公开(公告)号：WO2008014136A2

公开(公告)日：2008-01-31

申请号：PCT/US2007/073521

申请日：2007-07-13

Applicant: APPLIED MATERIALS, INC. ,  WHITE, John M. ,  TAKEHARA, Takako

Inventor： WHITE, John M. ,  TAKEHARA, Takako

IPC: H01L21/677

CPC classification number: H01L21/67196 ,  H01L21/67742

Abstract: A method and apparatus for processing substrates in a cluster tool is disclosed. The transfer chambers of the cluster tool have eight locations to which additional chambers (i.e., load lock, buffer, and processing chambers) may attach. The transfer chamber may be formed of three separate portions. The central portion may be a rectangular shaped portion. The two other portions may be trapezoidal shaped portions. The trapezoidal shaped portions each have three slots through which the substrate can move for processing. The central portion of the transfer chamber may have a removable lid that allows a technician to easily access the transfer chamber.

Abstract translation: 公开了一种用于在群集工具中处理衬底的方法和设备。 群集工具的传送室具有八个位置，附加室（即装载锁定，缓冲和处理室）可以附接到该八个位置。 传送室可以由三个分开的部分形成。 中央部分可以是矩形部分。 另外两个部分可以是梯形形状的部分。 梯形部分每个都具有三个槽，衬底可以通过该槽移动以进行处理。 传送室的中央部分可以有一个可移动的盖子，使技术人员可以方便地进入传送室。

公开(公告)号：WO2007149945A3

公开(公告)日：2007-12-27

申请号：PCT/US2007/071703

申请日：2007-06-20

Applicant: APPLIED MATERIALS, INC. ,  CHOI, Soo Young ,  TAKEHARA, Takako ,  WHITE, John M. ,  CHAE, Yong Kee

Inventor： CHOI, Soo Young ,  TAKEHARA, Takako ,  WHITE, John M. ,  CHAE, Yong Kee

IPC: H01L31/00

Abstract: Methods for depositing a microcrystalline silicon film layer with improved deposition rate and film quality are provided in the present invention. Also, a photovoltaic (PV) cell having a microcrystalline silicon film is provided. In one embodiment, the method produces a microcrystalline silicon film on a substrate at a deposition rate greater than about 20 nm per minute, wherein the microcrystalline silicon film has a crystallized volume between about 20 percent to about 80 percent.

公开(公告)号：WO2018086697A1

公开(公告)日：2018-05-17

申请号：PCT/EP2016/077324

申请日：2016-11-10

Applicant: APPLIED MATERIALS, INC. ,  WHITE, John M. ,  SCHNAPPENBERGER, Frank ,  BUSCH, John D.

Inventor： WHITE, John M. ,  SCHNAPPENBERGER, Frank ,  BUSCH, John D.

IPC: C23C14/34 ,  H01J37/34 ,  C23C16/44 ,  C23C16/455 ,  H01J37/32

CPC classification number: C23C14/34 ,  C23C16/4412 ,  C23C16/45502 ,  H01J37/32449 ,  H01J37/32752 ,  H01J37/32816 ,  H01J37/32834 ,  H01J37/3417 ,  H01J37/3488

Abstract: According to one aspect of the present disclosure, an apparatus for vacuum deposition on a substrate is provided. The apparatus comprises: a vacuum chamber (110) comprising a first side wall (112) with a first pump opening (113) and a second side wall (114) with a second pump opening (115), a first deposition area (121) configured for housing a first deposition source (120) for depositing a layer on a substrate, a first substrate transportation path (T1) along which a substrate is to be transported which extends in the vacuum chamber (110) past the first deposition area, and a first pumping channel (142) arranged adjacent to the first deposition area (121) and extending from the first pump opening (113) to the second pump opening (115), wherein the first pumping channel (142) comprises one or more lateral openings (145) defining a first gas flow path (P1) from a main volume of the vacuum chamber into the first pumping channel. Further, a deposition module as well as a method of depositing a layer on a substrate are described.

