公开(公告)号：WO2006063007A3

公开(公告)日：2006-06-15

申请号：PCT/US2005/044180

申请日：2005-12-06

Applicant: GRANDIS, INC. ,  PAKALA, Mahendra ,  VALET, Thierry ,  HUAI, Yiming ,  DIAO, Zhitao

Inventor： PAKALA, Mahendra ,  VALET, Thierry ,  HUAI, Yiming ,  DIAO, Zhitao

IPC: H01L21/00

Abstract: A method and system for providing a magnetic element are disclosed. The method and system include providing a pinned layer, a free layer, and a spacer layer between the pinned layer and the free layer. The spacer layer is insulating and has an ordered crystal structure. The spacer layer is also configured to allow tunneling through the spacer layer. In one aspect, the free layer is comprised of a single magnetic layer having a particular crystal structure and texture with respect to the spacer layer. In another aspect, the free layer is comprised of two sublayers, the first sublayer having a particular crystal structure and texture with respect to the spacer layer and the second sublayer having a lower moment. In still another aspect, the method and system also include providing a second pinned layer and a second spacer layer that is nonmagnetic and resides between the free layer and the second pinned layer. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.

公开(公告)号：WO2007025050A2

公开(公告)日：2007-03-01

申请号：PCT/US2006/033093

申请日：2006-08-23

Applicant: GRANDIS, INC. ,  PAKALA, Mahendra ,  CHEN, Eugene, Youjun ,  HUAI, Yiming

Inventor： PAKALA, Mahendra ,  CHEN, Eugene, Youjun ,  HUAI, Yiming

IPC: H01L29/74

CPC classification number: H01L43/08 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3263 ,  H01F10/3272 ,  H01F10/3281 ,  H01L43/10

Abstract: A method and system for providing a magnetic element are disclosed. The method and system include providing a pinned layer, providing a spacer layer, and providing a free layer. The free layer is ferrimagnetic and includes at least one of a conductive ferrite, a garnet, a ferrimagnetic alloy excluding a rare earth, a heavy rare- earth-transition metal alloy, a half-metallic ferrimagnetic, and a bilayer. The bilayer includes a rare earth-transition metal alloy layer and a spin current enhancement layer. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.

Abstract translation: 公开了一种用于提供磁性元件的方法和系统。 该方法和系统包括提供钉扎层，提供间隔层，并提供自由层。 自由层是亚铁磁性的，并且包括导电铁氧体，石榴石，除稀土之外的亚铁磁合金，重稀土 - 过渡金属合金，半金属亚铁磁性和双层中的至少一种。 双层包括稀土 - 过渡金属合金层和自旋电流增强层。 磁性元件被配置为当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。

公开(公告)号：WO2006133342A2

公开(公告)日：2006-12-14

申请号：PCT/US2006/022233

申请日：2006-06-07

Applicant: GRANDIS, INC. ,  DIAO, Zhitao ,  HUAI, Yiming ,  PAKALA, Mahendra ,  QIAN, Zhenghong

Inventor： DIAO, Zhitao ,  HUAI, Yiming ,  PAKALA, Mahendra ,  QIAN, Zhenghong

IPC: G11C11/00

CPC classification number: G11C11/16

Abstract: A method and system for providing a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells, a plurality of word lines, and a plurality of bit lines. Each of the plurality of magnetic storage cells includes a plurality of magnetic elements and at least one selection transistor. Each of the plurality of magnetic elements is capable of being programmed using spin transfer induced switching by a write current driven through the magnetic element. Each of the plurality of magnetic elements has a first end and a second end. The at least one selection transistor is coupled to the first end of each of the plurality of magnetic elements. The plurality of word lines is coupled with the plurality of selection transistors and selectively enables a portion of the plurality of selection transistors.

Abstract translation: 描述了一种用于提供磁存储器的方法和系统。 该方法和系统包括提供多个磁存储单元，多个字线和多个位线。 多个磁存储单元中的每一个包括多个磁性元件和至少一个选择晶体管。 多个磁性元件中的每一个能够通过由磁性元件驱动的写入电流使用自旋转移感应开关来编程。 多个磁性元件中的每一个具有第一端和第二端。 所述至少一个选择晶体管耦合到所述多个磁性元件中的每一个的第一端。 多个字线与多个选择晶体管耦合，并且选择性地使能多个选择晶体管的一部分。

公开(公告)号：WO2005050653A2

公开(公告)日：2005-06-02

申请号：PCT/US2004/037633

申请日：2004-11-12

Applicant: GRANDIS, INC. ,  PAKALA, Mahendra ,  HUAI, Yiming

Inventor： PAKALA, Mahendra ,  HUAI, Yiming

IPC: G11C

CPC classification number: G11C11/16 ,  B82Y10/00 ,  B82Y25/00 ,  H01F10/3272 ,  H01F10/3286 ,  H01L27/228 ,  H01L43/08

Abstract: A method and system for providing a magnetic memory is disclosed. The method and system include providing a plurality of magnetic elements and providing at least one stress-assist layer. Each of the plurality of magnetic elements is configured to be written using spin transfer. The at least one stress-assist layer is configured to exert at least one stress on at least one magnetic element of the plurality of magnetic elements during writing. The reduction of spin-transfer switching current is due to stress exerted by the stress-assist layer on the magnetic elements during writing. Stability of the magnetic memory with respect to thermal fluctuations is not compromised because the energy barrier between the two magnetization states is unchanged once the switching current is turned off.

