公开(公告)号：WO2015077609A1

公开(公告)日：2015-05-28

申请号：PCT/US2014/066894

申请日：2014-11-21

Applicant: GLO AB ,  HERNER, Scott Brad ,  ROMANO, Linda ,  THOMPSON, Daniel Bryce ,  SCHUBERT, Martin ,  KANESHIRO, Ronald

Inventor： HERNER, Scott Brad ,  ROMANO, Linda ,  THOMPSON, Daniel Bryce ,  SCHUBERT, Martin ,  KANESHIRO, Ronald

IPC: F21S2/00

CPC classification number: H01L33/483 ,  G02B19/0066 ,  H01L27/153 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/32 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2933/0033 ,  H01L2924/00

Abstract: Methods of locating a plurality of light emitting diode (LED) dies in a submount include providing the plurality of LED dies across a surface of the submount, the submount including a plurality of tubs corresponding in shape and/or size with the shape and/or size of the LED dies to fill each tub with correspondingly shaped and/or sized LED die.

Abstract translation: 将多个发光二极管（LED）裸片定位在基座中的方法包括：在多个基座的表面上设置多个LED管芯，该底座包括形状和/或尺寸对应的多个与形状和/或尺寸形状和/ LED的尺寸为相应形状和/或尺寸的LED管芯填充每个桶。

公开(公告)号：WO2015077612A1

公开(公告)日：2015-05-28

申请号：PCT/US2014/066899

申请日：2014-11-21

Applicant: GLO AB ,  HERNER, Scott Brad ,  ROMANO, Linda ,  THOMPSON, Daniel Bryce ,  SCHUBERT, Martin

Inventor： HERNER, Scott Brad ,  ROMANO, Linda ,  THOMPSON, Daniel Bryce ,  SCHUBERT, Martin

IPC: H01L33/00 ,  H01L21/78 ,  H01L21/30

CPC classification number: H01L33/0095 ,  B23K26/0057 ,  B23K26/40 ,  B23K26/402 ,  B23K26/53 ,  H01L33/20

Abstract: A method of dicing semiconductor devices includes depositing a continuous first layer over the substrate, such that the first layer imparts a compressive stress to the substrate, and etching grooves in the first layer to increase local stress at the grooves compared to stress at the remainder of the first layer located over the substrate. The method also includes generating a pattern of defects in the substrate with a laser beam, such that a location of the defects in the pattern of defects substantially corresponds to a location of at least some of the grooves in the in the first layer, and applying pressure to the substrate to dice the substrate along the grooves.

Abstract translation: 一种切割半导体器件的方法包括在衬底上沉积连续的第一层，使得第一层向衬底施加压缩应力，并且在第一层中蚀刻凹槽以增加沟槽处的局部应力，与其余部分的应力相比 第一层位于衬底上。 该方法还包括用激光束产生衬底中的缺陷图案，使得缺陷图案中的缺陷位置基本上对应于第一层中的至少一些凹槽的位置，以及施加 对基板的压力沿着凹槽切割基板。

公开(公告)号：WO2016049507A1

公开(公告)日：2016-03-31

申请号：PCT/US2015/052318

申请日：2015-09-25

Applicant: GLO AB ,  SCHUBERT, Martin

Inventor： SCHUBERT, Martin ,  THOMPSON, Daniel Bryce ,  GRUNDMANN, Michael ,  GARDNER, Nathan

IPC: H01L33/20

CPC classification number: H01L33/507 ,  G02F2202/36 ,  H01L27/15 ,  H01L27/153 ,  H01L33/0062 ,  H01L33/06 ,  H01L33/08 ,  H01L33/24 ,  H01L33/30 ,  H01L33/502

Abstract: A set of light emitting devices can be formed on a substrate. A growth mask having a first aperture in a first area and a second aperture in a second area is formed on a substrate. A first nanowire and a second nanowire are formed in the first and second apertures, respectively. The first nanowire includes a first active region having a first band gap and a second active region having a second band gap. The first band gap is greater than the second band gap. The second nanowire includes an active region having the first band gap and does not include, or is adjoined to, any material having the second band gap.

Abstract translation: 可以在基板上形成一组发光器件。 在衬底上形成具有第一区域中的第一孔和第二区域中的第二孔的生长掩模。 分别在第一和第二孔中形成第一纳米线和第二纳米线。 第一纳米线包括具有第一带隙的第一有源区和具有第二带隙的第二有源区。 第一带隙大于第二带隙。 第二纳米线包括具有第一带隙的有源区，并且不包括或邻接具有第二带隙的任何材料。

公开(公告)号：WO2016022824A1

公开(公告)日：2016-02-11

申请号：PCT/US2015/044049

申请日：2015-08-06

Applicant: GLO AB ,  GARDNER, Nathan ,  KANESHIRO, Ronald ,  THOMPSON, Daniel Bryce ,  DANESH, Fariba ,  SCHUBERT, Martin

