公开(公告)号：WO2008010943A3

公开(公告)日：2009-04-09

申请号：PCT/US2007015928

申请日：2007-07-13

Applicant: LAM RES CORP ,  MARAKHTANOV ALEXEI ,  DHINDSA RAJINDER ,  HUDSON ERIC ,  FISCHER ANDREAS

Inventor： MARAKHTANOV ALEXEI ,  DHINDSA RAJINDER ,  HUDSON ERIC ,  FISCHER ANDREAS

IPC: H01L21/306 ,  C23C16/00

CPC classification number: H01J37/321 ,  H01J37/32091 ,  H01J2237/03

Abstract: A device for inductively confining capacitively coupled RF plasma formed in a plasma processing apparatus. The apparatus includes an upper electrode and a lower electrode that is adapted to support a substrate and to generate the plasma between the substrate and the upper electrode. The device includes a dielectric support ring that concentrically surrounds the upper electrode and a plurality of coil units mounted on the dielectric support ring. Each coil unit includes a ferromagnetic core positioned along a radial direction of the dielectric support ring and at least one coil wound around each ferromagnetic core. The coil units generate, upon receiving RF power from an RF power source, electric and magnetic fields that reduce the number of charged particles of the plasma diffusing away from the plasma.

Abstract translation: 用于感应地限制在等离子体处理装置中形成的电容耦合RF等离子体等离子体的装置。 该装置包括上电极和下电极，其适于支撑衬底并在衬底和上电极之间产生等离子体。 该装置包括同心地围绕上电极的电介质支撑环和安装在电介质支撑环上的多个线圈单元。 每个线圈单元包括沿着电介质支撑环的径向定位的铁磁芯和缠绕在每个铁磁芯周围的至少一个线圈。 线圈单元在从RF电源接收到RF功率时产生电场和磁场，其减少等离子体的带电粒子的数量远离等离子体扩散。

公开(公告)号：WO2010080421A4

公开(公告)日：2010-10-07

申请号：PCT/US2009068186

申请日：2009-12-16

Applicant: LAM RES CORP ,  FISCHER ANDREAS ,  HUDSON ERIC

Inventor： FISCHER ANDREAS ,  HUDSON ERIC

IPC: H05H1/36 ,  H01L21/3065

CPC classification number: H01J37/32623 ,  H01J37/32091

Abstract: A plasma processing system for processing at least a substrate with plasma. The plasma processing chamber is capable of controlling ion energy distribution. The plasma processing system may include a first electrode. The plasma processing system also includes a second electrode that is different from the first electrode and is configured for bearing the substrate. The plasma processing system may also include a signal source coupled with the first electrode. The signal source may provide a non-sinusoidal signal through the first electrode to control ion energy distribution at the substrate when the substrate is processed in the plasma processing system, wherein the non-sinusoidal signal is periodic.

Abstract translation: 用等离子体处理至少一个衬底的等离子体处理系统。 等离子体处理室能够控制离子能量分布。 等离子体处理系统可以包括第一电极。 等离子体处理系统还包括第二电极，该第二电极不同于第一电极并被配置用于承载衬底。 等离子体处理系统还可以包括与第一电极耦合的信号源。 当在等离子体处理系统中处理衬底时，信号源可以通过第一电极提供非正弦信号，以控制衬底处的离子能量分布，其中非正弦信号是周期性的。

公开(公告)号：WO2010071785A3

公开(公告)日：2010-10-14

申请号：PCT/US2009068195

申请日：2009-12-16

Applicant: LAM RES CORP ,  HUDSON ERIC ,  FISCHER ANDREAS

Inventor： HUDSON ERIC ,  FISCHER ANDREAS

IPC: H05H1/24 ,  H05H1/34

CPC classification number: C23C16/00 ,  C23F1/00 ,  H01J37/32082 ,  H01J37/32623

Abstract: A movable plasma confinement structure configured for confining plasma in a plasma processing chamber during plasma processing of a substrate is provided. The movable plasma confinement structure includes a movable plasma-facing structure configured to surround the plasma. The movable plasma confinement structure also includes a movable electrically conductive structure disposed outside of the movable plasma-facing structure and configured to be deployed and retracted with the movable plasma-facing structure as a single unit to facilitate handling of the substrate. The movable electrically conductive structure is radio frequency (RF) grounded during the plasma processing. The movable plasma-facing structure is disposed between the plasma and the movable electrically conductive structure during the plasma processing such that RF current from the plasma flows to the movable electrically conductive structure through the movable plasma-facing structure during the plasma processing.