Abstract translation: 公开了一种用于提供磁存储器的方法和系统。 该方法和系统包括提供多个磁性元件并提供至少一个应力辅助层。 多个磁性元件中的每一个被配置为使用自旋转移来写入。 所述至少一个应力辅助层被配置为在写入期间在所述多个磁性元件中的至少一个磁性元件上施加至少一个应力。 自旋转移切换电流的减少归因于写入期间应力辅助层施加在磁性元件上的应力。 磁存储器相对于热波动的稳定性不会受到影响，因为一旦切换电流关闭，两个磁化状态之间的能量势垒就不会改变。

公开(公告)号：WO2006071724A2

公开(公告)日：2006-07-06

申请号：PCT/US2005/046584

申请日：2005-12-22

Applicant: GRANDIS, INC. ,  HUAI, Yiming ,  PAKALA, Mahendra

Inventor： HUAI, Yiming ,  PAKALA, Mahendra

IPC: H01L21/00 ,  H01L29/94 ,  G11C11/22

CPC classification number: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  H01F10/3204 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3272 ,  H01F10/3281 ,  H01F10/3286 ,  H01F41/302

Abstract: A method and system for providing a magnetic element are disclosed. The method and system include providing first and second pinned layers, a free layer, and first and second barrier layers between the first and second pinned layers, respectively, and the free layer. The first barrier layer is preferably crystalline MgO, which is insulating, and configured to allow tunneling through the first barrier layer. Furthermore, the first barrier layer has an interface with another layer, such as the free layer or the first pinned layer. The interface has a structure that provides a high spin polarization of at least fifty percent and preferably over eighty percent. The second barrier layer is insulating and configured to allow tunneling through the second barrier layer. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.

Abstract translation: 公开了一种用于提供磁性元件的方法和系统。 该方法和系统包括分别在第一和第二被钉扎层之间提供第一和第二钉扎层，自由层以及第一和第二阻挡层以及自由层。 第一阻挡层优选是结晶的MgO，其是绝缘的，并且被配置为允许隧道穿过第一阻挡层。 此外，第一阻挡层具有与另一层（例如自由层或第一固定层）的界面。 界面具有提供至少百分之五十，优选百分之八十以上的高自旋极化的结构。 第二阻挡层是绝缘的并且被配置为允许隧道穿过第二阻挡层。 磁性元件被配置为当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。

公开(公告)号：WO2005079348A2

公开(公告)日：2005-09-01

申请号：PCT/US2005/004557

申请日：2005-02-11

Applicant: GRANDIS, INC. ,  HUAI, Yiming ,  PAKALA, Mahendra

Inventor： HUAI, Yiming ,  PAKALA, Mahendra

IPC: G11C11/14 ,  G11C11/16

CPC classification number: H01L43/08 ,  G11C11/16 ,  G11C11/1675

Abstract: A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, free, and heat assisted switching layers. The spacer layer resides between the pinned and free layers. The free layer resides between the spacer and heat assisted switching layers. The heat assisted switching layer improves thermal stability of the free layer when the free layer is not being switched, preferably by exchange coupling with the free layer. The free layer is switched using spin transfer when a write current is passed through the magnet element. The write current preferably also heats the magnetic element to reduce the stabilization of the free layer provided by the heat assisted switching layer. In another aspect, the magnetic element also includes a second free layer, a second, nonmagnetic spacer layer, and a second pinned layer. The heat assisted switching layer resides between the two free layers, which are magnetostatically coupled. The second spacer layer resides between the second free and second pinned layers.

