公开(公告)号：WO2006036433A2

公开(公告)日：2006-04-06

申请号：PCT/US2005/030880

申请日：2005-08-30

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L. P. ,  WU, Wei ,  TONG, William M, ,  GAO, Jun ,  PICCIOTTO, Carl E,

Inventor： WU, Wei ,  TONG, William M, ,  GAO, Jun ,  PICCIOTTO, Carl E,

IPC: G03F7/00

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

Abstract: An imprint apparatus (100, 100', 200, 220) and method 300 employ an effective pressure P eff in imprint lithography. The imprint apparatus (100, 100', 200, 220) includes a compressible chamber (111) that encloses an imprint mold (120, 228a) having a mold pattern (122) and a sample (130, 228b) to be imprinted (300). The chamber (111) is compressed (330, 340, 350) to imprint (360) the mold pattern (122) on the sample (130, 228b). The mold (120, 228a) is pressed (350) against the sample (130, 228b) with the effective pressure P eff . The effective pressure P eff is controlled by a selected ratio A cavity /A contact of a cavity area A cavity of the chamber (111) to a contact area A contact between the mold (120, 228a) and the sample (130, 228b).

Abstract translation: 压印装置（100,100'，200,220）和方法300在压印光刻中使用有效压力P eff。 压印装置（100,100'，200,220）包括可压缩室（111），其包围具有模具图案（122）和待压印的样本（130,228b）的压印模具（120,228a） ）。 腔室（111）被压缩（330,340,350）以将模具图案（122）压印（360）在样本（130,228b）上。 将模具（120,228a）以有效压力P eff按压（350）在样品（130,228b）上。 有效压力P eff由空腔区域A cavity的选定比例A cavity / A sub contact控制， （111）向模具（120,228a）和样品（130,228b）之间的接触区域接触。

公开(公告)号：WO2010087852A1

公开(公告)日：2010-08-05

申请号：PCT/US2009/032721

申请日：2009-01-30

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  FIORENTINO, Marco ,  TONG, William M. ,  KUEKES, Philip J. ,  YANG, Jianhua

Inventor： FIORENTINO, Marco ,  TONG, William M. ,  KUEKES, Philip J. ,  YANG, Jianhua

IPC: G11C8/10 ,  H01L29/86 ,  H01L27/088

CPC classification number: G11C8/10 ,  G11C13/0007 ,  G11C13/0023 ,  G11C2213/32 ,  H01L27/2436 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146

Abstract: A decoding structure employs a main terminal (130), a first memristive switch (112) connected between the main terminal (130) and a first addressable terminal (132), and a second memristive switch (114) connected between the main terminal (130) and a second addressable terminal (134). The second memristive switch (114) is oriented so that a voltage polarity on the main terminal (130) that tends to turn the first memristive switch (112) on tends to turn the second memristive switch (114) off.

Abstract translation: 解码结构采用主端子（130），连接在主端子（130）和第一可寻址端子（132）之间的第一忆阻开关（112）和连接在主端子（130）之间的第二忆阻开关（114） ）和第二可寻址终端（134）。 第二忆阻开关（114）的取向使得容易使第一忆阻开关（112）转动的主端子（130）上的电压极性倾向于使第二忆阻开关（114）转动。

公开(公告)号：WO2010074685A1

公开(公告)日：2010-07-01

申请号：PCT/US2008/088225

申请日：2008-12-23

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  LI, Zhiyong ,  OU, Fung Suong ,  TONG, William, M.

Inventor： LI, Zhiyong ,  OU, Fung Suong ,  TONG, William, M.

