摘要:
Described are methods and apparatuses, including computer program products, for igniting and/or sustaining a plasma in a reactive gas generator. Power is provided from an ignition power supply to a plasma ignition circuit. A pre-ignition signal of the plasma ignition circuit is measured. The power provided to the plasma ignition circuit is adjusted based on the measured pre-ignition signal and an adjustable pre-ignition control signal. The adjustable pre-ignition control signal is adjusted after a period of time has elapsed.
摘要:
A particle trap for a remote plasma source includes a body structure having an inlet for coupling to a chamber of a remote plasma source and an outlet for coupling to a process chamber inlet. The particle trap for a remote plasma source also includes a gas channel formed in the body structure and in fluid communication with the body structure inlet and the body structure outlet. The gas channel can define a path through the body structure that causes particles in a gas passing from a first portion of the channel to strike a wall that defines a second portion of the gas channel at an angle relative to a surface of the wall. A coolant member can be in thermal communication with the gas channel.
摘要:
A system for dividing a single flow into two or more secondary flows of desired ratios, including an inlet adapted to receive the single flow, at least two secondary flow lines connected to the inlet, an input device adapted to receive at least one desired ratio of flow, at least one in-situ process monitor providing measurements of products produced by each of the flows lines, and a controller connected to the input device and the in-situ process monitor. The controller is programmed to receive the desired ratio of flow through the input device, receive the product measurements from the in-situ process monitor, and calculate a corrected ratio of flow based upon the desired ratio of flow and the product measurements. If the product measurements are not equal, then the corrected ratio of flow will be different than the desired ratio of flow.
摘要:
A plasma source includes a ring plasma chamber, a primary winding around an exterior of the ring plasma chamber and multiple ferrites, wherein the ring plasma chamber passes through each of the ferrites. A system and method for generating a plasma are also described.
摘要:
A mass flow rate sensor uses a Reynolds number correction function to compensate for errors in a bypass ratio of the sensor for all gases, based on the fact that all bypass errors are functions of Reynolds number. The sensor includes a sensor tube and a bypass tube dividing flow, wherein a bypass ratio of the sensor equals a total flow rate through the sensor divided by a flow rate through just the sensor tube. Heater elements heat an upstream portion and a downstream portion of the sensor tube, and a circuit is connected to the heater elements for producing a voltage based upon a difference in resistance between the heater elements. The voltage is calibrated based on known flow rates of a reference gas, and the flow rate through the sensor is based upon the calibrated voltage multiplied by a multi-gas correction function and a Reynolds number correction function.
摘要:
A mass flow rate sensor uses a Reynolds number correction function to compensate for errors in a bypass ratio of the sensor for all gases, based on the fact that all bypass errors are functions of Reynolds number. The sensor includes a sensor tube and a bypass tube dividing flow, wherein a bypass ratio of the sensor equals a total flow rate through the sensor divided by a flow rate through just the sensor tube. Heater elements heat an upstream portion and a downstream portion of the sensor tube, and a circuit is connected to the heater elements for producing a voltage based upon a difference in resistance between the heater elements. The voltage is calibrated based on known flow rates of a reference gas, and the flow rate through the sensor is based upon the calibrated voltage multiplied by a multi-gas correction function and a Reynolds number correction function.
摘要:
A system for producing excited gases for introduction to a. semiconductor processing chamber. The system includes a plasma source (104) for generating a plasma. The plasma source includes a plasma chamber (156) and a gas inlet (126) for receiving process gases from a gas source (116). A gas flow rate controller (108) is coupled to the gas inlet for controlling an inlet flow rate of the process gases from the gas source to the plasma chamber via the gas inlet. The system includes a control loop for detecting a transition from a first process gas. to a second process gas and for adjusting the inlet flow rate of the second process gas from about 0 seem to about 10,000 seem over a period of time greater than about 300 milliseconds to maintain transient heat flux loads applied by the plasma to an inner surface of the plasma chamber below a vaporization temperature of the plasma chamber.
摘要:
A system (200) and method are provided for delivering power to a dynamic load (260). The system includes a power supply (210) providing DC power having a substantially constant power open loop response, a power amplifier (220) for converting the DC power to RF power, a sensor (240) for measuring voltage, current and phase angle between voltage and current vectors associated with the RF power, an electrically controllable impedance matching system (250, 252) to modify the impedance of the power amplifier to at least a substantially matched impedance of the dynamic load (260), and a controller (230) for controlling the electrically controllable impedance matching system (200). The system (200) further includes a sensor calibration measuring module for determining power delivered by the power amplifier, an electronic matching system calibration module (252) for determining power delivered to the dynamic load, (260) and a power dissipation module for calculating power dissipated in the electrically controllable impedance matching system.
摘要:
A system and method are described that control the amount of precursor that is delivered to a process chamber by precisely measuring the mole fraction of the gas mixture being delivered. A gas delivery system includes a delivery chamber, a precursor inlet valve, a carrier inlet valve, an outlet valve, and a controller. The controller controls the opening and closing of the precursor inlet valve, the carrier inlet valve, and the outlet valve, so as to introduce a desired amount of a precursor gas and a carrier gas into the delivery chamber, to generate a gas mixture having a desired mole fraction of the precursor gas, and to deliver to the process chamber the gas mixture having the desired mole fraction of the precursor gas.
摘要:
A system for dividing a single flow into two or more secondary flows of desired ratios, including an inlet adapted to receive the single flow, at least two secondary flow lines connected to the inlet, an input device adapted to receive at least one desired ratio of flow, at least one in-situ process monitor providing measurements of products produced by each of the flows lines, and a controller connected to the input device and the in-situ process monitor. The controller is programmed to receive the desired ratio of flow through the input device, receive the product measurements from the in-situ process monitor, and calculate a corrected ratio of flow based upon the desired ratio of flow and the product measurements. If the product measurements are not equal, then the corrected ratio of flow will be different than the desired ratio of flow.