Abstract translation: 公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。 磁性元件包括固定，非磁性间隔物，自由和热辅助开关层。 间隔层位于固定层和自由层之间。 自由层位于间隔件和热辅助切换层之间。 当自由层不被切换时，优选通过与自由层的交换耦合，热辅助切换层改善了自由层的热稳定性。 当写入电流通过磁体元件时，使用自旋转移来切换自由层。 写入电流优选还加热磁性元件以减少由热辅助切换层提供的自由层的稳定性。 在另一方面，磁性元件还包括第二自由层，第二非磁性间隔层和第二固定层。 热辅助切换层位于两个自由层之间，这两个自由层是静磁耦合的。 第二间隔层位于第二自由和第二被钉扎层之间。

公开(公告)号：WO2007075889A3

公开(公告)日：2007-07-05

申请号：PCT/US2006/048793

申请日：2006-12-21

Applicant: GRANDIS INC. ,  HUAI, Yiming ,  DIAO, Zhitao ,  PANCHULA, Alex ,  CHEN, Eugene Youjun ,  WANG, Lien-Chang

Inventor： HUAI, Yiming ,  DIAO, Zhitao ,  PANCHULA, Alex ,  CHEN, Eugene Youjun ,  WANG, Lien-Chang

IPC: G11C11/22

Abstract: Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having one or more spin diffusion layers to diffuse the electron spins outside the MTJ or spin valve structure to reduce the spin transfer switching current for switching the free layer.

公开(公告)号：WO2005082061A2

公开(公告)日：2005-09-09

申请号：PCT/US2005/006161

申请日：2005-02-24

Applicant: GRANDIS, INC. ,  NGUYEN, Paul, P. ,  HUAI, Yiming

Inventor： NGUYEN, Paul, P. ,  HUAI, Yiming

IPC: G11C11/16 ,  G11C17/02 ,  H01F10/30 ,  H01F10/32 ,  H01F41/30 ,  H01L31/119 ,  H01L43/00 ,  H01L43/08

CPC classification number: H01F41/302 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/30 ,  H01F10/3236 ,  H01F10/3263 ,  H01F10/3272 ,  H01F10/3286 ,  H01L43/08 ,  Y10T428/26 ,  Y10T428/261 ,  Y10T428/265

Abstract: A method and System for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. At least one free layer has a high perpendicular anisotropy. The high perpendicular anisotropy has a perpendicular anisotropy energy that is at least twenty and less than one hundred percent of the out-of­plane demagnetization energy.

Abstract translation: 公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。 磁性元件包括固定的，非磁性的隔离层和自由层。 间隔层位于钉扎层和自由层之间。 当写入电流通过磁性元件时，可以使用自旋转移来切换自由层。 磁性元件还可以包括阻挡层，第二被钉扎层。 或者，包括静态耦合到自由层的第二固定和第二间隔层和第二自由层。 至少一个自由层具有高的垂直各向异性。 高垂直各向异性具有垂直各向异性能，其至少为外面退磁能的百分之二十。

公开(公告)号：WO2005079528A2

公开(公告)日：2005-09-01

申请号：PCT/US2005/005448

申请日：2005-02-18

Applicant: GRANDIS, INC. ,  NGUYEN, Paul, P. ,  HUAI, Yiming ,  DIAO, Zhitao ,  ALBERT, Frank

Inventor： NGUYEN, Paul, P. ,  HUAI, Yiming ,  DIAO, Zhitao ,  ALBERT, Frank

IPC: G11C11/15 ,  G11C11/16 ,  H01F10/16 ,  H01F10/32 ,  H01F41/30 ,  H01H9/00 ,  H01L43/10

CPC classification number: H01L43/10 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/16 ,  H01F10/3263 ,  H01F10/3272 ,  H01F41/303

Abstract: A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and/or ferrimagnetically doped to provide low saturation magnetization(s).

Abstract translation: 公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。 磁性元件包括固定，非磁性间隔物和自由层。 间隔层位于固定层和自由层之间。 当写入电流通过磁性元件时，可以使用自旋转移来切换自由层。 磁性元件还可以包括阻挡层，第二固定层。 或者，包括第二固定和第二间隔层和静电耦合到自由层的第二自由层。 在一个方面，自由层包括用非磁性材料稀释的铁磁材料和/或亚铁磁掺杂以提供低的饱和磁化强度。

公开(公告)号：WO2009026249A1

公开(公告)日：2009-02-26

申请号：PCT/US2008/073512

申请日：2008-08-18

Applicant: GRANDIS INC. ,  RENESAS TECHNOLOGY CORP. ,  NAGAI, Hide ,  DIAO, Zhitao ,  HUAI, Yiming

Inventor： NAGAI, Hide ,  DIAO, Zhitao ,  HUAI, Yiming

IPC: G11C11/15 ,  G11B5/127

CPC classification number: G11C11/1675 ,  G11C11/161 ,  G11C11/1659

Abstract: A magnetic device including a magnetic element is described. The magnetic element includes a fixed layer having a fixed layer magnetization, a spacer layer that is nonmagnetic, and a free layer having a free layer magnetization. The free layer is changeable due to spin transfer when a write current above a threshold is passed through the first free layer. The free layer includes a low saturation magnetization material.

Abstract translation: 描述包括磁性元件的磁性装置。 磁性元件包括具有固定层磁化的固定层，非磁性的间隔层和具有自由层磁化的自由层。 当超过阈值的写入电流通过第一自由层时，由于自旋转移，自由层是可变的。 自由层包括低饱和磁化材料。