MAGNETIC STORAGE ELEMENT
    2.
    发明申请
    MAGNETIC STORAGE ELEMENT 审中-公开
    磁存储元件

    公开(公告)号:WO2017183354A1

    公开(公告)日:2017-10-26

    申请号:PCT/JP2017/009571

    申请日:2017-03-09

    Abstract: A magnetic storage element includes a first magnetic layer having a magnetization easy axis in a direction perpendicular to a surface of the first magnetic layer. A first non-magnetic layer is on the first magnetic layer. A second magnetic layer is on the first non-magnetic layer and has a fixed magnetization direction. A second non-magnetic layer is on the second magnetic layer. A third magnetic layer is on the second non-magnetic layer and has a fixed magnetization direction perpendicular to a surface of the third magnetic layer. A third non-magnetic layer is on the third magnetic layer. A storage layer on the third non-magnetic layer and having a variable magnetization direction with a magnetization easy axis in a direction perpendicular to a surface of the storage layer. Change in a magnetization direction of the first magnetic layer is easier than in the storage layer.

    Abstract translation: 磁存储元件包括在垂直于第一磁性层的表面的方向上具有易磁化轴的第一磁性层。 第一非磁性层位于第一磁性层上。 第二磁性层位于第一非磁性层上并具有固定的磁化方向。 第二非磁性层位于第二磁性层上。 第三磁性层位于第二非磁性层上并具有垂直于第三磁性层表面的固定磁化方向。 第三非磁性层位于第三磁性层上。 在第三非磁性层上的存储层,其具有可变磁化方向,易磁化轴在垂直于存储层表面的方向上。 第一磁层的磁化方向的改变比存储层中的更容易。

    STT MRAM AND MAGNETIC HEAD
    3.
    发明申请
    STT MRAM AND MAGNETIC HEAD 审中-公开
    STT MRAM和磁头

    公开(公告)号:WO2015064049A1

    公开(公告)日:2015-05-07

    申请号:PCT/JP2014/005318

    申请日:2014-10-20

    Abstract: A storage element having a layered structure and being configured for storing information is disclosed. In one example, the storage element comprises a storage portion with a storage magnetization that is perpendicular to a film surface of the layered structure, wherein a direction of the storage magnetization is configured to change according to the information. The storage element also includes a fixed magnetization portion with reference magnetization serving as a reference to the storage magnetization, and an intermediate portion between the storage portion and the fixed magnetization portion that is made of a non-magnetic material. The fixed magnetization portion includes a laminated ferrimagnetic structure that comprises a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer. The fixed magnetization portion includes a first magnetic material that is an alloy or a laminated structure including Pt, Co, and Y. Storage devices including the storage element are also disclosed.

    Abstract translation: 公开了一种具有分层结构并被配置用于存储信息的存储元件。 在一个示例中,存储元件包括具有垂直于分层结构的膜表面的存储磁化的存储部分,其中存储磁化的方向被配置为根据该信息而改变。 存储元件还包括具有参考磁化的固定磁化部分作为对存储磁化的参考,以及由非磁性材料制成的存储部分和固定磁化部分之间的中间部分。 固定磁化部分包括层叠的铁磁结构,其包括第一铁磁层,第二铁磁层和非磁性层。 固定磁化部分包括作为合金的第一磁性材料或包括Pt,Co和Y的层压结构。还公开了包括存储元件的存储装置。

Patent Agency Ranking