Abstract translation: 提供了一种可移动的等离子体约束结构，其被配置用于在等离子体处理基板期间将等离子体限制在等离子体处理室中。 可移动的等离子体约束结构包括构造成围绕等离子体的可移动的面向等离子体的结构。 可移动的等离子体约束结构还包括可移动的导电结构，该可移动的导电结构布置在可移动的面向等离子体的结构的外部并且被配置为与可移动的面向等离子体的结构一起作为单个单元展开和缩回以便于处理基板。 可移动导电结构在等离子体处理期间是射频（RF）接地。 在等离子体处理期间，可移动的面向等离子体的结构设置在等离子体和可移动的导电结构之间，使得来自等离子体的RF电流在等离子体处理期间通过可移动的面向等离子体的结构流向可移动的导电结构。

公开(公告)号：WO2010080420A2

公开(公告)日：2010-07-15

申请号：PCT/US2009068183

申请日：2009-12-16

Applicant: LAM RES CORP ,  FISCHER ANDREAS ,  HUDSON ERIC

Inventor： FISCHER ANDREAS ,  HUDSON ERIC

IPC: H05H1/34

CPC classification number: H01J37/32091 ,  H01J37/32449 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32816 ,  H01J37/3299 ,  H01L21/3065

Abstract: A plasma processing system having a plasma processing chamber configured for processing a substrate is provided. The plasma processing system includes at least an upper electrode and a lower electrode for processing the substrate. The substrate is disposed on the lower electrode during plasma processing, where the upper electrode and the substrate forms a first gap. The plasma processing system also includes an upper electrode peripheral extension (UE-PE). The UE-PE is mechanically coupled to a periphery of the upper electrode, where the UE-PE is configured to be non-coplanar with the upper electrode. The plasma processing system further includes a cover ring. The cover ring is configured to concentrically surround the lower electrode, where the UE-PE and the cover ring forms a second gap.

Abstract translation: 提供了一种等离子体处理系统，具有配置用于处理基板的等离子体处理室。 等离子体处理系统至少包括用于处理基板的上电极和下电极。 在等离子体处理期间，衬底布置在下电极上，其中上电极和衬底形成第一间隙。 等离子体处理系统还包括上电极外围扩展（UE-PE）。 UE-PE机械耦合到上电极的外围，其中UE-PE被配置为与上电极不共面。 等离子体处理系统还包括盖环。 覆盖环配置成同心地围绕下电极，其中UE-PE和覆盖环形成第二间隙。

公开(公告)号：WO2010080421A2

公开(公告)日：2010-07-15

申请号：PCT/US2009068186

申请日：2009-12-16

Applicant: LAM RES CORP ,  FISCHER ANDREAS ,  HUDSON ERIC

Inventor： FISCHER ANDREAS ,  HUDSON ERIC

IPC: H05H1/36 ,  H01L21/3065

CPC classification number: H01J37/32623 ,  H01J37/32091

Abstract: A plasma processing system for processing at least a substrate with plasma. The plasma processing chamber is capable of controlling ion energy distribution. The plasma processing system may include a first electrode. The plasma processing system also includes a second electrode that is different from the first electrode and is configured for bearing the substrate. The plasma processing system may also include a signal source coupled with the first electrode. The signal source may provide a non-sinusoidal signal through the first electrode to control ion energy distribution at the substrate when the substrate is processed in the plasma processing system, wherein the non-sinusoidal signal is periodic.

Abstract translation: 一种等离子体处理系统，用于至少用等离子体处理衬底。 等离子体处理室能够控制离子能量分布。 等离子体处理系统可以包括第一电极。 等离子体处理系统还包括与第一电极不同的第二电极，并且构造成用于承载衬底。 等离子体处理系统还可以包括与第一电极耦合的信号源。 当在等离子体处理系统中处理衬底时，信号源可以通过第一电极提供非正弦信号以控制衬底处的离子能量分布，其中非正弦信号是周期性的。

公开(公告)号：WO2007149694A3

公开(公告)日：2008-03-20

申请号：PCT/US2007070265

申请日：2007-06-01

Applicant: LAM RES CORP ,  HUDSON ERIC ,  FISCHER ANDREAS

Inventor： HUDSON ERIC ,  FISCHER ANDREAS

IPC: C23C16/00

CPC classification number: H01J37/32862 ,  B08B7/0035 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32596

Abstract: An apparatus used for rapid removal of polymer films from plasma confinement rings while minimizing erosion of other plasma etch chamber components is disclosed. The apparatus includes a center assembly, an electrode plate, a confinement ring stack, a first plasma source, and a second plasma source. The electrode plate is affixed to a surface of the center assembly with a channel defined along the external circumference therein. A first plasma source is disposed within the channel and along the external circumference of the center assembly, wherein the first plasma source is configured to direct a plasma to the inner circumferential surface of the confinement ring stack. A second plasma source located away from the first plasma source is configured to perform processing operations on a substrate within the etch chamber.