Abstract translation: 根据本公开的一个方面，提供了一种用于在衬底上进行真空沉积的设备。 该装置包括：真空室（110），包括具有第一泵开口（113）的第一侧壁（112）和具有第二泵开口（115）的第二侧壁（114），第一沉积区域（121） ，其被配置为容纳用于在衬底上沉积层的第一沉积源（120），第一衬底传送路径（T1），沿着该第一衬底传送路径在所述真空室（110）中延伸经过所述第一沉积区域的衬底将被传送，以及 所述第一泵送通道（142）邻近所述第一沉积区域（121）布置并且从所述第一泵开口（113）延伸到所述第二泵开口（115），其中所述第一泵送通道（142）包括一个或多个侧向开口 （145）限定从真空室的主体积到第一泵送通道中的第一气体流动路径（P1）。 此外，描述了沉积模块以及在基底上沉积层的方法。

公开(公告)号：WO2017071830A1

公开(公告)日：2017-05-04

申请号：PCT/EP2016/059532

申请日：2016-04-28

Applicant: APPLIED MATERIALS, INC. ,  WHITE, John M. ,  GRAW, Oliver

Inventor： WHITE, John M. ,  GRAW, Oliver

IPC: C23C16/54 ,  H01L21/67 ,  H01L21/677 ,  C23C14/35 ,  C23C14/56

CPC classification number: C23C14/566 ,  C23C14/352 ,  C23C14/568 ,  C23C16/54

Abstract: The present disclosure provides an apparatus (100) for vacuum deposition on a substrate (10). The apparatus (100) includes a vacuum chamber (110) having a first area (112) and a first deposition area (114), one or more deposition sources (120) at the first deposition area (114), wherein the one or more deposition sources (120) are configured for vacuum deposition on at least a first substrate (10) while the at least a first substrate (10) is transported along a first transport direction (1) past the one or more deposition sources (120), and a first substrate transport unit (140) in the first area (112), wherein the first substrate transport unit (140) is configured for moving the at least a first substrate (10) within the first area (112) in a first track switch direction (4), which is different from the first transport direction (1).

Abstract translation: 本公开提供了一种用于真空沉积在基底（10）上的设备（100）。 装置（100）包括具有第一区域（112）和第一沉积区域（114）的真空室（110），在第一沉积区域（114）处的一个或多个沉积源（120），其中一个或多个 沉积源（120）被配置用于在至少第一衬底（10）沿着第一传送方向（1）传送经过一个或多个沉积源（120）的同时在至少第一衬底（10）上真空沉积， 和位于所述第一区域（112）中的第一基板传送单元（140），其中所述第一基板传送单元（140）被配置用于在所述第一区域（112）内的所述第一区域（112）内移动所述至少第一基板 切换方向（4），这与第一传送方向（1）不同。

公开(公告)号：WO2011146571A2

公开(公告)日：2011-11-24

申请号：PCT/US2011/036932

申请日：2011-05-18

Applicant: APPLIED MATERIALS, INC. ,  KUDELA, Jozef ,  BAEK, Jonghoon ,  WHITE, John M. ,  TINER, Robin L. ,  ANWAR, Suhail

Inventor： KUDELA, Jozef ,  BAEK, Jonghoon ,  WHITE, John M. ,  TINER, Robin L. ,  ANWAR, Suhail

CPC classification number: B05B1/185 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32651 ,  Y10T137/6851

Abstract: Embodiments of the invention generally include shield frame assembly for use with a showerhead assembly, and a showerhead assembly having a shield frame assembly that includes an insulator that tightly fits around the perimeter of a showerhead in a vacuum processing chamber. In one embodiment, a showerhead assembly includes a gas distribution plate and a multi-piece frame assembly that circumscribes a perimeter edge of the gas distribution plate. The multi-piece frame assembly allows for expansion of the gas distribution plate without creating gaps which may lead to arcing. In other embodiments, the insulator is positioned to be have the electric fields concentrated at the perimeter of the gas distribution plate located therein, thereby reducing arcing potential.

