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    TREATMENTS TO IMPROVE DEVICE PERFORMANCE
    2.
    发明申请
    TREATMENTS TO IMPROVE DEVICE PERFORMANCE 审中-公开

    公开(公告)号：WO2022187299A1

    公开(公告)日：2022-09-09

    申请号：PCT/US2022/018427

    申请日：2022-03-02

    Applicant: APPLIED MATERIALS, INC.

    Inventor： HUNG, Steven C.H. ,  DONG, Lin ,  COLOMBEAU, Benjamin ,  SWENBERG, Johanes F. ,  WANG, Linlin

    IPC: H01L21/28 ,  H01L29/51 ,  H01L21/02

    Abstract: A method of forming a semiconductor structure includes annealing a surface of a substrate in an ambient of hydrogen to smooth the surface, pre-cleaning the surface of the substrate, depositing a high-κ dielectric layer on the pre-cleaned surface of the substrate, performing a re-oxidation process to thermally oxidize the surface of the substrate; performing a plasma nitridation process to insert nitrogen atoms in the deposited high-κ dielectric layer, and performing a post-nitridation anneal process to passivate chemical bonds in the plasma nitridated high-κ dielectric layer.

    METHOD OF GROWING THICK OXIDE FILMS AT LOW TEMPERATURE OF THERMAL OXIDE QUALITY
    6.
    发明申请
    METHOD OF GROWING THICK OXIDE FILMS AT LOW TEMPERATURE OF THERMAL OXIDE QUALITY 审中-公开

    公开(公告)号：WO2020190449A1

    公开(公告)日：2020-09-24

    申请号：PCT/US2020/019394

    申请日：2020-02-23

    Applicant: APPLIED MATERIALS, INC.

    Inventor： LESCHKIES, Kurtis ,  SWENBERG, Johanes F. ,  COLOMBEAU, Benjamin ,  VERHAVERBEKE, Steven

    IPC: H01L21/02

    Abstract: Implementations described herein generally relate to methods for forming a low-k dielectric material on a semiconductor substrate. More specifically, implementations described herein relate to methods of forming a silicon oxide film at high pressure and low temperatures. A method of forming a silicon oxide film comprises loading a substrate having a silicon-containing film formed thereon into a processing region of a high-pressure vessel. The method further comprises forming a silicon oxide film on the silicon-containing film. Forming the silicon oxide film on the silicon-containing film comprises exposing the silicon-containing film to an oxidative medium comprising an amine additive at a pressure greater than about 1 bar and maintaining the high-pressure vessel at a temperature between about 100 degrees Celsius and about 550 degrees Celsius.

    METHODS AND APPARATUS FOR SILICON-GERMANIUM PRE-CLEAN
    7.
    发明申请
    METHODS AND APPARATUS FOR SILICON-GERMANIUM PRE-CLEAN 审中-公开

    公开(公告)号：WO2020096696A1

    公开(公告)日：2020-05-14

    申请号：PCT/US2019/051376

    申请日：2019-09-17

    Applicant: APPLIED MATERIALS, INC.

    Inventor： DUBE, Abhishek ,  KUNG, Sheng-Chin ,  BEVAN, Malcolm ,  SWENBERG, Johanes F.

    IPC: H01L21/28 ,  H01L21/02 ,  H01L29/66 ,  H01L29/78 ,  H01L21/67

    Abstract: Methods and apparatuses for processing substrates, such as during silicon-germanium pre-cleans, are provided. A method includes introducing the substrate into a processing system, where the substrate contains a plurality of silicon-containing (e.g., SiGe) fins and a contaminant disposed on the silicon-containing fins, and exposing the substrate to a plasma treatment to remove at least a portion of the contaminant disposed from the silicon-containing fins. The method also includes exposing the substrate to an oxidation treatment to produce an oxide layer on the silicon-containing fins and the remaining contaminant thereon, then exposing the substrate to a dry-clean treatment to remove the oxide layer and the remaining contaminant from the silicon-containing fins and produce a cleaned surface thereon, and depositing an epitaxial layer on the cleaned surface on the silicon-containing fins.

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