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    METHODS OF FORMING SILICON NITRIDE ENCAPSULATION LAYERS
    1.
    发明申请
    METHODS OF FORMING SILICON NITRIDE ENCAPSULATION LAYERS 审中-公开

    公开(公告)号：WO2020242592A1

    公开(公告)日：2020-12-03

    申请号：PCT/US2020/026129

    申请日：2020-04-01

    Applicant: APPLIED MATERIALS, INC.

    Inventor： QI, Bo ,  MALLICK, Abhijit B.

    IPC: H01L21/02 ,  H01L27/24 ,  C23C16/34 ,  C23C16/509 ,  C23C16/455

    Abstract: Embodiments described herein generally relate to methods of processing a substrate comprising positioning a substrate in a processing volume of a processing chamber. The substrate includes a patterned surface having a plurality of features. Individual ones of the plurality of features are defined by one or more openings formed through a multi-layer stack, and the multi-layer stack includes a chalcogen containing material. The methods further include flowing pulses of a first processing gas into the processing volume. Herein, the first processing gas includes a silicon precursor and a nitrogen precursor. The methods further include igniting and maintaining a plasma of the first processing gas. The methods further include depositing a first silicon nitride layer onto the patterned surface of the substrate. Furthermore, the methods include depositing of a second silicon nitride layer on the first silicon nitride layer.

    HIGH DENSITY CARBON FILMS FOR PATTERNING APPLICATIONS
    2.
    发明申请
    HIGH DENSITY CARBON FILMS FOR PATTERNING APPLICATIONS 审中-公开

    公开(公告)号：WO2020086241A1

    公开(公告)日：2020-04-30

    申请号：PCT/US2019/054812

    申请日：2019-10-04

    Applicant: APPLIED MATERIALS, INC.

    Inventor： VENKATASUBRAMANIAN, Eswaranand ,  GOTTHEIM, Samuel E. ,  MANNA, Pramit ,  MALLICK, Abhijit B.

    IPC: H01L21/02 ,  H01L21/324 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/683 ,  C23C16/455 ,  G03F7/20 ,  H01J37/32

    Abstract: Embodiments of the present disclosure generally relate to deposition of high transparency, high-density carbon films for patterning applications. In one embodiment, a method of forming a carbon film on a substrate is provided. The method includes flowing a hydrocarbon-containing gas mixture into a process chamber having a substrate positioned on an electrostatic chuck, wherein the substrate is maintained at a temperature of about -10°C to about 20°C and a chamber pressure of about 0.5 mTorr to about 10 Torr, and generating a plasma by applying a first RF bias to the electrostatic chuck to deposit a diamond-like carbon film containing about 60% or greater hybridized sp 3 atoms on the substrate, wherein the first RF bias is provided at a power of about 1800 Watts to about 2200 Watts and at a frequency of about 40 MHz to about 162 MHz.

    PROCESSES TO DEPOSIT AMORPHOUS-SILICON ETCH PROTECTION LINER
    5.
    发明申请
    PROCESSES TO DEPOSIT AMORPHOUS-SILICON ETCH PROTECTION LINER 审中-公开

    公开(公告)号：WO2022231760A1

    公开(公告)日：2022-11-03

    申请号：PCT/US2022/022988

    申请日：2022-04-01

    Applicant: APPLIED MATERIALS, INC.

    Inventor： SHEN, Zeqing ,  QI, Bo ,  MALLICK, Abhijit B.

    IPC: H01L21/311 ,  H01L27/112

    Abstract: Embodiments of the present disclosure generally relate to fabricating electronic devices, such as memory devices. In one or more embodiments, a method for forming a device includes forming a film stack on a substrate, where the film stack contains a plurality of alternating layers of oxide layers and nitride layers and has a stack thickness, and etching the film stack to a first depth to form a plurality of openings between a plurality of structures. The method includes depositing an etch protection liner containing amorphous-silicon on the sidewalls and the bottoms of the structures, removing the etch protection liner from at least the bottoms of the openings, forming a plurality of holes by etching the film stack in the openings to further extend each bottom of the openings to a second depth of the hole, and removing the etch protection liner from the sidewalls.

    PROCESSES FOR DEPOSITING SIB FILMS
    7.
    发明申请
    PROCESSES FOR DEPOSITING SIB FILMS 审中-公开

    公开(公告)号：WO2022266296A1

    公开(公告)日：2022-12-22

    申请号：PCT/US2022/033744

    申请日：2022-06-16

    Applicant: APPLIED MATERIALS, INC.

    Inventor： AYDIN, Aykut ,  CHENG, Rui ,  JANAKIRAMAN, Karthik ,  MALLICK, Abhijit B. ,  KOSHIZAWA, Takehito ,  QI, Bo

    IPC: H01L21/02 ,  H01L21/033 ,  C23C16/38 ,  C23C16/52

    Abstract: Embodiments of the present disclosure generally relate to processes for forming silicon- and boron-containing films for use in, e.g., spacer-defined patterning applications. In an embodiment, a spacer-defined patterning process is provided. The process includes disposing a substrate in a processing volume of a processing chamber, the substrate having patterned features formed thereon, and flowing a first process gas into the processing volume, the first process gas comprising a silicon- containing species, the silicon-containing species having a higher molecular weight than SiHU. The process further includes flowing a second process gas into the processing volume, the second process gas comprising a boron-containing species, and depositing, under deposition conditions, a conformal film on the patterned features, the conformal film comprising silicon and boron.

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