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1.发明公开AQUEOUS POLISHING COMPOSITION AND PROCESS FOR CHEMICALLY MECHANICALLY POLISHING SUBSTRATES CONTAINING SILICON OXIDE DIELECTRIC AND POLYSILICON FILMS 审中-公开含水抛光组合物和方法有电介质氧化硅和多晶硅膜的化学机械抛光SUBSTRATES
公开(公告)号：EP2649144A4
公开(公告)日：2014-05-14
申请号：EP11846454
申请日：2011-12-07
Applicant: BASF SE
IPC: C09G1/02 , C09K3/14 , H01L21/321
CPC classification number: H01L21/30625 , C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/31053
Abstract: An aqueous polishing composition comprising (A) abrasive ceria particles and (B) amphiphilic nonionic surfactants selected water-soluble and water-dispersible, linear and branched polyoxyalkylene blockcopolymers of the general formula I: R[(B1)m/(B2)nY]p (I), wherein the indices and the variables have the following meaning: m, n, and p integers≧1; R hydrogen atom or monovalent or polyvalent organic residue, except C5-C20 alkyl groups; (B1) block of oxyethylene monomer units; (B2) block of substituted oxyalkylene monomer units wherein the substituents are selected from two methyl groups, alkyl groups of more than two carbon atoms and cycloalkyl, aryl, alkyl-cycloalkyl, alkyl-aryl, cycloalkyl-aryl and alkyl-cycloalkyl-aryl groups; and Y hydrogen atom or monovalent organic residue, except C5-C20 alkyl groups; with the proviso that when (B) contains more than one block (B1) or (B2) two blocks of the same type are separated by a block of the other type.
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2.发明公开A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING (CMP) OF III-V MATERIAL IN THE PRESENCE OF A CMP COMPOSITION COMPRISING A SPECIFIC NON-IONIC SURFACTANT 审中-公开PROCESS用于产生具有化学机械抛光（CMP）的III-V材料的存在CMP组合物的半导体元件与特定的，非离子表面活性
公开(公告)号：EP2852644A4
公开(公告)日：2016-04-06
申请号：EP13794728
申请日：2013-05-21
Applicant: BASF SE
Inventor： NOLLER BASTIAN MARTEN , GILLOT CHRISTOPHE , FRANZ DIANA , LI YUZHUO
IPC: H01L21/306 , C09G1/02
CPC classification number: C09G1/02 , B81C2201/0121 , B81C2201/0123 , B81C2201/0126 , H01L21/02024 , H01L21/302 , H01L21/304 , H01L21/30625 , H01L21/3212 , H01L21/461
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公开(公告)号：EP2847785A4
公开(公告)日：2016-03-16
申请号：EP13788644
申请日：2013-04-29
Applicant: BASF SE
Inventor： FRANZ DIANA , NOLLER BASTIAN MARTEN
IPC: H01L21/306 , C09G1/02 , C09K3/14
CPC classification number: C09G1/02 , C09K3/1463 , H01L21/02024 , H01L21/30625
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4.发明公开A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR Si1-XGeX MATERIAL IN THE PRESENCE OF A CMP COMPOSITION HAVING A pH VALUE OF 3.0 TO 5.5 审中-公开用于生产半导体部件WITH化学 - 机械抛光，基础锗和/或SI1-xGex材料在CMP组合物与3.0至5.5的pH THE PRESENCE
公开(公告)号：EP2741892A4
公开(公告)日：2015-03-18
申请号：EP12819369
申请日：2012-07-30
Applicant: BASF SE
Inventor： NOLLER BASTIAN MARTEN , DRESCHER BETTINA , GILLOT CHRISTOPHE , LI YUZHOU
IPC: H01L21/306 , B24B37/04 , C09G1/02 , C09K3/14
CPC classification number: H01L21/30625 , B24B37/044 , C09G1/02 , C09K3/1463 , H01L21/02024
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Patent Agency Ranking5.发明公开
公开(公告)号：EP3180406A4
公开(公告)日：2018-04-11
申请号：EP15831838
申请日：2015-07-24
Applicant: BASF SE
Inventor： LAN YONGQING , NOLLER BASTIAN MARTEN , JIANG LIANG , SHEN DANIEL KWO HUNG , GOLZARIAN REZA
IPC: H01L21/321 , C09G1/02 , C09K3/14
CPC classification number: C09K3/14 , C09G1/02 , C09K3/1436 , C09K3/1463 , H01L21/3212
Abstract: Described are a chemical-mechanical polishing (CMP) composition comprising abrasive particles in the form of organic/inorganic composite particles as well as the use of said composite particles as abrasive particles in a CMP composition and processes for the manufacture of a semiconductor device comprising chemical mechanical polishing of a substrate in the presence said CMP composition.
