摘要:
A level-shifter is provided in which the devices may all be sized approximately the same yet a known startup state is provided at power-up by forming the level-shifter using a one-sided NMOS latch. The one-sided NMOS latch is powered through a pair of head-switch transistors. A pair of pull-down transistors function to flip a binary state for the one-sided NMOS latch.
摘要:
Exemplary embodiments of the present disclosure are directed to a bootstrapping module and logic circuits utilizing the bootstrapping module to compensate for a weak high condition. The bootstrapping module can be implemented using transistors have a single channel type that is the same as the channel type of transistors utilized in the logic circuits such that a truly unipolar circuit can be realized while addressing the weak high problem of such unipolar circuits.
摘要:
A driver circuit (10) for controlling a semiconductor power switch (Q7) comprises a first power driver transistor (QS) and a second power driver transistor (Q5) complementary to the first power driver transistor (08). Both power driver transistors (Q5, Q6) have an output terminal connected to an input terminal (34) of the semiconductor power switch (Q7). An input terminal of the second power driver transistor (Q5) is connected to a half bridge circuit comprising a; first pre-driver transistor (Q3) and a second pre-driver transistor (04) complementary to the first pre-driver transistor
摘要:
A driver circuit (10) for controlling a semiconductor power switch (Q7) comprises a first power driver transistor (QS) and a second power driver transistor (Q5) complementary to the first power driver transistor (08). Both power driver transistors (Q5, Q6) have an output terminal connected to an input terminal {34} of the semiconductor power switch (Q7). An input terminal of the second power driver transistor (Q5) is connected to a half bridge circuit comprising a; first pre-driver transistor (Q3) and a second pre-driver transistor (04) complementary to the first pre-driver transistor
摘要:
A voltage level shifter (10) for translating a binary input signal (IN_L) representing a binary sequence to a binary output signal (OUT_H) representing the same binary sequence. The voltage level shifter comprises an input port (12) for receiving the binary input signal as an input voltage varying between a first input voltage level (VSS) and a second input voltage level (VDD). An output port (14) is connected to a node (16) for outputting the binary output signal as an output voltage varying between a first output voltage level (VBB) and a second output voltage level (VPP). A supply voltage node (18) connectable to a voltage supply, can provide the second output voltage level (VPP). A first switch (22) is arranged to couple the supply voltage node (18) to the node (16) and to decouple the supply voltage node (18) from the node (16) based on a voltage at the node (16). A feedback voltage loop (40) is connected to the node (16) for providing a feedback voltage (VFB) based on the voltage at the node (16). A second switch (42) is connected to the feedback voltage loop and arranged to couple the input port (12) to the node (16) based on a voltage at the input port and the feedback voltage (VFB). A decoupler and a voltage shifting method are also disclosed.
摘要:
An electronic device with a supply voltage level converter converts a signal from a first low supply voltage level to a second high supply voltage level includes; a first pair of cross coupled MOS transistors compliant with the second supply voltage level, each having a source coupled to the second supply voltage level and providing complementary output signals at respective drains; driven by a second pair of common gate MOS transistors compliant with the second supply voltage; driven by a third pair of common gate MOS transistors compliant with the first voltage level; and driven by first and second inverters coupled in a chain and supplied by the first supply voltage level, each having an output connected to the source of a transistor in a third pair.
摘要:
Decision feedback equalization (DFE) circuits are disclosed for use with fractional-rate clocks of lesser frequency than the data signal. For example, a one- half-rate clocked DFE circuit utilizes two input data paths, which are respectively activated on rising and falling edges of an associated half-rate clock. Each of the input data paths has a pair of comparators with differing reference voltage levels. The comparators in each input data path output to a multiplexer, which picks between the two comparator outputs depending on the logic level of the previously received bit. The output of each input data path is sent as a control input to the multiplexer of the other data path. Thus, the results from previously- detected bits affect which comparator's output is passed to the output of the circuit, even though the synchronizing clock is half the frequency of the data. A quarter-rate DFE circuit is also disclosed which operates similarly.
