公开(公告)号：WO2014160162A1

公开(公告)日：2014-10-02

申请号：PCT/US2014/025946

申请日：2014-03-13

Applicant: UNITED STATES OF AMERICA, AS REPRESENTED BY THE ADMINISTRATOR OF THE NATIONAL AERONAUTICS AND SPACE ADMINISTRATION

Inventor： PARK, Yeonjoon ,  CHOI, Sang, Hyouk

IPC: H01L21/20

CPC classification number: H01L21/0242 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/2011 ,  H01L21/2053 ,  H01L21/2056 ,  H01L25/167 ,  H01L27/15 ,  H01L29/267 ,  H01L31/028 ,  H01L31/0336 ,  H01L31/03682 ,  H01L31/125 ,  H01L31/1804 ,  H01L31/1812 ,  H01L31/1848 ,  H01L31/1852 ,  H01L33/007 ,  H01L2924/0002 ,  Y02E10/544 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521 ,  H01L2924/00

Abstract: One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated Ill-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.

Abstract translation: 本发明的一个方面是一种双面混合晶体结构，其包括具有（0001）C面并具有正面和背面的三角形蓝宝石晶片。 蓝宝石晶片对可见光和红外光谱的光线基本上是透明的，并且还提供了关于电磁射频噪声的绝缘。 在（0001）C面上具有与立方晶体方向对准的立方菱形结构的晶体Si材料层，并被应变为菱面体，从而使所选择的（SiGe）器件能够连续地集成到蓝宝石的后侧 晶圆。 双面混合晶体结构还包括在蓝宝石晶片的正面上的集成的III族氮化物晶体层，其能够在蓝宝石晶片的正面上连续地集成选定的III-氮化物器件。

公开(公告)号：WO2016032779A1

公开(公告)日：2016-03-03

申请号：PCT/US2015/045360

申请日：2015-08-14

Applicant: HRL LABORATORIES, LLC

Inventor： CHU, Rongming

IPC: H01L29/778 ,  H01L21/336

CPC classification number: H01L21/0254 ,  H01L21/02458 ,  H01L21/2056 ,  H01L21/306 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/66522 ,  H01L29/66666 ,  H01L29/66734 ,  H01L29/7788 ,  H01L29/7813 ,  H01L29/7827

Abstract: A vertical trench MOSFET comprising: a N-doped substrate of a III-N material; and an epitaxial layer of the III-N material grown on a top surface of the substrate, a N- doped drift region being formed in said epitaxial layer; a P-doped base layer of said III- N material, formed on top of at least a portion of the drift region; a N-doped source region of said III-N material; formed on at least a portion of the base layer; and a gate trench having at least one vertical wall extending along at least a portion of the source region and at least a portion of the base layer; wherein at least a portion of the P-doped base layer along the gate trench is a layer of said P-doped III-N material that additionally comprises a percentage of aluminum.

Abstract translation: 一种垂直沟槽MOSFET，包括：III-N材料的N掺杂衬底; 以及在所述衬底的顶表面上生长的所述III-N材料的外延层，在所述外延层中形成N掺杂漂移区; 所述III-N材料的P掺杂的基底层形成在所述漂移区域的至少一部分的顶部; 所述III-N材料的N掺杂源区; 形成在所述基底层的至少一部分上; 以及栅极沟槽，其具有至少一个垂直壁，所述至少一个垂直壁沿所述源极区域的至少一部分和所述基底层的至少一部分延伸; 其中沿栅极沟槽的P掺杂的基底层的至少一部分是所述P掺杂的III-N材料的层，其另外包括一定百分比的铝。

公开(公告)号：WO2012064748A1

公开(公告)日：2012-05-18

申请号：PCT/US2011/059793

申请日：2011-11-08

Applicant: GEORGIA TECH RESEARCH CORPORATION ,  MOSELEY, Michael William ,  DOOLITTLE, William Alan

Inventor： MOSELEY, Michael William ,  DOOLITTLE, William Alan

IPC: H01L29/12

CPC classification number: C01B21/0632 ,  C01P2006/40 ,  C01P2006/90 ,  C30B23/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/2056 ,  H01L29/2003 ,  H01L29/30

Abstract: Systems and methods for MBE growing of group-Ill Nitride alloys, comprising establishing an average reaction temperature range from about 250C to about 850C; introducing a nitrogen flux at a nitrogen flow rate; introducing a first metal flux at a first metal flow rate; and periodically stopping and restarting the first metal flux according to a first flow duty cycle. According to another embodiment, the syste comprises a nitrogen source that provides nitrogen at a nitrogen flow rate, and, a first metal source comprising a first metal effusion cell that provides a first metal at a first metal flow rate, and a first metal shutter that periodically opens and closes according to a first flow duty cycle to abate and recommence the flow of the first metal from the first metal source. Produced alloys include AIN, InN, GaN, InGaN, and AllnGaN.

Abstract translation: 包括组合III族氮化物合金的MBE生长的系统和方法，包括建立约25℃至约85℃的平均反应温度范围; 在氮气流速下引入氮气通量; 以第一金属流速引入第一金属焊剂; 并且根据第一流量占空比周期性地停止和重新启动第一金属焊剂。 根据另一个实施方案，系统包括以氮气流速提供氮气的氮源，以及第一金属源，其包括以第一金属流速提供第一金属的第一金属渗出池和第一金属快门， 根据第一流动占空比周期性地打开和关闭以消除并重新开始来自第一金属源的第一金属的流动。 生产的合金包括AIN，InN，GaN，InGaN和AllnGaN。