Abstract translation: 本发明的实施例通常包括用于喷头组件的屏蔽框架组件和具有屏蔽框架组件的喷头组件，所述屏蔽框架组件包括紧密配合在真空处理室中的喷头周边周围的绝缘体。 在一个实施例中，喷头组件包括气体分配板和环绕气体分布板的周边边缘的多片框架组件。 多件式框架组件允许气体分配板的膨胀而不产生可能导致电弧的间隙。 在其它实施例中，绝缘体被定位成具有集中在位于其中的气体分配板的周边的电场，从而减少电弧电势。

公开(公告)号：WO2010091205A2

公开(公告)日：2010-08-12

申请号：PCT/US2010/023236

申请日：2010-02-04

Applicant: APPLIED MATERIALS, INC. ,  CHOI, Soo Young ,  TINER, Robin L. ,  KURITA, Shinichi ,  WHITE, John M. ,  SORENSEN, Carl A. ,  KHO, Jeffrey A. ,  ANWAR, Suhail ,  FURUTA, Gaku ,  INAGAWA, Makoto

Inventor： CHOI, Soo Young ,  TINER, Robin L. ,  KURITA, Shinichi ,  WHITE, John M. ,  SORENSEN, Carl A. ,  KHO, Jeffrey A. ,  ANWAR, Suhail ,  FURUTA, Gaku ,  INAGAWA, Makoto

IPC: H05H1/34 ,  H01L21/205

CPC classification number: C23C16/5096 ,  C23C16/4585 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32568 ,  H01L21/67069

Abstract: A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.

Abstract translation: 描述了用于为两个电极之间的电流提供电对称接地或返回路径的方法和设备。 该装置包括至少一个射频（RF）装置，该射频（RF）装置耦合到电极中的一个并且位于处理室的侧壁和/或底部之间。 该方法包括使用一个电极相对于另一个电极移动，并且使用耦合到侧壁和电极的RF装置，耦合到腔室底部的RF装置以及耦合到侧壁和电极的RF装置中的一个或两个，基于位移电极的位置实现接地返回路径， 电极或其组合。

公开(公告)号：WO2009014846A1

公开(公告)日：2009-01-29

申请号：PCT/US2008/068148

申请日：2008-06-25

Applicant: APPLIED MATERIALS, INC. ,  KUDELA, Jozef ,  SORENSEN, Carl A. ,  WHITE, John M.

Inventor： KUDELA, Jozef ,  SORENSEN, Carl A. ,  WHITE, John M.

IPC: H01J7/24 ,  H05B31/26

CPC classification number: H01F17/06 ,  C23C16/455 ,  C23C16/505 ,  H01F27/08 ,  H01F2017/065 ,  H01J37/32082 ,  H01J37/3244 ,  H01J2237/0206 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

Abstract: In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design.

Abstract translation: 在大面积等离子体处理系统中，工艺气体可以经由可被作为RF电极驱动的喷头组件引入腔室。 接地的气体供给管与喷头电气隔离。 气体供给管不仅可以提供处理气体，还可以提供从远程等离子体源清洁气体到处理室。 气体供给管的内部可以保持在低RF场或零RF场，以避免气体进料管内的过早气体击穿，这可能导致气体源和喷头之间的寄生等离子体形成。 通过馈送气体通过RF扼流圈，RF场和处理气体可以通过公共位置被引入处理室，从而简化室设计。

公开(公告)号：WO2008154446A2

公开(公告)日：2008-12-18

申请号：PCT/US2008/066210

申请日：2008-06-06

Applicant: APPLIED MATERIALS, INC. ,  CHOI, Soo Young ,  WON, Tae Kyung ,  PARK, Beom Soo ,  WHITE, John M.

Inventor： CHOI, Soo Young ,  WON, Tae Kyung ,  PARK, Beom Soo ,  WHITE, John M.

IPC: B05D5/12 ,  C23C16/00

CPC classification number: C23C16/45565 ,  H01L31/182 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/546 ,  Y02P70/521

Abstract: Methods and apparatus having a gradient spacing created between a substrate support assembly and a gas distribution plate for depositing a silicon film for solar cell applications are provided. In one embodiment, an apparatus for depositing films for solar cell applications may include a processing chamber, a substrate support disposed in the processing chamber and configured to support a quadrilateral substrate thereon, and a gas distribution plate disposed in the processing chamber above the substrate support, wherein a bottom surface of the gas distribution plate has a perimeter that includes edges and corners, and wherein the corners of the gas distribution plate are closer to the substrate support than the edges of the gas distribution plate.

