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1.发明申请COMPOSITE SUBSTRATE WITH ALTERNATING PATTERN OF DIAMOND AND METAL OR METAL ALLOY 审中-公开具有金刚石和金属或金属合金的替代图案的复合基板
公开(公告)号：WO2016126787A1
公开(公告)日：2016-08-11
申请号：PCT/US2016/016316
申请日：2016-02-03
申请人： II-VI INCORPORATED
发明人： XU, Wen-Qing , LIU, Chao , BARBAROSSA, Giovanni , EISSLER, Elgin, E. , ANDERSON, Thomas, E. , KRAISINGER, Charles, J. , LICHTENSTEIN, Norbert
IPC分类号： H01L21/3213
CPC分类号： H01L23/3732 , H01L23/3736 , H01L23/49838 , H01L23/49866 , H01L23/49894 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/40 , H01L24/83 , H01L25/0655 , H01L33/641 , H01L33/642 , H01L2224/16227 , H01L2224/291 , H01L2224/2919 , H01L2224/32225 , H01L2224/40139 , H01L2224/40151 , H01L2224/73263 , H01L2224/83424 , H01L2224/83438 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/83455 , H01L2224/83463 , H01L2224/83466 , H01L2224/83469 , H01L2224/8347 , H01L2224/83471 , H01L2224/83479 , H01L2224/8348 , H01L2224/83484 , H01L2224/83493 , H01L2224/83801 , H01L2224/83851 , H01L2924/00014 , H01L2924/10329 , H01L2924/12041 , H01L2924/12042 , H01L2924/014 , H01L2924/01006 , H01L2924/0781 , H01L2924/01014 , H01L2924/01072 , H01L2924/01074 , H01L2224/37099
摘要： A composite substrate includes a submount substrate of an alternating pattern of electrically insulative portions, pieces, layers or segments and electrically conductive portions, pieces, layers or segments, and a shaft, back or plate for supporting the alternating pattern of electrically insulative portions and electrically conductive portions. An active device having a P-N junction can be mounted on the submount substrate. The electrically insulative portions, pieces, layers or segments can be formed from diamond while the electrically conductive portions, pieces, layers or segments can be formed from a metal or metal alloy.
摘要翻译： 复合基板包括电绝缘部分，片，层或片段和导电部分，片，层或片段的交替图案的副安装座基板，以及用于支撑电绝缘部分的交替图案和电绝缘部分的电极 导电部分。 具有P-N结的有源器件可以安装在副安装座基板上。 电绝缘部分，片，层或片段可以由金刚石形成，而导电部分，片，层或片段可以由金属或金属合金形成。
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2.发明申请HIGHLY TWINNED, ORIENTED POLYCRYSTALLINE DIAMOND FILM AND METHOD OF MANUFACTURE THEREOF 审中-公开高双面，方向的多晶金刚石薄膜及其制造方法
公开(公告)号：WO2016073233A1
公开(公告)日：2016-05-12
申请号：PCT/US2015/057339
申请日：2015-10-26
申请人： II-VI INCORPORATED
发明人： XU, Wen-Qing , LIU, Chao , KRAISINGER, Charles, Jr. , TANNER, Charles, D. , CURRIER, Ian , SABENS, David , EISSLER, Elgin, E. , ANDERSON, Thomas, E.
CPC分类号： C30B28/14 , C01B32/25 , C30B29/04 , C30B29/605 , H01B1/04
摘要： In a method of chemical vapor deposition (CVD) growth of a polycrystalline diamond film in a CVD reactor, a gas mixture of gaseous hydrogen and a gaseous hydrocarbon is introduced into the CVD reactor. A plasma formed from the gas mixture is maintained above a surface of a conductive substrate disposed in the CVD reactor and causes a polycrystalline diamond film to grow on the surface of the conductive substrate. A temperature T at the center of the polycrystalline diamond film is controlled during growth of the polycrystalline diamond film. The CVD grown polycrystalline diamond film includes diamond crystallites that can have a percentage of orientation along a [110] diamond lattice direction > 70% of the total number of diamond crystallites forming the polycrystalline diamond film.