Abstract translation: 公开了一种用于从等离子体限制环快速除去聚合物膜同时最小化其它等离子体蚀刻室部件的侵蚀的装置。 该装置包括中心组件，电极板，约束环叠层，第一等离子体源和第二等离子体源。 电极板被固定到中心组件的表面，其中沿着外圆周限定了通道。 第一等离子体源设置在通道内并且沿着中心组件的外圆周，其中第一等离子体源被配置为将等离子体引导到限制环堆叠的内圆周表面。 位于远离第一等离子体源的第二等离子体源被配置为在蚀刻室内的衬底上执行处理操作。

公开(公告)号：WO2007145801A2

公开(公告)日：2007-12-21

申请号：PCT/US2007012581

申请日：2007-05-25

Applicant: LAM RES CORP ,  KEIL DOUGLAS ,  HUDSON ERIC ,  KIMBALL CHRIS ,  FISCHER ANDREAS

Inventor： KEIL DOUGLAS ,  HUDSON ERIC ,  KIMBALL CHRIS ,  FISCHER ANDREAS

IPC: C23C14/00

CPC classification number: C23C16/52 ,  C23C16/509 ,  H01J37/32935 ,  H01J37/3299

Abstract: A method of fault detection for use in a plasma processing chamber is provided. The method comprises monitoring plasma parameters within a plasma chamber and analyzing the resulting information. Such analysis enables detection of failures and the diagnosis of failure modes in a plasma processing reactor during the course of wafer processing. The method comprises measuring the plasma parameters as a function of time and analyzing the resulting data. The data can be observed, characterized, compared with reference data, digitized, processed, or analyzed in any way to reveal a specific fault. Monitoring can be done with a detector such as a probe, which is preferably maintained within the plasma chamber substantively coplanar with a surface within the chamber, and directly measures net ion flux and other plasma parameters. The detector is preferably positioned at a grounded surface within the reactor such as a grounded showerhead electrode, and can be of a planar ion flux probe (PIF) type or a non-capacitive type. Chamber faults that can be detected include a build-up of process by-products in the process chamber, a helium leak, a match re-tuning event, a poor stabilization rate, and a loss of plasma confinement. If the detector is a probe, the probe can be embedded in a part of a plasma processing chamber and can comprises one or more gas feed-through holes.

Abstract translation: 提供了一种用于等离子体处理室的故障检测方法。 该方法包括监测等离子体室内的等离子体参数并分析所得到的信息。 这样的分析使得能够在晶片处理过程中检测等离子体处理反应器中的故障和故障模式的诊断。 该方法包括测量作为时间的函数的等离子体参数并分析所得到的数据。 数据可以观察，表征，与参考数据进行比较，数字化，处理或分析，以显示特定故障。 可以用诸如探针的检测器进行监测，该探针优选地保持在与腔室内的表面基本上共面的等离子体室内，并且直接测量净离子通量和其它等离子体参数。 检测器优选地位于反应器内的接地表面，例如接地喷头电极，并且可以是平面离子通量探针（PIF）型或非电容型。 可以检测到的室内故障包括处理室中的过程副产物的积聚，氦泄漏，匹配重新调谐事件，差的稳定化速率和等离子体约束的损失。 如果检测器是探针，则探针可以嵌入在等离子体处理室的一部分中，并且可以包括一个或多个气体馈通孔。

公开(公告)号：WO2006104841B1

公开(公告)日：2008-02-21

申请号：PCT/US2006010576

申请日：2006-03-24

Applicant: LAM RES CORP ,  HUDSON ERIC ,  KEIL DOUGLAS ,  MARAKHTANOV ALEXEI

Inventor： HUDSON ERIC ,  KEIL DOUGLAS ,  MARAKHTANOV ALEXEI

IPC: B05C11/00 ,  B05C13/00 ,  C23C16/00

CPC classification number: H01J37/32963 ,  H01J37/32935

Abstract: A method of determining an endpoint of a process by measuring a thickness of a layer, the layer being deposited on the surface by a prior process is disclosed. The method includes providing a sensor that is coplanar with the surface, wherein the sensor is configured to measure the thickness. The method also includes exposing the plasma chamber to a plasma, wherein the thickness is changed by the exposing, and determining the thickness as a function of time. The method further includes ascertaining a steady state condition in the thickness, the steady state condition being characterized by a substantially stable measurement of the thickness, a start of the steady state condition representing the endpoint.

