公开(公告)号：WO2013096273A1

公开(公告)日：2013-06-27

申请号：PCT/US2012/070278

申请日：2012-12-18

Applicant: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.

Inventor： REN, Fan ,  PEARTON, Stephen, John ,  KIM, Jihyun ,  KIM, Hong-Yeol

IPC: H01L23/48 ,  H01L21/60

CPC classification number: H01L23/53276 ,  H01L21/28562 ,  H01L21/7685 ,  H01L23/485 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/03003 ,  H01L2224/03334 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/051 ,  H01L2224/05124 ,  H01L2224/05138 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05181 ,  H01L2224/05193 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/351 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01327 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01022 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/00

Abstract: Contacts for semiconductor devices are formed where a barrier layer comprising graphene is situated between a first layer comprising a conductor, and a second layer comprising a second conductor or a semiconductor. For example, a metal layer can be formed on a graphene layer residing on a semiconductor. The barrier layer can be directly formed on some second layers, for example, graphene can be transferred from an organic polymer/graphene bilayer structure and the organic polymer removed and replaced with a metal or other conductor that comprises the first layer of the contact. The bilayer can be formed by CVD deposition on a metallic second layer, or the graphene can be formed on a template layer, for example, a metal layer, and bound by a binding layer comprising an organic polymer to form an organic polymer /graphene/metal trilayer structure. The template layer can be removed to yield the bilayer structure. Contacts with the graphene barrier layer display enhanced reliability as the graphene layer inhibits diffusion and reaction between the layers contacting the barrier layer.

Abstract translation: 形成用于半导体器件的触点，其中包括石墨烯的阻挡层位于包括导体的第一层之间，以及包括第二导体或半导体的第二层。 例如，可以在驻留在半导体上的石墨烯层上形成金属层。 阻挡层可以直接形成在一些第二层上，例如，石墨烯可以从有机聚合物/石墨烯双层结构转移，并且有机聚合物被去除并用包含第一层接触的金属或其它导体代替。 可以通过CVD沉积在金属第二层上形成双层，或者可以在模板层（例如金属层）上形成石墨烯，并且通过包含有机聚合物的结合层结合以形成有机聚合物/石墨烯/ 金属三层结构。 可以除去模板层以产生双层结构。 与石墨烯阻挡层的接触显示增强的可靠性，因为石墨烯层抑制了与阻挡层接触的层之间的扩散和反应。