SPALLING FOR A SEMICONDUCTOR SUBSTRATE
    2.
    发明申请
    SPALLING FOR A SEMICONDUCTOR SUBSTRATE 审中-公开
    用于半导体衬底的分离

    公开(公告)号:WO2011106203A3

    公开(公告)日:2011-11-17

    申请号:PCT/US2011024948

    申请日:2011-02-16

    Abstract: A method for spalling a layer from an ingot of a semiconductor substrate includes forming a metal layer on the ingot of the semiconductor substrate, wherein a tensile stress in the metal layer is configured to cause a fracture in the ingot; and removing the layer from the ingot at the fracture. A system for spalling a layer from an ingot of a semiconductor substrate includes a metal layer formed on the ingot of the semiconductor substrate, wherein a tensile stress in the metal layer is configured to cause a fracture in the ingot, and wherein the layer is configured to be removed from the ingot at the fracture.

    Abstract translation: 一种用于从半导体衬底的晶锭剥落层的方法包括:在半导体衬底的晶块上形成金属层,其中金属层中的拉伸应力被配置为引起晶块中的断裂; 并在裂缝处从锭块中去除层。 用于从半导体衬底的晶锭剥落层的系统包括形成在半导体衬底的晶锭上的金属层,其中金属层中的拉应力被配置为引起晶块中的断裂,并且其中该层被配置 在骨折处从锭块中移出。

    REMOVAL OF STRESSOR LAYER FROM A SPALLED LAYER AND METHOD OF MAKING A BIFACIAL SOLAR CELL USING THE SAME
    3.
    发明申请
    REMOVAL OF STRESSOR LAYER FROM A SPALLED LAYER AND METHOD OF MAKING A BIFACIAL SOLAR CELL USING THE SAME 审中-公开
    从粉末层去除压力层和使用其制造双极太阳能电池的方法

    公开(公告)号:WO2013181117A3

    公开(公告)日:2014-04-03

    申请号:PCT/US2013042772

    申请日:2013-05-24

    Applicant: IBM

    CPC classification number: H01L31/0684 H01L21/02002 H01L31/1896 Y02E10/547

    Abstract: A stressor layer used in a controlled spalling method is removed through the use of a cleave layer that can be fractured or dissolved. The cleave layer is formed between a host semiconductor substrate and the metal stressor layer. A controlled spalling process separates a relatively thin residual host substrate layer from the host substrate. Following attachment of a handle substrate to the residual substrate layer or other layers subsequently formed thereon, the cleave layer is dissolved or otherwise compromised to facilitate removal of the stressor layer. Such removal allows the fabrication of a bifacial solar cell.

    Abstract translation: 以受控剥落方式使用的应力层通过使用可以断裂或溶解的裂开层去除。 在主体半导体衬底和金属应力层之间形成切割层。 受控的剥落过程将相对薄的残余主体衬底层与主体衬底分离。 在将手柄衬底附接到残留衬底层或随后在其上形成的其它层之后,解理层被溶解或以其他方式受到损害以便于去除应力层。 这种去除允许制造双面太阳能电池。

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