TITANATE AND METAL INTERCONNECTS FOR SOLID OXIDE FUEL CELLS
    2.
    发明申请
    TITANATE AND METAL INTERCONNECTS FOR SOLID OXIDE FUEL CELLS 审中-公开
    固体氧化物燃料电池的钛酸盐和金属互连

    公开(公告)号:WO2008085488A8

    公开(公告)日:2008-10-09

    申请号:PCT/US2007026356

    申请日:2007-12-27

    Abstract: A solid oxide fuel cell (SOFC) includes a plurality of sub-cells. Each sub- cell includes a first electrode in fluid communication with a source of oxygen gas, a second electrode in fluid communication with a source of a fuel gas, and a solid electrolyte between the first electrode and the second electrode. The SOFC further includes an interconnect between the sub-cells. In one embodiment, the SOFC has a first surface in contact with the first electrode of each sub-cell and a second surface that is in contact with the second electrode of each sub-cell; and the interconnect consists essentially of a doped M-titanate based perovskite, wherein M is an alkaline earth metal. In another embodiment, the interconnect includes a fist layer in contact with the first electrode of each sub-cell, and a second layer in contact with the second electrode of each sub-cell. The first layer includes an electrically conductive material selected from the group consisting of an metal, a metal alloy and1 a mixture thereof. The second layer includes a doped M-titanate based perovskite, wherein M is an alkaline earth metal. A solid oxide fuel cell described above is formed by connecting each of the sub-cells with an interconnect described above.

    Abstract translation: 固体氧化物燃料电池(SOFC)包括多个子电池。 每个子单元包括与氧气源流体连通的第一电极,与燃料气体源流体连通的第二电极和在第一电极和第二电极之间的固体电解质。 SOFC还包括子单元之间的互连。 在一个实施例中,SOFC具有与每个子单元的第一电极接触的第一表面和与每个子单元的第二电极接触的第二表面; 并且所述互连基本上由掺杂的M - 钛酸盐基钙钛矿组成,其中M是碱土金属。 在另一个实施例中,互连包括与每个子单元的第一电极接触的第一层和与每个子单元的第二电极接触的第二层。 第一层包括选自金属,金属合金和其混合物的导电材料。 第二层包括掺杂的M钛酸钙基钙钛矿,其中M是碱土金属。 上述固体氧化物型燃料电池通过使用上述的互连来连接各子单元来形成。

    THERMAL SHOCK-TOLERANT SOLID OXIDE FUEL CELL STACK
    3.
    发明申请
    THERMAL SHOCK-TOLERANT SOLID OXIDE FUEL CELL STACK 审中-公开
    耐热的固体氧化物燃料电池堆

    公开(公告)号:WO2010078359A3

    公开(公告)日:2010-09-23

    申请号:PCT/US2009069728

    申请日:2009-12-29

    Abstract: A solid oxide fuel cell (SOFC) includes a plurality of subassemblies. Each subassembly includes at least one subcell of a first electrode, a second electrode and an electrolyte between the first and second electrodes. A first bonding layer is at the second electrode and an interconnect layer is at the first bonding layer distal to the electrolyte. A second bonding layer that is compositionally distinct from the first bonding layer is at the interconnect layer, whereby the interconnect partitions the first and second bonding layers. A method of fabricating a fuel cell assembly includes co-firing at least two subassemblies using a third bonding layer that is microstructurally or compositionally distinct from the second bonding layer.

    Abstract translation: 固体氧化物燃料电池(SOFC)包括多个子组件。 每个子组件包括第一电极,第二电极和第一和第二电极之间的电解质的至少一个子电池。 第一接合层位于第二电极处,并且互连层位于远离电解质的第一接合层处。 与第一接合层成分不同的第二接合层位于互连层,由此互连部分分隔第一和第二接合层。 一种制造燃料电池组件的方法包括使用在微结构或组成上不同于第二接合层的第三接合层共烧发至少两个子组件。

    CERAMIC COMPONENTS, COATED STRUCTURES AND METHODS FOR MAKING SAME
    4.
    发明申请
    CERAMIC COMPONENTS, COATED STRUCTURES AND METHODS FOR MAKING SAME 审中-公开
    陶瓷组件,涂层结构及其制造方法

    公开(公告)号:WO2007046841A3

    公开(公告)日:2007-12-21

    申请号:PCT/US2006006569

    申请日:2006-02-23

    CPC classification number: B81C99/0085 B81C2201/0167 C23C16/01 C23C16/325

    Abstract: Methods of forming ceramic components are disclosed. One method calls for chemical vapor depositing a ceramic material over a substrate having first and second opposite surfaces to define a coated structure, the ceramic material forming a layer overlying both the first and second opposite surfaces. The layer and the substrate have a difference in thermal expansion coefficients of at least 0.5 ppm/K. The substrate is removed, leaving behind the layer. Ceramic components and coated structures are also disclosed.

    Abstract translation: 公开了形成陶瓷部件的方法。 一种方法要求在具有第一和第二相对表面的衬底上化学气相沉积陶瓷材料以限定涂覆结构,陶瓷材料形成覆盖第一和第二相对表面的层。 该层和衬底在热膨胀系数方面具有至少0.5ppm / K的差异。 衬底被移除,留下层。 还公开了陶瓷部件和涂层结构。

    METHOD FOR TREATING SEMICONDUCTOR PROCESSING COMPONENTS AND COMPONENTS FORMED THEREBY
    8.
    发明申请
    METHOD FOR TREATING SEMICONDUCTOR PROCESSING COMPONENTS AND COMPONENTS FORMED THEREBY 审中-公开
    用于处理形成半导体加工组件和组分的方法

    公开(公告)号:WO2009085703A3

    公开(公告)日:2009-10-22

    申请号:PCT/US2008086862

    申请日:2008-12-15

    CPC classification number: C30B35/00 H01L21/67316

    Abstract: A semiconductor processing component has an outer surface portion comprised of silicon carbide, the outer surface portion having a skin impurity level and a bulk impurity level. The skin impurity level is average impurity level from 0 nm to 100 nm of depth into the outer surface portion, the bulk impurity level is measured at a depth of at least 3 microns into the outer surface portion, and the skin impurity level is not greater than 80% of the bulk impurity level

    Abstract translation: 半导体处理部件具有由碳化硅组成的外表面部分,外表面部分具有皮肤杂质水平和体杂质水平。 皮肤杂质水平是从外表面部分的深度的0nm至100nm的平均杂质水平,在至少3微米的深度测量体外杂质水平进入外表面部分,并且皮肤杂质水平不大 超过80%的杂质浓度

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