Abstract:
The present invention concerns an X-ray tube (100) comprising a vacuum-sealed tube housing (10) evacuated to a pressure of 10-7 mbar or lower, a cathode assembly (40) inside the housing comprising an electron emitter (50) adapted to emit electrons when heated at a temperature comprised in a defined working temperature range and at least one component (42, 44, 48) containing carbon in an amount of at least 20% by weight, especially at least 30% by weight, even more especially at least 50% by weight, the at least one component being preferably designed for holding the emitter, and an anode assembly (30) inside the housing comprising a target layer (34) for receiving electrons emitted by the electron emitter (50), wherein the electron emitter preferably comprises boride, preferably lanthanum hexaboride (LaB6), and wherein the cathode assembly is designed such that if the emitter temperature is comprised in the working temperature range.
Abstract:
A high energy photon source. A pair of plasma pinch electrodes are located in a vacuum chamber (10). The chamber (10) contains a working gas which includes a noble buffer gas and an active gas chosen to provide a desired spectral line. A pulse power source provides electrical pulses at repetition rates of 1000 Hz or greater and at voltages high enough to create electrical discharge between the electrodes to produce very high temperature, high density plasma pinches in the working gas providing radiation at the spectral line of the source or active gas. A fourth generation unit is described which produces 20 mJ, 13.5 nm pulses into 2 pi steradians at repetition rates of 2000 Hz with xenon as the active gas. This unit includes a pulse power system having a resonant charger charging a charging capacitor bank, and a magnetic compression circuit comprising a pulse transformer for generating the high voltage electrical pulses at 2000 Hz or greater. Gas flows in the vacuum chamber are controlled to assure desired concentration of active gas in the discharge region and to minimize active gas concentration in the beam path downstream of the pinch region. In a preferred embodiment, active gas is injected downstream of the pinch region through a nozzle (2) and exhausted axially through an exhaust port (3) in the center of the anode. In another preferred embodiment a laserbeam generates metal vapor at a location close to but downstream of the pinch region and the vapor is exhausted axially through the anode.
Abstract:
A cathode structure comprising a getter material provided with a diamond film. The getter material may include zirconium, vanadium and iron. Cathode structures may have a substantially rounded configuration including a substantially straight portion. Other cathode structures may have a substantially flat portion, with the diamond film covering essentially the entire flat surface. Methods of manufacturing cathode structures may include conditioning the cathode structure by applying a voltage.
Abstract:
금속 전극과 절연 스페이서 사이의 접합부에서 맞대기 접합보다 상대적으로 접합력이 우수한 겹치기 접합이 이루어지고, 진공 브레이징 전에 구성 부품들을 정렬할 때 별도의 지그 없이도 구성 부품들을 정확히 정렬시킬 수 있도록 구성된 전계 방출 엑스선 소스 장치가 개시된다. 본 발명에 따른 전계 방출 엑스선 소스 장치는, 전기 절연성을 띤 튜브형 구조물로서, 그 말단에 근접한 외측면에 길이 방향으로 소정의 폭만큼 메탈라이징 된 접합 외측면을 갖는 절연 스페이서; 및, 상기 절연 스페이서의 말단에 인접하게 배치된 금속 구조물로서, 상기 접합 외측면의 적어도 일부분과 중첩되게 브레이징 접합된 접합 밴드부를 갖는 금속 전극;을 포함한다.
Abstract:
It is described an X-ray tube (100) comprising an ion manipulation arrangement (140) having at least one ion collector electrode (141). The ion collector electrode (141) is made at least partially from a getter material. The ion manipulation arrangement (140) is in particular beneficial for high-end X-ray-tubes including an electrical field-free region (131). The ion manipulation arrangement (140) produces an electrical field, which deflects ions (150). When impinging onto the getter electrode (141) the ions (150) are permanently collected and thus removed from the interior of an evacuated envelope of the X-ray tube (100). This avoids ion bombardment on an electron emitter (111) of the X-ray tube (100). Additionally the arcing rate caused by residual gas can be reduced significantly. A heating of the getter material may be realized with heating wires or by a defined bombardment of scattered electrons (322) onto the electrodes (341, 342) comprising the getter material.
Abstract:
Systems and methods are disclosed for reducing the influence of plasma generated debris on internal components of an EUV light source. In one aspect, an EUV metrology monitor is provided which may have a heater to heat an internal multi-layer filtering mirror to a temperature sufficient to remove deposited debris from the mirror. In another aspect, a device is disclosed for removing plasma generated debris from an EUV light source collector mirror having a different debris deposition rate at different zones on the collector mirror. In a particular aspect, an EUV collector mirror system may comprise a source of hydrogen to combine with Li debris to create LiH on a collector surface; and a sputtering system to sputter LiH from the collector surface. In another aspect, an apparatus for etching debris from a surface of a EUV light source collector mirror with a controlled plasma etch rate is disclosed.
Abstract:
An EUV light source plasma source material handling system and method is disclosed which may comprise a droplet generator having droplet generator plasma source material reservoir (212) in fluid communication with a droplet formation capillary and maintained within a selected range of temperatures sufficient to keep the plasma source material in a liquid form; a plasma source material supply system having a supply reservoir (214) in fluid communication with the droplet generator plasma source material reservoir and holding at least a replenishing amount of plasma source material in liquid form for transfer to the droplet generator plasma source material reservoir, while the droplet generator is on line; a transfer mechanism (210) transferring liquid plasma source material from the supply reservoir to the droplet generator plasma source material reservoir, while the droplet generator is on line. The supply reservoir may comprise a solid form of the plasma source material used to periodically form from a portion of the material in solid form the material in liquid form.
Abstract:
A high energy photon source. A pair of plasma pinch electrodes forming a plasma pinch source (46) are located in a vacuum chamber. The chamber contains a working gas which includes a noble buffer gas and an active gas chosen to provide a desired spectral line. A pulse power source provides electrical pulses at repetition rates of 1000 Hz or greater and at voltages high enough to create electrical discharges between the electrodes to produce very high temperature, high density plasma pinches in the working gas providing radiation at the spectral line of the source or active gas. A fourth generation unit is described which produces 20 mJ, 13.5 nm pulses into 2 pi steradians at repetition rates of 2000 Hz with xenon as the active gas. This unit includes a pulse power system (404) having a resonant charger charging a charging capacitor bank, and a magnetic compression circuit comprising a pulse transformer (406) for generating the high voltage electrical pulses at repetition rates of 2000 Hz or greater.
Abstract:
A capillary discharge extreme ultraviolet lamp source apparatus and method for extreme ultraviolet microlithography. The capillary source includes a lamp body (306); a bore having electrodes (300), insulators (302) and a discharge plasma region (304).
Abstract:
본 발명은 진공 유지를 위해 비확산 게터를 이용한 엑스선관에 관한 것으로서, 비확산 게터를 엑스선관 내부에 장착하여 엑스선관 작동시 정격전력을 즉시 인가하여도 필라멘트 및 음극 집속관에서 발생되는 가스와 타겟에서 발생되는 가스가 상존하는 잔류가스에 부가 되더라도 고압전원이 인가되는 순간부터 시작해서 인가되고 있는 동안 가스흡착이 충분히 발휘되어 안정적으로 성능 및 기능이 유지되는 비확산 게터가 장착된 고정양극 엑스선관 및 회전양극 엑스선관의 구조를 제공한다.