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公开(公告)号：WO2018140257A1
公开(公告)日：2018-08-02
申请号：PCT/US2018/013884
申请日：2018-01-16
Applicant: REC SILICON INC
Inventor： MILLER, Matthew, J. , GEERTSEN, Robert, J. , JOHNSTON, Justin , JULSRUD, Stein , YILMAZ, Sefa
CPC classification number: C01B33/037 , C01P2006/80
Abstract: This disclosure concerns embodiments of an annealing device and a method for annealing flowable, finely divided solids, such as annealing granular silicon to reduce a hydrogen content of the granular silicon. The annealing device comprises at least one tube through which flowable, finely divided solids are flowed downwardly. The tube includes a heating zone and (i) a residence zone below the heating zone, (ii) a cooling zone below the heating zone, or (iii) a residence zone below the heating zone and a cooling zone below the residence zone. An inert gas is flowed upwardly through the tube. The tube may be constructed from two or more tube segments. The annealing device may include a plurality of tubes arranged and housed within a shell. The annealing device and method are suitable for a continuous process.
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公开(公告)号：WO2014172102A1
公开(公告)日：2014-10-23
申请号：PCT/US2014/032714
申请日：2014-04-02
Applicant: REC SILICON INC
Inventor： JULSRUD, Stein , SJASTAD, Anja, O.
IPC: C01B33/08 , C01B33/107
CPC classification number: C01B33/1071 , Y02E60/324
Abstract: Methods for reducing iron silicide and/or iron phosphide fouling and/or corrosion in a hydrochlorosilane production plant are disclosed. Sufficient hydrogen is added to a silicon tetrachloride process stream to inhibit iron (II) chloride formation and reduce iron silicide and/or iron phosphide fouling, superheater corrosion, or a combination thereof. Trichlorosilane also may be added to the silicon tetrachloride process stream.
Abstract translation: 公开了在氢氯硅烷生产设备中还原铁硅化物和/或磷化铁结垢和/或腐蚀的方法。 向四氯化硅工艺流中加入足够的氢以抑制氯化铁（II）的形成并减少铁硅化物和/或磷化铁结垢，过热器腐蚀或其组合。 也可以在四氯化硅工艺流中加入三氯硅烷。
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3.发明申请
公开(公告)号：WO2018140259A8
公开(公告)日：2018-08-02
申请号：PCT/US2018/013890
申请日：2018-01-16
Applicant: REC SILICON INC
Inventor： GEERTSEN, Robert, J. , MILLER, Matthew, J. , JOHNSTON, Justin , YILMAZ, Sefa , JULSRUD, Stein
Abstract: This disclosure concerns embodiments of an annealing device and a method for annealing granular silicon to reduce a hydrogen content of the granular silicon. The annealing device comprises at least one tube through which granular silicon is flowed downwardly. The tube includes a heating zone and (i) a residence zone below the heating zone, (ii) a cooling zone below the heating zone, or (iii) a residence zone below the heating zone and a cooling zone below the residence zone. An inert gas is flowed upwardly through the tube. The tube may be constructed from two or more tube segments. The annealing device may include a plurality of tubes arranged in parallel and housed within a shell. The annealing device and method are suitable for a continuous process.
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公开(公告)号：WO2013059686A1
公开(公告)日：2013-04-25
申请号：PCT/US2012/061150
申请日：2012-10-19
Applicant: REC SILICON INC
Inventor： JULSRUD, Stein , SJÅSTAD, Anja, Olafsen
IPC: C01G49/00 , C01B33/107 , B01J19/24
CPC classification number: C01B33/1071 , C01B33/10731 , C01B33/10778
Abstract: Embodiments of a method for reducing iron silicide and/or iron phosphide fouling and/or corrosion in a hydrochlorosilane production plant are disclosed. Sufficient trichlorosilane is included in a silicon tetrachloride process stream to minimize hydrogen chloride formation, thereby inhibiting iron (II) chloride formation and reducing iron silicide and/or iron phosphide fouling, superheater corrosion, or a combination thereof.
Abstract translation: 公开了用于减少氢氯硅烷生产设备中的硅化铁和/或磷化铁结垢和/或腐蚀的方法的实施方案。 在四氯化硅工艺流中包含足够的三氯硅烷以使氯化氢形成最小化，从而抑制氯化铁（II）的形成并减少硅化铁和/或磷化铁结垢，过热器腐蚀或其组合。
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公开(公告)号：WO2018140260A1
公开(公告)日：2018-08-02
申请号：PCT/US2018/013891
申请日：2018-01-16
Applicant: REC SILICON INC.
Inventor： MILLER, Matthew, J. , GEERTSEN, Robert, J. , JULSRUD, Stein , YILMAZ, Sefa , DESBORDES, Raymond
CPC classification number: C01B33/037 , F16L9/22 , F27D3/0033 , F27D3/10 , F27D3/16 , F27D2003/166 , F27D2019/0068 , H05B3/148
Abstract: This disclosure concerns embodiments of an annealing device and a method for annealing granular silicon to reduce a hydrogen content of the granular silicon. The annealing device comprises at least one tube through which granular silicon is flowed downwardly. The tube includes a heating zone and (i) a residence zone below the heating zone, (ii) a cooling zone below the heating zone, or (iii) a residence zone below the heating zone and a cooling zone below the residence zone. An inert gas is flowed upwardly through the tube. The tube may be constructed from two or more tube segments. The annealing device may include a plurality of tubes arranged in parallel and housed within a shell. The annealing device and method are suitable for a continuous process.
