利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

532 条记录 (耗时 0.035 秒)

    SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SEMICONDUCTOR DEVICE 审中-公开
    半导体装置和包括半导体装置的显示装置

    公开(公告)号：WO2017115214A1

    公开(公告)日：2017-07-06

    申请号：PCT/IB2016/057801

    申请日：2016-12-20

    申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    发明人： MIYAKE, Hiroyuki ,  OKAZAKI, Kenichi ,  HOSAKA, Yasuharu ,  SHIMA, Yukinori

    IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L51/50

    CPC分类号： H01L27/1225 ,  H01L27/127 ,  H01L27/3262 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7782 ,  H01L29/7786 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696 ,  H01L51/005

    摘要： Provided is a novel semiconductor device. The semiconductor device comprises a first transistor and a second transistor. The first transistor comprises a first gate electrode; a first insulating film over the first gate electrode; a first oxide semiconductor film over the first insulating film; a first source electrode and a first drain electrode over the first oxide semiconductor film; a second insulating film over the first oxide semiconductor film, the first source electrode, and the first drain electrode; and a second gate electrode over the second insulating film. The second transistor comprises a first drain electrode; the second insulating film over the second drain electrode; a second oxide semiconductor film over the second insulating film; a second source electrode and a second drain electrode over the second oxide semiconductor film; a third insulating film over the second oxide semiconductor film, the second source electrode, and the second drain electrode; and a third gate electrode over the third insulating film. The first oxide semiconductor film partly overlaps with the second oxide semiconductor film.

    摘要翻译： 提供了一种新颖的半导体器件。 该半导体器件包括第一晶体管和第二晶体管。 第一晶体管包括第一栅电极; 在第一栅电极上的第一绝缘膜; 在第一绝缘膜上的第一氧化物半导体膜; 在所述第一氧化物半导体膜上的第一源电极和第一漏电极; 在第一氧化物半导体膜，第一源电极和第一漏电极之上的第二绝缘膜; 以及在第二绝缘膜上的第二栅电极。 第二晶体管包括第一漏电极; 在第二漏电极上的第二绝缘膜; 在第二绝缘膜上的第二氧化物半导体膜; 所述第二氧化物半导体膜上的第二源电极和第二漏电极; 在所述第二氧化物半导体膜，所述第二源电极和所述第二漏电极之上的第三绝缘膜; 以及在第三绝缘膜上的第三栅电极。 第一氧化物半导体膜部分地与第二氧化物半导体膜重叠。

    PHOSPHEPINE MATRIX COMPOUND FOR A SEMICONDUCTING MATERIAL
    4.
    发明申请
    PHOSPHEPINE MATRIX COMPOUND FOR A SEMICONDUCTING MATERIAL 审中-公开
    用于半导体材料的磷光体矩阵化合物

    公开(公告)号：WO2016207224A1

    公开(公告)日：2016-12-29

    申请号：PCT/EP2016/064430

    申请日：2016-06-22

    申请人： NOVALED GMBH

    发明人： CARDINALI, Francois ,  SCHULZE, Benjamin ,  GRÄF, Katja ,  SCHOLZ, Johannes

    IPC分类号： C07F9/6568 ,  H01L51/50

    CPC分类号： C07F9/65686 ,  H01L51/005 ,  H01L51/5076 ,  H01L51/5092 ,  H01L51/5278

    摘要： The present invention is directed to a compound comprising at least one phosphepine ring and having the phosphorous atom of the phosphepine ring substituted with at least one monovalent substituent R, wherein (i) R is selected from aryls and heteroaryls comprising at least two rings or (ii) R is selected from aryls, alkyls, heteroalkyls, heteroaryls, H, F, CI, Br, I, OH, and OR*, wherein R* is selected from C1-C22 alkyl and C7-C22 arylalkyl, and the hosphepine ring is a ring according to formula (I), wherein structural moieties A, B, C are independently selected from ortho-arylenes and ortho-heteroarylenes, with the proviso that neither A nor B is a condensed arylene, and C comprises at least two annelated rings, a semiconducting material comprising this compound as well as an electronic device comprising the semiconducting material.