IPC: H01L27/115 ,  H01L21/8247 ,  H01L21/265

CPC classification number: G11C13/0011 ,  B82Y10/00 ,  G11C11/56 ,  G11C13/00 ,  G11C13/0002 ,  G11C13/0069 ,  G11C13/02 ,  G11C13/025 ,  G11C2013/009 ,  G11C2213/35 ,  G11C2213/55 ,  G11C2213/56 ,  H01L45/08 ,  H01L45/1206 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/146

Abstract: A memristive device (400) includes: a first electrode (405); a second electrode (425); a memristive matrix (415) interposed between the first electrode (405) and the second electrode (425); a porous dopant diffusion element (410) in physical contact with the memristive matrix (415) and in proximity to the first electrode (405) and the second electrode (425); and a first mobile dopant species which moves through the porous dopant diffusion element (410) in response to a programming electrical field. A method for using a memristive device (400) having a porous dopant diffusion element (410) includes applying a voltage bias to generate a programming electrical field such that dopants move through the porous dopant diffusion element (410), thereby changing the distribution of dopants within a memristive matrix (415) to form a first state; removing the voltage bias, the dopants being substantially immobile in the absence of the programming electrical field; and applying a reading energy to the memristive device (400) to sense the first state.

Abstract translation: 忆阻器（400）包括：第一电极（405）; 第二电极（425）; 夹在第一电极（405）和第二电极（425）之间的忆阻矩阵（415）; 与所述忆阻矩阵（415）物理接触并且接近所述第一电极（405）和所述第二电极（425）的多孔掺杂剂扩散元件（410）; 以及响应于编程电场而移动通过多孔掺杂剂扩散元件（410）的第一移动掺杂物种类。 使用具有多孔掺杂剂扩散元件（410）的忆阻器（400）的方法包括施加电压偏压以产生编程电场，使得掺杂剂通过多孔掺杂剂扩散元件（410）移动，从而改变掺杂剂的分布 在忆阻矩阵（415）内形成第一状态; 去除电压偏置，掺杂剂在没有编程电场的情况下基本上是不可移动的; 以及将读取能量施加到所述忆阻设备（400）以感测所述第一状态。

公开(公告)号：WO2010050937A1

公开(公告)日：2010-05-06

申请号：PCT/US2008/081567

申请日：2008-10-29

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  YANG, Jianhua ,  STEWART, Duncan ,  KUEKES, Philip, J. ,  TONG, William, M.

Inventor： YANG, Jianhua ,  STEWART, Duncan ,  KUEKES, Philip, J. ,  TONG, William, M.

IPC: H01L21/265 ,  H01L21/8247

CPC classification number: H01L27/10 ,  H01L21/2254 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1658 ,  H01L45/1675

Abstract: An electrically actuated device includes a first electrode, a second electrode, and an active region disposed between the first and second electrodes. The device further includes at least one of dopant initiators or dopants localized at an interface between i) the first electrode and the active region, or ii) the second electrode and the active region, or iii) the active region and each of the first and second electrodes.

Abstract translation: 电驱动装置包括第一电极，第二电极和设置在第一和第二电极之间的有源区。 该器件还包括位于i）第一电极和有源区之间的界面处的掺杂剂引发剂或掺杂剂中的至少一种，或ii）第二电极和有源区，或iii）活性区和第一和 第二电极。

公开(公告)号：WO2010085241A1

公开(公告)日：2010-07-29

申请号：PCT/US2009/031458

申请日：2009-01-20

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  TONG, William M. ,  QUITORIANO, Nathaniel J. ,  STEWART, Duncan ,  KUEKES, Philip J.

Inventor： TONG, William M. ,  QUITORIANO, Nathaniel J. ,  STEWART, Duncan ,  KUEKES, Philip J.

IPC: H01L27/115 ,  H01L21/8247 ,  H01L21/265

CPC classification number: H01L21/26586 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147 ,  H01L45/165

Abstract: A multilayer memristive device includes a first electrode (410); a second electrode (405); a first memristive region (430) and a second memristive region (435) which created by directional ion implantation of dopant ions (420, 425) and are interposed between the first electrode (410) and the second electrode (405); and mobile dopants (315) which move within the first memristive region (430) and the second memristive region (435) in response to an applied electrical field.