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Patent Agency Ranking
公开(公告)号：WO2018140258A1
公开(公告)日：2018-08-02
申请号：PCT/US2018/013888
申请日：2018-01-16
Applicant: REC SILICON INC
Inventor： GEERTSEN, Robert, J. , MILLER, Matthew, J. , JOHNSTON, Justin , JULSRUD, Stein , YILMAZ, Sefa
Abstract: This disclosure concerns embodiments of an annealing device and a method for annealing flowable, finely divided solids, such as annealing granular silicon to reduce a hydrogen content of the granular silicon. The annealing device comprises at least one tube through which flowable, finely divided solids are flowed downwardly. The tube includes a heating zone and (i) a residence zone below the heating zone, (ii) a cooling zone below the heating zone, or (iii) a residence zone below the heating zone and a cooling zone below the residence zone. An inert gas is flowed upwardly through the tube. The tube may be constructed from two or more tube segments. The annealing device may include a plurality of tubes arranged and housed within a shell. The annealing device and method are suitable for a continuous process.
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7.发明申请NON-CONTAMINATING BONDING MATERIAL FOR SEGMENTED SILICON CARBIDE LINER IN A FLUIDIZED BED REACTOR 审中-公开流化床反应器中分离的碳化硅衬里的非接触粘结材料
公开(公告)号：WO2016025011A1
公开(公告)日：2016-02-18
申请号：PCT/US2014/070607
申请日：2014-12-16
Applicant: REC SILICON INC
Inventor： YILMAZ, Sefa , MILLER, Matthew, J. , SPANGLER, Michael, V. , WEMP, Barry , JULSRUD, Stein
IPC: H01L21/02 , H01L21/205
CPC classification number: B01J19/02 , B01J2/006 , B01J2/16 , B01J8/1872 , B01J8/24 , B01J2208/00168 , B32B1/08 , C01B33/021 , C04B35/565 , C04B37/005 , C04B2235/6562 , C04B2235/72 , C04B2235/725 , C04B2235/727 , C04B2237/062 , C04B2237/083 , C04B2237/09 , C04B2237/365 , C04B2237/52 , C04B2237/78 , C23C16/24 , C23C16/4404 , C23C16/442 , F27B15/06 , F27D1/0006 , F27D1/045
Abstract: Segmented silicon carbide liners for use in a fluidized bed reactor for production of polysilicon-coated granulate material are disclosed, as well as methods of making and using the segmented silicon carbide liners. Non-contaminating bonding materials for joining silicon carbide segments also are disclosed. One or more of the silicon carbide segments may be constructed of reaction-bonded silicon carbide.
Abstract translation: 公开了用于生产多晶硅涂覆颗粒材料的流化床反应器中的分段碳化硅衬垫，以及制造和使用分段碳化硅衬垫的方法。 还公开了用于接合碳化硅段的非污染接合材料。 一个或多个碳化硅段可由反应结合的碳化硅构成。
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公开(公告)号：WO2020198703A1
公开(公告)日：2020-10-01
申请号：PCT/US2020/025527
申请日：2020-03-27
Applicant: REC SILICON INC
Inventor： BROWN, Kahl , MILLER, Matthew J. , CENTER, Benjamin , ZEININGER, Gerald A. , JULSRUD, Stein
Abstract: A method of controlling particle additions to a fluidized bed reactor includes measuring pressure fluctuations inside the fluidized bed reactor over a selected time period, determining a pressure parameter indicative of amplitudes of the pressure fluctuations, comparing the pressure parameter to a specified threshold, and controlling particle additions to the fluidized bed reactor when the pressure parameter deviates from the specified threshold.
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公开(公告)号：WO2018140260A8
公开(公告)日：2018-08-02
申请号：PCT/US2018/013891
申请日：2018-01-16
Applicant: REC SILICON INC
Inventor： MILLER, Matthew, J. , GEERTSEN, Robert, J. , JULSRUD, Stein , YILMAZ, Sefa , DESBORDES, Raymond
Abstract: This disclosure concerns embodiments of an annealing device and a method for annealing granular silicon to reduce a hydrogen content of the granular silicon. The annealing device comprises at least one tube through which granular silicon is flowed downwardly. The tube includes a heating zone and (i) a residence zone below the heating zone, (ii) a cooling zone below the heating zone, or (iii) a residence zone below the heating zone and a cooling zone below the residence zone. An inert gas is flowed upwardly through the tube. The tube may be constructed from two or more tube segments. The annealing device may include a plurality of tubes arranged in parallel and housed within a shell. The annealing device and method are suitable for a continuous process.
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10.发明申请
公开(公告)号：WO2018140259A1
公开(公告)日：2018-08-02
申请号：PCT/US2018/013890
申请日：2018-01-16
Applicant: REC SILICON INC.
Inventor： GEERTSEN, Robert, J. , MILLER, Matthew, J. , JOHNSTON, Justin , YILMAZ, Sefa , JULSRUD, Stein
CPC classification number: C01B33/037 , C01P2006/80
Abstract: This disclosure concerns embodiments of an annealing device and a method for annealing granular silicon to reduce a hydrogen content of the granular silicon. The annealing device comprises at least one tube through which granular silicon is flowed downwardly. The tube includes a heating zone and (i) a residence zone below the heating zone, (ii) a cooling zone below the heating zone, or (iii) a residence zone below the heating zone and a cooling zone below the residence zone. An inert gas is flowed upwardly through the tube. The tube may be constructed from two or more tube segments. The annealing device may include a plurality of tubes arranged in parallel and housed within a shell. The annealing device and method are suitable for a continuous process.
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