公开(公告)号：WO2018140257A1

公开(公告)日：2018-08-02

申请号：PCT/US2018/013884

申请日：2018-01-16

Applicant: REC SILICON INC

Inventor： MILLER, Matthew, J. ,  GEERTSEN, Robert, J. ,  JOHNSTON, Justin ,  JULSRUD, Stein ,  YILMAZ, Sefa

IPC: C01B33/02 ,  B01J19/24

CPC classification number: C01B33/037 ,  C01P2006/80

Abstract: This disclosure concerns embodiments of an annealing device and a method for annealing flowable, finely divided solids, such as annealing granular silicon to reduce a hydrogen content of the granular silicon. The annealing device comprises at least one tube through which flowable, finely divided solids are flowed downwardly. The tube includes a heating zone and (i) a residence zone below the heating zone, (ii) a cooling zone below the heating zone, or (iii) a residence zone below the heating zone and a cooling zone below the residence zone. An inert gas is flowed upwardly through the tube. The tube may be constructed from two or more tube segments. The annealing device may include a plurality of tubes arranged and housed within a shell. The annealing device and method are suitable for a continuous process.

公开(公告)号：WO2014074510A8

公开(公告)日：2015-05-14

申请号：PCT/US2013068487

申请日：2013-11-05

Applicant: REC SILICON INC

Inventor： MILLER MATTHEW J ,  SPANGLER MICHAEL V

IPC: B01J19/02 ,  C01B33/035 ,  C30B28/14

CPC classification number: B01J19/02 ,  B01J8/1809 ,  B01J2219/00245 ,  B01J2219/0236 ,  C01B33/027 ,  C23C16/24 ,  C23C16/4404 ,  C23C16/442

Abstract: A method and fluidized bed reactor for reducing or eliminating contamination of silicon-coated particles are disclosed. The metal surface of one or more fluidized bed reactor components is at least partially coated with a hard protective layer comprising a material having an ultimate tensile strength of at least 700 MPa at 650°C.

Abstract translation: 公开了一种用于减少或消除硅涂覆颗粒污染的方法和流化床反应器。 一个或多个流化床反应器组件的金属表面至少部分地涂覆有在650℃下包含极限拉伸强度至少为700MPa的材料的硬保护层。

公开(公告)号：WO2014172102A1

公开(公告)日：2014-10-23

申请号：PCT/US2014/032714

申请日：2014-04-02

Applicant: REC SILICON INC

Inventor： JULSRUD, Stein ,  SJASTAD, Anja, O.

IPC: C01B33/08 ,  C01B33/107

CPC classification number: C01B33/1071 ,  Y02E60/324

Abstract: Methods for reducing iron silicide and/or iron phosphide fouling and/or corrosion in a hydrochlorosilane production plant are disclosed. Sufficient hydrogen is added to a silicon tetrachloride process stream to inhibit iron (II) chloride formation and reduce iron silicide and/or iron phosphide fouling, superheater corrosion, or a combination thereof. Trichlorosilane also may be added to the silicon tetrachloride process stream.

Abstract translation: 公开了在氢氯硅烷生产设备中还原铁硅化物和/或磷化铁结垢和/或腐蚀的方法。 向四氯化硅工艺流中加入足够的氢以抑制氯化铁（II）的形成并减少铁硅化物和/或磷化铁结垢，过热器腐蚀或其组合。 也可以在四氯化硅工艺流中加入三氯硅烷。

公开(公告)号：WO2014099502A1

公开(公告)日：2014-06-26

申请号：PCT/US2013/074184

申请日：2013-12-10

Applicant: REC SILICON INC

Inventor： SPANGLER, Michael, V. ,  MILLER, Matthew, J.

IPC: C23C30/00 ,  C23C26/00 ,  B32B15/08

CPC classification number: C23C16/442 ,  C21D1/25 ,  C21D6/002 ,  C22C38/18 ,  C22C38/40

Abstract: Embodiments of a reaction chamber liner for use in a heated silicon deposition reactor are disclosed. The liner has an upper portion, a mid portion comprising a material other than a stainless steel alloy, and a lower portion comprising a martensitic stainless steel alloy. The liner's upper portion may have a composition substantially similar to the lower portion.