Inventor： GARDNER, Nathan ,  KANESHIRO, Ronald ,  THOMPSON, Daniel Bryce ,  DANESH, Fariba ,  SCHUBERT, Martin

IPC: H05B33/14 ,  H01L33/48 ,  F21S2/00

CPC classification number: H01L27/156 ,  H01L33/16 ,  H01L33/24 ,  H01L33/38 ,  H01L33/44 ,  H01L2933/0025 ,  H01L2933/0066

Abstract: A pixelated display device and a method for making the same are disclosed. The device may include an array of nanowire LEDs located above a substrate. When the nanowire LEDs are initially grown, they may emit first-wavelength light proximally to the substrate and second-wavelength light distally from the substrate. The nanowires may remain as initially grown, in which case only second-wavelength light is visible, or the second-wavelength light emitting portions may be etched away such that only first-wavelength light is visible.

Abstract translation: 公开了像素化显示装置及其制造方法。 该器件可以包括位于衬底上方的纳米线LED阵列。 当纳米线LED最初生长时，它们可以向衬底向近端发射第一波长光，并从衬底向远端发射第二波长光。 纳米线可以保持初始生长，在这种情况下，只有第二波长的光是可见的，或者可以蚀刻掉第二波长的发光部分，使得只有第一波长的光是可见的。

公开(公告)号：WO2015077623A1

公开(公告)日：2015-05-28

申请号：PCT/US2014/066919

申请日：2014-11-21

Applicant: GLO AB ,  HERNER, Scott Brad ,  ROMANO, Linda ,  THOMPSON, Daniel Bryce ,  SCHUBERT, Martin

Inventor： HERNER, Scott Brad ,  ROMANO, Linda ,  THOMPSON, Daniel Bryce ,  SCHUBERT, Martin

IPC: H01L33/62

CPC classification number: H01L33/486 ,  H01L27/156 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/62 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A submount for light emitting diode (LED) die includes a substrate containing a plurality of tubs configured to receive an LED die, and a plurality of integrated interconnects integrated into the substrate. At least a portion of the interconnects for each tub have an exposed portion on a side of the submount and at least some of the plurality of the interconnects are not connected to other interconnects in the submount.

Abstract translation: 发光二极管（LED）裸片的基座包括：衬底，其包含被构造成接收LED管芯的多个槽，以及集成到衬底中的多个集成互连。 每个桶的互连的至少一部分具有在基座的一侧上的暴露部分，并且多个互连中的至少一些不连接到副安装座中的其它互连。

公开(公告)号：WO2017099905A1

公开(公告)日：2017-06-15

申请号：PCT/US2016/059736

申请日：2016-10-31

Applicant: GLO AB

Inventor： THOMPSON, Daniel Bryce

IPC: H05B33/14 ,  H05B33/20 ,  H01L33/32

CPC classification number: H01L25/167 ,  H01L21/76254 ,  H01L27/156 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/81 ,  H01L2224/81001 ,  H01L2933/0033

Abstract: A laser liftoff process is provided. A device layer can be provided on a transfer substrate. Channels can be formed through the device layer such that devices comprising remaining portions of the device layer are laterally isolated from one another by the channels. The transfer substrate can be bonded to a target substrate through an adhesion layer. Surface portions of the devices can be removed from an interface region between the transfer substrate and the devices by irradiating a laser beam through the transfer substrate onto the devices. The laser irradiation decomposes the III-V compound semiconductor material. The channels provide escape paths for the gaseous products (such as nitrogen gas) that are generated by the laser irradiation. The transfer substrate is separated from a bonded assembly including the target substrate and remaining portions of the devices. The devices can include a III-V compound semiconductor material.

Abstract translation: 提供激光剥离工艺。 器件层可以设置在转印基板上。 可以穿过器件层形成沟道，使得包括器件层的剩余部分的器件通过沟道彼此横向隔离。 转印基板可以通过粘合层粘合到目标基板。 通过将激光束通过转移衬底照射到器件上，器件的表面部分可以从转移衬底与器件之间的界面区域被去除。 激光照射分解III-V族化合物半导体材料。 通道为激光照射产生的气体产物（如氮气）提供逸出通道。 转印基板与包括目标基板和设备的其余部分的粘合组件分离。 这些器件可以包含III-V族化合物半导体材料。

公开(公告)号：WO2016100662A1

公开(公告)日：2016-06-23

申请号：PCT/US2015/066372

申请日：2015-12-17

Applicant: GLO AB ,  GARDNER, Nathan F. ,  KISH, JR., Fredrick A. ,  MODRIC, Miljenko ,  POKHRIYAL, Anusha ,  THOMPSON, Daniel Bryce ,  DANESH, Fariba ,  GALLAGHER, Timothy ,  FARRENS, Sharon N.