摘要翻译： 在CVD反应器中的多晶金刚石膜的化学气相沉积（CVD）生长方法中，将气态氢气和气态烃的气体混合物引入到CVD反应器中。 由气体混合物形成的等离子体保持在设置在CVD反应器中的导电基板的表面上方，并使多晶金刚石膜在导电基板的表面上生长。 多晶金刚石膜的中心处的温度T在多晶金刚石膜的生长期间被控制。 CVD生长的多晶金刚石膜包括金刚石微晶，其可以具有沿[110]金刚石晶格方向的取向百分比>形成多晶金刚石膜的金刚石微晶的总数的70％。
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3.发明申请OPTICALLY-FINISHED THIN DIAMOND SUBSTRATE OR WINDOW OF HIGH ASPECT RATIO AND A METHOD OF PRODUCTION THEREOF 审中-公开光学完成的金刚石衬底或高纵横比的窗户及其生产方法
公开(公告)号：WO2016168796A1
公开(公告)日：2016-10-20
申请号：PCT/US2016/028031
申请日：2016-04-18
申请人： II-VI INCORPORATED
发明人： XU, Wen-Qing , LIU, Chao , EISSLER, Elgin, E. , BARBAROSSA, Giovanni , TANNER, Charles, D. , ANDERSON, Thomas, E.
IPC分类号： C23C16/27 , C23C16/56 , C23C16/453 , C23C16/455
CPC分类号： C23C16/274 , C23C16/01 , C23C16/511 , C23C16/56
摘要： In a method of forming a diamond film, substrate, or window, a silicon substrate is provided and the diamond film, substrate, or window is CVD grown on a surface of the silicon substrate. The grown diamond film, substrate, or window has an aspect ratio > 100, wherein the aspect ratio is a ratio of a largest dimension of the diamond film, substrate or window divided by a thickness of the diamond film. The silicon substrate can optionally be removed or separated from the grown diamond film, substrate, or window.
摘要翻译： 在形成金刚石膜，衬底或窗口的方法中，提供硅衬底，并且在硅衬底的表面上CVD生长金刚石膜，衬底或窗口。 生长的金刚石膜，基底或窗口具有纵横比 100，其中纵横比是金刚石膜，基底或窗口的最大尺寸除以金刚石膜的厚度之比 。 可以可选地从生长的金刚石膜，基底或窗口去除或分离硅衬底。
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4.发明申请
公开(公告)号：WO2015112574A2
公开(公告)日：2015-07-30
申请号：PCT/US2015/012208
申请日：2015-01-21
申请人： II-VI INCORPORATED
发明人： XU, Wen-Qing , EISSLER, Elgin, E. , LIU, Chao , TANNER, Charles, D. , KRAISINGER, Charles, J. , AGHAJANIAN, Michael
IPC分类号： C04B41/87
CPC分类号： C30B25/02 , C01B32/25 , C04B35/52 , C04B35/565 , C04B35/573 , C04B35/634 , C04B41/009 , C04B41/5002 , C04B41/85 , C04B2235/3826 , C04B2235/427 , C04B2235/5427 , C04B2235/5436 , C04B2235/602 , C04B2235/604 , C04B2235/6581 , C04B2235/77 , C04B2235/80 , C04B2235/96 , C04B2235/9607 , C23C16/274 , C23C16/279 , C23C16/463 , C23C16/56 , C23C28/04 , C23C28/046 , Y10T428/21 , Y10T428/24355 , Y10T428/24612 , Y10T428/24893 , Y10T428/26 , Y10T428/265 , Y10T428/30 , C04B41/4531
摘要： A multilayer substrate includes a diamond layer CVD grown on a composite layer. The composite layer includes particles of diamond and silicon carbide and, optionally, silicon. A loading level (by volume) of diamond in the composite layer can be ≥ 5 %; ≥ 20 %; ≥ 40 %; or ≥ 60 %. The multilayer substrate can be used as an optical device; a detector for detecting radiation particles or electromagnetic waves; a device for cutting, drilling, machining, milling, lapping, polishing, coating, bonding, or brazing; a braking device; a seal; a heat conductor; an electromagnetic wave conductor; a chemically inert device for use in a corrosive environment, a strong oxidizing environment, or a strong reducing environment, at an elevated temperature, or under a cryogenic condition; or a device for polishing or planarization of other devices, wafers or films.