Abstract translation: 多层回忆装置包括第一电极（410）; 第二电极（405）; 通过定向离子注入掺杂剂离子（420,425）而形成的第一忆阻区（430）和第二忆阻区（435），并置于第一电极（410）和第二电极（405）之间; 以及响应于施加的电场在第一忆阻区（430）和第二忆阻区（435）内移动的移动掺杂剂（315）。

公开(公告)号：WO2007056533A1

公开(公告)日：2007-05-18

申请号：PCT/US2006/043681

申请日：2006-11-08

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L. P. ,  TONG, William M, ,  ISLAM, M Saiful,

Inventor： TONG, William M, ,  ISLAM, M Saiful,

IPC: H01L49/00 ,  G01N21/65

CPC classification number: H01L49/006 ,  B82Y10/00 ,  G01N21/658 ,  Y10S977/888 ,  Y10S977/893

Abstract: A method for forming quantum dots (11 ) includes forming a superlattice structure (18) that includes at least one nanostrip (40, 42) protruding from the superlattice structure, providing a quantum dot substrate (14), transferring the at least one nanostrip to the quantum dot substrate, and removing at least a portion of the at least one nanostrip from the substrate. The superlattice structure is formed by providing a superlattice substrate (32), forming alternating layers of first and second materials (20, 24) on the substrate to form a stack, cleaving the stack to expose the alternating layers, and etching the exposed alternating layers with an etchant that etches the second material at a greater rate than the first to form the at least one nanostrip.

Abstract translation: 一种用于形成量子点（11）的方法包括形成超晶格结构（18），其包括从超晶格结构突出的至少一个纳米线（40,42），提供量子点衬底（14），将所述至少一个纳米片转移到 所述量子点衬底，以及从所述衬底去除所述至少一个纳米线的至少一部分。 超晶格结构通过提供超晶格衬底（32）形成，在衬底上形成第一和第二材料（20,24）的交替层以形成堆叠，切割堆叠以暴露交替层，以及蚀刻暴露的交替层 其中蚀刻剂以比第一材料更高的速率蚀刻第二材料以形成至少一个纳米线。

公开(公告)号：WO2006036433A3

公开(公告)日：2006-08-10

申请号：PCT/US2005030880

申请日：2005-08-30

Applicant: HEWLETT PACKARD DEVELOPMENT CO ,  WU WEI ,  TONG WILLIAM M ,  GAO JUN ,  PICCIOTTO CARL E

Inventor： WU WEI ,  TONG WILLIAM M ,  GAO JUN ,  PICCIOTTO CARL E

IPC: G03F7/00

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

Abstract: An imprint apparatus (100, 100', 200, 220) and method 300 employ an effective pressure P eff in imprint lithography. The imprint apparatus (100, 100', 200, 220) includes a compressible chamber (111) that encloses an imprint mold (120, 228a) having a mold pattern (122) and a sample (130, 228b) to be imprinted (300). The chamber (111) is compressed (330, 340, 350) to imprint (360) the mold pattern (122) on the sample (130, 228b). The mold (120, 228a) is pressed (350) against the sample (130, 228b) with the effective pressure P eff . The effective pressure P eff is controlled by a selected ratio A cavity /A contact of a cavity area A cavity of the chamber (111) to a contact area A contact between the mold (120, 228a) and the sample (130, 228b).

Abstract translation: 压印装置（100,100'，200,220）和方法300在压印光刻中采用有效压力P eff。 压印装置（100,100'，200,220）包括可压缩室（111），其包围具有模具图案（122）和要印刷的样品（130,228b）的压印模具（120,228a）（300 ）。 腔室（111）被压缩（330,340,350）以在样品（130,228b）上印模（360）模具图案（122）。 模具（120,228a）以有效压力P eff被压制（350）抵靠样品（130,228b）。 有效压力P eff通过空腔区域A腔的选定比例A / A 来控制， （111）的位置与模具（120,228a）和样品（130,228b）之间的接触区域A _接触。