Abstract translation: 公开了用于加热的硅沉积反应器中的反应室衬套的实施例。 衬套具有上部，中间部分包括不锈钢合金以外的材料，以及包含马氏体不锈钢合金的下部。 衬垫的上部可以具有与下部基本相似的组成。

公开(公告)号：WO2014062884A1

公开(公告)日：2014-04-24

申请号：PCT/US2013/065372

申请日：2013-10-17

Applicant: REC SILICON INC

Inventor： LACY, Billy, Gene

IPC: B01J19/26 ,  B01J8/24

CPC classification number: B01J4/005 ,  B01J4/002 ,  B01J8/1827 ,  B01J2208/00902 ,  C01B33/027 ,  Y10T29/4973

Abstract: Embodiments of a nozzle assembly and a closable valve assembly for use in a fluid bed reactor system are disclosed. The nozzle assembly includes a first member that extends upwardly through a bottom wall of a fluid bed reaction chamber, and a second member. The first and second members are detachably fitted together via threads on each member. The second member can be removed and/or replaced, thereby facilitating fluid bed reactor maintenance. The closable valve assembly is connected to a nozzle, and includes a valve body and a gate pivotally connected to the valve body. The gate is movable between a first position at least partially covering the nozzle orifice in the absence of gas flow through the orifice, and a second position wherein the orifice is not covered when gas flows through the orifice.

Abstract translation: 公开了用于流化床反应器系统的喷嘴组件和可关闭阀组件的实施例。 喷嘴组件包括向上延伸穿过流化床反应室的底壁的第一构件和第二构件。 第一和第二构件通过每个构件上的螺纹可拆卸地装配在一起。 可以移除和/或更换第二构件，从而便于流化床反应器维护。 可关闭阀组件连接到喷嘴，并且包括阀体和枢转地连接到阀体的闸门。 在不存在通过孔口的气体流动的情况下，门可以在至少部分地覆盖喷嘴孔口的第一位置和第二位置之间移动，其中当气体流过孔口时，孔口不被覆盖。

公开(公告)号：WO2012170888A2

公开(公告)日：2012-12-13

申请号：PCT/US2012/041662

申请日：2012-06-08

Applicant: REC SILICON INC ,  OHS, Daniel

Inventor： OHS, Daniel

IPC: B01J8/24 ,  B01J2/06 ,  B01J19/24

CPC classification number: B01J2/006 ,  B01J2/16 ,  C01B33/03 ,  F28C3/14 ,  F28D7/0016 ,  F28D7/106 ,  F28D2021/0045

Abstract: Apparatus and methods are described for transporting and cooling silicon- coated granules produced in a fluidized bed reactor. The described system allows consistent silicon-coated granule production with fewer impurities than traditional silicon granule coolers. Granules flow from the reactor into a cooling vessel and subsequently are transported to a post production treatment system below the cooler. The cooling vessel is constructed as a single standpipe, vertical or near vertical, with a pipe diameter that allows granules to flow freely while providing adequate residence time for cooling. The standpipe is cooled by flowing a cooling medium through a passageway that extends along an external surface of the standpipe. The passageway can be provided by a pipe jacket or conduit.

Abstract translation: 描述了用于运输和冷却在流化床反应器中生产的硅涂层颗粒的装置和方法。 所描述的系统允许与传统的硅颗粒冷却器相比，具有更少的杂质的一致的硅涂层颗粒生产。 颗粒从反应器流入冷却容器，随后被运送到冷却器下面的后处理系统。 冷却容器构造为垂直或接近垂直的单个立管，管直径允许颗粒自由流动，同时提供足够的冷却停留时间。 通过使冷却介质流过沿着立管的外表面延伸的通道来冷却立管。 通道可以由管夹套或导管提供。

公开(公告)号：WO2012142514A2

公开(公告)日：2012-10-18

申请号：PCT/US2012033664

申请日：2012-04-13

Applicant: REC SILICON INC ,  WILLIAMS DAVID P ,  KANOFF NANCY

Inventor： WILLIAMS DAVID P ,  KANOFF NANCY

CPC classification number: C01B33/02 ,  C30B11/00 ,  C30B15/00 ,  C30B29/06 ,  C30B35/007

Abstract: A polysilicon system comprises polysilicon in at least three form-factors, or shapes, providing for an enhanced loading efficiency of a mold or crucible. The system is used in processes to manufacture multi-crystalline or single crystal silicon.

