公开(公告)号：WO2017100136A1

公开(公告)日：2017-06-15

申请号：PCT/US2016/065007

申请日：2016-12-05

Applicant: APPLIED MATERIALS, INC.

Inventor： YE, Zheng John ,  HANAWA, Hiroji ,  ROCHA-ALVAREZ, Juan Carlos ,  MANNA, Pramit ,  TSIANG, Michael Wenyoung ,  KO, Allen ,  WANG, Wenjiao ,  LIN, Yongjing ,  KULSHRESHTHA, Prashant Kumar ,  HAN, Xinhai ,  KIM, Bok Hoen ,  LEE, Kwangduk Douglas ,  NARASIMHA, Karthik Thimmavajjula ,  DUAN, Ziqing ,  PADHI, Deenesh

IPC: H01L21/683 ,  H05H1/46 ,  H01J49/10 ,  H01L21/687

CPC classification number: H01L21/6833 ,  C23C16/458 ,  C23C16/4586 ,  C23C16/505 ,  C23C16/509 ,  H01J37/32091 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556

Abstract: Techniques are disclosed for methods and apparatuses of an electrostatic chuck suitable for operating at high operating temperatures. In one example, a substrate support assembly is provided. The substrate support assembly includes a substantially disk-shaped ceramic body having an upper surface, a cylindrical sidewall, and a lower surface. The upper surface is configured to support a substrate thereon for processing the substrate in a vacuum processing chamber. The cylindrical sidewall defines an outer diameter of the ceramic body. The lower surface is disposed opposite the upper surface. An electrode is disposed in the ceramic body. A circuit is electrically connected to the electrode. The circuit includes a DC chucking circuit, a first RF drive circuit, and a second RF dive circuit. The DC chucking circuit, the first RF drive circuit and the second RF drive circuit are electrically coupled with the electrode..

Abstract translation: 公开了适用于在高操作温度下操作的静电吸盘的方法和装置的技术。 在一个例子中，提供了衬底支撑组件。 基板支撑组件包括具有上表面，圆柱形侧壁和下表面的大致盘形陶瓷体。 上表面被构造成支撑其上的衬底以用于在真空处理室中处理衬底。 圆柱形侧壁限定了陶瓷体的外径。 下表面与上表面相对设置。 电极设置在陶瓷体中。 电路电连接到电极。 该电路包括DC夹持电路，第一RF驱动电路和第二RF潜水电路。 DC夹持电路，第一RF驱动电路和第二RF驱动电路与电极电耦合。

公开(公告)号：WO2017062100A1

公开(公告)日：2017-04-13

申请号：PCT/US2016/046548

申请日：2016-08-11

Applicant: APPLIED MATERIALS, INC.

Inventor： KULSHRESHTHA, Prashant Kumar ,  DUAN, Ziqing ,  NARASIMHA, Karthik Thimmavajjula ,  LEE, Kwangduk Douglas ,  KIM, Bok Hoen

IPC: H01L21/02 ,  C23C16/36 ,  C23C16/24

CPC classification number: H01L21/0338 ,  C23C16/32 ,  C23C16/505 ,  H01L21/02112 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/3065

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about -100 MPa to about 100 MPa.

Abstract translation: 本公开的实施方式一般涉及集成电路的制造。 更具体地，本文所述的实施方案提供了在基底上沉积硼 - 碳膜的技术。 在一个实施方式中，提供了一种处理衬底的方法。 该方法包括将含烃气体混合物流入其中定位有基底的处理室的处理体积，其中将基底加热至约400摄氏度至约700摄氏度的基底温度，使含硼气体 混合物加入到处理体积中并在加工体积中产生RF等离子体以在加热的基底上沉积硼 - 碳膜，其中硼 - 碳膜具有约200至约400GPa的弹性模量和约 - 100MPa至约100MPa。

公开(公告)号：WO2018031193A1

公开(公告)日：2018-02-15

申请号：PCT/US2017/042386

申请日：2017-07-17

Applicant: APPLIED MATERIALS, INC.

Inventor： OGISO, Hiroyuki ,  ZHOU, Jianhua ,  SU, Zonghui ,  ROCHA-ALVAREZ, Juan Carlos ,  LEE, Jeongmin ,  NARASIMHA, Karthik Thimmavajjula ,  GILBERT, Rick ,  PARK, Sang Heon ,  KHAJA, Abdul Aziz ,  PRABHAKAR, Vinay

IPC: H01L21/66

Abstract: Implementations described herein generally relate to methods for leveling a component above a substrate. In one implementation, a test substrate is placed on a substrate support inside of a processing chamber. A component, such as a mask, is located above the substrate. The component is lowered to a position so that the component and the substrate are in contact. The component is then lifted and the particle distribution on the test substrate is reviewed. Based on the particle distribution, the component may be adjusted. A new test substrate is placed on the substrate support inside of the processing chamber, and the component is lowered to a position so that the component and the new test substrate are in contact. The particle distribution on the new test substrate is reviewed. The process may be repeated until a uniform particle distribution is shown on a test substrate.

Abstract translation: 这里描述的实施方式总体上涉及用于在基底上平整部件的方法。 在一个实施方式中，将测试衬底放置在处理室内的衬底支撑件上。 诸如掩模之类的组件位于衬底之上。 部件降低到使部件和基板接触的位置。 然后提起组件并检查测试基底上的颗粒分布。 基于颗粒分布，可以调整组件。 将新的测试衬底放置在处理室内部的衬底支撑件上，并且将该部件降低到使得部件和新的测试衬底接触的位置。 审查新的测试基板上的粒子分布。 该过程可以重复进行，直到在测试基板上显示均匀的粒子分布。

公开(公告)号：WO2017052747A1

公开(公告)日：2017-03-30

申请号：PCT/US2016/043883

申请日：2016-07-25

Applicant: APPLIED MATERIALS, INC.

Inventor： BASU, Saptarshi ,  LEE, Jeongmin ,  CONNORS, Paul ,  DU BOIS, Dale R. ,  KULSHRESHTHA, Prashant Kumar ,  NARASIMHA, Karthik Thimmavajjula ,  BERENS, Brett ,  GHOSH, Kalyanjit ,  ZHOU, Jianhua ,  BALASUBRAMANIAN, Ganesh ,  LEE, Kwangduk Douglas ,  ROCHA-ALVAREZ, Juan Carlos ,  OGISO, Hiroyuki ,  KRIVULINA, Liliya ,  GILBERT, Rick ,  WAQAR, Mohsin ,  SHANKARAMURTHY, Venkatanarayana ,  PONNEKANTI, Hari K.

IPC: H01L21/3065 ,  H01L21/67 ,  H01L21/3213

CPC classification number: H01L21/67069 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/32366 ,  H01J37/3244 ,  H01J37/32633 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/6708 ,  H01L21/67201 ,  H01L21/68785

Abstract: Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.

Abstract translation: 本文公开的实施方案描述了负载锁定斜面蚀刻室内的斜面蚀刻装置及其使用方法。 斜面蚀刻装置在负载锁定斜面蚀刻室内具有掩模组件。 在蚀刻过程中，掩模组件传送气流以控制斜面蚀刻而不使用阴影框架。 因此，可以减小斜边处的边缘排除，从而提高产品产量。