摘要:
An optical member utilizing diffraction, which comprises a substrate having a fine structure comprising microstructures with an interval of 50-1,000 nm between the adjacent microstructures on a substrate surface, wherein the substrate has a surface layer portion comprising a region containing fluorine atoms in an amount larger than that in the inner layer portion thereof. The microstructures are preferably micro-protrusions each tapering toward the tip in the direction perpendicular to the substrate surface. The optical member is manufactured by a method comprising a step of exposing the surface of the substrate having a fine structure comprising microstructures with an interval of 50-1, 000 nm between the adjacent microstructures to an atmosphere containing a fluorine gas.
摘要:
A fluid supply apparatus with a plurality of flow lines branching out from one regulator for adjustment of pressure, the flow lines being arranged in parallel, wherein a measure is taken that the operation, that is, opening or closing of one flow passage will have no transient effect on the steady flow of the other flow passages, For this purpose, each flow passage is provided with a time delay-type mass flow controller MFC so that when one closed fluid passage is opened, the mass flow controller on that flow passage reaches a set flow rate Qs in a specific delay time Δt from the starting point. Also provided are a method and an apparatus for the above in which a plurality of gas types can be controlled in flow rate with high precision by one pressure-type flow control system. To that end, a formula for calculating the flow rate of a gas is theoretically derived that flows with a pressure ratio not higher than the critical pressure ratio. From that formula, the flow factor is defined, so that the formula may be applied to a number of gas types using flow factors
摘要:
A plasma film-forming method which comprises providing a purifying chamber (2) packed with a substance having a surface layer exhibiting a hydrophilic property or reducing action between a source (1) for supplying a C
摘要:
A vacuum heat insulation valve that can be used in high-temperature conditions in a gas supply system and gas discharge system and that can be drastically reduced in size and made compact because of excellent heat insulating performance of the valve. A vacuum heat insulation valve constructed from a valve that has a valve body and an actuator and from a vacuum insulation box that receives the valve. The vacuum heat insulation box (S) is constructed from a rectangular lower vacuum jacket (S5) that has on its side face a tubular vacuum insulation piping receiving section (J) and whose upper face is opened, and from a rectangular upper vacuum jacket (S4) that is air-tightly fitted to the lower vacuum jacket (S5) from the above and whose lower face is opened.
摘要:
Flow rate control accuracy is prevented from being reduced in a low flow rate region to enable highly accurate flow rate control over the entire flow rate control region. By this, a chamber inner pressure is highly accurately controlled over a wide range by regulating the flow rate of a gas fed to a chamber. A gas feeding device for feeding a gas to a chamber, where the device is constituted of parallelly connected pressure-type flow rate control devices and a control device for controlling the flow rate control devices and feeds a desired gas, while controlling the flow rate, to a chamber deaerated by a vacuum pump. The gas feeding device is constructed such that one of the pressure-type flow control devices controls a gas flow rate range of up to 10% maximum of the maximum flow rate fed to the chamber and the remaining flow control devices control the remaining range. Further, a pressure detector is installed on a chamber and a detected value from the detector is inputted in the control device. Control signals to the pressure-type flow rate control devices are regulated to control the amount of the gas fed to the chamber, controlling a chamber inner pressure.
摘要:
A semiconductor manufacturing apparatus which can process the surface of a wafer uniformly and requires a small installation floor area and has an excellent maintainability. The apparatus comprises a vacuum enclosure including at least one wafer mounting stage on its bottom plate, and a cylinder surrounding the wafer mounting stage, and at least one cylinder lifting mechanism disposed for each cylinder for moving the cylinder vertically to vary the clearance between the cylinder and the top plate or bottom plate of the vacuum enclosure and for separating the space outside the cylinder constituting a transfer chamber for transferring the wafer from the space inside the cylinder constituting a process chamber for processing the surface of the wafer, wherein the transfer chamber includes a wafer transfer mechanism for transferring the wafer between the process chamber and the transfer chamber through the clearance, the process chamber has a process chamber gas feed port and a process chamber gas exhaust port, and said transfer chamber has a transfer chamber gas feed port and a transfer chamber gas exhaust port.
摘要:
A microwave plasma process device (10) is provided with a plasma ignition enhancing means for enhancing plasma ignition by microwaves. The plasma ignition enhancing means comprises a deuterium lamp (30) which generates vacuum ultraviolet rays, and a penetration window (32) guiding the vacuum ultraviolet rays, which have penetrated the same, to a plasma excitation space (26). The penetration window (32) is constructed as a convex lens, focusing the vacuum ultraviolet rays to enhance the ionization of the plasma excitation gas. Such arrangement makes it possible to effect plasma ignition easily and rapidly.
摘要:
A differential pressure type flow meter in which production cost is lowered by simplifying the structure and high-accuracy measurement of flow rate can be carried out in real time under inline state with an error E not higher than (1%SP) over a wide flow rate range of 100%-1%. The differential pressure type flow meter comprises an orifice, a detector of pressure P1 on the upstream side of the orifice, a detector of pressure P2 on the downstream side of the orifice, a detector of fluid temperature T on the upstream side of the orifice, and a control operation circuit for operating the flow rate Q of fluid passing through the orifice using detected pressures P1 and P2 and detected temperature T from respective detectors, wherein the flow rate Q of fluid is operated according to the following expression; Q=C1.P1/√T.((P2/P1) -(P2/P1) ) (where, C1 is a proportional constant, m and n are constants).
摘要:
A micro wave plasma processing device, wherein a tapered surface for relieving a variation in impedance and a member having an intermediate dielectric constant are installed between a micro wave feeding wave guide and a micro wave antenna, whereby the formation of reflected wave at the connection part between the micro wave feeding wave guide and the micro wave antenna can be suppressed to increase a power feeding efficiency and suppress discharge so as to stabilize the formation of plasma in the plasma processing device.
摘要:
A valve in accordance with the reduction in diameter of piping in a vacuum discharge system, the reduction realizing downsizing of apparatuses for a vacuum discharge system and resultant reduced costs and shortened time for vacuum discharge. In the valve, inside corrosion, clogging, seat leakage, etc. by accumulation of dissociated products produced by decomposition of gas can be prevented from occurring. Specifically, passive aluminum is used for piping components, such as the valve, adapted for a vacuum discharge system so as to control decomposition of gas caused by rise in temperature during baking, so that components suitable for the reduction in diameter sizes in the vacuum discharge system are provided. Corrosion, clogging, seat leakage, etc. caused by decomposition of gas are prevented from occurring.