摘要翻译： 多层基板包括在复合层上生长的金刚石层CVD。 复合层包括金刚石和碳化硅颗粒，以及任选的硅。 复合层中金刚石的负载量（体积）可以≥5％; ≥20％; ≥40％; 或≥60％。 多层基板可以用作光学装置; 用于检测辐射粒子或电磁波的检测器; 用于切割，钻孔，加工，铣削，研磨，抛光，涂覆，粘合或钎焊的装置; 制动装置; 印章; 导热体 电磁波导体; 在高温或低温条件下用于腐蚀环境，强氧化环境或强还原环境的化学惰性装置; 或用于抛光或平面化其他器件，晶片或膜的器件。
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5.发明申请COMPOSITE EXTRACTANT-ENHANCED POLYMER RESIN, METHOD OF MAKING THE SAME, AND ITS USAGE FOR EXTRACTION OF VALUABLE METAL(S) 审中-公开复合萃取剂增强聚合物树脂，其制备方法及其在提取有价金属（S）
公开(公告)号：WO2017074921A1
公开(公告)日：2017-05-04
申请号：PCT/US2016/058630
申请日：2016-10-25
申请人： II-VI INCORPORATED
发明人： XU, Wen-Qing , MATTERA, Vincent, D., Jr. , ABELLA, Marie Ysabel, R. , ABRENICA, Gomer, M. , PATKAR, Shailesh
CPC分类号： B01J49/53 , B01J39/16 , B01J47/016 , B01J49/06 , C22B3/0068 , C22B59/00 , Y02P10/234
摘要： A composite extractant-enhanced polymer resin comprising an extractant and a polymer resin for direct extraction of valuable metals such as rare earth metals, and more specifically, scandium, from an acid-leaching slurry and/or acid-leaching solution in which ferric ions are not required to be reduced into ferrous ions. The extractant may be cationic, non-ionic, or anionic. More specifically, the extractant di(2-ethylhexyl)phosphoric acid may be used. The polymer resin may be non-functional or have functional groups of sulfonic acid, carboxylic acid, iminodiacetic acid, phosphoric acid, or amines. The composite extractant-enhanced polymer resin may be used for extraction of rare earth metals from acid-leaching slurries or solutions.
摘要翻译： 包含萃取剂和聚合物树脂的复合萃取剂增强的聚合物树脂，用于从酸浸浆液和/或酸中直接萃取有价值的金属如稀土金属，更具体地说是钪 - 不需要将铁离子还原成亚铁离子的浸出溶液。 萃取剂可以是阳离子的，非离子的或阴离子的。 更具体地说，可以使用萃取剂二（2-乙基己基）磷酸。 聚合物树脂可以是非功能性的或具有磺酸，羧酸，亚氨基二乙酸，磷酸或胺的官能团。 复合萃取剂增强聚合物树脂可用于从酸浸浆液或溶液中萃取稀土金属。
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6.发明申请APPARATUS AND METHOD OF MANUFACTURING FREE STANDING CVD POLYCRYSTALLINE DIAMOND FILMS 审中-公开制造自由立体CVD多晶金刚石膜的装置和方法
公开(公告)号：WO2016100115A1
公开(公告)日：2016-06-23
申请号：PCT/US2015/065228
申请日：2015-12-11
申请人： II-VI INCORPORATED
发明人： SABENS, David , LIU, Chao , TANNER, Charles, D. , XU, Wen-Qing
IPC分类号： C23C16/27 , C23C16/44 , C23C16/50 , C23C16/511 , C23C16/513 , C23C16/56
CPC分类号： C23C16/274 , C23C16/276 , C23C16/4583 , C23C16/466 , C23C16/52
摘要： In a system and method of growing a diamond film, a cooling gas flows between a substrate and a substrate holder of a plasma chamber and a process gas flows into the plasma chamber. In the presence of an plasma in the plasma chamber, a temperature distribution across the top surface of the substrate and/or across a growth surface of the growing diamond film is controlled whereupon, during diamond film growth, the temperature distribution is controlled to have a predetermined temperature difference between a highest temperature and a lowest temperature of the temperature distribution. The as-grown diamond film has a total thickness variation (TTV)
摘要翻译： 在生长金刚石薄膜的系统和方法中，冷却气体在基板和等离子体室的基板支架之间流动，工艺气体流入等离子体室。 在等离子体室中存在等离子体的情况下，控制衬底的顶表面和/或穿过生长的金刚石膜的生长表面的温度分布，随后在金刚石膜生长期间，将温度分布控制为具有 温度分布的最高温度和最低温度之间的预定温度差。 原生金刚石薄膜的总厚度变化（TTV）<10％，<5％或<1％; 0和100nm / cm，0和80nm / cm，0和60nm / cm，0和40nm / cm，0和20nm / cm，0和10nm / cm之间的双折射率，或0 和5nm / cm。
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