10; 110) and a radiation detector (30; 32; 130). The reflective optical element (10; 110) comprises a carrier element (12) guaranteeing the mechanical strength of the optical element (10; 110) and a reflective coating (18) disposed on the carrier element (12) for reflecting a use radiation (20a). The carrier element (12) is made of a material which upon interaction with the use radiation (20a) emits a secondary radiation (24) the wavelength of which differs from the wavelength of the use radiation (20a), and the radiation detector (30; 32; 130) is configured to detect the secondary radiation (24).