公开(公告)号：WO2015001583A1

公开(公告)日：2015-01-08

申请号：PCT/JP2013/004081

申请日：2013-07-01

Applicant: HITACHI, LTD.

Inventor： DIGUNA, Lina Jaya ,  OKAMOTO, Masahide ,  TAMAKI, Kenji

IPC: G01R31/28 ,  H01L21/52

CPC classification number: G01R31/048 ,  G01R31/003 ,  G01R31/2817 ,  G01R31/2818 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/04042 ,  H01L2224/27462 ,  H01L2224/27464 ,  H01L2224/27849 ,  H01L2224/29082 ,  H01L2224/29101 ,  H01L2224/29155 ,  H01L2224/29655 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2224/83908 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/13091 ,  H01L2924/20105 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2924/014

Abstract: The problem to be solved by the present invention is to provide a substrate for providing early warning of degradation in a semiconductor device. The problem is solved by providing a substrate comprising an actual device comprising a semiconductor component and a solder joint, and a dummy device closely placed to the actual device on the substrate and connected electrically in parallel circuit to the actual device, comprising a dummy semiconductor component and a solder joint comprising an outer solder joint part and an inner solder joint part, wherein the outer solder joint part has same characteristic to the solder joint of the actual device and the inner solder joint part accelerates the crack growth faster than the outer solder joint, and percentage area of outer solder joint part is smaller than the predetermined failure criterion of delamination percentage in actual device corresponding to the threshold value of electrical change.

Abstract translation: 本发明要解决的问题是提供一种用于在半导体器件中提供劣化的预警的基板。 该问题通过提供一种包括包括半导体部件和焊接接头的实际器件的基板和紧密地放置在基板上的实际器件上的虚设装置来解决，并且与实际器件电并联电路，包括虚拟半导体部件 以及包括外部焊接部和内部焊点部的焊接接合部，其中，外部焊点部与实际器件的焊点具有相同的特性，内部焊点部比加工外部焊点更快地加速裂纹生长 ，外部焊点部分的百分比面积小于实际装置中对应于电气变化阈值的分层百分比的预定失效标准。