Abstract translation: 多晶硅系统包括至少三种形状因子或形状的多晶硅，以提供模具或坩埚的增强的加载效率。 该系统用于制造多晶或单晶硅的工艺中。

公开(公告)号：WO2012012457A3

公开(公告)日：2012-04-19

申请号：PCT/US2011044573

申请日：2011-07-19

Applicant: REC SILICON INC ,  JAYAKAR KRISHNAKUMAR M ,  KULTGEN URBAN R

Inventor： JAYAKAR KRISHNAKUMAR M ,  KULTGEN URBAN R

IPC: H01L21/205 ,  C23C16/24 ,  C30B25/00 ,  C30B29/06

CPC classification number: C01B33/035 ,  C01P2004/61 ,  C23C16/24 ,  C23C16/4418 ,  C23C16/46 ,  H01L21/02532 ,  H01L21/0262

Abstract: A chemical vapor deposition (CVD) reactor system has a reaction chamber enclosed by a reaction chamber wall with an inner surface disposed towards the interior of the chamber. At least a portion of the wall is a heat control layer that faces the chamber and that consists of a material, such as electrolytic ally deposited nickel, that has an emissivity coefficient, as measured at 300K, of 0.1 or less and a hardness of at least 3.5 Moh. Polycrystalline silicon is produced from silicon-rich gases using such a CVD reactor system.

Abstract translation: 化学气相沉积（CVD）反应器系统具有由反应室壁包围的反应室，反应室壁的内表面朝向室的内部设置。 壁的至少一部分是面对腔室的热控制层，其由诸如电解烯烃沉积镍的材料组成，其具有在300K下测量的发射系数为0.1或更小，硬度为at 至少3.5 Moh。 使用这种CVD反应器系统由富硅气体制造多晶硅。

公开(公告)号：WO2006110481A3

公开(公告)日：2007-04-05

申请号：PCT/US2006012882

申请日：2006-04-06

Applicant: REC SILICON INC ,  HUGO FRANZ ,  WINTERTON LYLE C

Inventor： HUGO FRANZ ,  WINTERTON LYLE C

IPC: C01B33/035

CPC classification number: C01B33/035

Abstract: Polysilicon is deposited onto a tube or other hollow body. The hollow body replaces the slim rod of a conventional Siemens-type reactor and may be heated internally with simple resistance elements. The hollow body diameter is selected to provide a surface area much larger than that of a silicon slim rod. The hollow body material may be chosen such that, upon cooling, deposited polysilicon readily separates from the hollow body due to differences in contraction and falls into a collection container.

Abstract translation: 多晶硅沉积在管或其他中空体上。 中空体代替了常规西门子型电抗器的细长杆，并且可以在内部用简单的电阻元件进行加热。 选择中空体直径以提供比硅苗条的表面积大得多的表面积。 可以选择中空体材料，使得在冷却时，由于收缩差异，沉积的多晶硅容易与中空体分离并落入收集容器中。

公开(公告)号：WO2018140260A1

公开(公告)日：2018-08-02

申请号：PCT/US2018/013891

申请日：2018-01-16

Applicant: REC SILICON INC.

Inventor： MILLER, Matthew, J. ,  GEERTSEN, Robert, J. ,  JULSRUD, Stein ,  YILMAZ, Sefa ,  DESBORDES, Raymond

IPC: B01J6/00 ,  B01J19/00 ,  C01B33/02

CPC classification number: C01B33/037 ,  F16L9/22 ,  F27D3/0033 ,  F27D3/10 ,  F27D3/16 ,  F27D2003/166 ,  F27D2019/0068 ,  H05B3/148

Abstract: This disclosure concerns embodiments of an annealing device and a method for annealing granular silicon to reduce a hydrogen content of the granular silicon. The annealing device comprises at least one tube through which granular silicon is flowed downwardly. The tube includes a heating zone and (i) a residence zone below the heating zone, (ii) a cooling zone below the heating zone, or (iii) a residence zone below the heating zone and a cooling zone below the residence zone. An inert gas is flowed upwardly through the tube. The tube may be constructed from two or more tube segments. The annealing device may include a plurality of tubes arranged in parallel and housed within a shell. The annealing device and method are suitable for a continuous process.