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    ROLL TO ROLL OLED PRODUCTION SYSTEM
    1.
    发明申请
    ROLL TO ROLL OLED PRODUCTION SYSTEM 审中-公开
    滚动OLED生产系统

    公开(公告)号：WO2009134697A2

    公开(公告)日：2009-11-05

    申请号：PCT/US2009/041709

    申请日：2009-04-24

    Applicant: APPLIED MATERIALS, INC. ,  WHITE, John, M. ,  TAKEHARA, Takako

    Inventor： WHITE, John, M. ,  TAKEHARA, Takako

    IPC: H01L51/56 ,  H01L51/52 ,  H05B33/10

    CPC classification number: H01L51/56

    Abstract: The present invention generally relates to a method and an apparatus for processing one or more substrates on a roll to roll system. The one or more substrates may pass through several processing chambers to deposit the layers necessary to produce an OLED structure. The processing chambers may include ink jetting chambers, chemical vapor deposition (CVD) chambers, physical vapor deposition (PVD) chambers, and annealing chambers. Additional chambers may also be present.

    Abstract translation: 本发明一般涉及一种用于在卷对卷系统上处理一个或多个基板的方法和装置。 一个或多个衬底可以通过几个处理室以沉积产生OLED结构所必需的层。 处理室可以包括喷墨室，化学气相沉积（CVD）室，物理气相沉积（PVD）室和退火室。 还可以存在附加的室。

    OCTAGON TRANSFER CHAMBER
    2.
    发明申请
    OCTAGON TRANSFER CHAMBER 审中-公开
    OCTAGON转运室

    公开(公告)号：WO2008014136A2

    公开(公告)日：2008-01-31

    申请号：PCT/US2007/073521

    申请日：2007-07-13

    Applicant: APPLIED MATERIALS, INC. ,  WHITE, John M. ,  TAKEHARA, Takako

    Inventor： WHITE, John M. ,  TAKEHARA, Takako

    IPC: H01L21/677

    CPC classification number: H01L21/67196 ,  H01L21/67742

    Abstract: A method and apparatus for processing substrates in a cluster tool is disclosed. The transfer chambers of the cluster tool have eight locations to which additional chambers (i.e., load lock, buffer, and processing chambers) may attach. The transfer chamber may be formed of three separate portions. The central portion may be a rectangular shaped portion. The two other portions may be trapezoidal shaped portions. The trapezoidal shaped portions each have three slots through which the substrate can move for processing. The central portion of the transfer chamber may have a removable lid that allows a technician to easily access the transfer chamber.

    Abstract translation: 公开了一种用于在群集工具中处理衬底的方法和设备。 群集工具的传送室具有八个位置，附加室（即装载锁定，缓冲和处理室）可以附接到该八个位置。 传送室可以由三个分开的部分形成。 中央部分可以是矩形部分。 另外两个部分可以是梯形形状的部分。 梯形部分每个都具有三个槽，衬底可以通过该槽移动以进行处理。 传送室的中央部分可以有一个可移动的盖子，使技术人员可以方便地进入传送室。

    LOW TEMPERATURE PROCESS FOR TFT FABRICATION
    4.
    发明申请
    LOW TEMPERATURE PROCESS FOR TFT FABRICATION 审中-公开
    TFT制造的低温工艺

    公开(公告)号：WO2004112104A2

    公开(公告)日：2004-12-23

    申请号：PCT/US2004/017236

    申请日：2004-06-01

    Applicant: APPLIED MATERIALS, INC. ,  HSIAO, Mark ,  YIM, Dong-Kil ,  TAKEHARA, Takako ,  SHANG, Quanyuan ,  HARSHBARGER, William, R. ,  KIM, Woong-Kwon ,  YUN, Duk-Chul ,  CHANG, You-Gyung

    Inventor： HSIAO, Mark ,  YIM, Dong-Kil ,  TAKEHARA, Takako ,  SHANG, Quanyuan ,  HARSHBARGER, William, R. ,  KIM, Woong-Kwon ,  YUN, Duk-Chul ,  CHANG, You-Gyung

    IPC: H01L21/00

    CPC classification number: H01L29/66765 ,  H01L29/4908 ,  H01L29/78669 ,  H01L29/78678

    Abstract: Method of fabricating a thin-film transistor (TFT) in which a gate metal is deposited onto a substrate in order to form the gate of the thin-film transistor. The substrate may be an insulative substrate or a color filter. In a first method, the gate metal is subjected to an H 2 plasma. After subjecting the gate metal to an H 2 plasma, the gate insulating film is deposited onto the gate. In a second method, first and second layers of gate insulating film are respectively deposited on the gate at a first and second deposition rates. One layer is deposited under H 2 or argon dilution conditions and has improved insulating conditions while the other layer serves to lower the overall compressive stress of the dual layer gate insulator. In a third method, an n + silicon film is formed on a substrate by maintaining a flow of silane, phosphine and hydrogen gas into a processing chamber at substrate temperatures of about 300 °C or less.