    摘要翻译： 本发明涉及包含至少一个磷脂酸环并且具有被至少一个一价取代基R取代的磷脂酸环的磷原子的化合物，其中（i）R选自包含至少两个环的芳基和杂芳基或（ ii）R选自芳基，烷基，杂烷基，杂芳基，H，F，Cl，Br，I，OH和OR *，其中R *选自C 1 -C 22烷基和C 7 -C 22芳烷基， 是根据式（I）的环，其中结构部分A，B，C独立地选自邻 - 亚芳基和邻 - 亚芳基，条件是A和B都不是稠合亚芳基，C包含至少两个被延伸的 环，包含该化合物的半导体材料以及包含半导体材料的电子器件。

    FLUORINATED AROMATIC SMALL MOLECULES AS FUNCTIONAL ADDITIVES FOR DISPERSION OF CONDUCTIVE POLYMERS
    6.
    发明申请
    FLUORINATED AROMATIC SMALL MOLECULES AS FUNCTIONAL ADDITIVES FOR DISPERSION OF CONDUCTIVE POLYMERS 审中-公开
    氟化芳香小分子作为分散导电聚合物的功能添加剂

    公开(公告)号：WO2016079144A1

    公开(公告)日：2016-05-26

    申请号：PCT/EP2015/076868

    申请日：2015-11-17

    申请人： HERAEUS DEUTSCHLAND GMBH & CO. KG

    发明人： LÖVENICH, Wilfried ,  KAUSCH-BUSIES, Nina ,  PONOMARENKO, Sergei Anatolievich ,  ELSCHNER, Andreas ,  KONONEVICH, Yuriy N. ,  TERESHCHENKO, Alexey S.

    IPC分类号： H01L51/54 ,  C07C13/00 ,  H01L51/50

    CPC分类号： H01L51/0073 ,  C07C43/29 ,  C07C309/43 ,  C07D321/10 ,  H01L51/0037 ,  H01L51/005 ,  H01L51/0052 ,  H01L51/42 ,  H01L51/5088 ,  Y02E10/549

    摘要： The present invention relates to a compound having a general formula selected from the group consisting of formula la and lb, wherein K represents an aromatic or heteroaromatic group in which at least one hydrogen atom may be substituted by a functional groups selected from the group consisting of a sulfonic acid group, a sulfuric acid group, an ammonium group and an aliphatic group; X is selected from the group consisting of a C-C-bond, O, S, SO 2 and NR', wherein R' represents a hydrogen or an aliphatic or aromatic group; A represents a fluorinated or perfluorinated aromatic group; n represents an integer in the range from 2 to 6; m represents an integer in the range from 1 to 3. The present invention also relates to a composition comprising this compound, to a process for the preparation of a conductive layer using this composition, to a conductive layer comprising the compound according to the present invention, to electronic components comprising this conductive layer and to the use of the compound according to the present invention as an additive in a hole-injection layer of an OLED or in an organic solar cell.

    摘要翻译： 本发明涉及具有选自式Ia和Ib的通式的化合物，其中K表示芳族或杂芳族基团，其中至少一个氢原子可以被选自以下的官能团取代： 磺酸基，硫酸基，铵基和脂族基; X选自C-C键，O，S，SO 2和NR'，其中R'表示氢或脂族或芳族基团; A表示氟化或全氟化芳族基团; n表示2〜6的整数， m表示1〜3的整数。本发明还涉及包含该化合物的组合物，使用该组合物制备导电层的方法，涉及包含本发明化合物的导电层 涉及包含该导电层的电子部件以及根据本发明的化合物作为OLED的空穴注入层或有机太阳能电池中的添加剂的用途。