Abstract translation: 提供了在衬底支撑组件和用于沉积太阳能电池应用的硅膜的气体分配板之间产生梯度间隔的方法和装置。 在一个实施例中，一种用于沉积太阳能电池薄膜的设备可以包括处理室，设置在处理室中并被配置为在其上支撑四边形衬底的衬底支撑件，以及布置在衬底支撑件上方的处理室中的气体分配板 其中，所述气体分配板的底面具有包括边缘和角部的周边，并且其中所述气体分配板的角部比所述气体分配板的边缘更靠近所述基板支撑。

公开(公告)号：WO2008150649A1

公开(公告)日：2008-12-11

申请号：PCT/US2008/063466

申请日：2008-05-12

Applicant: APPLIED MATERIALS, INC. ,  LE, Hien-minh Huu ,  STIMSON, Bradley O. ,  WHITE, John M.

Inventor： LE, Hien-minh Huu ,  STIMSON, Bradley O. ,  WHITE, John M.

IPC: C23C14/34

CPC classification number: C23C14/3407 ,  C23C14/35 ,  H01J37/3408 ,  H01J37/3455

Abstract: A method and apparatus for uniformly eroding a sputtering target is disclosed. As a racetrack shaped magnetic field formed by a magnetron moves across the sputtering surface of the sputtering target, one or more magnets within the magnetron may swing or pivot relative to other magnets within the magnetron to reduce magnetic field pinching at the turns in the racetrack shaped magnetic field. The swinging or pivoting magnets alter the location on the magnetic field at a turn in the racetrack shape where the coordinate of the magnetic field perpendicular to the sputtering surface equals zero. By altering the location, sputtering target erosion uniformity may be increased.

Abstract translation: 公开了一种用于均匀侵蚀溅射靶的方法和装置。 当由磁控管形成的赛道形状的磁场移动穿过溅射靶的溅射表面时，磁控管内的一个或多个磁体可以相对于磁控管内的其它磁体摆动或枢转，以减少在跑道形状的转弯处的磁场夹紧 磁场。 摆动或旋转的磁体在跑道转弯处改变磁场上的位置，其中垂直于溅射表面的磁场的坐标等于零。 通过改变位置，可以增加溅射靶侵蚀均匀性。

公开(公告)号：WO2008106634A2

公开(公告)日：2008-09-04

申请号：PCT/US2008/055448

申请日：2008-02-29

Applicant: APPLIED MATERIALS, INC. ,  WHITE, John M. ,  KURITA, Shinichi ,  MATSUMOTO, Takayuki

Inventor： WHITE, John M. ,  KURITA, Shinichi ,  MATSUMOTO, Takayuki

IPC: F16K51/00 ,  B21D51/16 ,  F16K25/00

CPC classification number: F16K51/02 ,  Y10S438/905 ,  Y10T29/49412

Abstract: The present invention generally comprises a floating slit valve for interfacing with a chamber. A floating slit valve moves or "floats" relative to another object such as a chamber. The slit valve may be coupled between two chambers. When a chamber coupled with the slit valve is heated, the slit valve may also be heated by conduction. As the slit valve is heated, it may thermally expand. When a vacuum is drawn in a chamber, the slit valve may deform due to vacuum deflection. By disposing a low friction material spacer between the chamber and the slit valve, the slit valve may not rub against the chamber during thermal expansion/contraction and/or vacuum deflection and thus, may not generate undesirable particle contaminants. Additionally, slots drilled through the chamber for coupling the slit valve to the chamber may be sized to accommodate thermal expansion/contraction and vacuum deflection of the slit valve.

Abstract translation: 本发明一般包括用于与腔室接口的浮动狭缝阀。 浮动狭缝阀移动或“漂浮” 相对于另一个物体如室。 狭缝阀可以连接在两个腔室之间。 当与狭缝阀连接的腔室被加热时，狭缝阀也可以通过传导加热。 当狭缝阀受热时，可能会发生热膨胀。 当在腔室内抽真空时，狭缝阀可能由于真空偏转而变形。 通过在腔室和狭缝阀之间设置低摩擦材料间隔件，狭缝阀在热膨胀/收缩和/或真空偏转期间不会与腔室摩擦，因此不会产生不希望有的颗粒污染物。 另外，通过腔室钻出的用于将狭缝阀连接到腔室的狭槽的尺寸可以适应狭缝阀的热膨胀/收缩和真空偏转。