Inventor： GARDNER, Nathan F. ,  KISH, JR., Fredrick A. ,  MODRIC, Miljenko ,  POKHRIYAL, Anusha ,  THOMPSON, Daniel Bryce ,  DANESH, Fariba ,  GALLAGHER, Timothy ,  FARRENS, Sharon N.

IPC: H01L33/48 ,  H01L33/62

CPC classification number: H01L25/0753 ,  H01L24/97 ,  H01L25/50 ,  H01L27/156 ,  H01L33/0095 ,  H01L33/62 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/81 ,  H01L2224/81001 ,  H01L2224/95

Abstract: A backplane optionally having stepped horizontal surfaces and optionally embedding metal interconnect structures is provided. First conductive bonding structures are formed on first stepped horizontal surfaces. First light emitting devices on a first transfer substrate are disposed on the first conductive bonding structures, and a first subset of the first light emitting devices is bonded to the first conductive bonding structures. Laser irradiation can be employed to selectively disconnect the first subset of the first light emitting devices from the first transfer substrate while a second subset of the first light emitting devices remains attached to the first transfer substrate. Additional devices on each additional transfer substrate can be bonded to additional conductive bonding structures on the backplane employing the same method provided that the additional devices are not present in positions that would overlap with pre-existing first light emitting devices or devices on the backplane at a bonding position.

Abstract translation: 提供了可选地具有阶梯式水平表面和任选地嵌入金属互连结构的背板。 第一导电接合结构形成在第一台阶水平表面上。 第一转印衬底上的第一发光器件设置在第一导电接合结构上，并且第一发光器件的第一子集结合到第一导电接合结构。 可以使用激光照射来选择性地将第一发光器件的第一子集与第一转移衬底分离，而第一发光器件的第二子集保持附着到第一转移衬底。 每个附加传输基板上的附加设备可以使用相同的方法与背板上的附加导电接合结构接合，只要附加设备不存在于与先前存在的第一发光设备或背板上的设备重叠的位置处 粘接位置。

公开(公告)号：WO2015089123A1

公开(公告)日：2015-06-18

申请号：PCT/US2014/069429

申请日：2014-12-10

Applicant: GLO AB ,  HERNER, Scott Brad ,  THOMPSON, Daniel Bryce

Inventor： HERNER, Scott Brad ,  THOMPSON, Daniel Bryce

IPC: H01L33/20

CPC classification number: H01L33/42 ,  B82Y20/00 ,  B82Y40/00 ,  H01L33/24 ,  H01L2933/0016 ,  Y10S977/762 ,  Y10S977/891 ,  Y10S977/95

Abstract: Various embodiments include methods of fabricating light emitting diode (LED) devices, such as nanowire LED devices, that include forming a layer of a transparent, electrically conductive material over at least a portion of a non-planar surface of an LED device, and depositing a layer of a dielectric material over at least a portion of the layer of transparent conductive material, wherein depositing the layer of dielectric material comprises at least one of: (a) depositing the layer using a chemical vapor deposition (CVD) process, (b) depositing the layer at a temperature of 200°C or more, and (c) depositing the layer using one or more chemically active precursors for the dielectric material.

Abstract translation: 各种实施例包括制造诸如纳米线LED器件的发光二极管（LED）器件的方法，其包括在LED器件的非平面表面的至少一部分上形成透明导电材料层，以及沉积 在所述透明导电材料层的至少一部分上的介电材料层，其中沉积所述电介质材料层包括以下至少一个：（a）使用化学气相沉积（CVD）工艺沉积所述层，（b ）在200℃或更高的温度下沉积该层，以及（c）使用一种或多种用于电介质材料的化学活性前体沉积该层。

公开(公告)号：WO2014066371A1

公开(公告)日：2014-05-01

申请号：PCT/US2013/066151

申请日：2013-10-22

Applicant: GLO AB ,  HERNER, Scott Brad ,  THOMPSON, Daniel Bryce ,  LEMAY, Cynthia

Inventor： HERNER, Scott Brad ,  THOMPSON, Daniel Bryce ,  LEMAY, Cynthia

IPC: H01L33/20 ,  H01L33/04

CPC classification number: H01L33/06 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/04 ,  H01L33/24 ,  H01L33/32 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0016

Abstract: A method for treating a LED structure with a substance, the LED structure includes an array of nanowires on a planar support. The method includes producing the substance at a source and causing it to move to the array along a line. The angle between the line followed by the substance and the plane of the support is less than 90o when measured from the center of the support. The substance is capable of rendering a portion of the nanowires nonconductive or less conductive compared to before being treated by the substance.

Abstract translation: 一种用物质处理LED结构的方法，所述LED结构包括平面支撑件上的纳米线阵列。 该方法包括在源处产生物质并使其沿着线移动到阵列。 当从支撑体的中心测量时，物质和支撑体平面之间的线之间的角度小于90°。 该物质能够使纳米线的一部分与被物质处理之前相比不导电或较不导电。