Abstract:
A method of controlling wafer critical dimension (CD) uniformity on a track lithography tool includes obtaining a CD map for a wafer. The CD map includes a plurality of CD data points correlated with a multi-zone heater geometry map. The multi-zone heater includes a plurality of heater zones. The method also includes determining a CD value for a first heater zone of the plurality of heater zones based on one or more of the CD data points and computing a difference between the determined CD value for the first heater zone and a target CD value for the first heater zone. The method further includes determining a temperature variation for the first heater zone based, in part, on the computed difference and a temperature sensitivity of a photoresist deposited on the wafer and modifying a temperature of the first heater zone based, in part, on the temperature variation.
Abstract:
A device for detection of a semiconductor process liquid is provided. The device includes a light source adapted to generate a light beam and a digital optical sensor to detect the light beam. A nozzle is adapted to support the semiconductor process liquid and transmit the light beam. The nozzle and the source are arranged to refract the beam in a first direction while the beam passes through a gas disposed in the nozzle. The nozzle and source are arranged to refract the beam in a second direction while the beam passes through the liquid.
Abstract:
An integrated thermal unit comprising a housing; a bake station positioned within the housing, the bake station comprising a bake plate configured to heat a substrate supported on a surface of the bake plate; a chill station positioned within the housing, the chill station comprising a chill plate configured to cool a substrate supported on a surface of the chill plate; and a substrate receiving station positioned within the housing, the substrate receiving station configured to hold a substrate; wherein the bake station, chill station and substrate receiving station are arranged in a vertical stack within the housing. In some embodiments the integrated thermal unit further comprises a substrate transfer shuttle positioned within the housing and adapted to transfer substrates between the substrate receiving station, bake station and chill stations.
Abstract:
Systems, devices and methods of measuring a flow of a liquid stream for a semiconductor process are provided. The liquid stream is delivered through a liquid delivery nozzle. The nozzle is adapted to deliver the liquid stream for the semiconductor process. The free stream extends from an upstream location near the nozzle to a downstream location. The stream is marked at the upstream location and measured at the downstream location to determine the flow.
Abstract:
A system for measuring substrate concentricity includes a substrate support member adapted to rotate a substrate around a substantially vertical axis. The substrate includes a mounting surface and a process surface. The system also includes a spin cup positioned below the substrate and a translatable arm mounted a predetermined distance above the process surface of the substrate. The translatable arm is adapted to translate along a radius of the substrate. The system further includes an optical emitter mounted on the translatable arm and an optical detector mounted on the translatable arm.
Abstract:
A substrate heater comprising a bake plate having an upper surface, a lower surface and a peripheral side surface extending between the upper and lower surfaces, the bake plate including at least one heating element, at least one temperature sensor and a plurality of wires including at least one wire coupled to the heating element and at least one wire coupled to the temperature sensor; a shield spaced apart from and generally surrounding the lower and peripheral side surfaces of the bake plate, the shield having an interior upper surface facing the lower surface of the bake plate, an interior side surface facing the peripheral side surface of the bake plate and a lower surface opposite the interior upper surface; a patterned signal layer formed on the lower surface of the shield, wherein the plurality of wires are electrically coupled to a corresponding plurality of signal traces formed in the patterned signal layer; and a connector, electrically coupled to the plurality of signal traces in the patterned signal layer, adapted to facilitate electrical connections to the plurality of wires.
Abstract:
A method of controlling wafer critical dimension (CD) uniformity on a track lithography tool includes obtaining a CD map for a wafer (432) The CD map includes a plurality of CD data points correlated with a multi-zone heater geometry map (434) The multi-zone heater includes a plurality of heater zones The method also includes determining a CD value for a first heater zone of the plurality of heater zones based on one or more of the CD data points and computing a difference between the determined CD value for the first heater zone and a target CD value for the first heater zone (438) The method further includes determining a temperature variation for the first heater zone based, in part, on the computed difference and a temperature sensitivity of a photoresist deposited on the wafer an modifying a temperature of the first heater zone based, in part, on the temperature variation (440)
Abstract:
A device for detection of a semiconductor process liquid is provided. The device includes a light source adapted to generate a light beam and a digital optical sensor to detect the light beam. A nozzle is adapted to support the semiconductor process liquid and transmit the light beam. The nozzle and the source are arranged to refract the beam in a first direction while the beam passes through a gas disposed in the nozzle. The nozzle and source are arranged to refract the beam in a second direction while the beam passes through the liquid.
Abstract:
An integrated thermal unit comprising a housing; a bake station positioned within the housing, the bake station comprising a bake plate configured to heat a substrate supported on a surface of the bake plate; a chill station positioned within the housing, the chill station comprising a chill plate configured to cool a substrate supported on a surface of the chill plate; and a substrate receiving station positioned within the housing, the substrate receiving station configured to hold a substrate; wherein the bake station, chill station and substrate receiving station are arranged in a vertical stack within the housing. In some embodiments the integrated thermal unit further comprises a substrate transfer shuttle positioned within the housing and adapted to transfer substrates between the substrate receiving station, bake station and chill stations.
Abstract:
An apparatus for monitoring a position of a semiconductor process fluid interface in a dispense nozzle includes an extended optical source adapted to provide an optical beam propagating along an optical path. The optical beam is characterized by a path width measured in a first direction aligned with a dispense direction. The apparatus also includes an optical detector coupled to the optical path and adapted to detect at least a portion of the optical beam and a dispense nozzle disposed along the optical path at a location between the extended optical source and the optical detector. The apparatus further includes a nozzle positioning member coupled to the dispense nozzle and adapted to translate the dispense nozzle in the first direction.