Abstract translation: 公开了一种通过测量层的厚度来确定工艺的端点的方法，该层通过先前的工艺沉积在表面上。 该方法包括提供与表面共面的传感器，其中传感器被配置成测量厚度。 该方法还包括将等离子体室暴露于等离子体，其中通过曝光来改变厚度，并且确定作为时间的函数的厚度。 该方法还包括确定厚度中的稳定状态条件，稳态条件的特征在于厚度的基本上稳定的测量，表示端点的稳态条件的开始。

公开(公告)号：WO2010117969A3

公开(公告)日：2011-01-13

申请号：PCT/US2010030019

申请日：2010-04-06

Applicant: LAM RES CORP ,  MARAKHTANOV ALEXEI ,  HUDSON ERIC ,  DHINDSA RAJINDER ,  BAILEY ANDREW

Inventor： MARAKHTANOV ALEXEI ,  HUDSON ERIC ,  DHINDSA RAJINDER ,  BAILEY ANDREW

IPC: H01L21/3065 ,  H05H1/24 ,  H05H1/36

CPC classification number: H01L21/3065 ,  H01J37/32009 ,  H01J37/32137 ,  H01J37/32146 ,  H01J2237/334 ,  H01J2237/3348

Abstract: A method is provided for operating a processing system having a space therein arranged to receive a gas and an electromagnetic field generating portion operable to generate an electromagnetic field within the space. The method includes providing a gas into the space, and operating the electromagnetic field generating portion with a driving potential to generate an electromagnetic field within the space to transform at least a portion of the gas into plasma. The driving potential as a function of time is based on a first potential function portion and a second potential function portion. The first potential function portion comprises a first continuous periodic portion having a first amplitude and a first frequency. The second potential function portion comprises a second periodic portion having an maximum amplitude portion, and minimum amplitude portion and a duty cycle. The maximum amplitude portion is a higher amplitude than the minimum amplitude portion. The duty cycle is the ratio of a duration of the maximum amplitude portion to the sum of the duration of the maximum amplitude portion and the duration of the minimum amplitude portion. The second periodic portion additionally has a second frequency during the maximum amplitude portion. An amplitude modulation of the second periodic portion is phase locked to the first continuous periodic portion.

Abstract translation: 提供了一种操作处理系统的方法，该处理系统具有布置成接收气体的空间和可操作以在该空间内产生电磁场的电磁场产生部分。 所述方法包括向所述空间提供气体，以及利用驱动电位操作所述电磁场产生部分，以在所述空间内产生电磁场，以将所述气体的至少一部分转化为等离子体。 作为时间的函数的驱动电位基于第一潜在功能部分和第二电位功能部分。 第一潜在功能部分包括具有第一幅度和第一频率的第一连续周期部分。 第二电位功能部分包括具有最大振幅部分和最小振幅部分和占空比的第二周期部分。 最大幅度部分比最小振幅部分的幅度更大。 占空比是最大幅度部分的持续时间与最大振幅部分的持续时间和最小振幅部分的持续时间之和的比率。 第二周期部分在最大振幅部分期间另外具有第二频率。 第二周期部分的幅度调制被锁相到第一连续周期部分。

公开(公告)号：WO2006104841A2

公开(公告)日：2006-10-05

申请号：PCT/US2006010576

申请日：2006-03-24

Applicant: LAM RES CORP ,  HUDSON ERIC ,  KEIL DOUGLAS ,  MARAKHTANOV ALEXEI

Inventor： HUDSON ERIC ,  KEIL DOUGLAS ,  MARAKHTANOV ALEXEI

IPC: C23C16/52 ,  B05C11/00 ,  C23C16/00

CPC classification number: H01J37/32963 ,  H01J37/32935

Abstract: A method of determining an endpoint of a process by measuring a thickness of a layer, the layer being deposited on the surface by a prior process is disclosed. The method includes providing a sensor that is coplanar with the surface, wherein the sensor is configured to measure the thickness. The method also includes exposing the plasma chamber to a plasma, wherein the thickness is changed by the exposing, and determining the thickness as a function of time. The method further includes ascertaining a steady state condition in the thickness, the steady state condition being characterized by a substantially stable measurement of the thickness, a start of the steady state condition representing the endpoint.

Abstract translation: 公开了一种通过测量层的厚度来确定工艺的端点的方法，该层通过先前的工艺沉积在表面上。 该方法包括提供与表面共面的传感器，其中传感器被配置成测量厚度。 该方法还包括将等离子体室暴露于等离子体，其中通过曝光来改变厚度，并且确定作为时间的函数的厚度。 该方法还包括确定厚度中的稳定状态条件，稳态条件的特征在于厚度的基本上稳定的测量，表示端点的稳态条件的开始。