    Abstract translation: 制造薄膜晶体管（TFT）的方法，其中栅极金属沉积到衬底上以便形成薄膜晶体管的栅极。 衬底可以是绝缘衬底或滤色器。 在第一种方法中，栅极金属经受H 2等离子体。 在使栅极金属进入H 2等离子体之后，栅极绝缘膜沉积在栅极上。 在第二种方法中，第一和第二栅极绝缘膜层分别以第一和第二沉积速率沉积在栅极上。 在H2或氩稀释条件下沉积一层，并且具有改善的绝缘条件，而另一层用于降低双层栅极绝缘体的总体压应力。 在第三种方法中，通过在约300℃或更低的衬底温度下保持硅烷，膦和氢气流入处理室，在衬底上形成n +硅膜。

    LOW TEMPERATURE PROCESS FOR PASSIVATION APPLICATIONS
    6.
    发明申请
    LOW TEMPERATURE PROCESS FOR PASSIVATION APPLICATIONS 审中-公开
    低温应用过程

    公开(公告)号：WO2004054010A2

    公开(公告)日：2004-06-24

    申请号：PCT/US2003/039385

    申请日：2003-12-10

    Applicant: APPLIED MATERIALS, INC.

    Inventor： HSIAO, Mark ,  TAKEHARA, Takako ,  SHANG, Quanyuan ,  HARSHBARGER, William, R.

    IPC: H01L51/20

    CPC classification number: H01L51/5253

    Abstract: An organic electroluminescent device comprising an anode layer on a substrate, an organic layer on the anode layer, and a cathode layer on the organic layer. In one embodiment, the cathode layer is subjected to H 2 plasma prior to deposition of a protective layer over the cathode. In another embodiment, the organic electroluminescent device is encapsulated with an inner encapsulation layer on the cathode layer, and an outer encapsulation layer on the inner encapsulation layer. The inner layer is optimized for adhesion to the cathode layer.

    Abstract translation: 一种有机电致发光器件，包括在衬底上的阳极层，阳极层上的有机层和有机层上的阴极层。 在一个实施例中，在阴极上沉积保护层之前，使阴极层经受H 2等离子体。 在另一个实施方案中，有机电致发光器件被封装在阴极层上的内部封装层和内部封装层上的外部封装层。 内层被优化用于与阴极层的粘附。

    REDUCTION OF ELECTROSTATIC CHARGE ON A SUBSTRATE DURING PECVD PROCESS
    7.
    发明申请
    REDUCTION OF ELECTROSTATIC CHARGE ON A SUBSTRATE DURING PECVD PROCESS 审中-公开
    在PECVD过程中减少基底上的静电电荷

    公开(公告)号：WO2003021003A1

    公开(公告)日：2003-03-13

    申请号：PCT/US2002/023848

    申请日：2002-07-26

    Applicant: APPLIED MATERIALS, INC.

    Inventor： WON, Tae, Kyung ,  CHOI, Soo, Young ,  TAKEHARA, Takako ,  HARSHBARGER, William, R.

    IPC: C23C16/458

    CPC classification number: C23C16/4581

    Abstract: Provided herein is a method of reducing an electrostatic charge on a substrate during a plasma enhanced chemical vapor deposition process, comprising the step of depositing a conductive layer onto a top surface of a susceptor support plate disposed within a deposition chamber wherein the conductive layer dissipates the electrostatic charge on the bottom surface of the substrate during a plasma enhanced chemical vapor deposition process. Also provided are a method of depositing a thin film during a plasma enhanced chemical vapor deposition process using the methods disclosed herein and a conductive susceptor.

    Abstract translation: 本文提供的是一种在等离子体增强化学气相沉积工艺期间减少衬底上的静电电荷的方法，其包括将导电层沉积到设置在沉积室内的基座支撑板的顶表面上的步骤，其中导电层消散 在等离子体增强化学气相沉积工艺期间，在衬底的底表面上的静电荷。 还提供了使用本文公开的方法和导电基座在等离子体增强化学气相沉积工艺期间沉积薄膜的方法。

    PROCESS FOR CONTROLLING THIN FILM UNIFORMITY AND PRODUCTS PRODUCED THEREBY
    8.
    发明申请
    PROCESS FOR CONTROLLING THIN FILM UNIFORMITY AND PRODUCTS PRODUCED THEREBY 审中-公开
    控制薄膜均匀性和生产的产品的工艺

    公开(公告)号：WO2003029517A1

    公开(公告)日：2003-04-10

    申请号：PCT/US2002/026456

    申请日：2002-08-19

    Applicant: APPLIED MATERIALS, INC.

    Inventor： WON, Tae Kyung ,  TAKEHARA, Takako ,  HARSHBARGER, William, R.

    IPC: C23C16/458

    CPC classification number: C23C16/401 ,  C23C16/4586 ,  C23C16/46 ,  Y10T428/26

    Abstract: Processes for controlling thickness uniformity of thin organosilicate films as they are deposited on a substrate, and as they finally result. During deposition of the film, which may be accomplished by CVD, PECVD, rapid thermal processing or the like, the substrate temperature is controlled to establish a temperature profile particularly suited to the extreme temperature sensitivities of the deposition rates of organosilicate films such as those deposited from TEOS as a source material.

    Abstract translation: 用于控制薄的有机硅酸盐膜沉积在基底上的厚度均匀性的方法，并且最终得到结果。 在可以通过CVD，PECVD，快速热处理等实现的膜沉积期间，控制衬底温度以建立特别适合于有机硅酸盐膜的沉积速率的极端温度敏感性的温度分布，例如沉积的那些 从TEOS作为源材料。

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