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6.发明公开A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING A POLY(AMINOACID) 审中-公开CHEMISCH-MECHANISCHE POLIERZUSAMMENSETZUNG MIT EINER POLY（AMINOSÄURE）
公开(公告)号：EP3099756A4
公开(公告)日：2017-08-02
申请号：EP15743237
申请日：2015-01-21
Applicant: BASF SE
Inventor： LAUTER MICHAEL , LANGE ROLAND , NOLLER BASTIAN MARTEN , SIEBERT MAX
IPC: C09G1/18 , C09G1/02 , C09K3/14 , H01L21/304 , H01L21/3105 , H01L21/321
CPC classification number: C09G1/02 , C09G1/18 , C09K3/1409 , C09K3/1463 , H01L21/31053 , H01L21/31055 , H01L21/3212 , H01L21/76224
Abstract: A chemical mechanical polishing (CMP) composition comprising (A) Colloidal or fumed inorganic particles or a mixture thereof, (B) a poly (amino acid) and or a salt thereof, and (M) an aqueous medium.
Abstract translation: 一种化学机械抛光（CMP）组合物，其包含（A）胶态或气相无机颗粒或其混合物，（B）聚氨基酸和/或其盐和（M）水性介质。
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7.发明公开CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING A PROTEIN 有权CHEMISCH-MECHANISCHE POLIERZUSAMMENSETZUNG MIT EINEM蛋白
公开(公告)号：EP2812911A4
公开(公告)日：2015-08-12
申请号：EP13746024
申请日：2013-01-25
Applicant: BASF SE , BASF SCHWEIZ AG
Inventor： LI YUZHUO , NOLLER BASTIAN MARTEN , LAUTER MICHAEL , LANGE ROLAND
IPC: H01L21/304 , C09G1/00 , H01L21/302 , H01L21/461 , H01L21/463
CPC classification number: C09G1/02 , C09G1/18 , C09K3/1463 , H01L21/30625 , H01L21/31053
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8.发明公开
公开(公告)号：EP2742103A4
公开(公告)日：2015-03-25
申请号：EP12819882
申请日：2012-07-30
Applicant: BASF SE
Inventor： NOLLER BASTIAN MARTEN , DRESCHER BETTINA , GILLOT CHRISTOPHE , LI YUZHUO , GAO NING
IPC: H01L21/306 , C09G1/02 , C09K3/14
CPC classification number: H01L21/30625 , C09G1/02 , C09K3/1463 , C23F3/00 , H01L21/02024 , H01L21/31053 , H01L21/3212
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公开(公告)号：EP2625237A4
公开(公告)日：2014-03-19
申请号：EP11830273
申请日：2011-10-04
Applicant: BASF SE
Inventor： DRESCHER BETTINA , NOLLER BASTIAN MARTEN , SCHMITT CHRISTINE , SUGIHARTO ALBERT BUDIMAN , LI YUZHUO
IPC: C09G1/02 , C09K3/14 , H01L21/306 , H01L21/321
CPC classification number: C09K13/04 , C09G1/02 , C09K3/1409 , C09K3/1463 , C09K13/06 , H01L21/30625 , H01L21/3212
Abstract: A chemical mechanical polishing (CMP) composition Abstract Use of a chemical mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a mixture thereof, (B) a heteropolyacid or a salt thereof, (C) a salt comprising chloride, fluoride, bromide, or a mixture thereof as anion, and (D) an aqueous medium, for polishing a substrate comprising a self-passivating metal, germanium, nickel phosphorous (NiP), or a mixture thereof.
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