摘要:
A level shift circuit for transferring an input signal (60, 90) referenced to a first reference voltage (V sshs , V ssls ) to an output signal (65, 66, 95, 96) referenced to a second reference voltage (V ssls , V sshs ). The circuit comprises a first pull-up transistor (42), a first shielding transistor (43), and a first pull-down transistor (44) connected in series between the first reference voltage and the second reference voltage, and a second pull-up transistor (45), a second shielding transistor (46), and a second pull-down transistor (47) connected in series between the first reference voltage and the second reference voltage. The first pull-up transistor is controlled by the input signal, and the second pull-up transistor controlled by an inverted signal derived from the input signal. The gate terminals of the first and second shielding transistors are connected through gate series resistors (50, 51) to a third voltage (V ddls ) having a fixed difference from the second reference voltage. The output signal is taken from a first node (62) between the first shielding transistor and the first pull-down transistor or a second node (64) between the second shielding transistor and the second pull-down transistor.
摘要翻译:一种电平移位电路,用于将参考第一基准电压(V S S S S S S S S S S S S S S S H S)的输入信号(60,90)传送到输出信号(65,66, 参考第二参考电压(V SUB,S S S S S S S S S S S S S S S S S s)。 该电路包括串联连接在第一参考电压和第二参考电压之间的第一上拉晶体管(42),第一屏蔽晶体管(43)和第一下拉晶体管(44) 上拉晶体管(45),第二屏蔽晶体管(46)和串联连接在第一参考电压和第二参考电压之间的第二下拉晶体管(47)。 第一上拉晶体管由输入信号控制,第二上拉晶体管由从输入信号导出的反相信号控制。 第一和第二屏蔽晶体管的栅极端子通过栅极串联电阻器(50,51)连接到与第二参考电压具有固定差值的第三电压(V SUB)。 输出信号取自第一屏蔽晶体管和第一下拉晶体管之间的第一节点(62)或第二屏蔽晶体管和第二下拉晶体管之间的第二节点(64)。
摘要:
An electronic circuit is provided comprising an input (V IN ) for coupling a circuit of a first voltage domain to the electronic circuit, and a first, second, third and fourth transistor coupled between a supply voltage (VDD) and a voltage (VSS). The third transistor (M1) is coupled between the voltage (VSS) and a first node (tn). The second transistor (M2) is coupled between a second node (tp) and the output (V OUT ). The third transistor (M3) is coupled between the first node (tn) and the output (V OUT ). The fourth transistor (M4) is coupled between the supply voltage (VDD) and the second node (tp). A first reference voltage generating unit (RC) receives the voltage at the first node (tn) and the voltage (VSS) as input, and its output is coupled to the gate of the second transistor (M2). A second reference voltage generating unit (RD) receives the supply voltage (VDD) and the voltage of the second node (tp) as input, and its output is coupled to the gate of the third transistor (M3). The first and second reference voltage generating units (RD, RC) generate a reference voltage according to at least one of the logic states of the first, second, third or fourth transistor (M1-M4) .
摘要翻译:提供一种电子电路,其包括用于将第一电压域的电路耦合到电子电路的输入端(V IN IN IN)以及耦合在电源电压(VDD)之间的第一,第二,第三和第四晶体管 )和电压(VSS)。 第三晶体管(M1)耦合在电压(VSS)和第一节点(tn)之间。 第二晶体管(M2)耦合在第二节点(tp)和输出端(V OUT OUT)之间。 第三晶体管(M3)耦合在第一节点(tn)和输出端(V OUT OUT)之间。 第四晶体管(M4)耦合在电源电压(VDD)和第二节点(tp)之间。 第一参考电压产生单元(RC)接收第一节点(tn)处的电压和作为输入的电压(VSS),并且其输出耦合到第二晶体管(M2)的栅极。 第二参考电压产生单元(RD)接收电源电压(VDD)和第二节点(tp)的电压作为输入,并且其输出耦合到第三晶体管(M3)的栅极。 第一和第二参考电压产生单元(RD,RC)根据第一,第二,第三或第四晶体管(M1-M4)的逻辑状态中的至少一个产生参考电压。
摘要:
The invention relates to circuit arrangements for bridging high voltages using a switching signal as a dynamic voltage level shifter. Said arrangements are characterised in particular in that switching signal sequences can be processed or provided at different voltage levels. A fundamental advantage of this is that any technology for integrated high-voltage circuits involving any isolation method can be used to produce the inventive circuit arrangements for switching over high voltages. The circuit arrangements for switching over high voltages, also known as dynamic voltage level shifters, make available signal levels with conventional voltage levels of between 3 V and 15 V at another voltage level, using a potential differential of a few volts up to several hundred volts (depending on the technology and application used). The potential differential between the input voltage level, or voltage transmitter and the output voltage level, or voltage receiver can be either positive or negative, or can vary in intensity.